JP2009517541A5 - - Google Patents

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Publication number
JP2009517541A5
JP2009517541A5 JP2008541731A JP2008541731A JP2009517541A5 JP 2009517541 A5 JP2009517541 A5 JP 2009517541A5 JP 2008541731 A JP2008541731 A JP 2008541731A JP 2008541731 A JP2008541731 A JP 2008541731A JP 2009517541 A5 JP2009517541 A5 JP 2009517541A5
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Japan
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gas
floor
process chamber
inlet part
gas inlet
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JP2008541731A
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English (en)
Japanese (ja)
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JP2009517541A (ja
JP5148501B2 (ja
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Priority claimed from DE102005056320A external-priority patent/DE102005056320A1/de
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Publication of JP2009517541A5 publication Critical patent/JP2009517541A5/ja
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JP2008541731A 2005-11-25 2006-11-21 ガス入口部品を有するｃｖｄ反応装置 Active JP5148501B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102005056320.1 2005-11-25
DE102005056320A DE102005056320A1 (de) 2005-11-25 2005-11-25 CVD-Reaktor mit einem Gaseinlassorgan
PCT/EP2006/068716 WO2007060161A1 (de) 2005-11-25 2006-11-21 Cvd-reaktor mit einem gaseinlassorgan

Publications (3)

Publication Number Publication Date
JP2009517541A JP2009517541A (ja) 2009-04-30
JP2009517541A5 true JP2009517541A5 (https=) 2012-09-20
JP5148501B2 JP5148501B2 (ja) 2013-02-20

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ID=37681372

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Application Number Title Priority Date Filing Date
JP2008541731A Active JP5148501B2 (ja) 2005-11-25 2006-11-21 ガス入口部品を有するｃｖｄ反応装置

Country Status (8)

Country Link
US (1) US8152924B2 (https=)
EP (1) EP1954853B1 (https=)
JP (1) JP5148501B2 (https=)
KR (1) KR101354106B1 (https=)
AT (1) ATE531833T1 (https=)
DE (1) DE102005056320A1 (https=)
TW (1) TWI414624B (https=)
WO (1) WO2007060161A1 (https=)

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KR102369676B1 (ko) 2017-04-10 2022-03-04 삼성디스플레이 주식회사 표시 장치의 제조장치 및 표시 장치의 제조방법
KR102935543B1 (ko) 2019-07-17 2026-03-05 램 리써치 코포레이션 기판 프로세싱을 위한 산화 프로파일의 변조
DE102019131794A1 (de) * 2019-11-25 2021-05-27 Aixtron Se Wandgekühltes Gaseinlassorgan für einen CVD-Reaktor
DE102021103245A1 (de) * 2021-02-11 2022-08-11 Aixtron Se CVD-Reaktor mit einem in einer Vorlaufzone ansteigenden Prozesskammerboden
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