JP2009533867A - 撮像装置上に保護カバーを据え付ける方法及び該方法により製造される装置 - Google Patents
撮像装置上に保護カバーを据え付ける方法及び該方法により製造される装置 Download PDFInfo
- Publication number
- JP2009533867A JP2009533867A JP2009505406A JP2009505406A JP2009533867A JP 2009533867 A JP2009533867 A JP 2009533867A JP 2009505406 A JP2009505406 A JP 2009505406A JP 2009505406 A JP2009505406 A JP 2009505406A JP 2009533867 A JP2009533867 A JP 2009533867A
- Authority
- JP
- Japan
- Prior art keywords
- camera module
- manufacturing
- transparent substrate
- protective cover
- module according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/57—Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/60—Control of cameras or camera modules
- H04N23/63—Control of cameras or camera modules by using electronic viewfinders
- H04N23/631—Graphical user interfaces [GUI] specially adapted for controlling image capture or setting capture parameters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/804—Containers or encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Human Computer Interaction (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/402,196 US20070236591A1 (en) | 2006-04-11 | 2006-04-11 | Method for mounting protective covers over image capture devices and devices manufactured thereby |
| PCT/US2007/008668 WO2007120587A2 (en) | 2006-04-11 | 2007-04-09 | Method for mounting protective covers on image capture devices and devices manufactured thereby |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009533867A true JP2009533867A (ja) | 2009-09-17 |
| JP2009533867A5 JP2009533867A5 (enExample) | 2010-05-27 |
Family
ID=38574804
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009505406A Pending JP2009533867A (ja) | 2006-04-11 | 2007-04-09 | 撮像装置上に保護カバーを据え付ける方法及び該方法により製造される装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US20070236591A1 (enExample) |
| EP (2) | EP2014086B1 (enExample) |
| JP (1) | JP2009533867A (enExample) |
| CA (1) | CA2649157A1 (enExample) |
| WO (1) | WO2007120587A2 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8456560B2 (en) | 2007-01-26 | 2013-06-04 | Digitaloptics Corporation | Wafer level camera module and method of manufacture |
| CA2685080A1 (en) | 2007-04-24 | 2008-11-06 | Flextronics Ap Llc | Small form factor modules using wafer level optics with bottom cavity and flip-chip assembly |
| US9118825B2 (en) * | 2008-02-22 | 2015-08-25 | Nan Chang O-Film Optoelectronics Technology Ltd. | Attachment of wafer level optics |
| US9419032B2 (en) * | 2009-08-14 | 2016-08-16 | Nanchang O-Film Optoelectronics Technology Ltd | Wafer level camera module with molded housing and method of manufacturing |
| JP6584886B2 (ja) * | 2015-09-14 | 2019-10-02 | 株式会社ディスコ | 分割方法 |
| CN106210704B (zh) * | 2016-09-13 | 2018-03-30 | 北京清影机器视觉技术有限公司 | 一种基于工业数字相机矩阵的图像获取装置 |
| US11049898B2 (en) | 2017-04-01 | 2021-06-29 | Ningbo Sunny Opotech Co., Ltd. | Systems and methods for manufacturing semiconductor modules |
| US11094727B2 (en) | 2017-04-12 | 2021-08-17 | Ningbo Sunny Opotech Co., Ltd. | Camera module, molding photosensitive assembly thereof, manufacturing method thereof and electronic device |
| DE102017216573A1 (de) * | 2017-09-19 | 2019-03-21 | Robert Bosch Gmbh | Verfahren zum Herstellen einer Kamera und Kamera |
| US10852482B1 (en) * | 2019-05-31 | 2020-12-01 | Alliance Fiber Optic Products, Inc. | Precision TFF POSA and WDM systems using parallel fiber interface devices |
Citations (4)
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| JP2005056999A (ja) * | 2003-08-01 | 2005-03-03 | Fuji Photo Film Co Ltd | 固体撮像装置およびその製造方法 |
| JP2006295481A (ja) * | 2005-04-08 | 2006-10-26 | Matsushita Electric Ind Co Ltd | 半導体撮像装置およびその製造方法 |
| JP2007042879A (ja) * | 2005-08-03 | 2007-02-15 | Matsushita Electric Ind Co Ltd | 半導体撮像装置およびその製造方法 |
| JP2007053337A (ja) * | 2005-07-21 | 2007-03-01 | Matsushita Electric Ind Co Ltd | 光学デバイス、光学デバイス装置、カメラモジュールおよび光学デバイスの製造方法 |
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| US4345021A (en) * | 1979-09-25 | 1982-08-17 | Matsushita Electric Industrial Co., Ltd. | Solid-state image pickup element and process for fabricating the same |
| US6235141B1 (en) * | 1996-09-27 | 2001-05-22 | Digital Optics Corporation | Method of mass producing and packaging integrated optical subsystems |
| US5912872A (en) * | 1996-09-27 | 1999-06-15 | Digital Optics Corporation | Integrated optical apparatus providing separated beams on a detector and associated methods |
| US6096155A (en) * | 1996-09-27 | 2000-08-01 | Digital Optics Corporation | Method of dicing wafer level integrated multiple optical elements |
| US6669803B1 (en) * | 1997-10-03 | 2003-12-30 | Digital Optics Corp. | Simultaneous provision of controlled height bonding material at a wafer level and associated structures |
| US6624505B2 (en) * | 1998-02-06 | 2003-09-23 | Shellcase, Ltd. | Packaged integrated circuits and methods of producing thereof |
| DE69908325T2 (de) * | 1998-03-26 | 2004-04-01 | Digital Optics Corp. | Integrierte mikrooptische systeme |
| US6426829B1 (en) * | 1998-03-26 | 2002-07-30 | Digital Optics Corp. | Integrated micro-optical systems |
| JP4274602B2 (ja) * | 1998-09-11 | 2009-06-10 | オリンパス株式会社 | 対物光学系 |
| CN1497326A (zh) * | 1999-03-19 | 2004-05-19 | ��ʿ��Ƭ��ʽ���� | 防水型带镜头摄影胶片单元及其组装方法 |
| US6566745B1 (en) * | 1999-03-29 | 2003-05-20 | Imec Vzw | Image sensor ball grid array package and the fabrication thereof |
| US6324010B1 (en) * | 1999-07-19 | 2001-11-27 | Eastman Kodak Company | Optical assembly and a method for manufacturing lens systems |
| US6168965B1 (en) * | 1999-08-12 | 2001-01-02 | Tower Semiconductor Ltd. | Method for making backside illuminated image sensor |
| US6374004B1 (en) * | 1999-10-14 | 2002-04-16 | Digital Optics Corporation | Optical subassembly |
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| JP3540281B2 (ja) * | 2001-02-02 | 2004-07-07 | シャープ株式会社 | 撮像装置 |
| US6798931B2 (en) * | 2001-03-06 | 2004-09-28 | Digital Optics Corp. | Separating of optical integrated modules and structures formed thereby |
| JP4266106B2 (ja) * | 2001-09-27 | 2009-05-20 | 株式会社東芝 | 粘着性テープの剥離装置、粘着性テープの剥離方法、半導体チップのピックアップ装置、半導体チップのピックアップ方法及び半導体装置の製造方法 |
| US7074638B2 (en) * | 2002-04-22 | 2006-07-11 | Fuji Photo Film Co., Ltd. | Solid-state imaging device and method of manufacturing said solid-state imaging device |
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| US8456560B2 (en) * | 2007-01-26 | 2013-06-04 | Digitaloptics Corporation | Wafer level camera module and method of manufacture |
-
2006
- 2006-04-11 US US11/402,196 patent/US20070236591A1/en not_active Abandoned
-
2007
- 2007-04-09 EP EP07755070A patent/EP2014086B1/en not_active Not-in-force
- 2007-04-09 JP JP2009505406A patent/JP2009533867A/ja active Pending
- 2007-04-09 WO PCT/US2007/008668 patent/WO2007120587A2/en not_active Ceased
- 2007-04-09 CA CA002649157A patent/CA2649157A1/en not_active Abandoned
- 2007-04-09 EP EP11161782.5A patent/EP2337333B1/en not_active Not-in-force
-
2013
- 2013-08-14 US US13/967,112 patent/US20140047711A1/en not_active Abandoned
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005056999A (ja) * | 2003-08-01 | 2005-03-03 | Fuji Photo Film Co Ltd | 固体撮像装置およびその製造方法 |
| JP2006295481A (ja) * | 2005-04-08 | 2006-10-26 | Matsushita Electric Ind Co Ltd | 半導体撮像装置およびその製造方法 |
| JP2007053337A (ja) * | 2005-07-21 | 2007-03-01 | Matsushita Electric Ind Co Ltd | 光学デバイス、光学デバイス装置、カメラモジュールおよび光学デバイスの製造方法 |
| JP2007042879A (ja) * | 2005-08-03 | 2007-02-15 | Matsushita Electric Ind Co Ltd | 半導体撮像装置およびその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20140047711A1 (en) | 2014-02-20 |
| EP2014086A2 (en) | 2009-01-14 |
| EP2014086A4 (en) | 2010-10-13 |
| CA2649157A1 (en) | 2007-10-25 |
| EP2337333B1 (en) | 2014-03-19 |
| US20070236591A1 (en) | 2007-10-11 |
| EP2337333A2 (en) | 2011-06-22 |
| WO2007120587A3 (en) | 2009-01-08 |
| EP2337333A3 (en) | 2012-03-14 |
| EP2014086B1 (en) | 2012-05-16 |
| WO2007120587A2 (en) | 2007-10-25 |
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