CN1144344A - 形成光致抗蚀图形的方法 - Google Patents

形成光致抗蚀图形的方法 Download PDF

Info

Publication number
CN1144344A
CN1144344A CN95109580A CN95109580A CN1144344A CN 1144344 A CN1144344 A CN 1144344A CN 95109580 A CN95109580 A CN 95109580A CN 95109580 A CN95109580 A CN 95109580A CN 1144344 A CN1144344 A CN 1144344A
Authority
CN
China
Prior art keywords
photo
corrosion resistant
resistant film
induced corrosion
monomer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN95109580A
Other languages
English (en)
Other versions
CN1074550C (zh
Inventor
全焌成
李容爽
白基镐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of CN1144344A publication Critical patent/CN1144344A/zh
Application granted granted Critical
Publication of CN1074550C publication Critical patent/CN1074550C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Silicon Polymers (AREA)

Abstract

一种形成光致抗蚀图形的方法，它包括下列步骤：在底层上涂覆化学增强的光致抗蚀薄膜；在该化学增强的光致抗蚀薄膜上形成硅单体层；通过一个掩模使该单体层曝光，以选择性地聚合该硅单体；通过显影处理去除该单体层的未曝光区域；以及对剩余的聚合区域进行氧气等离子显影处理通过氧和包含在聚合区域的硅反应形成氧化物薄膜，并通过用所述氧化物薄膜作为掩模选择性蚀刻光致抗蚀薄膜形成的光致抗蚀图形。

Description

形成光致抗蚀图形的方法
本发明总的来说涉及形成光致抗蚀图形的方法，具体地说涉及形成单向扩散增强的甲硅烷基化的抗蚀剂(下文中称作“DESIRE”)的方法其中免去了硅注入工艺。
为了更好地理解本发明的背景技术，下面将结合图1叙述使用DESIRE工艺的常规方法。
图1A是涂覆在底层1上的化学增强的光致抗蚀剂3通过掩模4经曝光后形成辐照区域5的示意截面图。
图1B是通过甲硅烷基化工艺将硅注入曝光区域5之后形成甲硅烷基化的抗蚀区域6的示意截面图。
图1C是进行氧气等离子显影处理之后同时通过氧气和甲硅烷基化的抗蚀区域6中的硅反应形成氧化硅薄膜7以及通过光致抗蚀剂3将未曝光区域蚀刻后形成光致抗蚀图形3’的示意截面图。
该常规DESIRE方法中的一个明显的问题是临界尺寸被改变，这是由于工艺之间的时间延迟而发生水解，使硅向外扩散。而且，该常规方法在图形坚固性方面是有问题的。即，当使用四甲基二硅氮烷(TMDS)(一种含有二甲基硅的化合物)或六甲基二硅氮烷(HMDS)(一种含有三甲基硅的化合物)时，由于这些化合物的庞大而发生膨胀。结果，图形发生变形。
因此，本发明的主要目的就是要克服现有技术中遇到的上述问题并提供一种用于形成光致抗蚀图形的简单方法，它能免去硅注入工艺而显示出硅注入的效果。
经过本发明者广泛而深入的研究，通过提供一种形成光致抗蚀图形的方法即可达到上述目的，该方法的步骤包括：在底层上涂覆化学增强的光致抗蚀薄膜；在该化学增强的光致抗蚀薄膜上形成硅单体层；通过一个掩模使该单体层曝光，以选择性地聚合该硅单体；通过显影处理去除该单体层的未曝光区域；以及对剩余的聚合区域进行氧气等离子显影处理通过氧和包含在聚合区域的硅反应以形成氧化物薄膜，并通过用所述氧化物薄膜作为掩模选择性蚀刻光致抗蚀薄膜形成的光致抗蚀图形。
根据本发明，硅单体的曝光可从化学增强的光致抗蚀薄膜中产生质子它可引发硅单体的聚合反应。如此生成的聚合物在典型的显影液中不会被除去并可被用作以氧气等离子蚀刻光致抗蚀薄膜时的掩模，这是因为在该聚合物的上面形成了薄的氧化硅(SiO2)，它含有硅。
通过参照附图详述本发明的一些优选实施方案，本发明的上述目的和其它优点将更为清楚。
图1A至1C是说明用于形成光致抗蚀薄膜图形的常规的DESIRE方法的图解示意截面图；
图2A至2C是说明用于形成光致抗蚀薄膜图形的根据本发明的DESIRE方法示意截面图；
图3A和3B说明在本发明中有用的硅单体的结构式；以及
图4A和4B说明分别由图3A和3B的硅单体生成的聚合物的结构式。
参照这些附图可以很好地理解本发明优选实施方案的应用情况，图中相同和对应的部分使用相同的数字标示。
图2说明根据本发明的用于形成光致抗蚀图形的方法
首先，图2A是在涂覆在底层1上面的化学增强的光致抗蚀薄膜3上形成硅单体层之后，通过一个掩模4将该单体层曝光，以将该单体层2的曝光区域转变为含硅的聚合薄膜7的图解示意截面图。该聚合物是由硅单体本身的聚合反应生成的，该反应是由酸(H+)引发的。H+是通过曝光由光致抗蚀薄膜3中所含的光致酸发生器产生的。
图2B是用典型溶液进行显影处理以去除未曝光单体区域而留下聚合区域5之后的截面图。
图2C是由得到的图2B结构经氧气等离子显影，以通过氧和聚合物5中所含的硅反应生成氧化硅层7以及通过用氧化硅层7作为掩模选择性蚀刻光致抗蚀薄膜3生成光致抗蚀图形3’之后的截面图。
深度紫外线(deep ultra violet)、电子束或X一射线可用于使化学增强的光致抗蚀薄膜曝光。虽然本发明中只提到了负片类，但本发明也可用于正片类。
参见图3，它显示了用于本发明的硅单体的分子结构。在该分子结构中，R表示烷基或芳基。
参见图4，这些分子式说明了图3的硅单体的聚合反应。
常规DESIRE方法中的上述问题，即，由于工艺间的时间延迟使水得以生成而发生水解使硅的向外扩散而导致的不稳定的临界尺寸，可以通过本发明而得以解决。另外，根据本发明的方法能免去硅注入工艺而显示出硅注入的效果。
对于掌握常规技术的人来说，阅读了上面所揭示的内容之后，就不难明白本发明的其它特点、优点和实施方案了。虽然在此对本发明的一些具体实施方案作了相当详细的叙述，但可以在不超出所叙述的并提出权利要求的本发明的精神和范围的情况下，对这些实施方案进行变动和修改。

Claims (6)

1.一种形成光致抗蚀图形的方法，它包括下列步骤：
在底层上涂覆化学增强的光致抗蚀薄膜；
在该化学增强的光致抗蚀薄膜上形成硅单体层；
通过一个掩模使该单体层曝光，以选择性地聚合该硅单体；
通过显影处理去除该单体层的未曝光区域；以及
对剩余的聚合区域进行氧气等离子显影处理，通过氧和包含在聚合区域的硅反应形成氧化物薄膜，并通过用所述氧化物薄膜作为掩模选择性蚀刻光致抗蚀薄膜形成的光致抗蚀图形。
2.如权利要求1所述的方法，其特征在于所述的化学增强的光致抗蚀薄膜用深度紫外线、电子束或X-射线进行曝光。
3.如权利要求1或2所述的方法，其特征在于所述的化学增强的光致抗蚀薄膜是负片类或正片类的。
4.如权利要求1所述的方法，其特征在于所述的硅单体具有由下式表示的结构式：
Figure A9510958000021
其中，R表示烷基或芳基。
5.如权利要求1所述的方法，其特征在于所述的硅单体具有由下式表示的结构式：
Figure A9510958000031
其中，R表示烷基或芳基。
6.如权利要求1所述的方法，其特征在于所述硅单体的聚合反应是通过曝光由所述的光致抗蚀薄膜中所含的光致酸发生器产生的质子引发的。
CN95109580A 1994-10-12 1995-10-11 形成光致抗蚀图形的方法 Expired - Fee Related CN1074550C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019940026082A KR0140472B1 (ko) 1994-10-12 1994-10-12 감광막 패턴 형성방법
KR94-26082 1994-10-12

Publications (2)

Publication Number Publication Date
CN1144344A true CN1144344A (zh) 1997-03-05
CN1074550C CN1074550C (zh) 2001-11-07

Family

ID=19394938

Family Applications (1)

Application Number Title Priority Date Filing Date
CN95109580A Expired - Fee Related CN1074550C (zh) 1994-10-12 1995-10-11 形成光致抗蚀图形的方法

Country Status (6)

Country Link
US (1) US5759748A (zh)
JP (1) JP2840052B2 (zh)
KR (1) KR0140472B1 (zh)
CN (1) CN1074550C (zh)
DE (1) DE19537716C2 (zh)
GB (1) GB2294124B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102478762A (zh) * 2010-11-24 2012-05-30 中芯国际集成电路制造(上海)有限公司 光刻方法
CN101454720B (zh) * 2006-05-30 2012-11-14 伊斯曼柯达公司 激光烧蚀抗蚀剂

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6350706B1 (en) * 1998-09-03 2002-02-26 Micron Technology, Inc. Process for using photo-definable layers in the manufacture of semiconductor devices and resulting structures of same
US6140023A (en) * 1998-12-01 2000-10-31 Advanced Micro Devices, Inc. Method for transferring patterns created by lithography
KR100474544B1 (ko) * 1999-11-12 2005-03-08 주식회사 하이닉스반도체 Ｔｉｐｓ 공정용 포토레지스트 조성물
KR100694422B1 (ko) * 2000-07-31 2007-03-12 주식회사 하이닉스반도체 반도체소자의 제조방법
DE10114861B4 (de) * 2001-03-26 2004-02-26 Infineon Technologies Ag Verfahren und Vorrichtung zum Entlacken eines Bereiches auf einem Maskensubstrat
US6743734B2 (en) * 2002-07-17 2004-06-01 Macronix International Co., Ltd. Bi-layer resist process
US6566280B1 (en) * 2002-08-26 2003-05-20 Intel Corporation Forming polymer features on a substrate
JP2004103926A (ja) * 2002-09-11 2004-04-02 Renesas Technology Corp レジストパターン形成方法とそれを用いた半導体装置の製造方法およびレジスト表層処理剤
US7160665B2 (en) * 2002-12-30 2007-01-09 International Business Machines Corporation Method for employing vertical acid transport for lithographic imaging applications

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2306278A1 (de) * 1973-02-08 1974-08-15 Agfa Gevaert Ag Kameraempfindliche photomasken
US4232110A (en) * 1979-03-12 1980-11-04 Bell Telephone Laboratories, Incorporated Solid state devices formed by differential plasma etching of resists
US4560641A (en) * 1982-03-26 1985-12-24 Hitachi, Ltd. Method for forming fine multilayer resist patterns
DE3574418D1 (en) * 1984-05-30 1989-12-28 Fujitsu Ltd Pattern-forming material and its production and use
US4751171A (en) * 1984-07-03 1988-06-14 Matsushita Electric Industrial Co., Ltd. Pattern forming method
DE3537626A1 (de) * 1984-10-26 1986-04-30 Merck Patent Gmbh, 6100 Darmstadt Beschichtungsloesungen
JPS6354726A (ja) * 1986-08-25 1988-03-09 Fujitsu Ltd レジスト膜のエツチング方法
JP2569567B2 (ja) * 1987-06-19 1997-01-08 ソニー株式会社 レジストパタ−ンの形成方法
JP2737225B2 (ja) * 1989-03-27 1998-04-08 松下電器産業株式会社 微細パターン形成材料およびパターン形成方法
JPH05107769A (ja) * 1991-10-15 1993-04-30 Fujitsu Ltd 多層レジストのパターニング方法
JPH05205989A (ja) * 1992-01-28 1993-08-13 Hitachi Ltd リソグラフィ法及び半導体装置の製造方法
JPH0683063A (ja) * 1992-09-01 1994-03-25 Toray Ind Inc 化学線重合性組成物
KR950004910B1 (ko) * 1992-09-17 1995-05-15 삼성전자주식회사 다층감광막 사진식각방법
US5439781A (en) * 1993-05-10 1995-08-08 At&T Corp. Device fabrication entailing synchrotron radiation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101454720B (zh) * 2006-05-30 2012-11-14 伊斯曼柯达公司 激光烧蚀抗蚀剂
CN102478762A (zh) * 2010-11-24 2012-05-30 中芯国际集成电路制造(上海)有限公司 光刻方法

Also Published As

Publication number Publication date
KR0140472B1 (ko) 1998-06-15
KR960015075A (ko) 1996-05-22
US5759748A (en) 1998-06-02
DE19537716A1 (de) 1996-04-18
JPH08240913A (ja) 1996-09-17
GB9520610D0 (en) 1995-12-13
DE19537716C2 (de) 2000-03-09
JP2840052B2 (ja) 1998-12-24
GB2294124B (en) 1998-06-10
GB2294124A (en) 1996-04-17
CN1074550C (zh) 2001-11-07

Similar Documents

Publication Publication Date Title
JP3057879B2 (ja) 半導体装置の製造方法
CN1074550C (zh) 形成光致抗蚀图形的方法
US7790357B2 (en) Method of forming fine pattern of semiconductor device
KR100569536B1 (ko) Ｒｅｌａｃｓ 물질을 이용하여 패턴 붕괴를 방지하는 방법
JPS641047B2 (zh)
JPH0147008B2 (zh)
JPH05150459A (ja) レジストパターンの形成方法
DE4041409C2 (de) Verfahren zur Herstellung eines Reliefbildes
US4945028A (en) Method for formation of patterns using high energy beam
DE4410505A1 (de) Verfahren zum Herstellen eines Reliefbildes im Submikrometerbereich
KR970004758B1 (ko) 인쇄 배선기판의 제조방법
EP0285025A2 (en) Silylated poly(vinyl)phenol resists
US20060147835A1 (en) Chemically amplified photoresists and related methods
KR20010063778A (ko) 스컴제거방법
CN1185688C (zh) 图案化光阻的形成方法
KR960000180B1 (ko) 실리레이션 반응에 의한 레지스트패턴 형성방법
US20060292500A1 (en) Cure during rinse to prevent resist collapse
EP0622683A1 (en) Resist structures having through holes with shaped wall profiles and fabrication thereof
JPH01111324A (ja) 微細パターン形成方法
JPH05182904A (ja) パターン形成方法
EP0366937A2 (en) Method of forming relief patterns and use thereof
CN1381769A (zh) 用于照相制板工艺的增加聚焦深度的方法
JPH0344646A (ja) レジストパターンの形成方法
JP2000098162A (ja) フィルム型高分子導波路の形成方法
CN118192157A (zh) 在半导体器件中形成超窄特征沟槽的方法

Legal Events

Date Code Title Description
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20011107

Termination date: 20131011