DE112007001312T5 - Laserablationslack - Google Patents
Laserablationslack Download PDFInfo
- Publication number
- DE112007001312T5 DE112007001312T5 DE112007001312T DE112007001312T DE112007001312T5 DE 112007001312 T5 DE112007001312 T5 DE 112007001312T5 DE 112007001312 T DE112007001312 T DE 112007001312T DE 112007001312 T DE112007001312 T DE 112007001312T DE 112007001312 T5 DE112007001312 T5 DE 112007001312T5
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- Prior art keywords
- layer
- paint
- substrate
- polymer binder
- pattern
- Prior art date
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- VLTOSDJJTWPWLS-UHFFFAOYSA-N pent-2-ynal Chemical compound CCC#CC=O VLTOSDJJTWPWLS-UHFFFAOYSA-N 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920002721 polycyanoacrylate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 150000008442 polyphenolic compounds Chemical class 0.000 description 1
- 235000013824 polyphenols Nutrition 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229920001290 polyvinyl ester Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 235000021251 pulses Nutrition 0.000 description 1
- 150000004053 quinones Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002940 repellent Effects 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- XJPANWOKBWZVHC-UHFFFAOYSA-N tetrazol-2-amine Chemical compound NN1N=CN=N1 XJPANWOKBWZVHC-UHFFFAOYSA-N 0.000 description 1
- 150000003536 tetrazoles Chemical class 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 238000012800 visualization Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910052727 yttrium Chemical group 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
- G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
- G03F7/202—Masking pattern being obtained by thermal means, e.g. laser ablation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/145—Infrared
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/146—Laser beam
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Architecture (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Structural Engineering (AREA)
- Optics & Photonics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Laser Beam Processing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/420,817 | 2006-05-30 | ||
| US11/420,817 US7867688B2 (en) | 2006-05-30 | 2006-05-30 | Laser ablation resist |
| PCT/US2007/011626 WO2007142788A2 (en) | 2006-05-30 | 2007-05-15 | Laser ablation resist |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE112007001312T5 true DE112007001312T5 (de) | 2009-05-07 |
Family
ID=38790660
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112007001312T Withdrawn DE112007001312T5 (de) | 2006-05-30 | 2007-05-15 | Laserablationslack |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7867688B2 (enExample) |
| JP (1) | JP2009539251A (enExample) |
| KR (1) | KR20090023361A (enExample) |
| CN (1) | CN101454720B (enExample) |
| DE (1) | DE112007001312T5 (enExample) |
| TW (1) | TW200805001A (enExample) |
| WO (1) | WO2007142788A2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020104599A1 (de) * | 2018-11-21 | 2020-05-28 | Automotive Lighting Reutlingen Gmbh | Verfahren zur farbenlackabtragenden laserbearbeitung eines lackierten werkstücks |
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| US7927991B2 (en) * | 2006-08-25 | 2011-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US7633035B2 (en) * | 2006-10-05 | 2009-12-15 | Mu-Gahat Holdings Inc. | Reverse side film laser circuit etching |
| US20080083706A1 (en) * | 2006-10-05 | 2008-04-10 | Mu-Gahat Enterprises, Llc | Reverse side film laser circuit etching |
| US8501371B2 (en) * | 2006-12-14 | 2013-08-06 | General Electric Company | Holographic data storage method and system |
| US9164480B2 (en) * | 2006-12-14 | 2015-10-20 | General Electric Company | Holographic data storage device and method of making |
| JP5205042B2 (ja) * | 2006-12-20 | 2013-06-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US20090061251A1 (en) * | 2007-08-27 | 2009-03-05 | Mu-Gahat Enterprises, Llc | Laser circuit etching by additive deposition |
| US20090061112A1 (en) * | 2007-08-27 | 2009-03-05 | Mu-Gahat Enterprises, Llc | Laser circuit etching by subtractive deposition |
| US8546067B2 (en) * | 2008-03-21 | 2013-10-01 | The Board Of Trustees Of The University Of Illinois | Material assisted laser ablation |
| JP5094535B2 (ja) * | 2008-05-07 | 2012-12-12 | 富士フイルム株式会社 | 凹部形成方法、凹凸製品の製造方法、発光素子の製造方法および光学素子の製造方法 |
| DE102008030725B4 (de) * | 2008-07-01 | 2013-10-17 | Deutsche Cell Gmbh | Verfahren zur Herstellung einer Kontakt-Struktur mittels einer Galvanikmaske |
| US20110097666A1 (en) * | 2009-10-27 | 2011-04-28 | Celin Savariar-Hauck | Lithographic printing plate precursors |
| US8512937B2 (en) * | 2010-03-04 | 2013-08-20 | The Regents Of The University Of California | Lithographic dry development using optical absorption |
| FR2959865B1 (fr) * | 2010-05-07 | 2013-04-05 | Commissariat Energie Atomique | Diminution des effets de casquettes dues a l'ablation laser d'un niveau metallique par utilisation d'une couche de polymere photo- ou thermo-reticulable non reticule |
| CN101942235B (zh) * | 2010-10-21 | 2013-04-24 | 东莞光群雷射科技有限公司 | 一种水转印镭射涂层及其制备方法 |
| NL2008426A (en) * | 2011-04-08 | 2012-10-09 | Asml Netherlands Bv | Lithographic apparatus, programmable patterning device and lithographic method. |
| TW201304092A (zh) * | 2011-07-08 | 2013-01-16 | 矽品精密工業股份有限公司 | 半導體承載件暨封裝件及其製法 |
| US20130160832A1 (en) * | 2011-12-22 | 2013-06-27 | Andreas Krause | Marking of a substrate of a solar cell |
| DE102012100915A1 (de) * | 2012-02-03 | 2013-08-22 | Sandvik Surface Solutions Division Of Sandvik Materials Technology Deutschland Gmbh | Verfahren zum Erzeugen von ätzresistenten Strukturen |
| US8980726B2 (en) * | 2013-01-25 | 2015-03-17 | Applied Materials, Inc. | Substrate dicing by laser ablation and plasma etch damage removal for ultra-thin wafers |
| US8975177B2 (en) * | 2013-03-14 | 2015-03-10 | Intel Corporation | Laser resist removal for integrated circuit (IC) packaging |
| US9412702B2 (en) | 2013-03-14 | 2016-08-09 | Intel Corporation | Laser die backside film removal for integrated circuit (IC) packaging |
| GB2521417A (en) * | 2013-12-19 | 2015-06-24 | Swisslitho Ag | Multiscale patterning of a sample with apparatus having both thermo-optical lithography capability and thermal scanning probe lithography capability |
| US10522300B2 (en) | 2015-05-26 | 2019-12-31 | National Research Council Of Canada | Metallic surface with karstified relief, forming same, and high surface area metallic electrochemical interface |
| US20170176856A1 (en) * | 2015-12-21 | 2017-06-22 | Az Electronic Materials (Luxembourg) S.A.R.L. | Negative-working photoresist compositions for laser ablation and use thereof |
| US20170301956A1 (en) * | 2016-04-14 | 2017-10-19 | Applied Materials, Inc. | Thin film battery device having recessed substrate and method of formation |
| CN107459266B (zh) * | 2017-08-09 | 2020-10-20 | 维达力实业(深圳)有限公司 | 盖板玻璃及其制作方法 |
| US11054593B1 (en) * | 2020-03-11 | 2021-07-06 | Palo Alto Research Center Incorporated | Chip-scale optoelectronic transceiver with microspringed interposer |
| US11705365B2 (en) * | 2021-05-18 | 2023-07-18 | Applied Materials, Inc. | Methods of micro-via formation for advanced packaging |
| US20220399206A1 (en) * | 2021-06-11 | 2022-12-15 | V-Finity Inc. | Method for building conductive through-hole vias in glass substrates |
| US20240264530A1 (en) * | 2022-12-28 | 2024-08-08 | Intel Corporation | Light responsive photoresists and methods |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020104599A1 (de) * | 2018-11-21 | 2020-05-28 | Automotive Lighting Reutlingen Gmbh | Verfahren zur farbenlackabtragenden laserbearbeitung eines lackierten werkstücks |
| CN113286678A (zh) * | 2018-11-21 | 2021-08-20 | 马瑞利汽车照明(德国)有限公司 | 用于涂漆工件的除漆激光加工的方法 |
| US12138711B2 (en) | 2018-11-21 | 2024-11-12 | Marelli Automotive Lighting Reutlingen (Germany) GmbH | Method for the lacquer-removing laser machining of a painted workpiece |
Also Published As
| Publication number | Publication date |
|---|---|
| US20070281247A1 (en) | 2007-12-06 |
| WO2007142788A2 (en) | 2007-12-13 |
| JP2009539251A (ja) | 2009-11-12 |
| TW200805001A (en) | 2008-01-16 |
| US7867688B2 (en) | 2011-01-11 |
| CN101454720B (zh) | 2012-11-14 |
| KR20090023361A (ko) | 2009-03-04 |
| CN101454720A (zh) | 2009-06-10 |
| WO2007142788A3 (en) | 2008-05-22 |
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