JP2003198057A - 半導体レーザ素子及びその製造方法 - Google Patents

半導体レーザ素子及びその製造方法

Info

Publication number
JP2003198057A
JP2003198057A JP2001396900A JP2001396900A JP2003198057A JP 2003198057 A JP2003198057 A JP 2003198057A JP 2001396900 A JP2001396900 A JP 2001396900A JP 2001396900 A JP2001396900 A JP 2001396900A JP 2003198057 A JP2003198057 A JP 2003198057A
Authority
JP
Japan
Prior art keywords
waveguide
ridge
face
semiconductor laser
laser device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001396900A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003198057A5 (enExample
Inventor
Jugo Otomo
重吾 御友
Hironobu Narui
啓修 成井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2001396900A priority Critical patent/JP2003198057A/ja
Publication of JP2003198057A publication Critical patent/JP2003198057A/ja
Publication of JP2003198057A5 publication Critical patent/JP2003198057A5/ja
Pending legal-status Critical Current

Links

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  • Semiconductor Lasers (AREA)
JP2001396900A 2001-12-27 2001-12-27 半導体レーザ素子及びその製造方法 Pending JP2003198057A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001396900A JP2003198057A (ja) 2001-12-27 2001-12-27 半導体レーザ素子及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001396900A JP2003198057A (ja) 2001-12-27 2001-12-27 半導体レーザ素子及びその製造方法

Publications (2)

Publication Number Publication Date
JP2003198057A true JP2003198057A (ja) 2003-07-11
JP2003198057A5 JP2003198057A5 (enExample) 2005-08-04

Family

ID=27602846

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001396900A Pending JP2003198057A (ja) 2001-12-27 2001-12-27 半導体レーザ素子及びその製造方法

Country Status (1)

Country Link
JP (1) JP2003198057A (enExample)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009057254A1 (ja) * 2007-11-02 2009-05-07 Panasonic Corporation 半導体レーザ装置
WO2009141933A1 (ja) * 2008-05-19 2009-11-26 パナソニック株式会社 窒化物半導体レーザ
JP2009302138A (ja) * 2008-06-10 2009-12-24 Opnext Japan Inc 半導体レーザ素子、及び半導体レーザ素子の製造方法
JP2010034305A (ja) * 2008-07-29 2010-02-12 Panasonic Corp 半導体レーザ装置
JP2010062213A (ja) * 2008-09-01 2010-03-18 Sharp Corp 窒化物半導体発光素子およびその製造方法
JP2010087083A (ja) * 2008-09-30 2010-04-15 Sony Corp 半導体レーザの製造方法、半導体レーザ、光ピックアップおよび光ディスク装置
US7733935B2 (en) 2007-10-23 2010-06-08 Sharp Kabushiki Kaisha Nitride semiconductor laser device and method of producing the same
JP2010141012A (ja) * 2008-12-10 2010-06-24 Panasonic Corp 半導体レーザ装置及びその製造方法
US8202750B2 (en) 2007-02-28 2012-06-19 Sony Corporation Method of manufacturing semiconductor device, semiconductor laser, optical pickup, and optical disk device with nitride type group III-V compound semiconductor layer
US8270450B2 (en) 2009-12-08 2012-09-18 Sony Corporation Method of manufacturing semiconductor laser, semiconductor laser, optical disc device, method of manufacturing semiconductor device, and semiconductor device
US8530255B2 (en) 2007-02-28 2013-09-10 Sony Corporation Method of manufacturing semiconductor laser, semiconductor laser, optical pickup, optical disk device, method of manufacturing semiconductor device, semiconductor device, and method of growing nitride type group III-V compound semiconductor layer
US20230155346A1 (en) * 2020-08-04 2023-05-18 Panasonic Holdings Corporation Semiconductor light emitting device

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8822975B2 (en) 2007-02-28 2014-09-02 Sony Corporation Method of manufacturing semiconductor laser, semiconductor laser, optical pickup, optical disk device, method of manufacturing semiconductor device, semiconductor device, and method of growing nitride type Group III-V compound semiconductor layer
US8202750B2 (en) 2007-02-28 2012-06-19 Sony Corporation Method of manufacturing semiconductor device, semiconductor laser, optical pickup, and optical disk device with nitride type group III-V compound semiconductor layer
US8530255B2 (en) 2007-02-28 2013-09-10 Sony Corporation Method of manufacturing semiconductor laser, semiconductor laser, optical pickup, optical disk device, method of manufacturing semiconductor device, semiconductor device, and method of growing nitride type group III-V compound semiconductor layer
US7733935B2 (en) 2007-10-23 2010-06-08 Sharp Kabushiki Kaisha Nitride semiconductor laser device and method of producing the same
WO2009057254A1 (ja) * 2007-11-02 2009-05-07 Panasonic Corporation 半導体レーザ装置
WO2009141933A1 (ja) * 2008-05-19 2009-11-26 パナソニック株式会社 窒化物半導体レーザ
JP2009283512A (ja) * 2008-05-19 2009-12-03 Panasonic Corp 窒化物半導体レーザ
JP2009302138A (ja) * 2008-06-10 2009-12-24 Opnext Japan Inc 半導体レーザ素子、及び半導体レーザ素子の製造方法
US8000365B2 (en) 2008-07-29 2011-08-16 Panasonic Corporation Semiconductor laser device
JP2010034305A (ja) * 2008-07-29 2010-02-12 Panasonic Corp 半導体レーザ装置
JP2010062213A (ja) * 2008-09-01 2010-03-18 Sharp Corp 窒化物半導体発光素子およびその製造方法
JP2010087083A (ja) * 2008-09-30 2010-04-15 Sony Corp 半導体レーザの製造方法、半導体レーザ、光ピックアップおよび光ディスク装置
US8896002B2 (en) 2008-09-30 2014-11-25 Sony Corporation Method for producing semiconductor laser, semiconductor laser, optical pickup, and optical disk drive
JP2010141012A (ja) * 2008-12-10 2010-06-24 Panasonic Corp 半導体レーザ装置及びその製造方法
US8422526B2 (en) 2008-12-10 2013-04-16 Panasonic Corporation Semiconductor laser device and method for manufacturing the same
US8270450B2 (en) 2009-12-08 2012-09-18 Sony Corporation Method of manufacturing semiconductor laser, semiconductor laser, optical disc device, method of manufacturing semiconductor device, and semiconductor device
US20230155346A1 (en) * 2020-08-04 2023-05-18 Panasonic Holdings Corporation Semiconductor light emitting device

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