JP2017052077A - 研磨パッドを形成するための気孔率制御方法 - Google Patents
研磨パッドを形成するための気孔率制御方法 Download PDFInfo
- Publication number
- JP2017052077A JP2017052077A JP2016125337A JP2016125337A JP2017052077A JP 2017052077 A JP2017052077 A JP 2017052077A JP 2016125337 A JP2016125337 A JP 2016125337A JP 2016125337 A JP2016125337 A JP 2016125337A JP 2017052077 A JP2017052077 A JP 2017052077A
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- Prior art keywords
- surfactant
- polishing pad
- liquid polymer
- pores
- cylindrical chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 1
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- 239000007795 chemical reaction product Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/009—Tools not otherwise provided for
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
- B24D11/001—Manufacture of flexible abrasive materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/0009—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using moulds or presses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C41/00—Shaping by coating a mould, core or other substrate, i.e. by depositing material and stripping-off the shaped article; Apparatus therefor
- B29C41/02—Shaping by coating a mould, core or other substrate, i.e. by depositing material and stripping-off the shaped article; Apparatus therefor for making articles of definite length, i.e. discrete articles
- B29C41/12—Spreading-out the material on a substrate, e.g. on the surface of a liquid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
- B29L2031/00—Other particular articles
- B29L2031/736—Grinding or polishing equipment
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
ケミカルメカニカル研磨層を形成するための様々な従来法、たとえば流込み成形法(すなわち、複数の研磨層へとスカイビングされるケーキを形成する)及び発泡法は、処理を促進するために十分に長いゲル化時間を要する。発泡法及び流込み成形法は、形成された研磨層の表面に最終的な溝パターンを機械加工することを要する。本発明の方法は、研磨層の研磨面に形成される溝パターンの質を大きく改善し、多くの従来の研磨層製造法によって求められるような、完成した研磨層に溝パターンを機械加工する必要性を除く。本発明の方法はまた、従来技術に固有の制約(すなわちゲル化時間の制約)を考慮すると、従来の研磨層製造法に適当であろう組成範囲よりも広い組成範囲を可能にする。
実施例1(カチオン性界面活性剤高濃度)
二成分プロセスライン中、タンクA(イソ側)に、イソシアネートIsonate(商標)181メチレンジフェニルジイソシアネート(MDI)プレポリマー(メチレンジフェニルジイソシアネート、ジプロピレングリコール、トリプロピレングルコールコポリマー45〜55重量%及び4,4′−メチレンジフェニルジイソシアネート異性体45〜55重量%)98.04重量部を入れた。加えて、タンクAには、界面活性剤Niax L5345非イオン性シリコーン界面活性剤1.96重量部を残余として入れた。この界面活性剤は、ポリアルキレンオキシドメチルシロキサンコポリマーを含み、コポリマーは、ポリアルキレンオキシド30〜50重量%及びオクタメチルシクロテトラシロキサン0.1〜1重量%を有するものであった。材料をかく拌し、華氏120度(48.9℃)に加熱した。
二成分プロセスライン中、タンクA(イソ側)に、イソシアネートIsonate(商標)181メチレンジフェニルジイソシアネート(MDI)プレポリマー(メチレンジフェニルジイソシアネート、ジプロピレングリコール、トリプロピレングルコールコポリマー45〜55重量%及び4,4′−メチレンジフェニルジイソシアネート異性体45〜55重量%)98.04重量部を入れた。加えて、タンクAには、界面活性剤Niax L5345非イオン性シリコーン界面活性剤1.96重量部を残余として入れた。この界面活性剤は、ポリアルキレンオキシドメチルシロキサンコポリマーを含み、コポリマーは、ポリアルキレンオキシド30〜50重量%及びオクタメチルシクロテトラシロキサン0.1〜1重量%を有するものであった。材料をかく拌し、華氏120度(48.9℃)に加熱した。
二成分プロセスライン中、タンクA(イソ側)に、イソシアネートIsonate 181メチレンジフェニルジイソシアネート(MDI)プレポリマー(メチレンジフェニルジイソシアネート、ジプロピレングリコール、トリプロピレングルコールコポリマー45〜55重量%及び4,4′−メチレンジフェニルジイソシアネート異性体45〜55重量%)98.04重量部を入れた。加えて、タンクAには、界面活性剤Niax L5345非イオン性シリコーン界面活性剤1.96重量部を残余として入れた。この界面活性剤は、ポリアルキレンオキシドメチルシロキサンのコポリマーを含み、コポリマーは、ポリアルキレンオキシド30〜50重量%及びオクタメチルシクロテトラシロキサン0.1〜1重量%を有するものであった。材料をかく拌し、華氏120度(48.9℃)に加熱した。
二成分プロセスライン中、タンクA(イソ側)に、ChemuturaのイソシアネートプレポリマーLF 750Dウレタンプレポリマー(NCO8.75〜9.05重量%を有する、トルエンジイソシアネート(TDI)とポリテトラメチレンエーテルグリコール(PTMEG)とのプレポリマーブレンド)98.04部を入れた。加えて、タンクAには、界面活性剤Niax L5345非イオン性シリコーン界面活性剤1.96重量部を残余として入れた。この界面活性剤は、ポリアルキレンオキシドメチルシロキサンのコポリマーを含み、コポリマーは、ポリアルキレンオキシド30〜50重量%及びオクタメチルシクロテトラシロキサン0.1〜1重量%を有するものであった。材料をかく拌し、華氏135度(57.2℃)に加熱した。
Claims (10)
- 半導体基材、光学基材及び磁性基材の少なくとも一つを平坦化するのに適した研磨パッドを製造する方法であって、
a.液体ポリマーの液滴を基材に掛けて液体ポリマー中に複数の気孔を形成する工程であって、液体ポリマーが、液体ポリマー内での気孔の成長を促進するのに十分な濃度を有する非イオン性界面活性剤と、液体ポリマー内での気孔の成長を抑制するのに十分な濃度を有するイオン性界面活性剤とを含有する、工程、
b.基材に対する液体ポリマーの液滴を、複数の気孔を含有する固体ポリマーへと固化させる工程、
c.液体ポリマーの液滴を掛ける工程及び液体ポリマーの液滴を固化させる工程を複数回繰り返して、固体基材(ポリマー)の厚さを増す工程、及び
d.固体ポリマーを、非イオン性界面活性剤及びイオン性界面活性剤の濃度によって複数の気孔の最終孔径が制御されている研磨パッドへと硬化させる工程
を含む方法。 - 液滴が型に当たって研磨パッド中に溝パターンを形成する、請求項1記載の方法。
- 非イオン性界面活性がシリコーン界面活性剤であり、イオン性界面活性剤がカチオン性界面活性剤である、請求項1記載の方法。
- カチオン性界面活性剤の量を減らして孔径を増し、サブパッドを形成するさらなる工程を含む、請求項1記載の方法。
- 硬化させる工程が、0.3〜0.9g/cm3の密度を有する研磨パッドを形成する、請求項1記載の方法。
- 半導体基材、光学基材及び磁性基材の少なくとも一つを平坦化するのに適した研磨パッドを製造する方法であって、
a.液体ポリマーの液滴を基材に掛けて液体ポリマー中に複数の気孔を形成する工程であって、液体ポリマーが、液体ポリマー内での気孔の成長を促進するのに十分な濃度を有する非イオン性界面活性剤と、液体ポリマー内での気孔の成長を抑制するのに十分な濃度を有するイオン性界面活性剤とを含有する、工程、
b.隣接する気孔を接続して、相互接続された気孔のネットワークを液体ポリマー中に形成する工程、
c.基材に対する液体ポリマーの液滴を、複数の気孔を含有する固体ポリマーへと固化させる工程、
d.液体ポリマーの液滴を掛ける工程、隣接する気孔を接続する工程及び液体ポリマーの液滴を固化させる工程を複数回繰り返して固体基材(ポリマー)の厚さを増す工程、及び
e.固体ポリマーを、非イオン性界面活性剤及びイオン性界面活性剤の濃度によって複数の気孔の最終孔径が制御されている研磨パッドへと硬化させる工程
を含む方法。 - 液滴が型に当たって研磨パッド中に溝パターンを形成する、請求項1記載の方法。
- 非イオン性界面活性がシリコーン界面活性剤であり、イオン性界面活性剤がカチオン性界面活性剤である、請求項1記載の方法。
- カチオン性界面活性剤の量を減らして孔径を増し、サブパッドを形成するさらなる工程を含む、請求項1記載の方法。
- 硬化させる工程が、0.3〜0.9g/cm3の密度を有する研磨パッドを形成する、請求項1記載の方法。
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US14/751,328 US10005172B2 (en) | 2015-06-26 | 2015-06-26 | Controlled-porosity method for forming polishing pad |
US14/751,328 | 2015-06-26 |
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JP2017052077A true JP2017052077A (ja) | 2017-03-16 |
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JP (1) | JP6870927B2 (ja) |
KR (1) | KR102514354B1 (ja) |
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US20230390970A1 (en) * | 2022-06-02 | 2023-12-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of making low specific gravity polishing pads |
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JP2013211549A (ja) * | 2012-03-22 | 2013-10-10 | Rohm & Haas Electronic Materials Cmp Holdings Inc | ケミカルメカニカル研磨層の製造方法 |
WO2015065793A1 (en) * | 2013-11-04 | 2015-05-07 | Applied Materials, Inc. | Printed chemical mechanical polishing pad having abrasives therein |
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JP2019098512A (ja) * | 2017-12-01 | 2019-06-24 | ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド | アミン開始ポリオール含有硬化剤からの高除去速度ケミカルメカニカルポリッシングパッド |
JP7197330B2 (ja) | 2017-12-01 | 2022-12-27 | ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド | アミン開始ポリオール含有硬化剤からの高除去速度ケミカルメカニカルポリッシングパッド |
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DE102016007777A1 (de) | 2016-12-29 |
CN107695903B (zh) | 2020-02-28 |
KR102514354B1 (ko) | 2023-03-28 |
US10005172B2 (en) | 2018-06-26 |
CN107695903A (zh) | 2018-02-16 |
FR3037833A1 (fr) | 2016-12-30 |
TWI704976B (zh) | 2020-09-21 |
JP6870927B2 (ja) | 2021-05-12 |
KR20170001624A (ko) | 2017-01-04 |
TW201700215A (zh) | 2017-01-01 |
FR3037833B1 (fr) | 2019-09-20 |
US20160375550A1 (en) | 2016-12-29 |
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