KR20090023361A - 레이저 삭마 레지스트 - Google Patents

레이저 삭마 레지스트 Download PDF

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Publication number
KR20090023361A
KR20090023361A KR1020087029039A KR20087029039A KR20090023361A KR 20090023361 A KR20090023361 A KR 20090023361A KR 1020087029039 A KR1020087029039 A KR 1020087029039A KR 20087029039 A KR20087029039 A KR 20087029039A KR 20090023361 A KR20090023361 A KR 20090023361A
Authority
KR
South Korea
Prior art keywords
resist
layer
substrate
pattern
polymeric binder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020087029039A
Other languages
English (en)
Korean (ko)
Inventor
스콧트 이 필립스
티모씨 존 트레드웰
리 더블유 튜트
글렌 토마스 피어스
켈빈 느구엔
로날드 마이론 웩슬러
Original Assignee
이스트맨 코닥 캄파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이스트맨 코닥 캄파니 filed Critical 이스트맨 코닥 캄파니
Publication of KR20090023361A publication Critical patent/KR20090023361A/ko
Withdrawn legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
    • G03F7/202—Masking pattern being obtained by thermal means, e.g. laser ablation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/145—Infrared
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/146—Laser beam

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Architecture (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Laser Beam Processing (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020087029039A 2006-05-30 2007-05-15 레이저 삭마 레지스트 Withdrawn KR20090023361A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/420,817 2006-05-30
US11/420,817 US7867688B2 (en) 2006-05-30 2006-05-30 Laser ablation resist

Publications (1)

Publication Number Publication Date
KR20090023361A true KR20090023361A (ko) 2009-03-04

Family

ID=38790660

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087029039A Withdrawn KR20090023361A (ko) 2006-05-30 2007-05-15 레이저 삭마 레지스트

Country Status (7)

Country Link
US (1) US7867688B2 (enExample)
JP (1) JP2009539251A (enExample)
KR (1) KR20090023361A (enExample)
CN (1) CN101454720B (enExample)
DE (1) DE112007001312T5 (enExample)
TW (1) TW200805001A (enExample)
WO (1) WO2007142788A2 (enExample)

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US20090061112A1 (en) * 2007-08-27 2009-03-05 Mu-Gahat Enterprises, Llc Laser circuit etching by subtractive deposition
US8546067B2 (en) * 2008-03-21 2013-10-01 The Board Of Trustees Of The University Of Illinois Material assisted laser ablation
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US20170176856A1 (en) * 2015-12-21 2017-06-22 Az Electronic Materials (Luxembourg) S.A.R.L. Negative-working photoresist compositions for laser ablation and use thereof
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CN107459266B (zh) * 2017-08-09 2020-10-20 维达力实业(深圳)有限公司 盖板玻璃及其制作方法
DE102018129329A1 (de) * 2018-11-21 2020-05-28 Automotive Lighting Reutlingen Gmbh Verfahren zur Farbenlackabtragenden Laserbearbeitung eines lackierten Werkstücks
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Also Published As

Publication number Publication date
DE112007001312T5 (de) 2009-05-07
CN101454720A (zh) 2009-06-10
WO2007142788A3 (en) 2008-05-22
TW200805001A (en) 2008-01-16
US7867688B2 (en) 2011-01-11
US20070281247A1 (en) 2007-12-06
WO2007142788A2 (en) 2007-12-13
CN101454720B (zh) 2012-11-14
JP2009539251A (ja) 2009-11-12

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Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20081127

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid