JP2009537991A5 - - Google Patents

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Publication number
JP2009537991A5
JP2009537991A5 JP2009511138A JP2009511138A JP2009537991A5 JP 2009537991 A5 JP2009537991 A5 JP 2009537991A5 JP 2009511138 A JP2009511138 A JP 2009511138A JP 2009511138 A JP2009511138 A JP 2009511138A JP 2009537991 A5 JP2009537991 A5 JP 2009537991A5
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JP
Japan
Prior art keywords
light emitting
optical element
emitting diode
attaching
silicon
Prior art date
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Pending
Application number
JP2009511138A
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English (en)
Japanese (ja)
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JP2009537991A (ja
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Publication date
Priority claimed from US11/383,916 external-priority patent/US20070269586A1/en
Application filed filed Critical
Publication of JP2009537991A publication Critical patent/JP2009537991A/ja
Publication of JP2009537991A5 publication Critical patent/JP2009537991A5/ja
Pending legal-status Critical Current

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JP2009511138A 2006-05-17 2007-04-24 ケイ素含有組成物を有する発光デバイスの製造方法 Pending JP2009537991A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/383,916 US20070269586A1 (en) 2006-05-17 2006-05-17 Method of making light emitting device with silicon-containing composition
PCT/US2007/067266 WO2007136956A1 (en) 2006-05-17 2007-04-24 Method of making light emitting device with silicon-containing composition

Publications (2)

Publication Number Publication Date
JP2009537991A JP2009537991A (ja) 2009-10-29
JP2009537991A5 true JP2009537991A5 (enExample) 2010-06-17

Family

ID=38712284

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009511138A Pending JP2009537991A (ja) 2006-05-17 2007-04-24 ケイ素含有組成物を有する発光デバイスの製造方法

Country Status (7)

Country Link
US (1) US20070269586A1 (enExample)
EP (1) EP2030256A1 (enExample)
JP (1) JP2009537991A (enExample)
KR (1) KR20090008338A (enExample)
CN (1) CN101443926B (enExample)
TW (1) TW200802991A (enExample)
WO (1) WO2007136956A1 (enExample)

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