JPS5710236A - Pattern drawing device - Google Patents

Pattern drawing device

Info

Publication number
JPS5710236A
JPS5710236A JP8490380A JP8490380A JPS5710236A JP S5710236 A JPS5710236 A JP S5710236A JP 8490380 A JP8490380 A JP 8490380A JP 8490380 A JP8490380 A JP 8490380A JP S5710236 A JPS5710236 A JP S5710236A
Authority
JP
Japan
Prior art keywords
pattern
diameter
information
drawn
accuracy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8490380A
Other languages
Japanese (ja)
Other versions
JPS6331098B2 (en
Inventor
Sadao Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8490380A priority Critical patent/JPS5710236A/en
Publication of JPS5710236A publication Critical patent/JPS5710236A/en
Publication of JPS6331098B2 publication Critical patent/JPS6331098B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Abstract

PURPOSE:To increase the accuracy of a pattern drawing device without reducing the size of a beam by dividing and storing pattern information into regions smaller than the size of the beam and shifting the deflection and the scan of the beam in a small amount in the region of the prescribed shape of the pattern in accordance with the information. CONSTITUTION:Pattern information to be drawn is stored as dot information such as 1/2 of the diameter of the beam, for example, smaller than the diameter of an spotlike beam in a raster scan type device. This information is read by every two lines (e.g., a set of 2n-1 and 2n) corresponding to the diameter of the beam in its scanning direction, and the feature of the pattern shape (e.g., its end or oblique part or the like) is detected. The beam is shifted by 1/2 of the diameter of the beam at the starting or finishing end of the scanning in blanking or deflection crossing perpendicularly to the scanning direction in response to the detected feature is drawn as an increment. Thus, the pattern of high accuracy similar in accuracy to the pattern drawn by the beam of 1/2 in diameter can be, for example, drawn, and the exposure time can not be increased.
JP8490380A 1980-06-23 1980-06-23 Pattern drawing device Granted JPS5710236A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8490380A JPS5710236A (en) 1980-06-23 1980-06-23 Pattern drawing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8490380A JPS5710236A (en) 1980-06-23 1980-06-23 Pattern drawing device

Publications (2)

Publication Number Publication Date
JPS5710236A true JPS5710236A (en) 1982-01-19
JPS6331098B2 JPS6331098B2 (en) 1988-06-22

Family

ID=13843687

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8490380A Granted JPS5710236A (en) 1980-06-23 1980-06-23 Pattern drawing device

Country Status (1)

Country Link
JP (1) JPS5710236A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59208719A (en) * 1983-05-05 1984-11-27 エテック・システムズ・インコーポレイテッド Method of producing integrated circuit in particle beam device
JPS622590A (en) * 1985-06-27 1987-01-08 東芝機械株式会社 Laser drawing apparatus
EP0653103A1 (en) * 1993-05-28 1995-05-17 Etec Systems, Inc. Dose modulation and pixel deflection for raster scan lithography
WO2007105939A1 (en) * 2006-03-10 2007-09-20 Mapper Lithography Ip B.V. Lithography system and projection method
JP2008158118A (en) * 2006-12-22 2008-07-10 Dainippon Printing Co Ltd Drawing method and rectangular region dividing method in electron beam drawing
DE102012010707A1 (en) * 2012-05-30 2013-12-05 Carl Zeiss Microscopy Gmbh METHOD AND DEVICE FOR ABRASING A SURFACE OF A SUBJECT WITH A PARTICLE BEAM

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59208719A (en) * 1983-05-05 1984-11-27 エテック・システムズ・インコーポレイテッド Method of producing integrated circuit in particle beam device
JPH0582730B2 (en) * 1983-05-05 1993-11-22 Etetsuku Shisutemuzu Inc
JPS622590A (en) * 1985-06-27 1987-01-08 東芝機械株式会社 Laser drawing apparatus
EP0653103A1 (en) * 1993-05-28 1995-05-17 Etec Systems, Inc. Dose modulation and pixel deflection for raster scan lithography
EP0653103A4 (en) * 1993-05-28 1998-12-16 Etec Systems Inc Dose modulation and pixel deflection for raster scan lithography.
EP2323158A3 (en) * 2006-03-10 2012-01-04 Mapper Lithography IP B.V. Lithography system and projection method
CN101427184A (en) * 2006-03-10 2009-05-06 迈普尔平版印刷Ip有限公司 Lithography system and projection method
JP2009529802A (en) * 2006-03-10 2009-08-20 マッパー・リソグラフィー・アイピー・ビー．ブイ． Lithography system and projection method
WO2007105939A1 (en) * 2006-03-10 2007-09-20 Mapper Lithography Ip B.V. Lithography system and projection method
USRE45552E1 (en) 2006-03-10 2015-06-09 Mapper Lithography Ip B.V. Lithography system and projection method
JP2008158118A (en) * 2006-12-22 2008-07-10 Dainippon Printing Co Ltd Drawing method and rectangular region dividing method in electron beam drawing
DE102012010707A1 (en) * 2012-05-30 2013-12-05 Carl Zeiss Microscopy Gmbh METHOD AND DEVICE FOR ABRASING A SURFACE OF A SUBJECT WITH A PARTICLE BEAM
US9136090B2 (en) 2012-05-30 2015-09-15 Carl Zeiss Microscopy Gmbh Method and apparatus for scanning a surface of an object using a particle beam

Also Published As

Publication number Publication date
JPS6331098B2 (en) 1988-06-22

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