JP2009537991A - ケイ素含有組成物を有する発光デバイスの製造方法 - Google Patents

ケイ素含有組成物を有する発光デバイスの製造方法 Download PDF

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Publication number
JP2009537991A
JP2009537991A JP2009511138A JP2009511138A JP2009537991A JP 2009537991 A JP2009537991 A JP 2009537991A JP 2009511138 A JP2009511138 A JP 2009511138A JP 2009511138 A JP2009511138 A JP 2009511138A JP 2009537991 A JP2009537991 A JP 2009537991A
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Prior art keywords
optical element
light emitting
silicon
film
emitting diode
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JP2009511138A
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Japanese (ja)
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JP2009537991A5 (enExample
Inventor
キャサリン・エイ・レザーデイル
スコット・ディ・トンプソン
ラリー・ディ・ボードマン
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication of JP2009537991A5 publication Critical patent/JP2009537991A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins

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  • Compositions Of Macromolecular Compounds (AREA)
  • Led Device Packages (AREA)
JP2009511138A 2006-05-17 2007-04-24 ケイ素含有組成物を有する発光デバイスの製造方法 Pending JP2009537991A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/383,916 US20070269586A1 (en) 2006-05-17 2006-05-17 Method of making light emitting device with silicon-containing composition
PCT/US2007/067266 WO2007136956A1 (en) 2006-05-17 2007-04-24 Method of making light emitting device with silicon-containing composition

Publications (2)

Publication Number Publication Date
JP2009537991A true JP2009537991A (ja) 2009-10-29
JP2009537991A5 JP2009537991A5 (enExample) 2010-06-17

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JP2009511138A Pending JP2009537991A (ja) 2006-05-17 2007-04-24 ケイ素含有組成物を有する発光デバイスの製造方法

Country Status (7)

Country Link
US (1) US20070269586A1 (enExample)
EP (1) EP2030256A1 (enExample)
JP (1) JP2009537991A (enExample)
KR (1) KR20090008338A (enExample)
CN (1) CN101443926B (enExample)
TW (1) TW200802991A (enExample)
WO (1) WO2007136956A1 (enExample)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011525298A (ja) * 2008-05-07 2011-09-15 スリーエム イノベイティブ プロパティズ カンパニー ケイ素含有光重合可能組成物による光学結合
JP2012023039A (ja) * 2010-07-16 2012-02-02 Samsung Mobile Display Co Ltd 有機発光素子
JP2012049508A (ja) * 2010-07-27 2012-03-08 Nitto Denko Corp 発光ダイオード装置の製造方法
CN102468407A (zh) * 2010-11-17 2012-05-23 青岛杰生电气有限公司 一种紫外发光二极管
JP2013540872A (ja) * 2010-10-29 2013-11-07 ワッカー ケミー アクチエンゲゼルシャフト 光架橋性の非常に透明なシリコーン混合物
JP2014216642A (ja) * 2013-08-20 2014-11-17 Ｅ＆Ｅ Ｊａｐａｎ株式会社 チップｌｅｄ
JP2014216329A (ja) * 2013-04-22 2014-11-17 Ｅ＆Ｅ Ｊａｐａｎ株式会社 チップｌｅｄの製造方法
WO2015056483A1 (ja) * 2013-10-18 2015-04-23 信越化学工業株式会社 紫外線硬化性オルガノポリシロキサン組成物及び版材の製造方法
US9018663B2 (en) 2011-04-28 2015-04-28 Asahi Rubber Inc. Lens-equipped optical semiconductor device and method for manufacturing the same
JP2016063177A (ja) * 2014-09-22 2016-04-25 トヨタ紡織株式会社 複合膜、及びその製造方法
JP2021015910A (ja) * 2019-07-12 2021-02-12 Ｄｏｗａエレクトロニクス株式会社 発光素子ランプ及びその製造方法

Families Citing this family (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7915085B2 (en) 2003-09-18 2011-03-29 Cree, Inc. Molded chip fabrication method
US7821023B2 (en) 2005-01-10 2010-10-26 Cree, Inc. Solid state lighting component
US9793247B2 (en) 2005-01-10 2017-10-17 Cree, Inc. Solid state lighting component
US9070850B2 (en) 2007-10-31 2015-06-30 Cree, Inc. Light emitting diode package and method for fabricating same
US8669572B2 (en) 2005-06-10 2014-03-11 Cree, Inc. Power lamp package
US7675145B2 (en) 2006-03-28 2010-03-09 Cree Hong Kong Limited Apparatus, system and method for use in mounting electronic elements
US8748915B2 (en) 2006-04-24 2014-06-10 Cree Hong Kong Limited Emitter package with angled or vertical LED
US11210971B2 (en) 2009-07-06 2021-12-28 Cree Huizhou Solid State Lighting Company Limited Light emitting diode display with tilted peak emission pattern
US7635915B2 (en) 2006-04-26 2009-12-22 Cree Hong Kong Limited Apparatus and method for use in mounting electronic elements
US7655486B2 (en) * 2006-05-17 2010-02-02 3M Innovative Properties Company Method of making light emitting device with multilayer silicon-containing encapsulant
US8735920B2 (en) 2006-07-31 2014-05-27 Cree, Inc. Light emitting diode package with optical element
US8367945B2 (en) * 2006-08-16 2013-02-05 Cree Huizhou Opto Limited Apparatus, system and method for use in mounting electronic elements
US8092735B2 (en) 2006-08-17 2012-01-10 3M Innovative Properties Company Method of making a light emitting device having a molded encapsulant
CN101126491B (zh) * 2006-08-18 2011-03-23 鸿富锦精密工业（深圳）有限公司 发光二极管模组
US8425271B2 (en) * 2006-09-01 2013-04-23 Cree, Inc. Phosphor position in light emitting diodes
TW200822403A (en) * 2006-10-12 2008-05-16 Matsushita Electric Industrial Co Ltd Light-emitting device and method for manufacturing the same
US9159888B2 (en) 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9024349B2 (en) 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9711703B2 (en) 2007-02-12 2017-07-18 Cree Huizhou Opto Limited Apparatus, system and method for use in mounting electronic elements
US20090023234A1 (en) * 2007-07-17 2009-01-22 Hung-Tsung Hsu Method for manufacturing light emitting diode package
US20090065792A1 (en) 2007-09-07 2009-03-12 3M Innovative Properties Company Method of making an led device having a dome lens
US7960192B2 (en) * 2007-09-14 2011-06-14 3M Innovative Properties Company Light emitting device having silicon-containing composition and method of making same
USD615504S1 (en) 2007-10-31 2010-05-11 Cree, Inc. Emitter package
US8866169B2 (en) 2007-10-31 2014-10-21 Cree, Inc. LED package with increased feature sizes
US10256385B2 (en) 2007-10-31 2019-04-09 Cree, Inc. Light emitting die (LED) packages and related methods
US9041285B2 (en) 2007-12-14 2015-05-26 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
USD633631S1 (en) 2007-12-14 2011-03-01 Cree Hong Kong Limited Light source of light emitting diode
US8167674B2 (en) * 2007-12-14 2012-05-01 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
USD634863S1 (en) 2008-01-10 2011-03-22 Cree Hong Kong Limited Light source of light emitting diode
US8878219B2 (en) 2008-01-11 2014-11-04 Cree, Inc. Flip-chip phosphor coating method and devices fabricated utilizing method
US8049230B2 (en) 2008-05-16 2011-11-01 Cree Huizhou Opto Limited Apparatus and system for miniature surface mount devices
BRPI0913195A2 (pt) * 2008-05-30 2016-01-12 Sharp Kk dispostivo emissor de luz, fonte de luz de superfície, dispositivo de vídeo de cristal líquido e método para a fabricação de dispositivo emissor de luz
JP5342830B2 (ja) * 2008-08-19 2013-11-13 モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 光硬化性オルガノポリシロキサン組成物
US9425172B2 (en) 2008-10-24 2016-08-23 Cree, Inc. Light emitter array
US8791471B2 (en) 2008-11-07 2014-07-29 Cree Hong Kong Limited Multi-chip light emitting diode modules
US8368112B2 (en) 2009-01-14 2013-02-05 Cree Huizhou Opto Limited Aligned multiple emitter package
KR101064005B1 (ko) * 2009-03-02 2011-09-08 엘지이노텍 주식회사 발광 장치 및 그 제조방법
WO2010140693A1 (ja) * 2009-06-04 2010-12-09 三洋電機株式会社 電子部品
US8415692B2 (en) 2009-07-06 2013-04-09 Cree, Inc. LED packages with scattering particle regions
DE102009027486A1 (de) * 2009-07-06 2011-01-13 Wacker Chemie Ag Verfahren zur Herstellung von Siliconbeschichtungen und Siliconformkörpern aus durch Licht vernetzbaren Siliconmischungen
DE102009034370A1 (de) * 2009-07-23 2011-01-27 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil und Verfahren zur Herstellung eines optischen Elements für ein optoelektronisches Bauteil
US8598809B2 (en) 2009-08-19 2013-12-03 Cree, Inc. White light color changing solid state lighting and methods
US8350370B2 (en) 2010-01-29 2013-01-08 Cree Huizhou Opto Limited Wide angle oval light emitting diode package
TWI509838B (zh) * 2010-04-14 2015-11-21 黃邦明 具氟化聚合物之表面塗層的發光二極體外殼及其發光二極體結構
US10546846B2 (en) 2010-07-23 2020-01-28 Cree, Inc. Light transmission control for masking appearance of solid state light sources
USD680504S1 (en) 2010-07-30 2013-04-23 Nichia Corporation Light emitting diode
US8455882B2 (en) 2010-10-15 2013-06-04 Cree, Inc. High efficiency LEDs
FR2969311B1 (fr) * 2010-12-20 2013-01-18 Rhodia Acetow Gmbh Module de source lumineuse a led (diode electroluminescente)
US9166126B2 (en) 2011-01-31 2015-10-20 Cree, Inc. Conformally coated light emitting devices and methods for providing the same
KR101220909B1 (ko) * 2011-06-01 2013-01-11 주식회사 아모럭스 형광등형 엘이디 조명등
JP5864367B2 (ja) * 2011-06-16 2016-02-17 日東電工株式会社 蛍光接着シート、蛍光体層付発光ダイオード素子、発光ダイオード装置およびそれらの製造方法
US8564004B2 (en) 2011-11-29 2013-10-22 Cree, Inc. Complex primary optics with intermediate elements
CN103378276B (zh) * 2012-04-19 2016-02-03 展晶科技(深圳)有限公司 发光二极管及其光分配结构
KR101299529B1 (ko) 2012-08-06 2013-08-23 (주)애니캐스팅 발광다이오드용 렌즈, 이를 구비하는 백라이트유닛 및 표시장치
TW201408926A (zh) * 2012-08-24 2014-03-01 Lsq Green Energy Co Ltd 發光二極體燈具及其電路板加工方法
KR102059032B1 (ko) * 2013-01-07 2020-02-11 엘지이노텍 주식회사 발광 소자 패키지
CN104078553A (zh) * 2013-03-28 2014-10-01 新世纪光电股份有限公司 波长转换结构及其制作方法
DE102013212372A1 (de) * 2013-06-27 2014-12-31 Robert Bosch Gmbh Optische Baueinheit
CN104251417A (zh) * 2013-06-28 2014-12-31 展晶科技(深圳)有限公司 光源模组
TWI557370B (zh) * 2013-09-03 2016-11-11 Light emitting device
CN103672609A (zh) * 2013-12-02 2014-03-26 深圳市华星光电技术有限公司 使用量子点的发光源及其制作方法与应用
US9601670B2 (en) 2014-07-11 2017-03-21 Cree, Inc. Method to form primary optic with variable shapes and/or geometries without a substrate
US10622522B2 (en) 2014-09-05 2020-04-14 Theodore Lowes LED packages with chips having insulated surfaces
TW201628218A (zh) * 2015-01-26 2016-08-01 艾笛森光電股份有限公司 磷光片與具有磷光片的發光裝置
DE102015106865A1 (de) * 2015-05-04 2016-11-10 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines Konverterbauteils
CN104950518A (zh) * 2015-07-21 2015-09-30 京东方科技集团股份有限公司 量子点膜、量子点膜的制备方法及背光模组
TW201729901A (zh) 2015-12-02 2017-09-01 奈米系統股份有限公司 於顯示裝置中基於量子點之色轉換層
US9938457B1 (en) 2016-09-20 2018-04-10 General Electric Company Methods for fabricating devices containing red line emitting phosphors
CN108574034A (zh) * 2017-03-10 2018-09-25 光宝电子(广州)有限公司 发光装置
US10347806B2 (en) * 2017-04-12 2019-07-09 Luminus, Inc. Packaged UV-LED device with anodic bonded silica lens and no UV-degradable adhesive

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03195033A (ja) * 1989-12-25 1991-08-26 Fuji Electric Co Ltd 半導体装置の製造方法
JPH0629577A (ja) * 1992-07-10 1994-02-04 Sumitomo Electric Ind Ltd 半導体発光素子の製造方法
WO2004024823A1 (en) * 2002-09-12 2004-03-25 3M Innovative Properties Company Photocured silicone sealant having improved adhesion to plastic
JP2004146554A (ja) * 2002-10-24 2004-05-20 Asahi Rubber:Kk 半導体光学素子部品のはんだ付け方法及び半導体光学素子部品
JP2004221308A (ja) * 2003-01-15 2004-08-05 Shin Etsu Chem Co Ltd 発光ダイオード素子用シリコーン樹脂組成物
JP2005020464A (ja) * 2003-06-26 2005-01-20 Kyocera Corp 光半導体装置およびその製造方法
JP2005042099A (ja) * 2003-07-09 2005-02-17 Shin Etsu Chem Co Ltd シリコーンゴム組成物並びに発光半導体被覆保護材及び発光半導体装置
JP2005105217A (ja) * 2003-10-01 2005-04-21 Dow Corning Toray Silicone Co Ltd 硬化性オルガノポリシロキサン組成物および半導体装置
JP2005327777A (ja) * 2004-05-12 2005-11-24 Shin Etsu Chem Co Ltd 発光ダイオード用シリコーン樹脂組成物

Family Cites Families (96)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE553159A (enExample) * 1955-12-05
US3220972A (en) * 1962-07-02 1965-11-30 Gen Electric Organosilicon process using a chloroplatinic acid reaction product as the catalyst
US3159662A (en) * 1962-07-02 1964-12-01 Gen Electric Addition reaction
NL131800C (enExample) * 1965-05-17
US3410886A (en) * 1965-10-23 1968-11-12 Union Carbide Corp Si-h to c=c or c=c addition in the presence of a nitrile-platinum (ii) halide complex
NL129346C (enExample) * 1966-06-23
US3814730A (en) * 1970-08-06 1974-06-04 Gen Electric Platinum complexes of unsaturated siloxanes and platinum containing organopolysiloxanes
US3715334A (en) * 1970-11-27 1973-02-06 Gen Electric Platinum-vinylsiloxanes
US3933880A (en) * 1974-12-02 1976-01-20 Dow Corning Corporation Method of preparing a platinum catalyst inhibitor
US3989667A (en) * 1974-12-02 1976-11-02 Dow Corning Corporation Olefinic siloxanes as platinum inhibitors
US3989666A (en) * 1974-12-02 1976-11-02 Dow Corning Corporation Crosslinker-platinum catalyst-inhibitor and method of preparation thereof
US4256870A (en) * 1979-05-17 1981-03-17 General Electric Company Solventless release compositions, methods and articles of manufacture
US4435259A (en) * 1981-02-02 1984-03-06 Pitney Bowes Inc. Radiation curable composition of vinyl polysiloxane and hydrogen polysiloxane with photosensitizer
US4347346A (en) * 1981-04-02 1982-08-31 General Electric Company Silicone release coatings and inhibitors
US4501637A (en) * 1981-06-12 1985-02-26 Motorola, Inc. LED having self-aligned lens
US4421903A (en) * 1982-02-26 1983-12-20 General Electric Company Platinum complex catalysts
US4530879A (en) * 1983-03-04 1985-07-23 Minnesota Mining And Manufacturing Company Radiation activated addition reaction
USRE33289E (en) * 1983-07-07 1990-08-07 General Electric Company Transparent membrane structures
US4647331A (en) * 1983-07-29 1987-03-03 Motorola, Inc. Method for assembling an electro-optical device
US4504645A (en) * 1983-09-23 1985-03-12 Minnesota Mining And Manufacturing Company Latently-curable organosilicone release coating composition
US4510094A (en) * 1983-12-06 1985-04-09 Minnesota Mining And Manufacturing Company Platinum complex
US4600484A (en) * 1983-12-06 1986-07-15 Minnesota Mining And Manufacturing Company Hydrosilation process using a (η5 -cyclopentadienyl)tri(σ-aliphatic) platinum complex as the catalyst
US4587137A (en) * 1984-09-28 1986-05-06 General Electric Company Novel dual cure silicone compositions
US4585669A (en) * 1984-09-28 1986-04-29 General Electric Company Novel dual cure silicone compositions
US4613215A (en) * 1984-10-09 1986-09-23 Orion Industries, Inc. Mounting bracket for rear view mirror with spring detent
DE3532821A1 (de) * 1985-09-13 1987-03-26 Siemens Ag Leuchtdiode (led) mit sphaerischer linse
US4609574A (en) * 1985-10-03 1986-09-02 Dow Corning Corporation Silicone release coatings containing higher alkenyl functional siloxanes
US4705765A (en) * 1985-12-19 1987-11-10 General Electric Company Hydrosilylation catalyst, method for making and use
US4670531A (en) * 1986-01-21 1987-06-02 General Electric Company Inhibited precious metal catalyzed organopolysiloxane compositions
US4774111A (en) * 1987-06-29 1988-09-27 Dow Corning Corporation Heat-curable silicone compositions comprising fumarate cure-control additive and use thereof
US5145886A (en) * 1988-05-19 1992-09-08 Minnesota Mining And Manufacturing Company Radiation activated hydrosilation reaction
US4916169A (en) * 1988-09-09 1990-04-10 Minnesota Mining And Manufacturing Company Visible radiation activated hydrosilation reaction
US5063102A (en) * 1989-12-01 1991-11-05 Dow Corning Corporation Radiation curable organosiloxane gel compositions
US5310581A (en) * 1989-12-29 1994-05-10 The Dow Chemical Company Photocurable compositions
US6376569B1 (en) * 1990-12-13 2002-04-23 3M Innovative Properties Company Hydrosilation reaction utilizing a (cyclopentadiene)(sigma-aliphatic) platinum complex and a free radical photoinitiator
US6046250A (en) * 1990-12-13 2000-04-04 3M Innovative Properties Company Hydrosilation reaction utilizing a free radical photoinitiator
US5122943A (en) * 1991-04-15 1992-06-16 Miles Inc. Encapsulated light emitting diode and method for encapsulation
US5213864A (en) * 1991-12-05 1993-05-25 At&T Bell Laboratories Silicone encapsulant
US5313365A (en) * 1992-06-30 1994-05-17 Motorola, Inc. Encapsulated electronic package
DE4242469A1 (de) * 1992-12-16 1994-06-23 Wacker Chemie Gmbh Katalysatoren für Hydrosilylierungsreaktionen
US5328974A (en) * 1993-05-06 1994-07-12 Wacker Silicones Corporation Platinum catalyst and a curable organopolysiloxane composition containing said platinum catalyst
US5639845A (en) * 1993-06-10 1997-06-17 Shin-Etsu Chemical Co., Ltd. Method for the preparation of a fluorine-containing organopolysiloxane
TW262537B (enExample) * 1993-07-01 1995-11-11 Allied Signal Inc
DE4423195A1 (de) * 1994-07-01 1996-01-04 Wacker Chemie Gmbh Triazenoxid-Übergangsmetall-Komplexe als Hydrosilylierungskatalysatoren
US6099783A (en) * 1995-06-06 2000-08-08 Board Of Trustees Operating Michigan State University Photopolymerizable compositions for encapsulating microelectronic devices
US6600175B1 (en) * 1996-03-26 2003-07-29 Advanced Technology Materials, Inc. Solid state white light emitter and display using same
US5777433A (en) * 1996-07-11 1998-07-07 Hewlett-Packard Company High refractive index package material and a light emitting device encapsulated with such material
JP3417230B2 (ja) * 1996-09-25 2003-06-16 信越化学工業株式会社 型取り母型用光硬化性液状シリコーンゴム組成物
US5895228A (en) * 1996-11-14 1999-04-20 International Business Machines Corporation Encapsulation of organic light emitting devices using Siloxane or Siloxane derivatives
US6274890B1 (en) * 1997-01-15 2001-08-14 Kabushiki Kaisha Toshiba Semiconductor light emitting device and its manufacturing method
JP2000511711A (ja) * 1997-03-18 2000-09-05 オブシェストボ エス オグラノチェノイ オトヴェツトヴェノスチウ（コルヴェト ライツ） 発光ダイオード
US6319425B1 (en) * 1997-07-07 2001-11-20 Asahi Rubber Inc. Transparent coating member for light-emitting diodes and a fluorescent color light source
US6274924B1 (en) * 1998-11-05 2001-08-14 Lumileds Lighting, U.S. Llc Surface mountable LED package
US6150546A (en) * 1999-05-03 2000-11-21 General Electric Company Irradiation-curable silicone compositions, photo-active platinum (IV) compounds, and method
JP3503131B2 (ja) * 1999-06-03 2004-03-02 サンケン電気株式会社 半導体発光装置
US6664318B1 (en) * 1999-12-20 2003-12-16 3M Innovative Properties Company Encapsulant compositions with thermal shock resistance
CN1189330C (zh) * 2000-06-01 2005-02-16 希毕克斯幻像有限公司 含热显影光敏微胶囊的成像介质
JP4239439B2 (ja) * 2000-07-06 2009-03-18 セイコーエプソン株式会社 光学装置およびその製造方法ならびに光伝送装置
US7064355B2 (en) * 2000-09-12 2006-06-20 Lumileds Lighting U.S., Llc Light emitting diodes with improved light extraction efficiency
US6987613B2 (en) * 2001-03-30 2006-01-17 Lumileds Lighting U.S., Llc Forming an optical element on the surface of a light emitting device for improved light extraction
US6598998B2 (en) * 2001-05-04 2003-07-29 Lumileds Lighting, U.S., Llc Side emitting light emitting device
JP2003234509A (ja) * 2002-02-08 2003-08-22 Citizen Electronics Co Ltd 発光ダイオード
DE10213294B4 (de) * 2002-03-25 2015-05-13 Osram Gmbh Verwendung eines UV-beständigen Polymers in der Optoelektronik sowie im Außenanwendungsbereich, UV-beständiges Polymer sowie optisches Bauelement
CA2483510A1 (en) * 2002-04-26 2003-11-06 Kaneka Corporation Hardenable composition, hardening product, process for producing the same and light emitting diode sealed with the hardening product
US6679621B2 (en) * 2002-06-24 2004-01-20 Lumileds Lighting U.S., Llc Side emitting LED and lens
US7146106B2 (en) * 2002-08-23 2006-12-05 Amkor Technology, Inc. Optic semiconductor module and manufacturing method
US7264378B2 (en) * 2002-09-04 2007-09-04 Cree, Inc. Power surface mount light emitting die package
KR20040021951A (ko) * 2002-09-06 2004-03-11 럭스피아 주식회사 백색 발광다이오드
JP2004186168A (ja) * 2002-11-29 2004-07-02 Shin Etsu Chem Co Ltd 発光ダイオード素子用シリコーン樹脂組成物
JP4429917B2 (ja) * 2002-12-26 2010-03-10 株式会社半導体エネルギー研究所 発光装置、表示装置及び電子機器
US7245072B2 (en) * 2003-01-27 2007-07-17 3M Innovative Properties Company Phosphor based light sources having a polymeric long pass reflector
US7157839B2 (en) * 2003-01-27 2007-01-02 3M Innovative Properties Company Phosphor based light sources utilizing total internal reflection
US6806658B2 (en) * 2003-03-07 2004-10-19 Agilent Technologies, Inc. Method for making an LED
TW200427111A (en) * 2003-03-12 2004-12-01 Shinetsu Chemical Co Material for coating/protecting light-emitting semiconductor and the light-emitting semiconductor device
EP1620903B1 (en) * 2003-04-30 2017-08-16 Cree, Inc. High-power solid state light emitter package
US6921929B2 (en) * 2003-06-27 2005-07-26 Lockheed Martin Corporation Light-emitting diode (LED) with amorphous fluoropolymer encapsulant and lens
TW200509329A (en) * 2003-08-26 2005-03-01 Yung-Shu Yang LED package material and process
JP2005120228A (ja) * 2003-10-16 2005-05-12 Nitto Denko Corp 光半導体素子封止用エポキシ樹脂組成物およびそれを用いた光半導体装置
JP4503271B2 (ja) * 2003-11-28 2010-07-14 東レ・ダウコーニング株式会社 シリコーン積層体の製造方法
US7279346B2 (en) * 2004-03-31 2007-10-09 Cree, Inc. Method for packaging a light emitting device by one dispense then cure step followed by another
JP4300418B2 (ja) * 2004-04-30 2009-07-22 信越化学工業株式会社 エポキシ・シリコーン混成樹脂組成物及び発光半導体装置
US7119018B2 (en) * 2004-07-09 2006-10-10 International Buisness Machines Corporation Copper conductor
US20060035092A1 (en) * 2004-08-10 2006-02-16 Shin-Etsu Chemical Co., Ltd. Resin composition for sealing LED elements and cured product generated by curing the composition
US7304425B2 (en) * 2004-10-29 2007-12-04 3M Innovative Properties Company High brightness LED package with compound optical element(s)
US7419839B2 (en) * 2004-11-12 2008-09-02 Philips Lumileds Lighting Company, Llc Bonding an optical element to a light emitting device
US7452737B2 (en) * 2004-11-15 2008-11-18 Philips Lumileds Lighting Company, Llc Molded lens over LED die
US7344902B2 (en) * 2004-11-15 2008-03-18 Philips Lumileds Lighting Company, Llc Overmolded lens over LED die
US7314770B2 (en) * 2004-11-18 2008-01-01 3M Innovative Properties Company Method of making light emitting device with silicon-containing encapsulant
US7192795B2 (en) * 2004-11-18 2007-03-20 3M Innovative Properties Company Method of making light emitting device with silicon-containing encapsulant
US20060138443A1 (en) * 2004-12-23 2006-06-29 Iii-N Technology, Inc. Encapsulation and packaging of ultraviolet and deep-ultraviolet light emitting diodes
US20060186428A1 (en) * 2005-02-23 2006-08-24 Tan Kheng L Light emitting device with enhanced encapsulant adhesion using siloxane material and method for fabricating the device
JP4876426B2 (ja) * 2005-04-08 2012-02-15 日亜化学工業株式会社 耐熱性及び耐光性に優れる発光装置
US20070092736A1 (en) * 2005-10-21 2007-04-26 3M Innovative Properties Company Method of making light emitting device with silicon-containing encapsulant
US20070092737A1 (en) * 2005-10-21 2007-04-26 3M Innovative Properties Company Method of making light emitting device with silicon-containing encapsulant
WO2007050484A1 (en) * 2005-10-24 2007-05-03 3M Innovative Properties Company Method of making light emitting device having a molded encapsulant
US7595515B2 (en) * 2005-10-24 2009-09-29 3M Innovative Properties Company Method of making light emitting device having a molded encapsulant

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03195033A (ja) * 1989-12-25 1991-08-26 Fuji Electric Co Ltd 半導体装置の製造方法
JPH0629577A (ja) * 1992-07-10 1994-02-04 Sumitomo Electric Ind Ltd 半導体発光素子の製造方法
WO2004024823A1 (en) * 2002-09-12 2004-03-25 3M Innovative Properties Company Photocured silicone sealant having improved adhesion to plastic
JP2004146554A (ja) * 2002-10-24 2004-05-20 Asahi Rubber:Kk 半導体光学素子部品のはんだ付け方法及び半導体光学素子部品
JP2004221308A (ja) * 2003-01-15 2004-08-05 Shin Etsu Chem Co Ltd 発光ダイオード素子用シリコーン樹脂組成物
JP2005020464A (ja) * 2003-06-26 2005-01-20 Kyocera Corp 光半導体装置およびその製造方法
JP2005042099A (ja) * 2003-07-09 2005-02-17 Shin Etsu Chem Co Ltd シリコーンゴム組成物並びに発光半導体被覆保護材及び発光半導体装置
JP2005105217A (ja) * 2003-10-01 2005-04-21 Dow Corning Toray Silicone Co Ltd 硬化性オルガノポリシロキサン組成物および半導体装置
JP2005327777A (ja) * 2004-05-12 2005-11-24 Shin Etsu Chem Co Ltd 発光ダイオード用シリコーン樹脂組成物

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011525298A (ja) * 2008-05-07 2011-09-15 スリーエム イノベイティブ プロパティズ カンパニー ケイ素含有光重合可能組成物による光学結合
JP2012023039A (ja) * 2010-07-16 2012-02-02 Samsung Mobile Display Co Ltd 有機発光素子
JP2012049508A (ja) * 2010-07-27 2012-03-08 Nitto Denko Corp 発光ダイオード装置の製造方法
US8940851B2 (en) 2010-10-29 2015-01-27 Wacker Chemie Ag Highly transparent silicone mixtures that can be cross-linked by light
JP2013540872A (ja) * 2010-10-29 2013-11-07 ワッカー ケミー アクチエンゲゼルシャフト 光架橋性の非常に透明なシリコーン混合物
CN102468407A (zh) * 2010-11-17 2012-05-23 青岛杰生电气有限公司 一种紫外发光二极管
US9018663B2 (en) 2011-04-28 2015-04-28 Asahi Rubber Inc. Lens-equipped optical semiconductor device and method for manufacturing the same
KR101561754B1 (ko) * 2011-04-28 2015-10-19 가부시키가이샤 아사히 러버 렌즈 부착 광반도체 장치 및 그 제조방법
JP2014216329A (ja) * 2013-04-22 2014-11-17 Ｅ＆Ｅ Ｊａｐａｎ株式会社 チップｌｅｄの製造方法
JP2014216642A (ja) * 2013-08-20 2014-11-17 Ｅ＆Ｅ Ｊａｐａｎ株式会社 チップｌｅｄ
WO2015056483A1 (ja) * 2013-10-18 2015-04-23 信越化学工業株式会社 紫外線硬化性オルガノポリシロキサン組成物及び版材の製造方法
US9714344B2 (en) 2013-10-18 2017-07-25 Shin-Etsu Chemical Co., Ltd. Ultraviolet-ray-curable organopolysiloxane composition, and method for producing printing material
JP2016063177A (ja) * 2014-09-22 2016-04-25 トヨタ紡織株式会社 複合膜、及びその製造方法
JP2021015910A (ja) * 2019-07-12 2021-02-12 Ｄｏｗａエレクトロニクス株式会社 発光素子ランプ及びその製造方法
JP7165629B2 (ja) 2019-07-12 2022-11-04 Ｄｏｗａエレクトロニクス株式会社 発光素子ランプ及びその製造方法

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