JP2009514690A - 制御された細孔径を有する微孔質cmp材料の製造方法 - Google Patents
制御された細孔径を有する微孔質cmp材料の製造方法 Download PDFInfo
- Publication number
- JP2009514690A JP2009514690A JP2008538918A JP2008538918A JP2009514690A JP 2009514690 A JP2009514690 A JP 2009514690A JP 2008538918 A JP2008538918 A JP 2008538918A JP 2008538918 A JP2008538918 A JP 2008538918A JP 2009514690 A JP2009514690 A JP 2009514690A
- Authority
- JP
- Japan
- Prior art keywords
- polymer
- polishing pad
- solvent
- polymer resin
- phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011148 porous material Substances 0.000 title claims abstract description 131
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000000463 material Substances 0.000 title description 21
- 238000005498 polishing Methods 0.000 claims abstract description 180
- 229920000642 polymer Polymers 0.000 claims abstract description 121
- 238000000034 method Methods 0.000 claims abstract description 73
- 239000002904 solvent Substances 0.000 claims abstract description 71
- 239000002952 polymeric resin Substances 0.000 claims abstract description 64
- 229920003002 synthetic resin Polymers 0.000 claims abstract description 64
- 238000005191 phase separation Methods 0.000 claims abstract description 33
- 239000000126 substance Substances 0.000 claims abstract description 21
- 230000008569 process Effects 0.000 claims abstract description 16
- 230000002950 deficient Effects 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 68
- 239000004793 Polystyrene Substances 0.000 claims description 19
- -1 polyethylene Polymers 0.000 claims description 19
- 239000000203 mixture Substances 0.000 claims description 18
- 229920002223 polystyrene Polymers 0.000 claims description 18
- 229920002803 thermoplastic polyurethane Polymers 0.000 claims description 17
- 239000004433 Thermoplastic polyurethane Substances 0.000 claims description 16
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 15
- 229920001577 copolymer Polymers 0.000 claims description 13
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 claims description 12
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 10
- 238000009826 distribution Methods 0.000 claims description 10
- 238000001330 spinodal decomposition reaction Methods 0.000 claims description 9
- 238000000354 decomposition reaction Methods 0.000 claims description 8
- 229920000515 polycarbonate Polymers 0.000 claims description 8
- 239000004417 polycarbonate Substances 0.000 claims description 8
- 239000004677 Nylon Substances 0.000 claims description 7
- 229920001778 nylon Polymers 0.000 claims description 7
- 239000004642 Polyimide Substances 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 6
- 229920001971 elastomer Polymers 0.000 claims description 6
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 6
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 6
- 229920001721 polyimide Polymers 0.000 claims description 6
- 239000005060 rubber Substances 0.000 claims description 6
- 238000002834 transmittance Methods 0.000 claims description 6
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 5
- 239000004698 Polyethylene Substances 0.000 claims description 5
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 5
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 5
- 229920000573 polyethylene Polymers 0.000 claims description 5
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 5
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 5
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 5
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 5
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 5
- 229920002725 thermoplastic elastomer Polymers 0.000 claims description 5
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 4
- 229920003235 aromatic polyamide Polymers 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 229920000412 polyarylene Polymers 0.000 claims description 4
- 229920002397 thermoplastic olefin Polymers 0.000 claims description 4
- 238000004108 freeze drying Methods 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 238000005266 casting Methods 0.000 claims description 2
- 239000003880 polar aprotic solvent Substances 0.000 claims description 2
- 239000012071 phase Substances 0.000 description 43
- 239000000243 solution Substances 0.000 description 36
- 239000007789 gas Substances 0.000 description 27
- 239000010410 layer Substances 0.000 description 23
- 229920002635 polyurethane Polymers 0.000 description 18
- 239000004814 polyurethane Substances 0.000 description 18
- 239000007787 solid Substances 0.000 description 16
- 235000012431 wafers Nutrition 0.000 description 14
- 239000000975 dye Substances 0.000 description 11
- 239000002245 particle Substances 0.000 description 10
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 8
- 230000003993 interaction Effects 0.000 description 8
- 238000007689 inspection Methods 0.000 description 7
- 238000010587 phase diagram Methods 0.000 description 7
- 238000007517 polishing process Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 229920002959 polymer blend Polymers 0.000 description 6
- 229920000098 polyolefin Polymers 0.000 description 6
- 238000000518 rheometry Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000011800 void material Substances 0.000 description 6
- 239000002131 composite material Substances 0.000 description 5
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 description 5
- 238000001125 extrusion Methods 0.000 description 5
- 238000011065 in-situ storage Methods 0.000 description 5
- 239000007791 liquid phase Substances 0.000 description 5
- 230000006911 nucleation Effects 0.000 description 5
- 238000010899 nucleation Methods 0.000 description 5
- 238000001291 vacuum drying Methods 0.000 description 5
- 238000001746 injection moulding Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000004377 microelectronic Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 4
- 239000002861 polymer material Substances 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 239000011877 solvent mixture Substances 0.000 description 4
- 239000004604 Blowing Agent Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 229920000219 Ethylene vinyl alcohol Polymers 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 230000002051 biphasic effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000004715 ethylene vinyl alcohol Substances 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- RZXDTJIXPSCHCI-UHFFFAOYSA-N hexa-1,5-diene-2,5-diol Chemical compound OC(=C)CCC(O)=C RZXDTJIXPSCHCI-UHFFFAOYSA-N 0.000 description 3
- 125000000962 organic group Chemical group 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 150000004703 alkoxides Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000071 blow moulding Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- LQZZUXJYWNFBMV-UHFFFAOYSA-N dodecan-1-ol Chemical compound CCCCCCCCCCCCO LQZZUXJYWNFBMV-UHFFFAOYSA-N 0.000 description 2
- 238000010097 foam moulding Methods 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- CPBQJMYROZQQJC-UHFFFAOYSA-N helium neon Chemical compound [He].[Ne] CPBQJMYROZQQJC-UHFFFAOYSA-N 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 238000000194 supercritical-fluid extraction Methods 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 238000003856 thermoforming Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- QETOCFXSZWSHLS-UHFFFAOYSA-N 1-azacyclooctadeca-1,3,5,7,9,11,13,15,17-nonaene Chemical compound C1=CC=CC=CC=CC=NC=CC=CC=CC=C1 QETOCFXSZWSHLS-UHFFFAOYSA-N 0.000 description 1
- OHMHBGPWCHTMQE-UHFFFAOYSA-N 2,2-dichloro-1,1,1-trifluoroethane Chemical compound FC(F)(F)C(Cl)Cl OHMHBGPWCHTMQE-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PMPVIKIVABFJJI-UHFFFAOYSA-N Cyclobutane Chemical compound C1CCC1 PMPVIKIVABFJJI-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- 229930182559 Natural dye Natural products 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 229920005830 Polyurethane Foam Polymers 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000004964 aerogel Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000001000 anthraquinone dye Substances 0.000 description 1
- 239000012296 anti-solvent Substances 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000008365 aqueous carrier Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 150000008378 aryl ethers Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 125000000732 arylene group Chemical group 0.000 description 1
- 239000000987 azo dye Substances 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 239000007853 buffer solution Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000012707 chemical precursor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 1
- 230000001112 coagulating effect Effects 0.000 description 1
- 238000005345 coagulation Methods 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 125000005442 diisocyanate group Chemical group 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 229920001038 ethylene copolymer Polymers 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 125000001905 inorganic group Chemical group 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 239000012968 metallocene catalyst Substances 0.000 description 1
- PGXWDLGWMQIXDT-UHFFFAOYSA-N methylsulfinylmethane;hydrate Chemical compound O.CS(C)=O PGXWDLGWMQIXDT-UHFFFAOYSA-N 0.000 description 1
- 239000000978 natural dye Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 239000001005 nitro dye Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001006 nitroso dye Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000005580 one pot reaction Methods 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000614 phase inversion technique Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011496 polyurethane foam Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000001044 red dye Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 239000000988 sulfur dye Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229920001897 terpolymer Polymers 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000004017 vitrification Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
- B24D11/001—Manufacture of flexible abrasive materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/28—Resins or natural or synthetic macromolecular compounds
- B24D3/32—Resins or natural or synthetic macromolecular compounds for porous or cellular structure
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Manufacture Of Porous Articles, And Recovery And Treatment Of Waste Products (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
なお、図2の均一溶液は160℃で調製し、そして徐冷した。データ点は透明溶液中の濁度により観察された相分離の境界線を表す。菱形の符号はバイノーダル境界線である。四角形の符号はスピノーダル境界線である。
Ed. James E. Mark著"Polymer Data Handbook",オックスフォード大学出版(ニューヨーク),1999年,p.874、
"Oberth Rubber Chem. and Technol.",1984年,63,56、
バートン(Barton)著"CRC Handbook of Solubility Parameters and Other Cohesion Parameters",CRC出版(ボーカラートン,フロリダ州),1983年,p. 256、及び
Prasadら著"Macromolecules",1989年,22,914。
例えば、ポリマー樹脂が熱可塑性ポリウレタン、芳香族エーテル系ポリウレタンであるとき、エーテル、ケトン、クロロホルム、テトラヒドロフラン(THF)、ジメチルアセトアミド(DMA)、ジメチルホルムアミド(DMF)などのような強い極性溶媒は0.3未満の相互作用パラメータを有し、またポリマーに対して「良溶媒」としての役割を果たすであろう。一方で、シクロヘキサン、シクロブタン、及びn‐アルカンのような炭化水素溶媒は、0.5を超える相互作用パラメータ及び貧溶媒又は「非溶媒」としての機能を有する。フローリー‐ハギンス相互作用パラメータは温度に敏感であるから、高温では良溶媒である溶媒が、より低い温度では非溶媒になり得る。非溶媒に加えられた微細なポリマー樹脂粒子の数が増えるとき、微細なポリマー樹脂粒子は、最初にテンドリルを、そして最終的に三次元ポリマー網目を形成するためにつながる。次に非溶媒混合物は、三次元ポリマー網目内で非溶媒を分離した液滴の形にしながら、冷却される。生成した材料は、サブミクロンの細孔径を有するポリマー材料である。
Claims (19)
- (a)ポリマー樹脂溶液の層を形成する工程、
(b)ポリマー樹脂溶液の層にバイノーダル分解、スピノーダル分解、溶媒‐非溶媒誘起の相分離、及びこれらの組み合わせからなる群から選ばれる相分離を起こし、分離した相の総容量の20〜90%を構成する連続的なポリマー欠乏相が散在している連続的なポリマーリッチ相を含む相互につながったポリマー綱目を形成する工程、
(c)ポリマーリッチ相を凝固させ、0.01〜10μmの範囲の直径を有する細孔を含む実質的に相互につながった細孔の連続網目を特徴とし、細孔内に分散したポリマー欠乏相の少なくとも一部を有し、20〜90容量%の範囲の多孔度を有する多孔質ポリマーシートを形成する工程、
(d)多孔質ポリマーシートからポリマー欠乏相の少なくとも一部を除去する工程、及び
(e)多孔質ポリマーシートから化学機械研磨パッドを形成する工程
を含む化学機械研磨パッドの製造方法。 - ポリマー樹脂が、熱可塑性エラストマー、熱可塑性ポリウレタン、熱可塑性ポリオレフィン、ポリカーボネート、ポリビニルアルコール、ナイロン、弾性ゴム、弾性ポリエチレン、ポリテトラフルオロエチレン、ポリエチレンテレフタレート、ポリイミド、ポリアラミド、ポリアリーレン、ポリスチレン、ポリメチルメタクリレート、これらのコポリマー、及びこれらの混合物からなる群から選ばれる請求項1に記載の方法。
- ポリマー樹脂が熱可塑性ポリウレタンを含む請求項1に記載の方法。
- ポリマー樹脂溶液が、極性非プロトン溶媒及び水素結合性溶媒からなる群から選ばれる溶媒を含む請求項1に記載の方法。
- 溶媒が、N‐メチルピロリドン、ジメチルホルムアミド、メチルエチルケトン、テトラヒドロフラン、ジメチルアセトアミド、及びこれらの組み合わせからなる群から選ばれる請求項1に記載の方法。
- 相分離を起こす工程が、ポリマー樹脂溶液の層を冷却することにより又は非溶媒を混合物に加えることにより行われる請求項1に記載の方法。
- ポリマー欠乏相を除去する工程が、蒸発、溶媒交換、真空下の溶媒ストリッピング、凍結乾燥及びこれらの組み合わせからなる群から選ばれる方法により行われる請求項1に記載の方法。
- ポリマー溶液の層を形成する工程が、ポリマー樹脂溶液を基板の上にキャストすることにより行われる請求項1に記載の方法。
- ポリマー溶液の層を形成する工程が、基板の上へのポリマー樹脂溶液の層の押出により行われる請求項1に記載の方法。
- ポリマー樹脂溶液が1〜50質量%のポリマー樹脂を含む請求項1に記載の方法。
- ポリマー樹脂溶液が5〜20質量%のポリマー樹脂を含む請求項1に記載の方法。
- 多孔質ポリマーシートを含み、20〜90%の範囲の多孔度を有する実質的に相互につながった細孔の網目を特徴とする化学機械研磨パッドであって、
前記細孔の網目が、0.01〜10μmの範囲の直径を有する及び細孔の少なくとも75%が平均細孔径から5μm以内の細孔径を有する細孔径分布を有する細孔を含むことを特徴とする化学機械研磨パッド。 - 細孔の網目が0.1〜5μmの範囲の直径を有する細孔を含む請求項12に記載の化学機械研磨パッド。
- 細孔の網目が0.01〜2μmの範囲の直径を有する細孔を含む請求項12に記載の化学機械研磨パッド。
- ポリマーシートが20〜30%の範囲の多孔度を有する請求項12に記載の化学機械研磨パッド。
- ポリマーシートが70〜90%の範囲の多孔度を有する請求項12に記載の化学機械研磨パッド。
- ポリマーシートが、熱可塑性エラストマー、熱可塑性ポリウレタン、熱可塑性ポリオレフィン、ポリカーボネート、ポリビニルアルコール、ナイロン、弾性ゴム、弾性ポリエチレン、ポリテトラフルオロエチレン、ポリエチレンテレフタレート、ポリイミド、ポリアラミド、ポリアリーレン、ポリスチレン、ポリメチルメタクリレート、これらのコポリマー、及び前記の2種以上の組み合わせからなる群から選ばれるポリマー樹脂を含む請求項12に記載の化学機械研磨パッド。
- ポリマーシートが熱可塑性ポリウレタンを含む請求項12に記載の化学機械研磨パッド。
- パッドの厚さが0.15cmの部分を通して測定したときに、540〜560nmの範囲の波長を有する光に対して少なくとも10%の透過率を有する請求項12に記載の化学機械研磨パッド。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/265,607 | 2005-11-02 | ||
US11/265,607 US7311862B2 (en) | 2002-10-28 | 2005-11-02 | Method for manufacturing microporous CMP materials having controlled pore size |
PCT/US2006/041421 WO2007055901A1 (en) | 2005-11-02 | 2006-10-24 | Method for manufacturing microporous cmp materials having controlled pore size |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009514690A true JP2009514690A (ja) | 2009-04-09 |
JP5749420B2 JP5749420B2 (ja) | 2015-07-15 |
Family
ID=38023575
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008538918A Active JP5749420B2 (ja) | 2005-11-02 | 2006-10-24 | 制御された細孔径を有する微孔質cmp材料の製造方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US7311862B2 (ja) |
EP (1) | EP1963048A4 (ja) |
JP (1) | JP5749420B2 (ja) |
KR (1) | KR101130359B1 (ja) |
CN (1) | CN101316683B (ja) |
TW (1) | TWI309994B (ja) |
WO (1) | WO2007055901A1 (ja) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103009238A (zh) * | 2012-12-24 | 2013-04-03 | 江苏中晶光电有限公司 | 高效、无划伤、长寿命橡胶高分子材料抛光垫 |
WO2014141889A1 (ja) * | 2013-03-12 | 2014-09-18 | 国立大学法人九州大学 | 研磨パッド及び研磨方法 |
JPWO2014057898A1 (ja) * | 2012-10-09 | 2016-09-05 | ユニチカ株式会社 | ポリイミド−シリカ複合多孔体およびその製造方法 |
JP2017052077A (ja) * | 2015-06-26 | 2017-03-16 | ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド | 研磨パッドを形成するための気孔率制御方法 |
JP2018039105A (ja) * | 2016-08-04 | 2018-03-15 | ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド | 熱可塑性ポロメリック研磨パッド |
JP6460298B1 (ja) * | 2017-08-03 | 2019-01-30 | Dic株式会社 | 多孔体の製造方法 |
WO2019026446A1 (ja) * | 2017-08-03 | 2019-02-07 | Dic株式会社 | 多孔体の製造方法 |
JP2021088691A (ja) * | 2018-12-26 | 2021-06-10 | 株式会社リコー | 液体組成物、収容容器、多孔質樹脂製造装置、多孔質樹脂製造方法、担持体形成用組成物、白色インク、分離層形成用組成物、及び反応層形成用組成物 |
WO2022138958A1 (ja) * | 2020-12-25 | 2022-06-30 | 富士紡ホールディングス株式会社 | 研磨パッド、その製造方法、及び研磨加工物の製造方法、並びに、ラッピングパッド、その製造方法、及びラップ加工物の製造方法 |
JP7534280B2 (ja) | 2021-12-03 | 2024-08-14 | トヨタ自動車株式会社 | オレフィン系樹脂多孔質体の製造方法、電池用セパレータの製造方法、および製造装置 |
Families Citing this family (64)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8066552B2 (en) * | 2003-10-03 | 2011-11-29 | Applied Materials, Inc. | Multi-layer polishing pad for low-pressure polishing |
KR100727485B1 (ko) * | 2005-08-09 | 2007-06-13 | 삼성전자주식회사 | 연마 패드 및 이를 제조하는 방법, 그리고 화학적 기계적 연마 장치 및 방법 |
US7604529B2 (en) * | 2006-02-16 | 2009-10-20 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Three-dimensional network for chemical mechanical polishing |
US7503833B2 (en) * | 2006-02-16 | 2009-03-17 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Three-dimensional network for chemical mechanical polishing |
WO2007115367A1 (en) | 2006-04-07 | 2007-10-18 | The University Of Queensland | Porous polymer blend structures |
US8222308B2 (en) * | 2006-04-07 | 2012-07-17 | The University Of Queensland | Porous polymer structures |
US7438636B2 (en) * | 2006-12-21 | 2008-10-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad |
US7635290B2 (en) | 2007-08-15 | 2009-12-22 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Interpenetrating network for chemical mechanical polishing |
US7530887B2 (en) * | 2007-08-16 | 2009-05-12 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad with controlled wetting |
US7828634B2 (en) * | 2007-08-16 | 2010-11-09 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Interconnected-multi-element-lattice polishing pad |
US7517277B2 (en) * | 2007-08-16 | 2009-04-14 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Layered-filament lattice for chemical mechanical polishing |
JP5078527B2 (ja) * | 2007-09-28 | 2012-11-21 | 富士紡ホールディングス株式会社 | 研磨布 |
JP2011517111A (ja) * | 2008-04-11 | 2011-05-26 | イノパッド,インコーポレイテッド | ボイドネットワークを有する化学機械的平坦化パッド |
US8303375B2 (en) * | 2009-01-12 | 2012-11-06 | Novaplanar Technology, Inc. | Polishing pads for chemical mechanical planarization and/or other polishing methods |
US20100178853A1 (en) * | 2009-01-12 | 2010-07-15 | Novaplanar Technology, Inc. | Polishing pads for chemical mechanical planarization and/or other polishing methods |
US8585790B2 (en) * | 2009-04-23 | 2013-11-19 | Applied Materials, Inc. | Treatment of polishing pad window |
US20120085038A1 (en) * | 2009-06-10 | 2012-04-12 | Lg Chem, Ltd. | Method for manufacturing porous sheet and porous sheet manufactured by the method |
US8162728B2 (en) * | 2009-09-28 | 2012-04-24 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Dual-pore structure polishing pad |
RU2012143158A (ru) | 2010-03-10 | 2014-04-20 | ДАУ ГЛОБАЛ ТЕКНОЛОДЖИЗ ЭлЭлСи | Нанопористый пенополимер, характеризующийся высокой алотностью ячеек в отсутствие нанонаполнителя |
US20110287698A1 (en) * | 2010-05-18 | 2011-11-24 | Hitachi Global Storage Technologies Netherlands B.V. | System, method and apparatus for elastomer pad for fabricating magnetic recording disks |
BR112013017259A2 (pt) * | 2011-01-17 | 2018-06-05 | 3M Innovative Properties Co | método de moldagem por injeção e reação de uma espuma de poliuretano e artigo de espuma de poliuretano |
US9108291B2 (en) * | 2011-09-22 | 2015-08-18 | Dow Global Technologies Llc | Method of forming structured-open-network polishing pads |
US10722997B2 (en) | 2012-04-02 | 2020-07-28 | Thomas West, Inc. | Multilayer polishing pads made by the methods for centrifugal casting of polymer polish pads |
US11090778B2 (en) * | 2012-04-02 | 2021-08-17 | Thomas West, Inc. | Methods and systems for centrifugal casting of polymer polish pads and polishing pads made by the methods |
US10022842B2 (en) | 2012-04-02 | 2018-07-17 | Thomas West, Inc. | Method and systems to control optical transmissivity of a polish pad material |
US20140054266A1 (en) * | 2012-08-24 | 2014-02-27 | Wiechang Jin | Compositions and methods for selective polishing of platinum and ruthenium materials |
US20150056895A1 (en) * | 2013-08-22 | 2015-02-26 | Cabot Microelectronics Corporation | Ultra high void volume polishing pad with closed pore structure |
US9159696B2 (en) | 2013-09-13 | 2015-10-13 | GlobalFoundries, Inc. | Plug via formation by patterned plating and polishing |
US9993907B2 (en) * | 2013-12-20 | 2018-06-12 | Applied Materials, Inc. | Printed chemical mechanical polishing pad having printed window |
US9463550B2 (en) * | 2014-02-19 | 2016-10-11 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of manufacturing chemical mechanical polishing layers |
US9463553B2 (en) * | 2014-02-19 | 2016-10-11 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of manufacturing chemical mechanical polishing layers |
BR112016006779A2 (pt) * | 2014-05-01 | 2017-08-01 | 3M Innovative Properties Co | artigos abrasivos flexíveis e método de abrasão de uma peça de trabalho |
US9873180B2 (en) | 2014-10-17 | 2018-01-23 | Applied Materials, Inc. | CMP pad construction with composite material properties using additive manufacturing processes |
US10875145B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Polishing pads produced by an additive manufacturing process |
KR102436416B1 (ko) | 2014-10-17 | 2022-08-26 | 어플라이드 머티어리얼스, 인코포레이티드 | 애디티브 제조 프로세스들을 이용한 복합 재료 특성들을 갖는 cmp 패드 구성 |
US10399201B2 (en) | 2014-10-17 | 2019-09-03 | Applied Materials, Inc. | Advanced polishing pads having compositional gradients by use of an additive manufacturing process |
US9776361B2 (en) | 2014-10-17 | 2017-10-03 | Applied Materials, Inc. | Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles |
US11745302B2 (en) | 2014-10-17 | 2023-09-05 | Applied Materials, Inc. | Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process |
US10875153B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Advanced polishing pad materials and formulations |
US10821573B2 (en) | 2014-10-17 | 2020-11-03 | Applied Materials, Inc. | Polishing pads produced by an additive manufacturing process |
CN113103145B (zh) | 2015-10-30 | 2023-04-11 | 应用材料公司 | 形成具有期望ζ电位的抛光制品的设备与方法 |
US10593574B2 (en) | 2015-11-06 | 2020-03-17 | Applied Materials, Inc. | Techniques for combining CMP process tracking data with 3D printed CMP consumables |
KR102629800B1 (ko) | 2016-01-19 | 2024-01-29 | 어플라이드 머티어리얼스, 인코포레이티드 | 다공성 화학적 기계적 연마 패드들 |
US10391605B2 (en) | 2016-01-19 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process |
TWI593511B (zh) | 2016-06-08 | 2017-08-01 | 智勝科技股份有限公司 | 研磨墊及研磨方法 |
KR101835087B1 (ko) * | 2017-05-29 | 2018-03-06 | 에스케이씨 주식회사 | 다공성 폴리우레탄 연마패드 및 이를 사용하여 반도체 소자를 제조하는 방법 |
US11471999B2 (en) | 2017-07-26 | 2022-10-18 | Applied Materials, Inc. | Integrated abrasive polishing pads and manufacturing methods |
US11072050B2 (en) | 2017-08-04 | 2021-07-27 | Applied Materials, Inc. | Polishing pad with window and manufacturing methods thereof |
WO2019032286A1 (en) | 2017-08-07 | 2019-02-14 | Applied Materials, Inc. | ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME |
US20210101132A1 (en) * | 2017-11-16 | 2021-04-08 | 3M Innovative Properties Company | Polymer matrix composites comprising at least one of soluble or swellable particles and methods of making the same |
US11826876B2 (en) | 2018-05-07 | 2023-11-28 | Applied Materials, Inc. | Hydrophilic and zeta potential tunable chemical mechanical polishing pads |
US11697183B2 (en) * | 2018-07-26 | 2023-07-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fabrication of a polishing pad for chemical mechanical polishing |
KR20210042171A (ko) | 2018-09-04 | 2021-04-16 | 어플라이드 머티어리얼스, 인코포레이티드 | 진보한 폴리싱 패드들을 위한 제형들 |
ES2734500B2 (es) * | 2018-11-12 | 2020-06-03 | Drylyte Sl | Uso de un HCl en electrolitos secos para pulir Ti y otras superficies de metales y aleaciones a través de transporte iónico |
CN109631409A (zh) * | 2019-01-19 | 2019-04-16 | 天津大学 | 耐高温高红外发射的被动式辐射冷却结构及冷却方法 |
US11851570B2 (en) | 2019-04-12 | 2023-12-26 | Applied Materials, Inc. | Anionic polishing pads formed by printing processes |
CN110898681B (zh) * | 2019-09-26 | 2021-11-16 | 上海稀点新材料科技有限公司 | 具有纳米多孔结构的平板膜及其制备方法 |
US11813712B2 (en) | 2019-12-20 | 2023-11-14 | Applied Materials, Inc. | Polishing pads having selectively arranged porosity |
US11806829B2 (en) | 2020-06-19 | 2023-11-07 | Applied Materials, Inc. | Advanced polishing pads and related polishing pad manufacturing methods |
US11878389B2 (en) | 2021-02-10 | 2024-01-23 | Applied Materials, Inc. | Structures formed using an additive manufacturing process for regenerating surface texture in situ |
CN113799008B (zh) * | 2021-09-27 | 2022-10-21 | 苏州赛尔特新材料有限公司 | 一种自修整冻干抛光轮及其制备方法与应用 |
CN113798991B (zh) * | 2021-09-27 | 2022-10-21 | 苏州赛尔特新材料有限公司 | 一种超精密高质量抛光金刚石晶圆的方法 |
CN113977453B (zh) * | 2021-11-08 | 2023-01-13 | 万华化学集团电子材料有限公司 | 提高抛光平坦度的化学机械抛光垫及其应用 |
CN118290810B (zh) * | 2024-06-05 | 2024-08-13 | 浙江新恒泰新材料股份有限公司 | 一种微孔发泡热塑性聚氨酯基材及其制备方法与应用 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08293477A (ja) * | 1995-04-25 | 1996-11-05 | Nitta Ind Corp | 研磨布及びその研磨布の研磨機定盤への脱着方法 |
US20040082276A1 (en) * | 2002-10-28 | 2004-04-29 | Cabot Microelectronics Corporation | Transparent microporous materials for CMP |
JP2004337986A (ja) * | 2003-05-12 | 2004-12-02 | Noritake Co Ltd | 円筒状樹脂砥石およびその製造方法 |
JP2005034971A (ja) * | 2003-07-17 | 2005-02-10 | Toray Coatex Co Ltd | 研磨シート |
JP2005532176A (ja) * | 2002-05-23 | 2005-10-27 | キャボット マイクロエレクトロニクス コーポレイション | 微小孔性研磨パッド |
Family Cites Families (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4138228A (en) | 1977-02-02 | 1979-02-06 | Ralf Hoehn | Abrasive of a microporous polymer matrix with inorganic particles thereon |
US4239567A (en) | 1978-10-16 | 1980-12-16 | Western Electric Company, Inc. | Removably holding planar articles for polishing operations |
JPH01193166A (ja) | 1988-01-28 | 1989-08-03 | Showa Denko Kk | 半導体ウェハ鏡面研磨用パッド |
US5182307A (en) | 1990-11-21 | 1993-01-26 | Board Of Regents Of The University Of Washington | Polyethylene terephthalate foams with integral crystalline skins |
ZA943348B (en) | 1993-05-21 | 1995-11-16 | Hirano Toshio | A gene encoding a polypeptide having pre-B cell growth-supporting ability |
DE4321823C2 (de) * | 1993-07-01 | 1997-03-06 | Telefunken Microelectron | Beleuchtungseinheit für Leuchtschilder |
US5441598A (en) | 1993-12-16 | 1995-08-15 | Motorola, Inc. | Polishing pad for chemical-mechanical polishing of a semiconductor substrate |
US5489233A (en) | 1994-04-08 | 1996-02-06 | Rodel, Inc. | Polishing pads and methods for their use |
US5684055A (en) | 1994-12-13 | 1997-11-04 | University Of Washington | Semi-continuous production of solid state polymeric foams |
US5893796A (en) | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
US5964643A (en) | 1995-03-28 | 1999-10-12 | Applied Materials, Inc. | Apparatus and method for in-situ monitoring of chemical mechanical polishing operations |
US5605760A (en) | 1995-08-21 | 1997-02-25 | Rodel, Inc. | Polishing pads |
GB2316414B (en) | 1996-07-31 | 2000-10-11 | Tosoh Corp | Abrasive shaped article, abrasive disc and polishing method |
ATE295254T1 (de) | 1996-08-27 | 2005-05-15 | Trexel Inc | Verfahren zum extrudieren von mikrozellenpolymeren |
WO1998028108A1 (en) | 1996-12-20 | 1998-07-02 | Unique Technology International Private Limited | Manufacture of porous polishing pad |
US6022268A (en) | 1998-04-03 | 2000-02-08 | Rodel Holdings Inc. | Polishing pads and methods relating thereto |
WO1998047662A1 (en) | 1997-04-18 | 1998-10-29 | Cabot Corporation | Polishing pad for a semiconductor substrate |
US6126532A (en) * | 1997-04-18 | 2000-10-03 | Cabot Corporation | Polishing pads for a semiconductor substrate |
US6235380B1 (en) | 1997-07-24 | 2001-05-22 | Trexel, Inc. | Lamination of microcellular articles |
AU1933799A (en) | 1997-12-19 | 1999-07-12 | Trexel, Inc. | Microcellular foam extrusion/blow molding process and article made thereby |
US6231942B1 (en) | 1998-01-21 | 2001-05-15 | Trexel, Inc. | Method and apparatus for microcellular polypropylene extrusion, and polypropylene articles produced thereby |
GB2334205B (en) | 1998-02-12 | 2001-11-28 | Shinetsu Handotai Kk | Polishing method for semiconductor wafer and polishing pad used therein |
US6248000B1 (en) | 1998-03-24 | 2001-06-19 | Nikon Research Corporation Of America | Polishing pad thinning to optically access a semiconductor wafer surface |
US6117000A (en) * | 1998-07-10 | 2000-09-12 | Cabot Corporation | Polishing pad for a semiconductor substrate |
JP2918883B1 (ja) | 1998-07-15 | 1999-07-12 | 日本ピラー工業株式会社 | 研磨パッド |
KR100574311B1 (ko) | 1998-08-28 | 2006-04-27 | 도레이 가부시끼가이샤 | 연마 패드 |
US6322347B1 (en) | 1999-04-02 | 2001-11-27 | Trexel, Inc. | Methods for manufacturing foam material including systems with pressure restriction element |
EP1043378B1 (en) | 1999-04-09 | 2006-02-15 | Tosoh Corporation | Molded abrasive product and polishing wheel using it |
US6656018B1 (en) * | 1999-04-13 | 2003-12-02 | Freudenberg Nonwovens Limited Partnership | Polishing pads useful in chemical mechanical polishing of substrates in the presence of a slurry containing abrasive particles |
US6146242A (en) | 1999-06-11 | 2000-11-14 | Strasbaugh, Inc. | Optical view port for chemical mechanical planarization endpoint detection |
US6171181B1 (en) | 1999-08-17 | 2001-01-09 | Rodel Holdings, Inc. | Molded polishing pad having integral window |
US6602064B1 (en) | 1999-08-31 | 2003-08-05 | Trexel, Inc. | Polymer processing system and apparatus |
US20020090819A1 (en) | 1999-08-31 | 2002-07-11 | Cangshan Xu | Windowless belt and method for improved in-situ wafer monitoring |
JP2003510826A (ja) | 1999-09-29 | 2003-03-18 | ロデール ホールディングス インコーポレイテッド | 研磨パッド |
WO2001036521A2 (en) | 1999-11-05 | 2001-05-25 | Trexel, Inc. | Thermoformed polyolefin foams and methods of their production |
EP1212171A1 (en) * | 1999-12-23 | 2002-06-12 | Rodel Holdings, Inc. | Self-leveling pads and methods relating thereto |
US6368200B1 (en) | 2000-03-02 | 2002-04-09 | Agere Systems Guardian Corporation | Polishing pads from closed-cell elastomer foam |
WO2001068322A1 (en) | 2000-03-15 | 2001-09-20 | Rodel Holdings, Inc. | Window portion with an adjusted rate of wear |
US6759325B2 (en) * | 2000-05-15 | 2004-07-06 | Asm Microchemistry Oy | Sealing porous structures |
US6454634B1 (en) | 2000-05-27 | 2002-09-24 | Rodel Holdings Inc. | Polishing pads for chemical mechanical planarization |
JP3925041B2 (ja) | 2000-05-31 | 2007-06-06 | Jsr株式会社 | 研磨パッド用組成物及びこれを用いた研磨パッド |
JP2001348271A (ja) | 2000-06-01 | 2001-12-18 | Tosoh Corp | 研磨用成形体及びこれを用いた研磨用定盤 |
US6685537B1 (en) | 2000-06-05 | 2004-02-03 | Speedfam-Ipec Corporation | Polishing pad window for a chemical mechanical polishing tool |
JP4916638B2 (ja) | 2000-06-30 | 2012-04-18 | ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド | 研磨パッド用ベースパッド |
US6458013B1 (en) | 2000-07-31 | 2002-10-01 | Asml Us, Inc. | Method of chemical mechanical polishing |
US6641471B1 (en) | 2000-09-19 | 2003-11-04 | Rodel Holdings, Inc | Polishing pad having an advantageous micro-texture and methods relating thereto |
US20020072296A1 (en) | 2000-11-29 | 2002-06-13 | Muilenburg Michael J. | Abrasive article having a window system for polishing wafers, and methods |
EP1211024A3 (en) | 2000-11-30 | 2004-01-02 | JSR Corporation | Polishing method |
US20020098790A1 (en) | 2001-01-19 | 2002-07-25 | Burke Peter A. | Open structure polishing pad and methods for limiting pore depth |
US6840843B2 (en) | 2001-03-01 | 2005-01-11 | Cabot Microelectronics Corporation | Method for manufacturing a polishing pad having a compressed translucent region |
US20040171339A1 (en) * | 2002-10-28 | 2004-09-02 | Cabot Microelectronics Corporation | Microporous polishing pads |
-
2005
- 2005-11-02 US US11/265,607 patent/US7311862B2/en not_active Expired - Lifetime
-
2006
- 2006-10-24 KR KR1020087013051A patent/KR101130359B1/ko active IP Right Grant
- 2006-10-24 EP EP06817322.8A patent/EP1963048A4/en not_active Withdrawn
- 2006-10-24 WO PCT/US2006/041421 patent/WO2007055901A1/en active Application Filing
- 2006-10-24 CN CN2006800442814A patent/CN101316683B/zh active Active
- 2006-10-24 JP JP2008538918A patent/JP5749420B2/ja active Active
- 2006-11-01 TW TW095140448A patent/TWI309994B/zh active
-
2007
- 2007-10-30 US US11/978,748 patent/US20080057845A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08293477A (ja) * | 1995-04-25 | 1996-11-05 | Nitta Ind Corp | 研磨布及びその研磨布の研磨機定盤への脱着方法 |
JP2005532176A (ja) * | 2002-05-23 | 2005-10-27 | キャボット マイクロエレクトロニクス コーポレイション | 微小孔性研磨パッド |
US20040082276A1 (en) * | 2002-10-28 | 2004-04-29 | Cabot Microelectronics Corporation | Transparent microporous materials for CMP |
JP2004337986A (ja) * | 2003-05-12 | 2004-12-02 | Noritake Co Ltd | 円筒状樹脂砥石およびその製造方法 |
JP2005034971A (ja) * | 2003-07-17 | 2005-02-10 | Toray Coatex Co Ltd | 研磨シート |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2014057898A1 (ja) * | 2012-10-09 | 2016-09-05 | ユニチカ株式会社 | ポリイミド−シリカ複合多孔体およびその製造方法 |
CN103009238A (zh) * | 2012-12-24 | 2013-04-03 | 江苏中晶光电有限公司 | 高效、无划伤、长寿命橡胶高分子材料抛光垫 |
WO2014141889A1 (ja) * | 2013-03-12 | 2014-09-18 | 国立大学法人九州大学 | 研磨パッド及び研磨方法 |
JPWO2014141889A1 (ja) * | 2013-03-12 | 2017-02-16 | 国立大学法人九州大学 | 研磨パッド及び研磨方法 |
US9956669B2 (en) | 2013-03-12 | 2018-05-01 | Kyushu University, National University Corporation | Polishing pad and polishing method |
JP2017052077A (ja) * | 2015-06-26 | 2017-03-16 | ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド | 研磨パッドを形成するための気孔率制御方法 |
JP2018039105A (ja) * | 2016-08-04 | 2018-03-15 | ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド | 熱可塑性ポロメリック研磨パッド |
JP7127971B2 (ja) | 2016-08-04 | 2022-08-30 | ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド | 熱可塑性ポロメリック研磨パッド |
WO2019026446A1 (ja) * | 2017-08-03 | 2019-02-07 | Dic株式会社 | 多孔体の製造方法 |
EP3663343A4 (en) * | 2017-08-03 | 2021-04-28 | DIC Corporation | PROCESS FOR THE PRODUCTION OF A POROUS OBJECT |
US11111353B2 (en) | 2017-08-03 | 2021-09-07 | Dic Corporation | Porous-object production method |
JP6460298B1 (ja) * | 2017-08-03 | 2019-01-30 | Dic株式会社 | 多孔体の製造方法 |
JP2021088691A (ja) * | 2018-12-26 | 2021-06-10 | 株式会社リコー | 液体組成物、収容容器、多孔質樹脂製造装置、多孔質樹脂製造方法、担持体形成用組成物、白色インク、分離層形成用組成物、及び反応層形成用組成物 |
JP7434875B2 (ja) | 2018-12-26 | 2024-02-21 | 株式会社リコー | 液体組成物、収容容器、多孔質樹脂製造装置、多孔質樹脂製造方法、担持体形成用組成物、白色インク、分離層形成用組成物、及び反応層形成用組成物 |
WO2022138958A1 (ja) * | 2020-12-25 | 2022-06-30 | 富士紡ホールディングス株式会社 | 研磨パッド、その製造方法、及び研磨加工物の製造方法、並びに、ラッピングパッド、その製造方法、及びラップ加工物の製造方法 |
JP7534280B2 (ja) | 2021-12-03 | 2024-08-14 | トヨタ自動車株式会社 | オレフィン系樹脂多孔質体の製造方法、電池用セパレータの製造方法、および製造装置 |
Also Published As
Publication number | Publication date |
---|---|
US7311862B2 (en) | 2007-12-25 |
US20060052040A1 (en) | 2006-03-09 |
KR20080064997A (ko) | 2008-07-10 |
WO2007055901A1 (en) | 2007-05-18 |
CN101316683A (zh) | 2008-12-03 |
KR101130359B1 (ko) | 2012-03-27 |
US20080057845A1 (en) | 2008-03-06 |
TWI309994B (en) | 2009-05-21 |
TW200724303A (en) | 2007-07-01 |
JP5749420B2 (ja) | 2015-07-15 |
CN101316683B (zh) | 2010-12-29 |
EP1963048A4 (en) | 2015-04-15 |
EP1963048A1 (en) | 2008-09-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5749420B2 (ja) | 制御された細孔径を有する微孔質cmp材料の製造方法 | |
US7267607B2 (en) | Transparent microporous materials for CMP | |
JP5986268B2 (ja) | 化学機械的研磨のための透明な多孔性材料 | |
KR101281874B1 (ko) | 표면-텍스쳐화 미공질 연마 패드 | |
KR101109324B1 (ko) | 미세다공성 영역을 갖는 연마 패드 | |
KR101109211B1 (ko) | 배향된 포아 구조를 갖는 연마 패드 | |
JP2005532176A (ja) | 微小孔性研磨パッド |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20091008 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120306 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120605 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120612 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120906 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20130326 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130726 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20130805 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20131011 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20140122 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20140128 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20141208 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20141211 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150306 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150514 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5749420 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |