JP2010015550A - 半導体装置及びその作製方法 - Google Patents
半導体装置及びその作製方法 Download PDFInfo
- Publication number
- JP2010015550A JP2010015550A JP2009127681A JP2009127681A JP2010015550A JP 2010015550 A JP2010015550 A JP 2010015550A JP 2009127681 A JP2009127681 A JP 2009127681A JP 2009127681 A JP2009127681 A JP 2009127681A JP 2010015550 A JP2010015550 A JP 2010015550A
- Authority
- JP
- Japan
- Prior art keywords
- organic resin
- resin layer
- layer
- conductor
- paste
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 55
- 239000004065 semiconductor Substances 0.000 title claims description 162
- 238000000034 method Methods 0.000 title claims description 49
- 229920005989 resin Polymers 0.000 claims abstract description 337
- 239000011347 resin Substances 0.000 claims abstract description 337
- 239000004020 conductor Substances 0.000 claims abstract description 122
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 84
- 239000000758 substrate Substances 0.000 claims description 55
- 230000001681 protective effect Effects 0.000 claims description 26
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 17
- 229910052709 silver Inorganic materials 0.000 claims description 16
- 239000004332 silver Substances 0.000 claims description 16
- 239000003822 epoxy resin Substances 0.000 claims description 13
- 229920000647 polyepoxide Polymers 0.000 claims description 13
- 230000015556 catabolic process Effects 0.000 abstract description 14
- 230000006355 external stress Effects 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 311
- 239000010410 layer Substances 0.000 description 309
- 239000000463 material Substances 0.000 description 29
- 239000000835 fiber Substances 0.000 description 27
- 238000000926 separation method Methods 0.000 description 26
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 23
- 229910052710 silicon Inorganic materials 0.000 description 23
- 239000010703 silicon Substances 0.000 description 23
- 229910052581 Si3N4 Inorganic materials 0.000 description 19
- 230000005611 electricity Effects 0.000 description 19
- 230000006870 function Effects 0.000 description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 19
- 230000003068 static effect Effects 0.000 description 19
- 239000012535 impurity Substances 0.000 description 18
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 239000010936 titanium Substances 0.000 description 17
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 12
- 239000010409 thin film Substances 0.000 description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 11
- 238000004891 communication Methods 0.000 description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 11
- 239000000047 product Substances 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 11
- 229910052719 titanium Inorganic materials 0.000 description 11
- 239000010949 copper Substances 0.000 description 10
- 229910052750 molybdenum Inorganic materials 0.000 description 10
- 239000011733 molybdenum Substances 0.000 description 10
- 239000002356 single layer Substances 0.000 description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 9
- 230000004807 localization Effects 0.000 description 9
- 229910052759 nickel Inorganic materials 0.000 description 9
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 9
- 229920001187 thermosetting polymer Polymers 0.000 description 9
- 229910052721 tungsten Inorganic materials 0.000 description 9
- 239000010937 tungsten Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 238000002425 crystallisation Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- -1 silver halide Chemical class 0.000 description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 238000009832 plasma treatment Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 229910052715 tantalum Inorganic materials 0.000 description 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 230000008025 crystallization Effects 0.000 description 6
- 230000006378 damage Effects 0.000 description 6
- 239000010955 niobium Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 5
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 5
- 239000004697 Polyetherimide Substances 0.000 description 5
- 239000004721 Polyphenylene oxide Substances 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 5
- 229910010272 inorganic material Inorganic materials 0.000 description 5
- 229910052763 palladium Inorganic materials 0.000 description 5
- 229920003192 poly(bis maleimide) Polymers 0.000 description 5
- 229920001601 polyetherimide Polymers 0.000 description 5
- 239000009719 polyimide resin Substances 0.000 description 5
- 229920006380 polyphenylene oxide Polymers 0.000 description 5
- 239000010948 rhodium Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229920005992 thermoplastic resin Polymers 0.000 description 5
- 229920006337 unsaturated polyester resin Polymers 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 239000011231 conductive filler Substances 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 235000013305 food Nutrition 0.000 description 4
- 239000003365 glass fiber Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 230000036541 health Effects 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 125000004433 nitrogen atom Chemical group N* 0.000 description 4
- 125000004430 oxygen atom Chemical group O* 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000001678 elastic recoil detection analysis Methods 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 239000002923 metal particle Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229910052703 rhodium Inorganic materials 0.000 description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 3
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- 239000002759 woven fabric Substances 0.000 description 3
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000003698 laser cutting Methods 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000004745 nonwoven fabric Substances 0.000 description 2
- 229910052762 osmium Inorganic materials 0.000 description 2
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- OUINRTZUFNPIBX-UHFFFAOYSA-N 2-butoxyethyl ethaneperoxoate Chemical compound CCCCOCCOOC(C)=O OUINRTZUFNPIBX-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 241001465754 Metazoa Species 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- FIKZYNUYDIQYGA-UHFFFAOYSA-N [O-2].[Zn+2].[In+3].[W+2]=O Chemical compound [O-2].[Zn+2].[In+3].[W+2]=O FIKZYNUYDIQYGA-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003905 agrochemical Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- 229920006231 aramid fiber Polymers 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 235000013361 beverage Nutrition 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000036760 body temperature Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 238000005338 heat storage Methods 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-M hexanoate Chemical compound CCCCCC([O-])=O FUZZWVXGSFPDMH-UHFFFAOYSA-M 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 244000144972 livestock Species 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 150000002751 molybdenum Chemical class 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49855—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers for flat-cards, e.g. credit cards
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6661—High-frequency adaptations for passive devices
- H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
【解決手段】表面に第1の導電膜が形成された第1の有機樹脂層と表面に第2の導電膜が形成された第2の有機樹脂層の間に素子形成層を設け、当該第1の導電膜と第2の導電膜を有機樹脂層内に形成されたコンタクト用の導電体を用いて電気的に接続させる工程において、当該第1の有機樹脂層及び第2の有機樹脂層内に設けるコンタクト用の導電体を、有機樹脂を硬化させる前にペーストを浸透させ、その後有機樹脂層を硬化させることにより作製する。
【選択図】図1
Description
本実施の形態では、半導体装置の作製方法及び当該作製方法により形成された半導体装置の一例に関し図面を参照して説明する。
本実施の形態では、上記実施の形態1で示した構成において、第1の有機樹脂層と第2の有機樹脂層に代えて、繊維体に有機樹脂が含浸された構造体を用いる場合に関し図面を参照して説明する。
本実施の形態では、上記実施の形態と異なる半導体装置の作製方法及び当該作製方法により得られる半導体装置の一例に関し図面を参照して説明する。具体的には、第1の有機樹脂層と第2の有機樹脂層上に形成する第1の導電膜と第2の導電膜を導電性ペーストで形成する場合について示す。
本実施の形態では、同一基板上に半導体集積回路及びアンテナを有する素子形成層を複数設け、一枚の基板から複数(ここでは、縦4×横3)の半導体装置(半導体集積回路チップ)を作製する方法に関して図面を参照して説明する。以下の説明において、図8、図9は上面図の模式図であり、図10〜図15は図8、図9におけるA−B間の断面図の模式図である。
本実施の形態では、上記実施の形態を用いて形成された非接触でデータの入出力が可能である半導体装置の適用例に関して図面を参照して以下に説明する。非接触でデータの入出力が可能である半導体装置は利用の形態によっては、RFIDタグ、IDタグ、ICタグ、ICチップ、RFタグ、無線タグ、電子タグまたは無線チップともよばれる。
上記実施の形態で示した半導体装置は、プロセッサ回路を有するチップ(以下、プロセッサチップ、無線チップ、無線プロセッサ、無線メモリ、無線タグともよぶ)として利用することができる。上記実施の形態で示した半導体装置の用途は広範にわたり、非接触で対象物の履歴等の情報を明確にし、生産・管理等に役立てる商品であればどのようなものにも適用することができる。例えば、紙幣、硬貨、有価証券類、証書類、無記名債券類、包装用容器類、書籍類、記録媒体、身の回り品、乗物類、食品類、衣類、保健用品類、生活用品類、薬品類及び電子機器等に設けて使用することができる。これらの例に関して図20を用いて説明する。
102 剥離層
103 素子形成層
104 有機樹脂層
105 ペースト
106 導電体
107 導電膜
108 有機樹脂層
109 ペースト
110 導電体
111 導電膜
115 剥離面
118 領域
119 領域
121 保護膜
122 保護膜
123 開口部
160 繊維体
161 有機樹脂
190 チップ
191 チップ
193 チップ
194 チップ
195 チップ
196 チップ
197 チップ
204 構造体
701 基板
702 剥離層
703 絶縁膜
704 半導体膜
705 ゲート絶縁膜
707 ゲート電極
708 絶縁膜
709 絶縁膜
710 絶縁膜
711 絶縁膜
713 導電膜
714 絶縁膜
715 開口部
721 構造体
722 導電体
723 導電膜
725 構造体
726 導電体
727 導電膜
731 導電膜
750 領域
751 素子形成層
800 半導体装置
810 高周波回路
820 電源回路
830 リセット回路
840 クロック発生回路
850 データ復調回路
860 データ変調回路
870 制御回路
880 記憶回路
890 アンテナ
910 コード抽出回路
920 コード判定回路
930 CRC判定回路
940 出力ユニット回路
3200 通信装置
3210 表示部
3220 品物
3230 半導体装置
3240 通信装置
3250 半導体装置
3260 商品
704a 半導体膜
706a チャネル形成領域
706b 不純物領域
706c 不純物領域
712a 開口部
721a 繊維体
721b 有機樹脂
725a 繊維体
725b 有機樹脂
730a 薄膜トランジスタ
730b 薄膜トランジスタ
730d 薄膜トランジスタ
Claims (7)
- 基板上に剥離層を形成し、
前記剥離層上に半導体集積回路及びアンテナを有する素子形成層を形成し、
前記素子形成層を覆うように第1の有機樹脂層を形成し、
前記第1の有機樹脂層を硬化させる前に、導電体を有する第1のペーストを、前記第1の有機樹脂層の第1の面上であって少なくとも前記素子形成層と重ならない領域に形成し、
前記第1のペーストを前記第1の有機樹脂層内に浸透させた後に前記第1の有機樹脂層を硬化させることにより、前記第1の有機樹脂層の第1の面から該第1の面と反対側の第2の面に達する第1の導電体を形成し、
前記第1の導電体と電気的に接続し且つ前記素子形成層と重なるように前記第1の有機樹脂層上に第1の導電膜を形成し、
前記基板から素子形成層を剥離し、剥離面において前記第1の有機樹脂層に形成された第1の導電体を露出させ、
前記剥離面に第2の有機樹脂層を形成し、
前記第2の有機樹脂層を硬化させる前に、導電体を有する第2のペーストを、前記第2の有機樹脂層の第1の面上であって少なくとも前記剥離面において露出した前記第1の導電体と重なる領域に形成し、
前記第2のペーストを前記第2の有機樹脂層内に浸透させた後に前記第2の有機樹脂層を硬化させることにより、前記第2の有機樹脂層の第1の面から該第1の面と反対側の第2の面に達し、且つ前記第1の導電体と電気的に接続する第2の導電体を形成し、
前記第2の導電体と電気的に接続し且つ前記素子形成層と重なるように前記第2の有機樹脂層上に第2の導電膜を形成することを特徴とする半導体装置の作製方法。 - 基板上に剥離層を形成し、
前記剥離層上に第1の保護膜を形成し、
前記第1の保護膜上に半導体集積回路及びアンテナを有する素子形成層を形成し、
前記素子形成層上に第2の保護膜を形成し、
前記第2の保護膜を覆うように第1の有機樹脂層を形成し、
前記第1の有機樹脂層を硬化させる前に、導電体を有する第1のペーストを、前記第1の有機樹脂層の第1の面上に形成し、
前記第1のペーストを前記第1の有機樹脂層内に浸透させた後に前記第1の有機樹脂層を硬化させることにより、前記第1の有機樹脂層の第1の面から前記第1の面と反対側の第2の面に達する第1の導電体を形成し、
前記基板から素子形成層を剥離し、剥離面において前記第1の保護膜及び前記第2の保護膜を選択的に除去することにより、前記第1の有機樹脂層に形成された第1の導電体を露出させ、
前記剥離面に第2の有機樹脂層を形成し、
前記第2の有機樹脂層を硬化させる前に、導電体を有する第2のペーストを、前記第2の有機樹脂層の第1の面上に形成し、
前記第2のペーストを前記第2の有機樹脂層内に浸透させた後に前記第2の有機樹脂層を硬化させることにより、前記第2の有機樹脂層の第1の面から該第1の面と反対側の第2の面に達し、且つ前記第1の導電体と電気的に接続する第2の導電体を形成することを特徴とする半導体装置の作製方法。 - 請求項2において、
前記第1の有機樹脂層の第1の面上に形成する前記第1のペーストを網目状に形成し、
前記第2の有機樹脂層の第1の面上に形成する前記第2のペーストを網目状に形成することを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項3のいずれか一項において、
前記第1の有機樹脂層又は前記第2の有機樹脂層の少なくとも一方に代えて、繊維体に有機樹脂が含浸された構造体を用いることを特徴とする半導体装置の作製方法。 - 請求項4において、
前記有機樹脂としてエポキシ樹脂を用い、
前記第1のペースト及び前記第2のペーストとして銀ペーストを用いることを特徴とする半導体装置の作製方法。 - 互いに対向するように設けられた第1の有機樹脂層及び第2の有機樹脂層と、
前記第1の有機樹脂層と前記第2の有機樹脂層との間に設けられた半導体集積回路及びアンテナを有する素子形成層と、
前記第1の有機樹脂層の第1の面に設けられた第1の導電膜と、
前記第2の有機樹脂層の第1の面に設けられた第2の導電膜と、
前記第1の導電膜と電気的に接続され且つ前記第1の有機樹脂層の第1の面から該第1の面の反対側の第2の面に達する第1の導電体と、
前記第2の導電膜と電気的に接続され且つ前記第2の有機樹脂層の第1の面から該第1の面の反対側の第2の面に達する第2の導電体とを有し、
少なくとも前記第1の有機樹脂層は繊維体に有機樹脂が含浸された構造体を有し、
前記第1の導電体は、前記繊維体の隙間を介して前記第1の有機樹脂層内に設けられており、
前記第1の導電膜と前記第2の導電膜は、前記第1の導電体と前記第2の導電体を介して電気的に接続されていることを特徴とする半導体装置。 - 請求項6において、
前記第1の導電体及び前記第2の導電体が銀であることを特徴とする半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009127681A JP5248412B2 (ja) | 2008-06-06 | 2009-05-27 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008149535 | 2008-06-06 | ||
JP2008149535 | 2008-06-06 | ||
JP2009127681A JP5248412B2 (ja) | 2008-06-06 | 2009-05-27 | 半導体装置の作製方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013081777A Division JP5427308B2 (ja) | 2008-06-06 | 2013-04-10 | 半導体装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010015550A true JP2010015550A (ja) | 2010-01-21 |
JP2010015550A5 JP2010015550A5 (ja) | 2012-06-14 |
JP5248412B2 JP5248412B2 (ja) | 2013-07-31 |
Family
ID=40933697
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009127681A Expired - Fee Related JP5248412B2 (ja) | 2008-06-06 | 2009-05-27 | 半導体装置の作製方法 |
JP2013081777A Expired - Fee Related JP5427308B2 (ja) | 2008-06-06 | 2013-04-10 | 半導体装置 |
JP2013247344A Expired - Fee Related JP5675939B2 (ja) | 2008-06-06 | 2013-11-29 | 構造体の作製方法 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013081777A Expired - Fee Related JP5427308B2 (ja) | 2008-06-06 | 2013-04-10 | 半導体装置 |
JP2013247344A Expired - Fee Related JP5675939B2 (ja) | 2008-06-06 | 2013-11-29 | 構造体の作製方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7888163B2 (ja) |
EP (1) | EP2131394A1 (ja) |
JP (3) | JP5248412B2 (ja) |
TW (1) | TWI472009B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019537269A (ja) * | 2016-11-26 | 2019-12-19 | 日本テキサス・インスツルメンツ合同会社 | 相互接続領域の上の集積回路ナノ粒子熱配路構造 |
JP2020502787A (ja) * | 2016-11-26 | 2020-01-23 | 日本テキサス・インスツルメンツ合同会社 | 相互接続領域における集積回路ナノ粒子熱配路構造 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009142310A1 (en) * | 2008-05-23 | 2009-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US8053253B2 (en) | 2008-06-06 | 2011-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
CN102057488B (zh) * | 2008-06-06 | 2013-09-18 | 株式会社半导体能源研究所 | 半导体装置的制造方法 |
JP2010041045A (ja) | 2008-07-09 | 2010-02-18 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
WO2010032611A1 (en) * | 2008-09-19 | 2010-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
WO2010035627A1 (en) | 2008-09-25 | 2010-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP5583951B2 (ja) * | 2008-11-11 | 2014-09-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
TWI517268B (zh) * | 2009-08-07 | 2016-01-11 | 半導體能源研究所股份有限公司 | 端子構造的製造方法和電子裝置的製造方法 |
JP5719560B2 (ja) * | 2009-10-21 | 2015-05-20 | 株式会社半導体エネルギー研究所 | 端子構造の作製方法 |
US9105701B2 (en) * | 2013-06-10 | 2015-08-11 | Micron Technology, Inc. | Semiconductor devices having compact footprints |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0585092A (ja) * | 1991-09-27 | 1993-04-06 | Sony Corp | 半導体装置 |
JPH10198778A (ja) * | 1997-01-14 | 1998-07-31 | Rohm Co Ltd | Icカード |
JPH10302037A (ja) * | 1997-04-23 | 1998-11-13 | Nippon Dry Chem Co Ltd | Idタグ |
JP2002366918A (ja) * | 2001-06-08 | 2002-12-20 | Toppan Printing Co Ltd | 非接触icカード |
JP2008263427A (ja) * | 2007-04-12 | 2008-10-30 | Fujitsu Ltd | Rfidタグ及びrfidタグホルダ |
Family Cites Families (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1990008802A1 (en) | 1989-01-25 | 1990-08-09 | Asahi Kasei Kogyo Kabushiki Kaisha | New prepreg and composite molding, and production of composite molding |
DE3907757A1 (de) | 1989-03-10 | 1990-09-13 | Mtu Muenchen Gmbh | Schutzfolie |
JPH05190582A (ja) | 1992-01-08 | 1993-07-30 | Oki Electric Ind Co Ltd | 樹脂封止半導体装置及びその製造方法 |
JP3428070B2 (ja) | 1993-06-07 | 2003-07-22 | 株式会社東芝 | 印刷配線板の製造方法 |
TW371285B (en) | 1994-09-19 | 1999-10-01 | Amp Akzo Linlam Vof | Foiled UD-prepreg and PWB laminate prepared therefrom |
JP3364081B2 (ja) | 1995-02-16 | 2003-01-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP3406727B2 (ja) | 1995-03-10 | 2003-05-12 | 株式会社半導体エネルギー研究所 | 表示装置 |
US5757456A (en) | 1995-03-10 | 1998-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method of fabricating involving peeling circuits from one substrate and mounting on other |
JPH1092980A (ja) * | 1996-09-13 | 1998-04-10 | Toshiba Corp | 無線カードおよびその製造方法 |
JP3500908B2 (ja) | 1997-04-28 | 2004-02-23 | 松下電器産業株式会社 | カードリーダ |
JPH11317475A (ja) | 1998-02-27 | 1999-11-16 | Canon Inc | 半導体用封止材樹脂および半導体素子 |
TW484101B (en) | 1998-12-17 | 2002-04-21 | Hitachi Ltd | Semiconductor device and its manufacturing method |
JP2000231619A (ja) | 1999-02-10 | 2000-08-22 | Nippon Telegr & Teleph Corp <Ntt> | 接触型icカード |
US6224965B1 (en) | 1999-06-25 | 2001-05-01 | Honeywell International Inc. | Microfiber dielectrics which facilitate laser via drilling |
JP4423779B2 (ja) | 1999-10-13 | 2010-03-03 | 味の素株式会社 | エポキシ樹脂組成物並びに該組成物を用いた接着フィルム及びプリプレグ、及びこれらを用いた多層プリント配線板及びその製造法 |
JP4347496B2 (ja) | 2000-03-31 | 2009-10-21 | 共同印刷株式会社 | 可逆性感熱記録媒体の製造方法 |
US8415208B2 (en) | 2001-07-16 | 2013-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and peeling off method and method of manufacturing semiconductor device |
JP4027740B2 (ja) | 2001-07-16 | 2007-12-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6800223B2 (en) * | 2001-08-24 | 2004-10-05 | E. I. Du Pont De Nemours And Company | Thermosetting electroconductive paste for electroconductive bump use |
KR100430001B1 (ko) | 2001-12-18 | 2004-05-03 | 엘지전자 주식회사 | 다층기판의 제조방법, 그 다층기판의 패드 형성방법 및 그다층기판을 이용한 반도체 패키지의 제조방법 |
JP2003261745A (ja) * | 2002-03-11 | 2003-09-19 | Sumitomo Bakelite Co Ltd | エポキシ樹脂組成物及び半導体装置 |
US7485489B2 (en) | 2002-06-19 | 2009-02-03 | Bjoersell Sten | Electronics circuit manufacture |
EP1514307A1 (en) | 2002-06-19 | 2005-03-16 | Sten Bjorsell | Electronics circuit manufacture |
US7132311B2 (en) | 2002-07-26 | 2006-11-07 | Intel Corporation | Encapsulation of a stack of semiconductor dice |
JP4012025B2 (ja) | 2002-09-24 | 2007-11-21 | 大日本印刷株式会社 | 微小構造体付きフィルムの製造方法と微小構造体付きフィルム |
JP3741216B2 (ja) * | 2003-03-03 | 2006-02-01 | セイコーエプソン株式会社 | 配線基板の製造方法 |
JP4828088B2 (ja) | 2003-06-05 | 2011-11-30 | 凸版印刷株式会社 | Icタグ |
JP3982479B2 (ja) * | 2003-10-28 | 2007-09-26 | 松下電工株式会社 | 電気部品内蔵回路板及びその製造方法 |
EP1709688A4 (en) | 2004-01-30 | 2014-12-31 | Semiconductor Energy Lab | SEMICONDUCTOR COMPONENT |
US20050233122A1 (en) | 2004-04-19 | 2005-10-20 | Mikio Nishimura | Manufacturing method of laminated substrate, and manufacturing apparatus of semiconductor device for module and laminated substrate for use therein |
CN101789378B (zh) | 2004-06-02 | 2012-07-04 | 株式会社半导体能源研究所 | 用于制造半导体器件的方法 |
US7591863B2 (en) | 2004-07-16 | 2009-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Laminating system, IC sheet, roll of IC sheet, and method for manufacturing IC chip |
CN100474629C (zh) | 2004-08-23 | 2009-04-01 | 株式会社半导体能源研究所 | 无线芯片及其制造方法 |
JP4611766B2 (ja) * | 2005-02-16 | 2011-01-12 | トッパン・フォームズ株式会社 | 非接触型データ受送信体 |
US7342490B2 (en) | 2004-11-23 | 2008-03-11 | Alien Technology Corporation | Radio frequency identification static discharge protection |
JP2007043121A (ja) * | 2005-06-30 | 2007-02-15 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
US7727859B2 (en) * | 2005-06-30 | 2010-06-01 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device and manufacturing method thereof |
US7863188B2 (en) | 2005-07-29 | 2011-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US8427380B2 (en) | 2005-07-29 | 2013-04-23 | Foster-Miller, Inc. | Dual function composite system and method of making same |
JP2007059821A (ja) | 2005-08-26 | 2007-03-08 | Shinko Electric Ind Co Ltd | 配線基板の製造方法 |
JP4251185B2 (ja) | 2006-01-23 | 2009-04-08 | ソニー株式会社 | 半導体集積回路カードの製造方法 |
JP2007241999A (ja) | 2006-02-08 | 2007-09-20 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
DE602007013478D1 (de) | 2006-02-08 | 2011-05-12 | Semiconductor Energy Lab | RFID-Vorrichtung |
TWI431726B (zh) | 2006-06-01 | 2014-03-21 | Semiconductor Energy Lab | 非揮發性半導體記憶體裝置 |
KR101350207B1 (ko) | 2006-06-26 | 2014-01-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치를 포함하는 용지 및 그 제조 방법 |
EP1970951A3 (en) * | 2007-03-13 | 2009-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
EP1976001A3 (en) * | 2007-03-26 | 2012-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
EP2001047A1 (en) | 2007-06-07 | 2008-12-10 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device |
-
2009
- 2009-05-27 JP JP2009127681A patent/JP5248412B2/ja not_active Expired - Fee Related
- 2009-05-28 US US12/473,299 patent/US7888163B2/en not_active Expired - Fee Related
- 2009-05-28 EP EP09161307A patent/EP2131394A1/en not_active Withdrawn
- 2009-06-04 TW TW98118565A patent/TWI472009B/zh not_active IP Right Cessation
-
2013
- 2013-04-10 JP JP2013081777A patent/JP5427308B2/ja not_active Expired - Fee Related
- 2013-11-29 JP JP2013247344A patent/JP5675939B2/ja not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0585092A (ja) * | 1991-09-27 | 1993-04-06 | Sony Corp | 半導体装置 |
JPH10198778A (ja) * | 1997-01-14 | 1998-07-31 | Rohm Co Ltd | Icカード |
JPH10302037A (ja) * | 1997-04-23 | 1998-11-13 | Nippon Dry Chem Co Ltd | Idタグ |
JP2002366918A (ja) * | 2001-06-08 | 2002-12-20 | Toppan Printing Co Ltd | 非接触icカード |
JP2008263427A (ja) * | 2007-04-12 | 2008-10-30 | Fujitsu Ltd | Rfidタグ及びrfidタグホルダ |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019537269A (ja) * | 2016-11-26 | 2019-12-19 | 日本テキサス・インスツルメンツ合同会社 | 相互接続領域の上の集積回路ナノ粒子熱配路構造 |
JP2020502787A (ja) * | 2016-11-26 | 2020-01-23 | 日本テキサス・インスツルメンツ合同会社 | 相互接続領域における集積回路ナノ粒子熱配路構造 |
JP7021826B2 (ja) | 2016-11-26 | 2022-02-17 | テキサス インスツルメンツ インコーポレイテッド | 相互接続領域の上の集積回路ナノ粒子熱配路構造 |
JP7045018B2 (ja) | 2016-11-26 | 2022-03-31 | テキサス インスツルメンツ インコーポレイテッド | 相互接続領域における集積回路ナノ粒子熱配路構造 |
Also Published As
Publication number | Publication date |
---|---|
US20090302455A1 (en) | 2009-12-10 |
EP2131394A1 (en) | 2009-12-09 |
JP2014112678A (ja) | 2014-06-19 |
US7888163B2 (en) | 2011-02-15 |
TWI472009B (zh) | 2015-02-01 |
JP5248412B2 (ja) | 2013-07-31 |
JP2013229023A (ja) | 2013-11-07 |
TW201013884A (en) | 2010-04-01 |
JP5675939B2 (ja) | 2015-02-25 |
JP5427308B2 (ja) | 2014-02-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5248412B2 (ja) | 半導体装置の作製方法 | |
JP5464914B2 (ja) | 半導体装置の作製方法 | |
JP5315134B2 (ja) | 半導体装置 | |
JP5380154B2 (ja) | 半導体装置 | |
TW200903720A (en) | Method for manufacturing semiconductor device | |
JP5779272B2 (ja) | 半導体装置 | |
JP5415713B2 (ja) | 半導体装置 | |
JP5877814B2 (ja) | 半導体装置 | |
JP5268459B2 (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120427 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120427 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130116 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130122 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130314 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130402 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130410 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160419 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |