JP2009539251A - レーザアブレーションレジスト - Google Patents

レーザアブレーションレジスト Download PDF

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Publication number
JP2009539251A
JP2009539251A JP2009513166A JP2009513166A JP2009539251A JP 2009539251 A JP2009539251 A JP 2009539251A JP 2009513166 A JP2009513166 A JP 2009513166A JP 2009513166 A JP2009513166 A JP 2009513166A JP 2009539251 A JP2009539251 A JP 2009539251A
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JP
Japan
Prior art keywords
resist
group
layer
substrate
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009513166A
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English (en)
Japanese (ja)
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JP2009539251A5 (enExample
Inventor
スコット イー フィリップス
ティモシー ジョン トレッドウェル
リー ダブリュ トット
グレン トーマス パース
ケルヴィン ヌグイエン
ロナルド マイロン ウェクスラー
Original Assignee
イーストマン コダック カンパニー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by イーストマン コダック カンパニー filed Critical イーストマン コダック カンパニー
Publication of JP2009539251A publication Critical patent/JP2009539251A/ja
Publication of JP2009539251A5 publication Critical patent/JP2009539251A5/ja
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
    • G03F7/202—Masking pattern being obtained by thermal means, e.g. laser ablation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/145—Infrared
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/146—Laser beam

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Architecture (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Laser Beam Processing (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2009513166A 2006-05-30 2007-05-15 レーザアブレーションレジスト Pending JP2009539251A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/420,817 US7867688B2 (en) 2006-05-30 2006-05-30 Laser ablation resist
PCT/US2007/011626 WO2007142788A2 (en) 2006-05-30 2007-05-15 Laser ablation resist

Publications (2)

Publication Number Publication Date
JP2009539251A true JP2009539251A (ja) 2009-11-12
JP2009539251A5 JP2009539251A5 (enExample) 2010-06-24

Family

ID=38790660

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009513166A Pending JP2009539251A (ja) 2006-05-30 2007-05-15 レーザアブレーションレジスト

Country Status (7)

Country Link
US (1) US7867688B2 (enExample)
JP (1) JP2009539251A (enExample)
KR (1) KR20090023361A (enExample)
CN (1) CN101454720B (enExample)
DE (1) DE112007001312T5 (enExample)
TW (1) TW200805001A (enExample)
WO (1) WO2007142788A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014510419A (ja) * 2011-04-08 2014-04-24 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置、プログラマブル・パターニングデバイス、及びリソグラフィ方法
JP2024521080A (ja) * 2021-05-18 2024-05-28 アプライド マテリアルズ インコーポレイテッド 先進的なパッケージングのためのマイクロビア形成の方法

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US7633035B2 (en) * 2006-10-05 2009-12-15 Mu-Gahat Holdings Inc. Reverse side film laser circuit etching
US9164480B2 (en) * 2006-12-14 2015-10-20 General Electric Company Holographic data storage device and method of making
US8501371B2 (en) * 2006-12-14 2013-08-06 General Electric Company Holographic data storage method and system
JP5205042B2 (ja) * 2006-12-20 2013-06-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
US20090061251A1 (en) * 2007-08-27 2009-03-05 Mu-Gahat Enterprises, Llc Laser circuit etching by additive deposition
US20090061112A1 (en) * 2007-08-27 2009-03-05 Mu-Gahat Enterprises, Llc Laser circuit etching by subtractive deposition
US8546067B2 (en) * 2008-03-21 2013-10-01 The Board Of Trustees Of The University Of Illinois Material assisted laser ablation
JP5094535B2 (ja) * 2008-05-07 2012-12-12 富士フイルム株式会社 凹部形成方法、凹凸製品の製造方法、発光素子の製造方法および光学素子の製造方法
DE102008030725B4 (de) * 2008-07-01 2013-10-17 Deutsche Cell Gmbh Verfahren zur Herstellung einer Kontakt-Struktur mittels einer Galvanikmaske
US20110097666A1 (en) * 2009-10-27 2011-04-28 Celin Savariar-Hauck Lithographic printing plate precursors
US8512937B2 (en) * 2010-03-04 2013-08-20 The Regents Of The University Of California Lithographic dry development using optical absorption
FR2959865B1 (fr) * 2010-05-07 2013-04-05 Commissariat Energie Atomique Diminution des effets de casquettes dues a l'ablation laser d'un niveau metallique par utilisation d'une couche de polymere photo- ou thermo-reticulable non reticule
CN101942235B (zh) * 2010-10-21 2013-04-24 东莞光群雷射科技有限公司 一种水转印镭射涂层及其制备方法
TW201304092A (zh) * 2011-07-08 2013-01-16 矽品精密工業股份有限公司 半導體承載件暨封裝件及其製法
US20130160832A1 (en) * 2011-12-22 2013-06-27 Andreas Krause Marking of a substrate of a solar cell
DE102012100915A1 (de) * 2012-02-03 2013-08-22 Sandvik Surface Solutions Division Of Sandvik Materials Technology Deutschland Gmbh Verfahren zum Erzeugen von ätzresistenten Strukturen
US8980726B2 (en) * 2013-01-25 2015-03-17 Applied Materials, Inc. Substrate dicing by laser ablation and plasma etch damage removal for ultra-thin wafers
US8975177B2 (en) * 2013-03-14 2015-03-10 Intel Corporation Laser resist removal for integrated circuit (IC) packaging
US9412702B2 (en) 2013-03-14 2016-08-09 Intel Corporation Laser die backside film removal for integrated circuit (IC) packaging
GB2521417A (en) * 2013-12-19 2015-06-24 Swisslitho Ag Multiscale patterning of a sample with apparatus having both thermo-optical lithography capability and thermal scanning probe lithography capability
CA2931245C (en) 2015-05-26 2023-07-25 National Research Council Of Canada Metallic surface with karstified relief, forming same, and high surface area metallic electrochemical interface
US20170176856A1 (en) * 2015-12-21 2017-06-22 Az Electronic Materials (Luxembourg) S.A.R.L. Negative-working photoresist compositions for laser ablation and use thereof
US20170301928A1 (en) 2016-04-14 2017-10-19 Applied Materials, Inc. Device and method for maskless thin film etching
CN107459266B (zh) * 2017-08-09 2020-10-20 维达力实业(深圳)有限公司 盖板玻璃及其制作方法
DE102018129329A1 (de) * 2018-11-21 2020-05-28 Automotive Lighting Reutlingen Gmbh Verfahren zur Farbenlackabtragenden Laserbearbeitung eines lackierten Werkstücks
US11054593B1 (en) 2020-03-11 2021-07-06 Palo Alto Research Center Incorporated Chip-scale optoelectronic transceiver with microspringed interposer
US20220399206A1 (en) * 2021-06-11 2022-12-15 V-Finity Inc. Method for building conductive through-hole vias in glass substrates
US20240264530A1 (en) * 2022-12-28 2024-08-08 Intel Corporation Light responsive photoresists and methods

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014510419A (ja) * 2011-04-08 2014-04-24 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置、プログラマブル・パターニングデバイス、及びリソグラフィ方法
US9645502B2 (en) 2011-04-08 2017-05-09 Asml Netherlands B.V. Lithographic apparatus, programmable patterning device and lithographic method
JP2024521080A (ja) * 2021-05-18 2024-05-28 アプライド マテリアルズ インコーポレイテッド 先進的なパッケージングのためのマイクロビア形成の方法
JP7634116B2 (ja) 2021-05-18 2025-02-20 アプライド マテリアルズ インコーポレイテッド 先進的なパッケージングのためのマイクロビア形成の方法

Also Published As

Publication number Publication date
DE112007001312T5 (de) 2009-05-07
CN101454720A (zh) 2009-06-10
WO2007142788A3 (en) 2008-05-22
TW200805001A (en) 2008-01-16
US7867688B2 (en) 2011-01-11
US20070281247A1 (en) 2007-12-06
WO2007142788A2 (en) 2007-12-13
KR20090023361A (ko) 2009-03-04
CN101454720B (zh) 2012-11-14

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