TWI509838B - 具氟化聚合物之表面塗層的發光二極體外殼及其發光二極體結構 - Google Patents
具氟化聚合物之表面塗層的發光二極體外殼及其發光二極體結構 Download PDFInfo
- Publication number
- TWI509838B TWI509838B TW099111570A TW99111570A TWI509838B TW I509838 B TWI509838 B TW I509838B TW 099111570 A TW099111570 A TW 099111570A TW 99111570 A TW99111570 A TW 99111570A TW I509838 B TWI509838 B TW I509838B
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- emitting diode
- surface coating
- fluorinated polymer
- housing
- Prior art date
Links
- 229920002313 fluoropolymer Polymers 0.000 title claims description 41
- 239000004811 fluoropolymer Substances 0.000 title description 3
- 239000002345 surface coating layer Substances 0.000 title 1
- 238000000576 coating method Methods 0.000 claims description 45
- 239000011248 coating agent Substances 0.000 claims description 43
- 239000004815 dispersion polymer Substances 0.000 claims description 19
- 239000000945 filler Substances 0.000 claims description 10
- 229920006351 engineering plastic Polymers 0.000 claims description 8
- 229920001577 copolymer Polymers 0.000 claims description 7
- XUCNUKMRBVNAPB-UHFFFAOYSA-N fluoroethene Chemical compound FC=C XUCNUKMRBVNAPB-UHFFFAOYSA-N 0.000 claims description 6
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- 229920001519 homopolymer Polymers 0.000 claims description 5
- 229920001774 Perfluoroether Polymers 0.000 claims description 4
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 4
- 229920006120 non-fluorinated polymer Polymers 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 239000006185 dispersion Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 7
- 239000000178 monomer Substances 0.000 description 6
- -1 polyphenylene hydrazine Polymers 0.000 description 5
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 4
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 3
- 239000005977 Ethylene Substances 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 229920000106 Liquid crystal polymer Polymers 0.000 description 3
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- HCDGVLDPFQMKDK-UHFFFAOYSA-N hexafluoropropylene Chemical group FC(F)=C(F)C(F)(F)F HCDGVLDPFQMKDK-UHFFFAOYSA-N 0.000 description 3
- 239000004408 titanium dioxide Substances 0.000 description 3
- UZKWTJUDCOPSNM-UHFFFAOYSA-N 1-ethenoxybutane Chemical compound CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 2
- QMIWYOZFFSLIAK-UHFFFAOYSA-N 3,3,3-trifluoro-2-(trifluoromethyl)prop-1-ene Chemical group FC(F)(F)C(=C)C(F)(F)F QMIWYOZFFSLIAK-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- UUAGAQFQZIEFAH-UHFFFAOYSA-N chlorotrifluoroethylene Chemical group FC(F)=C(F)Cl UUAGAQFQZIEFAH-UHFFFAOYSA-N 0.000 description 2
- FJKIXWOMBXYWOQ-UHFFFAOYSA-N ethenoxyethane Chemical compound CCOC=C FJKIXWOMBXYWOQ-UHFFFAOYSA-N 0.000 description 2
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 description 2
- 238000005470 impregnation Methods 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- GWTYBAOENKSFAY-UHFFFAOYSA-N 1,1,1,2,2-pentafluoro-2-(1,2,2-trifluoroethenoxy)ethane Chemical compound FC(F)=C(F)OC(F)(F)C(F)(F)F GWTYBAOENKSFAY-UHFFFAOYSA-N 0.000 description 1
- OVGRCEFMXPHEBL-UHFFFAOYSA-N 1-ethenoxypropane Chemical compound CCCOC=C OVGRCEFMXPHEBL-UHFFFAOYSA-N 0.000 description 1
- 229920001780 ECTFE Polymers 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- QHSJIZLJUFMIFP-UHFFFAOYSA-N ethene;1,1,2,2-tetrafluoroethene Chemical group C=C.FC(F)=C(F)F QHSJIZLJUFMIFP-UHFFFAOYSA-N 0.000 description 1
- HQQADJVZYDDRJT-UHFFFAOYSA-N ethene;prop-1-ene Chemical group C=C.CC=C HQQADJVZYDDRJT-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- XJRBAMWJDBPFIM-UHFFFAOYSA-N methyl vinyl ether Chemical compound COC=C XJRBAMWJDBPFIM-UHFFFAOYSA-N 0.000 description 1
- 239000004005 microsphere Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 description 1
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
本發明係有關一種發光二極體結構,特別是具氟化聚合物之表面塗層的發光二極體外殼及其發光二極體結構。
提昇光提取效率一直是發光二極體發展的重要課題。一個光提取效率難以提昇的原因在於,發光二極體晶片本身與週邊元件之介面的內部反射或折射導致晶片發出的光反而被週邊元件所吸收。為了解決此問題,通常會使用含有二氧化鈦的外殼來包覆發光二極體。二氧化鈦可以提昇可見光的反射率。一般此類外殼是以聚苯肼(polyphenylhydrazine,PPA)工程塑膠製成。然而,這樣的作法缺點在於二氧化鈦會逐漸使聚苯肼之外殼的顏色由白轉黃,因此光提取效率也會隨之逐漸下降。
習知技術提供另一種解決方法如於美國專利公開號US 20100032702中所述,以含氟的工程塑膠取代聚苯肼。此專利之技術在於,將氟化聚合物利用射出成型塑造成發光二極體整體外殼。此技術固然可以解決聚苯肼之黃化的問題,但由於氟化聚合物價格十分昂貴,所以以其製作發光二極體整體外殼將使成本大增,很難普遍地實施於各種發光二極體元件上。
有鑑於上述之習知問題,本發明於一實施例係提供一種新穎且創新的發光二極體結構,其包含具有氟化聚合物表面塗層的發光二極體外殼。氟化聚合物表面塗層覆蓋非氟聚合物之工程塑膠所製成的殼體。依據此實施例,形成氟化聚合物表面塗層係藉由將氟化聚合物分散液塗佈在殼體上。因此,於此所使用的氟化聚合物相較於習知之整體射出成型技術將節省許多。而且,依據此實施例,在市場上已廣為使用的其他非氟聚合物之工程塑膠殼體仍可持續被利用,具有避免資源浪費的優點。
依據本發明之一實施例,氟化聚合物表面塗層的色澤穩定,可反射可見光,而且具有耐焊性可承受260℃至280℃的焊接製程長達3分鐘以上。
依據本發明之一實施例,殼體可為聚苯肼PPA工程塑膠製成。依據本發明之一實施例,殼體可為液晶高分子工程塑膠製成。
依據本發明之一實施例,殼體可更包含一凹槽用以放置發光二極體晶片,表面塗層係只覆蓋凹槽之表面。
依據本發明之一實施例,氟化聚合物分散液包含氟化聚合物,該氟化聚合物包含氟化乙烯(vinyl floride,VF)之均聚合物、全氟烷氧基碳氟化合物(perfluoroalkoxy fluorocarbon resin,PFA)之共聚合物或偏二氟乙烯(vinylidene fluoride,VDF)之均聚合物。
依據本發明之一實施例,氟化聚合物分散液包含可發散可見光的填充料。
依據本發明之一實施例,氟化聚合物分散液包含可調整該表面塗層之模數的填充料。
依據本發明之一實施例,氟化聚合物分散液包含一發光(luminescent)化合物。
本發明尚包含其他實施例與其他方面以解決其他問題,其合併上述之各方面詳細揭露於以下實施方式中。
以下將參考所附圖式示範本發明之較佳實施例。所附圖式中相似元件係採用相同的元件符號。應注意為清楚呈現本發明,所附圖式中之各元件並非按照實物之比例繪製,而且為避免模糊本發明之內容,以下說明亦省略習知之零組件、相關材料、及其相關處理技術。
依據本發明之實施例,發光二極體晶片之外殼可具多種功能。它可為LED晶片封裝體的承載器,提供LED晶片LED晶片封裝體合適的位置與配向,藉此電連接到電路板上。封裝體內可含螢光體(phosphors)。舉例而言,藍光LED晶片可搭配綠螢光體及紅螢光體用以產生白光。此外,發光二極體晶片之外殼也可反射光線以增加LED裝置整體亮度。
圖1A至圖1D顯示本發明具有凹槽之發光二極體晶片之外殼的各個實施例。如圖1A所示,用以承載發光二極體晶片之外殼100包含一金屬架101及一殼體102連接金屬架101。金屬架101可選擇性地穿透殼體102中,如圖中之虛線所示。金屬架101以可導電的金屬製成。殼體102以非氟化聚合物製成,譬如是聚苯肼(PPA),液晶高分子(LCP)或其他合適之工程塑膠,射出成形而成。殼體102形成凹槽103作為LED晶片承載的位置。一個凹槽103可放置一個或多個LED晶片。凹槽103可使光線沿符合期待的角度反射,其深度、壁面的傾斜角度、大小等可交由設計者來決定。
同樣參考圖1A,外殼100更包含一表面塗層104覆蓋殼體102之表面的至少一部分。表面塗層104係以一氟化聚合物分散液製成,用以反射置於殼體102上之一發光二極體晶片所發出的光。圖1A所示之表面塗層104覆蓋殼體102於金屬架101以上的表面。表面塗層104更包含一延伸部104a覆蓋金屬架101之一端。圖1B係依據另一實施例顯示發光二極體晶片之外殼110,其與圖1A之差別在於表面塗層114只覆蓋凹槽103的表面。圖1C係依據另一實施例顯示發光二極體晶片之外殼120,其與與圖1B之差別在於表面塗層124除覆蓋凹槽103的表面也覆蓋殼體102之頂表面102a的一部分,然於金屬架101以上有一部份之殼體102係露出並未被表面塗層124所覆蓋。圖1D係依據另一實施例顯示發光二極體晶片之外殼130,其與圖1A之差別在於表面塗層134覆蓋殼體102之整體表面。
圖1A至圖1D舉例說明本發明之實施例中表面塗層的各種變化,其與各表面塗層的形成製程有關。可在金屬架及殼體製作完成後,利用合適的塗佈技術,例如濺鍍、噴塗或含浸,透過合適的遮罩或於塗佈之後使用蝕刻方式去除多餘的塗層來完成本發明之各種態樣之表面塗層。圖2為無凹槽之平面式發光二極體晶片之外殼200,其包含金屬架101,殼體202及表面塗層204覆蓋殼體202之金屬架101以上的整體表面。本發明之實施例不限於上述,熟此技藝者應可瞭解本發明之表面塗層包含可反射置於該殼體上之發光二極體晶片所發出的光的各種實施例。
如上述,表面塗層係以一氟化聚合物分散液製成。依據本發明之一實施例,氟化聚合物表面塗層的色澤穩定,可反射可見光,而且具有耐焊性可承受260℃至280℃的焊接製程長達3分鐘以上。依據本發明之一實施例,氟化聚合物表面塗層在380nm至780nm波長範圍的光反射性(photopic reflectance)係至少約為80%。
氟化聚合物分散液包含氟化聚合物及其他合適的填料,其中氟化聚合物的含量約是氟化聚合物分散液之總重量的30wt%至90wt%,填料的含量約是氟化聚合物分散液之總重量的10% wt%至70wt%。氟化聚合物分散液具有可實施塗佈製程以使其沉積在殼體上的特性,塗佈製程可以藉由噴塗,含浸或其他各種合適技術。
氟化聚合物分散液中的氟化聚合物包含各種分子量的聚合物,聚合物之單體可具有2個至8個碳。氟化聚合物可為單一單體組成之均聚合物或多種單體組成之共聚物,或含上述兩者之各種組合。單體可含氟或不含氟。舉例而言,不含氟單體可為乙烯或丙烯;含氟單體可為四氟乙烯(tetrafluoroethylene,TFE),氟化乙烯(vinyl floride,VF),偏二氟乙烯(vinylidene fluoride,VDF,六氟異丁烯(hexafluoroisobutylene,HFIB),六氟丙烯(hexafluoropropylene,HFP)或全氟烷基乙烯基醚(perfluoro(alkyl vinyl ether,PAVE),然不限於此。PAVE之全氟烷基包含1至5個碳原子,其可為線性或是有分支的結構,例如全氟甲基乙烯基醚(perfluoro(methyl vinyl ether),PMVE),全氟乙基乙烯基醚(perfluoro(ethyl vinyl ether),PEVE),全氟丙基乙烯基醚(perfluoro(propyl vinyl ether),PPVE),及全氟丁基乙烯基醚(perfluoro(butyl vinyl ether,PBVE)。以實例說明本發明之各種氟化聚合物,其可選自下列各項及其各種組合,但不僅限於此:TFE及HFP之共聚物,稱為聚全氟乙丙烯(perfluorinated ethylene-propylene,FEP);TFE及PAVE的共聚物,稱為全氟烷氧基碳氟化合物(perfluoroalkoxy fluorocarbon resin,PFA);VDF之均聚合物,稱為PVDF;乙烯及TFE的共聚物,稱為乙烯-四氟乙烯共聚物(ethylene tetrafluoroethylene,ETFE);VF之均聚合物,稱為PVF;三氟氯乙烯(chlorotrifluoroethylene)之均聚合物,稱為PCTFE;三氟氯乙烯及乙烯的共聚物,稱為ECTFE。
依據本發明之一實施例,氟化聚合物分散液包含可發散可見光的填充料。發散可見光的粒子種類很多,舉例而言,可為金屬鹽類、金屬氫氧化物或金屬氧化物,或是白色顏料,例如二氧化鈦。於一實施例,發散可見光的粒子的含量約是氟化聚合物分散液之總重量的20wt%至60wt%。
依據本發明之一實施例,氟化聚合物分散液包含可調整該表面塗層之模數的填充料。詳言之,調整該表面塗層之模數(modulus)可以藉由合適填充料調整線性熱膨賬係數,熱導係數,合適填充料可以為玻璃纖維或中空玻璃微球體(hollow glass microspheres)
依據本發明之一實施例,氟化聚合物分散液包含一發光(luminescent)化合物。發光化合物可使表面塗層將欲反射的光線轉成符合期待之顏色的功能。舉例而言,可將欲反射的藍光轉成綠光或紅光,或將UV光轉成藍光、綠光或紅光。發光化合物可為磷光化合物(phosphorescent)或是螢光化合物(fluorescent)等等。
圖3係依據本發明之一實施例,例示包含外殼100及發光二極體晶片301之發光二極體結構300。如圖所示,外殼100即為圖1A所示之外殼。外殼100包含凹槽103,其上方承載為封裝體303所包覆的LED晶片301。LED晶片301可為任何合適的LED晶片,如發光範圍在UV光到紅外光的LED晶片。發光二極體結構300以圖1A所示之外殼100為例,但不以此為限。發光二極體結構可放置LED晶片於本發明之各種實施例之外殼的上方。
以上所述僅為本發明之較佳實施例而已,並非用以限定本發明之申請專利範圍;凡其它未脫離本發明所揭示之精神下所完成之等效改變或修飾,均應包含在下述之申請專利範圍內。
100...外殼
101...金屬架
102...殼體
103...凹槽
104...表面塗層
104a...延伸部
110...外殼
114...表面塗層
120...外殼
124...表面塗層
102a...頂表面
130...外殼
134...表面塗層
200...外殼
202...殼體
204...表面塗層
300...發光二極體結構
301...發光二極體晶片
303...封裝體
圖1A至圖1D係依據本發明之實施例顯示具有凹槽之各種發光二極體之外殼的剖面圖。
圖2係依據本發明之實施例顯示不具凹槽之發光二極體之外殼的剖面圖。
圖3係依據本發明之實施例,顯示包含圖1A之外殼的發光二極體結構剖面圖。
100...外殼
101...金屬架
102...殼體
103...凹槽
104...表面塗層
104a...延伸部
300...發光二極體結構
301...發光二極體晶片
303...封裝體
Claims (9)
- 一種用以承載發光二極體晶片之外殼,包含:一殼體,以非氟化聚合物製成;及一表面塗層覆蓋該殼體之至少一部分,該表面塗層係以一氟化聚合物分散液製成,該表面塗層用以反射置於該殼體上之一發光二極體晶片所發出的光。
- 如請求項1所述之用以承載發光二極體晶片之外殼,其中該殼體為PPA工程塑膠製成。
- 如請求項1所述之用以承載發光二極體晶片之外殼,其中該殼體更包含一凹槽用以放置該發光二極體晶片,該表面塗層係只覆蓋該凹槽之表面。
- 如請求項1所述之用以承載發光二極體晶片之外殼,其中該氟化聚合物分散液包含氟化聚合物,該氟化聚合物包含氟化乙烯(vinyl floride)之均聚合物、全氟烷基乙烯基醚(perfluoroalkoxy fluorocarbon resin)之共聚合物或偏二氟乙烯(vinylidene fluoride)之均聚合物。
- 如請求項1所述之用以承載發光二極體晶片之外殼,其中該氟化聚合物分散液包含可發散可見光的填充料。
- 如請求項1所述之用以承載發光二極體晶片之外殼,其中該氟化聚合物分散液包含可調整該表面塗層之模數的填充料。
- 如請求項1所述之用以承載發光二極體晶片之外殼,其中該氟化聚合物分散液包含一發光(luminescent)化合物。
- 一種用以承載發光二極體晶片之外殼,包含:一殼體,以非氟化聚合物製成;及一表面塗層覆蓋該殼體之表面,該表面塗層係以一氟化聚合物分散液製成,該表面塗層用以反射置於該殼體上之一發光二極體晶片所發出的光,其中該表面塗層具有一部分係位於該發光二極體晶片下方且介於該殼體及該發光二極體晶片之間。
- 一種發光二極體結構,包含:如請求項1至8中任一項所述之外殼;及該發光二極體晶片。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW099111570A TWI509838B (zh) | 2010-04-14 | 2010-04-14 | 具氟化聚合物之表面塗層的發光二極體外殼及其發光二極體結構 |
JP2011088955A JP5346351B2 (ja) | 2010-04-14 | 2011-04-13 | フッ素化ポリマーの表面塗膜を備えた発光ダイオードの筐体及びその発光ダイオード構造 |
US13/086,739 US9000463B2 (en) | 2010-04-14 | 2011-04-14 | LED housing with fluoropolymer surface coating layer and LED structure having the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW099111570A TWI509838B (zh) | 2010-04-14 | 2010-04-14 | 具氟化聚合物之表面塗層的發光二極體外殼及其發光二極體結構 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201135981A TW201135981A (en) | 2011-10-16 |
TWI509838B true TWI509838B (zh) | 2015-11-21 |
Family
ID=44787590
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW099111570A TWI509838B (zh) | 2010-04-14 | 2010-04-14 | 具氟化聚合物之表面塗層的發光二極體外殼及其發光二極體結構 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9000463B2 (zh) |
JP (1) | JP5346351B2 (zh) |
TW (1) | TWI509838B (zh) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070269586A1 (en) * | 2006-05-17 | 2007-11-22 | 3M Innovative Properties Company | Method of making light emitting device with silicon-containing composition |
US20080054287A1 (en) * | 2006-08-31 | 2008-03-06 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005019488A (ja) * | 2003-06-24 | 2005-01-20 | Citizen Electronics Co Ltd | 光伝送モジュール |
JP4981042B2 (ja) * | 2005-06-30 | 2012-07-18 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 黄緑色を放出するルミネッセント材料を含む照明系 |
JP2007242820A (ja) * | 2006-03-08 | 2007-09-20 | Asahi Kasei Corp | 発光デバイス及び発光デバイスモジュール |
JP2009051876A (ja) * | 2007-08-23 | 2009-03-12 | Three M Innovative Properties Co | コーティング組成物及びそれを使用した物品 |
US20100032702A1 (en) * | 2008-08-11 | 2010-02-11 | E. I. Du Pont De Nemours And Company | Light-Emitting Diode Housing Comprising Fluoropolymer |
WO2010035788A1 (ja) * | 2008-09-25 | 2010-04-01 | デンカAgsp株式会社 | 発光素子搭載用基板及びその製造方法 |
JP2010177443A (ja) * | 2009-01-29 | 2010-08-12 | Showa Denko Kk | 発光装置及び発光モジュール |
US8901583B2 (en) * | 2010-04-12 | 2014-12-02 | Cree Huizhou Opto Limited | Surface mount device thin package |
CN102244178A (zh) * | 2010-05-14 | 2011-11-16 | 展晶科技(深圳)有限公司 | 发光二极管的封装结构 |
-
2010
- 2010-04-14 TW TW099111570A patent/TWI509838B/zh active
-
2011
- 2011-04-13 JP JP2011088955A patent/JP5346351B2/ja active Active
- 2011-04-14 US US13/086,739 patent/US9000463B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070269586A1 (en) * | 2006-05-17 | 2007-11-22 | 3M Innovative Properties Company | Method of making light emitting device with silicon-containing composition |
US20080054287A1 (en) * | 2006-08-31 | 2008-03-06 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
Also Published As
Publication number | Publication date |
---|---|
JP2011228705A (ja) | 2011-11-10 |
US20110254038A1 (en) | 2011-10-20 |
TW201135981A (en) | 2011-10-16 |
US9000463B2 (en) | 2015-04-07 |
JP5346351B2 (ja) | 2013-11-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9548429B2 (en) | Packaging for ultraviolet optoelectronic device | |
EP2481546A1 (en) | Mold release film, and method for manufacturing light emitting diode | |
US9343505B2 (en) | Wafer level reflector for LED packaging | |
TW200412675A (en) | Semiconductor light emitting device with fluoropolymer lens | |
US20130026526A1 (en) | Light-emitting diode housing comprising fluoropolymer | |
US10147854B2 (en) | Packaging for ultraviolet optoelectronic device | |
CN110915006A (zh) | 一种紫外光源封装元件 | |
US10886426B2 (en) | Method for producing an electronic device and electronic device | |
US20160064631A1 (en) | Packaging for Ultraviolet Optoelectronic Device | |
CN113506846B (zh) | 一种紫外led封装结构 | |
Lin et al. | Enhancement of InGaN–GaN Indium–Tin–Oxide Flip-Chip Light-Emitting Diodes With TiO $ _2 $–SiO $ _2 $ Multilayer Stack Omnidirectional Reflector | |
US12002908B2 (en) | Light-emitting packaging device | |
TWI509838B (zh) | 具氟化聚合物之表面塗層的發光二極體外殼及其發光二極體結構 | |
JP2001102639A (ja) | フッ素系ポリマーを用いて封止した発光ダイオードおよびレーザーダイオード装置 | |
TW201336111A (zh) | 發光二極體外殼的表面處理方法 | |
KR102590826B1 (ko) | Uv 엘이디 패키지 | |
JP2016152309A (ja) | 発光ダイオード、及び、その製造方法 | |
CN102222751A (zh) | 用以承载发光二极管晶片的外壳及其发光二极管结构 | |
KR102598500B1 (ko) | 발광소자 패키지 | |
JP7301866B2 (ja) | 発光装置の構成部品のためのフルオロポリマー組成物 | |
KR102126949B1 (ko) | 봉지재 조성물, 봉지재, 그 제조방법 및 전자 소자 패키지 | |
TW201935713A (zh) | 紫外線發光裝置、紫外線發光裝置之製造方法及紫外線發光模組之製造方法 | |
KR101115460B1 (ko) | 엘이디 패키지 | |
JP2021119597A (ja) | 電子部品 | |
TWM393074U (en) | Electronic device having protection structure |