CN101454720B - 激光烧蚀抗蚀剂 - Google Patents

激光烧蚀抗蚀剂 Download PDF

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Publication number
CN101454720B
CN101454720B CN2007800197592A CN200780019759A CN101454720B CN 101454720 B CN101454720 B CN 101454720B CN 2007800197592 A CN2007800197592 A CN 2007800197592A CN 200780019759 A CN200780019759 A CN 200780019759A CN 101454720 B CN101454720 B CN 101454720B
Authority
CN
China
Prior art keywords
resist
layer
substrate
pattern
polymeric binder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2007800197592A
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English (en)
Chinese (zh)
Other versions
CN101454720A (zh
Inventor
S·E·飞利普
T·J·崔威尔
L·W·塔特
G·T·皮尔斯
K·恩古颜
R·M·威克勒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Publication of CN101454720A publication Critical patent/CN101454720A/zh
Application granted granted Critical
Publication of CN101454720B publication Critical patent/CN101454720B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
    • G03F7/202—Masking pattern being obtained by thermal means, e.g. laser ablation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/145—Infrared
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/146—Laser beam

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Architecture (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Laser Beam Processing (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN2007800197592A 2006-05-30 2007-05-15 激光烧蚀抗蚀剂 Expired - Fee Related CN101454720B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/420,817 2006-05-30
US11/420,817 US7867688B2 (en) 2006-05-30 2006-05-30 Laser ablation resist
PCT/US2007/011626 WO2007142788A2 (en) 2006-05-30 2007-05-15 Laser ablation resist

Publications (2)

Publication Number Publication Date
CN101454720A CN101454720A (zh) 2009-06-10
CN101454720B true CN101454720B (zh) 2012-11-14

Family

ID=38790660

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007800197592A Expired - Fee Related CN101454720B (zh) 2006-05-30 2007-05-15 激光烧蚀抗蚀剂

Country Status (7)

Country Link
US (1) US7867688B2 (enExample)
JP (1) JP2009539251A (enExample)
KR (1) KR20090023361A (enExample)
CN (1) CN101454720B (enExample)
DE (1) DE112007001312T5 (enExample)
TW (1) TW200805001A (enExample)
WO (1) WO2007142788A2 (enExample)

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US20090061112A1 (en) * 2007-08-27 2009-03-05 Mu-Gahat Enterprises, Llc Laser circuit etching by subtractive deposition
US8546067B2 (en) * 2008-03-21 2013-10-01 The Board Of Trustees Of The University Of Illinois Material assisted laser ablation
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CN101942235B (zh) * 2010-10-21 2013-04-24 东莞光群雷射科技有限公司 一种水转印镭射涂层及其制备方法
KR101538414B1 (ko) 2011-04-08 2015-07-22 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치, 프로그래밍 가능한 패터닝 디바이스 및 리소그래피 방법
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CN107459266B (zh) * 2017-08-09 2020-10-20 维达力实业(深圳)有限公司 盖板玻璃及其制作方法
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CN1415082A (zh) * 2000-02-22 2003-04-30 麦克德米德图像技术有限公司 包含复层滑动膜的激光成像印刷版

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Also Published As

Publication number Publication date
DE112007001312T5 (de) 2009-05-07
CN101454720A (zh) 2009-06-10
WO2007142788A3 (en) 2008-05-22
TW200805001A (en) 2008-01-16
US7867688B2 (en) 2011-01-11
US20070281247A1 (en) 2007-12-06
WO2007142788A2 (en) 2007-12-13
KR20090023361A (ko) 2009-03-04
JP2009539251A (ja) 2009-11-12

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