CN1074550C - 形成光致抗蚀图形的方法 - Google Patents

形成光致抗蚀图形的方法 Download PDF

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CN1074550C
CN1074550C CN95109580A CN95109580A CN1074550C CN 1074550 C CN1074550 C CN 1074550C CN 95109580 A CN95109580 A CN 95109580A CN 95109580 A CN95109580 A CN 95109580A CN 1074550 C CN1074550 C CN 1074550C
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全焌成
李容爽
白基镐
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SK Hynix Inc
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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Abstract

一种形成光致抗蚀图形的方法，它包括下列步骤：在底层上涂覆化学增强的光致抗蚀薄膜；在该化学增强的光致抗蚀薄膜上形成硅单位层；通过一个掩模使该单体层曝光，以选择性地聚合该硅单位；通过显影处理去除该单体层的未曝光区域；以及对剩余的聚合区域进行氧气等离子显影处理通过氧和包含在聚合区域的硅反应形成氧化物薄膜，并通过用所述氧化物薄膜作为掩模选择性蚀刻光致抗蚀薄膜形成的光致抗蚀图形。

Description

形成光致抗蚀图形的方法
本发明总的来说涉及形成光致抗蚀图形的方法，具体地说涉及形成单向扩散增强的甲硅烷基化的抗蚀剂(下文中称作“DESIRE”)的方法其中免去了硅注入工艺。
为了更好地理解本发明的背景技术，下面将结合图1叙述使用DESIRE工艺的常规方法。
图1A是涂覆在底层1上的化学增强的光致抗蚀剂3通过掩模4经曝光后形成辐照区域5的示意截面图。
图1B是通过甲硅烷基化工艺将硅注入曝光区域5之后形成甲硅烷基化的抗蚀区域6的示意截面图。
图1C是进行氧气等离子显影处理之后同时通过氧气和甲硅烷基化的抗蚀区域6中的硅反应形成氧化硅薄膜7以及通过光致抗蚀剂3将未曝光区域蚀刻后形成光致抗蚀图形3’的示意截面图。
该常规DESIRE方法中的一个明显的问题是临界尺寸被改变，这是由于工艺之间的时间延迟而发生水解，使硅向外扩散。而且，该常规方法在图形坚固性方面是有问题的。即，当使用四甲基二硅氮烷(TMDS)(一种含有二甲基硅的化合物)或六甲基二硅氮烷(HMDS)(一种含有三甲基硅的化合物)时，由于这些化合物的庞大而发生膨胀。结果，图形发生变形。
因此，本发明的主要目的就是要克服现有技术中遇到的上述问题并提供一种用于形成光致抗蚀图形的简单方法，它能免去硅注入工艺而显示出硅注入的效果。
经过本发明者广泛而深入的研究，通过提供一种形成光致抗蚀图形的方法即可达到上述目的，该方法的步骤包括：在底层上涂覆化学增强的光致抗蚀薄膜；在该化学增强的光致抗蚀薄膜上形成硅单体层；通过一个掩模使该单体层曝光，以选择性地聚合该硅单体；通过显影处理去除该单体层的未曝光区域；以及对剩余的聚合区域进行氧气等离子显影处理通过氧和包含在聚合区域的硅反应以形成氧化物薄膜，并通过用所述氧化物薄膜作为掩模选择性蚀刻光致抗蚀薄膜形成光致抗蚀图形。
根据本发明，硅单体的曝光可从化学增强的光致抗蚀薄膜中产生质子它可引发硅单体的聚合反应。如此生成的聚合物在典型的显影液中不会被除去并可被用作以氧气等离子蚀刻光致抗蚀薄膜时的掩模，这是因为在该聚合物的上面形成了薄的氧化硅(SiO2)，它含有硅。
通过参照附图详述本发明的一些优选实施方案，本发明的上述目的和其它优点将更为清楚。
图1A至1C是说明用于形成光致抗蚀薄膜图形的常规的DESIRE方法的图解示意截面图；
图2A至2C是说明用于形成光致抗蚀薄膜图形的根据本发明的DESIRE方法示意截面图；
图3A和3B说明在本发明中有用的硅单体的结构式；以及
图4A和4B说明分别由图3A和3B的硅单体生成的聚合物的结构式。
参照这些附图可以很好地理解本发明优选实施方案的应用情况，图中相同和对应的部分使用相同的数字标示。
图2说明根据本发明的用于形成光致抗蚀图形的方法
首先，图2A是在涂覆在底层1上面的化学增强的光致抗蚀薄膜3上形成硅单体层之后，通过一个掩模4将该单体层曝光，以将该单体层2的曝光区域转变为含硅的聚合薄膜7的图解示意截面图。该聚合物是由硅单体本身的聚合反应生成的，该反应是由酸(H+)引发的。H+是通过曝光由光致抗蚀薄膜3中所含的光致酸发生器产生的。
图2B是用典型溶液进行显影处理以去除未曝光单体区域而留下聚合区域5之后的截面图。
图2C是由得到的图2B结构经氧气等离子显影，以通过氧和聚合物5中所含的硅反应生成氧化硅层7以及通过用氧化硅层7作为掩模选择性蚀刻光致抗蚀薄膜3生成光致抗蚀图形3’之后的截面图。
深度紫外线(deep ultra violet)、电子束或X-射线可用于使化学增强的光致抗蚀薄膜曝光。虽然本发明中只提到了负片类，但本发明也可用于正片类。
参见图3，它显示了用于本发明的硅单体的分子结构。在该分子结构中，R表示烷基或芳基。
参见图4，这些分子式说明了图3的硅单体的聚合反应。
常规DESIRE方法中的上述问题，即，由于工艺间的时间延迟使水得以生成而发生水解使硅的向外扩散而导致的不稳定的临界尺寸，可以通过本发明而得以解决。另外，根据本发明的方法能免去硅注入工艺而显示出硅注入的效果。
对于掌握常规技术的人来说，阅读了上面所揭示的内容之后，就不难明白本发明的其它特点、优点和实施方案了。虽然在此对本发明的一些具体实施方案作了相当详细的叙述，但可以在不超出所叙述的并提出权利要求的本发明的精神和范围的情况下，对这些实施方案进行变动和修改。

Claims (5)

1.一种形成光致抗蚀图形的方法，它包括下列步骤：
在底层上涂覆化学增强的光致抗蚀薄膜；
在该化学增强的光致抗蚀薄膜上形成硅单体层；
通过一个掩模使该单体层曝光，以选择性地聚合该硅单体，所述硅单体的聚合反应是通过曝光由所述光致抗蚀薄膜中所含的光致酸发生器产生的质子引发的；
通过显影处理去除该单体层的未曝光区域；以及
对剩余的聚合区域进行氧气等离子显影处理，通过氧和包含在聚合区域的硅反应形成氧化物薄膜，并通过用所述氧化物薄膜作为掩模选择性蚀刻光致抗蚀薄膜形成光致抗蚀图形。
2.如权利要求1所述的方法，其特征在于所述的化学增强的光致抗蚀薄膜用深度紫外线、电子束或X-射线进行曝光。
3.如权利要求1或2所述的方法，其特征在于所述的化学增强的光致抗蚀薄膜是负片类或正片类的。
4.如权利要求1所述的方法，其特征在于所述的硅单体具有由下式表示的结构式：其中，R表示烷基或芳基。
5.如权利要求1所述的方法，其特征在于所述的硅单体具有由下式表示的结构式：
Figure C9510958000031
其中，R表示烷基或芳基。
CN95109580A 1994-10-12 1995-10-11 形成光致抗蚀图形的方法 Expired - Fee Related CN1074550C (zh)

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DE19537716A1 (de) 1996-04-18
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GB9520610D0 (en) 1995-12-13
KR960015075A (ko) 1996-05-22

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