JP2009529802A - リソグラフィシステムおよび投影方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000001459 lithography Methods 0.000 title claims abstract description 29
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- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
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- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
- G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/302—Controlling tubes by external information, e.g. programme control
- H01J37/3023—Programme control
- H01J37/3026—Patterning strategy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31761—Patterning strategy
- H01J2237/31764—Dividing into sub-patterns
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31761—Patterning strategy
- H01J2237/31766—Continuous moving of wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31769—Proximity effect correction
- H01J2237/31771—Proximity effect correction using multiple exposure
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67282—Marking devices
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Abstract
Description
Claims (13)
- 白黒の書き込み方式、即ち1つの格子セルへの書き込みまたは非書き込みを使用し、複数の格子セルを有する格子の上でパターンを分割することによって、ウェハのようなターゲット面上に前記パターンを発生させるためのプローブ形成リソグラフィシステムであって、前記パターンは、1つの前記格子セルのフィーチャよりも大きなサイズの複数のフィーチャを有し、前記格子セルの各々において、前記プローブは、オンまたはオフに切り替えられ、
前記ターゲット上のプローブは、1つの前記格子セルよりも十分に大きな表面積を覆っており、また、前記白黒の書き込みの位置依存分布が、1つのフィーチャ内で、前記プローブのサイズの範囲内に与えられるシステム。 - 前記位置依存分布は、前記ターゲット上に書き込まれる1つのフィーチャの縁の近くに与えられる請求項1のシステム。
- 位置依存配置が、前記ターゲット上の1つのフィーチャの縁のサブピクセルの配置を果すように与えられる請求項1のシステム。
- 1つのフィーチャの縁の位置決めが、この縁に平行に配置され、かつこの縁から所定の距離の所に配置された複数の前記格子セルの線の非書き込み部分によって果される請求項1のシステム。
- 複数の前記格子セルの前記線が、前記縁に平行に配置されることによって、付加的な複数のピクセルが、1つのフィーチャの外側で、このフィーチャの縁に隣接し、複数のピクセルのアレイの少なくとも1つの線に書き込まれる請求項1のシステム。
- 少なくとも1組のセルが、前記線に付加的に書き込まれる請求項1ないし5のシステム。
- 全体のドーズの調節が、規則的なパターンで前記プローブの書き込みのオンとオフとを切り替えることによって、前記フィーチャに果される請求項1のシステム。
- 前記フィーチャの複数の前記縁は、特に近接効果を回避するために移動される請求項1ないし7のいずれか1のシステム。
- 書き込みビームのオン/オフの切り替えが、前記ピクセルの速度よりも遅い請求項1のシステム。
- 1つのフィーチャの有効な縁の位置が、前記縁から前記プローブのサイズの範囲内で、1つまたは1組のピクセルの非書き込みによって制御される請求項1のシステム。
- 前記プローブのサイズが、前記アドレスの格子サイズの5ないし20倍の範囲内の値である請求項1のシステム。
- オンおよびオフの書き込み方式、即ち1つの格子セルへの書き込みまたは非書き込みを使用し、複数の前記格子セルを有する格子の上でパターンを分割することによって、ウェハのようなターゲット面上に前記パターンを投影するためのプローブ形成リソグラフィシステムを動作させる方法であって、前記格子セルの各々において、前記プローブは、オンまたはオフに切り替えられ、
前記ターゲット上のプローブは、1つの前記格子セルよりも十分に大きな表面積を覆っており、また、黒白の書き込みの位置依存分布が、1つのフィーチャ内で、前記プローブのサイズの範囲内に与えられる方法。 - パターンがウェハのようなターゲット面上に投影されるリソグラフィシステムを動作させる方法であって、プローブ形成ビームの形態で、大規模な非常に多くの書き込みビームの使用に関連し、前記システムの荷電粒子ビームのコラム部分に発生され、また、前記パターンを書き込むための前記ターゲット面上で走査され、
前記ビームは、前記コラム内に、書き込みビームの各々をブランキングすることによって、前記コラム内で変調され、
前記パターンの書き込みは、前記コラムに対する前記ターゲットの機械的な移動に対して横方向に、書き込みビームの各々を走査することによって果され、
システムのパターンの複数のフィーチャは、前記プローブのサイズよりもかなり小さな寸法のセルに分割された仮想格子を使用して、前記ターゲット上に配置され、
1つのフィーチャの縁が、このフィーチャを書き込むための少なくとも最後の走査の線に、少なくとも1組の格子セルの非書き込みによって、前記格子サイズから実質的に独立して配置されており、
セットが、複数の前記格子セルの数よりも多く、かつ前記プローブの寸法の書き込みのために、特に、前記プローブの半分のサイズの書き込みのために必要な複数の前記格子セルの数よりも少ない方法。
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US78104006P | 2006-03-10 | 2006-03-10 | |
US60/781,040 | 2006-03-10 | ||
PCT/NL2007/000065 WO2007105939A1 (en) | 2006-03-10 | 2007-03-09 | Lithography system and projection method |
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JP2009529802A true JP2009529802A (ja) | 2009-08-20 |
JP2009529802A5 JP2009529802A5 (ja) | 2013-11-07 |
JP5528796B2 JP5528796B2 (ja) | 2014-06-25 |
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US (2) | US7842936B2 (ja) |
EP (2) | EP1994447B1 (ja) |
JP (1) | JP5528796B2 (ja) |
KR (1) | KR101444958B1 (ja) |
CN (1) | CN101427184B (ja) |
TW (1) | TWI432908B (ja) |
WO (1) | WO2007105939A1 (ja) |
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JP2012527764A (ja) * | 2009-05-20 | 2012-11-08 | マッパー・リソグラフィー・アイピー・ビー.ブイ. | リソグラフ処理のための2レベルパターンを発生する方法およびその方法を使用するパターン発生器 |
JP2013165121A (ja) * | 2012-02-09 | 2013-08-22 | Canon Inc | 描画装置、生成方法、プログラム及び物品の製造方法 |
KR20160029699A (ko) * | 2014-09-05 | 2016-03-15 | 아이엠에스 나노패브릭케이션 아게 | 다중 빔 라이터의 단거리 변위의 보정 |
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KR102380475B1 (ko) * | 2014-09-05 | 2022-03-31 | 아이엠에스 나노패브릭케이션 게엠베하 | 다중 빔 라이터의 단거리 변위의 보정 |
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WO2018061960A1 (ja) * | 2016-09-29 | 2018-04-05 | 大日本印刷株式会社 | マルチビーム電子線描画装置における露光強度分布を求める方法および装置 |
JP2018061013A (ja) * | 2016-09-29 | 2018-04-12 | 大日本印刷株式会社 | マルチビーム電子線描画装置における露光強度分布を求める方法および装置 |
Also Published As
Publication number | Publication date |
---|---|
CN101427184A (zh) | 2009-05-06 |
US7842936B2 (en) | 2010-11-30 |
TWI432908B (zh) | 2014-04-01 |
EP1994447B1 (en) | 2012-12-26 |
CN101427184B (zh) | 2013-07-17 |
EP2323158A3 (en) | 2012-01-04 |
EP1994447A1 (en) | 2008-11-26 |
US20080073588A1 (en) | 2008-03-27 |
JP5528796B2 (ja) | 2014-06-25 |
EP2323158A2 (en) | 2011-05-18 |
WO2007105939A1 (en) | 2007-09-20 |
TW200741364A (en) | 2007-11-01 |
USRE45552E1 (en) | 2015-06-09 |
KR20080113400A (ko) | 2008-12-30 |
KR101444958B1 (ko) | 2014-11-03 |
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