JP2009288625A - 電子回路およびパネル - Google Patents
電子回路およびパネル Download PDFInfo
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- JP2009288625A JP2009288625A JP2008142438A JP2008142438A JP2009288625A JP 2009288625 A JP2009288625 A JP 2009288625A JP 2008142438 A JP2008142438 A JP 2008142438A JP 2008142438 A JP2008142438 A JP 2008142438A JP 2009288625 A JP2009288625 A JP 2009288625A
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- 239000002184 metal Substances 0.000 claims abstract description 50
- 239000003990 capacitor Substances 0.000 claims description 22
- 238000005070 sampling Methods 0.000 claims description 22
- 239000000758 substrate Substances 0.000 abstract description 29
- 238000012545 processing Methods 0.000 abstract description 2
- 238000012937 correction Methods 0.000 description 38
- 230000003071 parasitic effect Effects 0.000 description 18
- 238000003860 storage Methods 0.000 description 17
- 238000010586 diagram Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Images
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0819—Several active elements per pixel in active matrix panels used for counteracting undesired variations, e.g. feedback or autozeroing
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
- G09G2300/0861—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor with additional control of the display period without amending the charge stored in a pixel memory, e.g. by means of additional select electrodes
- G09G2300/0866—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor with additional control of the display period without amending the charge stored in a pixel memory, e.g. by means of additional select electrodes by means of changes in the pixel supply voltage
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0219—Reducing feedthrough effects in active matrix panels, i.e. voltage changes on the scan electrode influencing the pixel voltage due to capacitive coupling
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0233—Improving the luminance or brightness uniformity across the screen
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/04—Maintaining the quality of display appearance
- G09G2320/043—Preventing or counteracting the effects of ageing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
Abstract
【解決手段】画素101の基板には、露光処理により第1の金属層M1と第2の金属層M2とが下から積層されている。左図のAが、従来の画素101のレイアウト例である。右図のBが、本発明が適用される画素101のレイアウト例である。枠52に示されるように、ソース31s側の第2の金属層M2のうち、ゲート31gを形成している第1の金属層M1と重なっている部分の面積は、本発明(右図のB)の方が従来(左図のA)よりも小さくなっている。よって、フィールドスルー電圧降下量が従来の画素よりも小さくなりひいては、画素の各輝度のバラつき度合いも減少させることができるのである。本発明は、例えばELパネルに適用可能である。
【選択図】図17
Description
図13のAの基板、即ち、従来の基板では、ドレイン31d側の第2の金属層M2と、ソース31s側の第2の金属層M2とは、長方形の長辺とL字の長線部分とがほぼ同一の長さとなるように形成されている。
と、ELパネル全体を1つの画像として視るユーザにとっては、ムラが生じていると視認してしまうという問題、即ち、[発明が解決しようとする課題]の欄で説明した問題が生じてしまうのである。
Claims (4)
- ダイオード特性を有し、駆動電流に応じて発光する発光素子と、
映像信号をサンプリングするサンプリング用トランジスタと、
前記駆動電流を前記発光素子に供給する駆動用トランジスタと、
前記発光素子のアノード側と前記駆動用トランジスタのゲートに接続され、所定の電位を保持する保持容量と
を備え、
前記サンプリング用トランジスタのゲートとして機能する第1の金属層と、前記サンプリング用トランジスタのソースとして機能する第2の金属層とのうちの積層される部分が、所定の面積以下に形成されている
電子回路。 - 前記第2の金属層には、さらに、前記サンプリング用トランジスタのドレインとして機能する第1部分が、前記サンプリング用トランジスタのソースとして機能する第2部分とは離間して形成されており、
前記第2部分は、前記第1部分と対向している線の長さが一定以下になるように形成されている
請求項1に記載の電子回路。 - ダイオード特性を有し、駆動電流に応じて発光する発光素子と、
映像信号をサンプリングするサンプリング用トランジスタと、
前記駆動電流を前記発光素子に供給する駆動用トランジスタと、
前記発光素子のアノード側と前記駆動用トランジスタのゲートに接続され、所定の電位を保持する保持容量と
を有する画素回路
を含むパネルであって、
前記画素回路においては、
前記サンプリング用トランジスタのゲートとして機能する第1の金属層と、前記サンプリング用トランジスタのソースとして機能する第2の金属層とのうちの積層される部分が、所定の面積以下に形成されている
パネル。 - 前記第2の金属層には、さらに、前記サンプリング用トランジスタのドレインとして機能する第1部分が、前記サンプリング用トランジスタのソースとして機能する第2部分とは離間して形成されており、
前記第2部分は、前記第1部分と対向している線の長さが一定以下になるように形成されている
請求項3に記載のパネル。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008142438A JP2009288625A (ja) | 2008-05-30 | 2008-05-30 | 電子回路およびパネル |
US12/385,497 US20090295690A1 (en) | 2008-05-30 | 2009-04-09 | Electronic circuit and panel having the same |
TW098112540A TWI413964B (zh) | 2008-05-30 | 2009-04-15 | 電子電路及具有其之面板 |
KR1020090045323A KR20090124945A (ko) | 2008-05-30 | 2009-05-25 | 전자회로 및 패널 |
CN200910142706.0A CN101593488B (zh) | 2008-05-30 | 2009-05-31 | 电子电路及具有电子电路的面板 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008142438A JP2009288625A (ja) | 2008-05-30 | 2008-05-30 | 電子回路およびパネル |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2009288625A true JP2009288625A (ja) | 2009-12-10 |
Family
ID=41379151
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008142438A Pending JP2009288625A (ja) | 2008-05-30 | 2008-05-30 | 電子回路およびパネル |
Country Status (5)
Country | Link |
---|---|
US (1) | US20090295690A1 (ja) |
JP (1) | JP2009288625A (ja) |
KR (1) | KR20090124945A (ja) |
CN (1) | CN101593488B (ja) |
TW (1) | TWI413964B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103606159B (zh) * | 2013-11-28 | 2017-06-13 | 广东威创视讯科技股份有限公司 | 一种拼接墙分析方法和系统 |
CN103927988B (zh) * | 2014-04-03 | 2016-03-30 | 深圳市华星光电技术有限公司 | 一种oled显示器的阵列基板 |
KR20180049843A (ko) * | 2016-11-03 | 2018-05-14 | 삼성디스플레이 주식회사 | 표시 기판 및 이를 포함하는 표시 장치 |
JP6822450B2 (ja) * | 2018-08-13 | 2021-01-27 | セイコーエプソン株式会社 | 発光装置、および電子機器 |
Citations (7)
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JPS6482674A (en) * | 1987-09-25 | 1989-03-28 | Casio Computer Co Ltd | Thin film transistor |
JP2002190605A (ja) * | 2000-10-12 | 2002-07-05 | Sanyo Electric Co Ltd | トランジスタ及びそれを備える表示装置 |
JP2003188388A (ja) * | 2001-12-21 | 2003-07-04 | Sony Corp | Fetの素子構造 |
JP2004093682A (ja) * | 2002-08-29 | 2004-03-25 | Toshiba Matsushita Display Technology Co Ltd | El表示パネル、el表示パネルの駆動方法、el表示装置の駆動回路およびel表示装置 |
JP2005175248A (ja) * | 2003-12-12 | 2005-06-30 | Sanyo Electric Co Ltd | フィールドシーケンシャル方式液晶表示装置 |
JP2005354053A (ja) * | 2004-06-08 | 2005-12-22 | Samsung Sdi Co Ltd | 有機薄膜トランジスタ及びそれを備える平板表示装置 |
JP2006259126A (ja) * | 2005-03-16 | 2006-09-28 | Casio Comput Co Ltd | 発光駆動回路及び表示装置 |
Family Cites Families (11)
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US6067062A (en) * | 1990-09-05 | 2000-05-23 | Seiko Instruments Inc. | Light valve device |
CN1377495A (zh) * | 1999-10-04 | 2002-10-30 | 松下电器产业株式会社 | 显示面板的驱动方法、显示面板的亮度校正装置及其驱动装置 |
JP3956347B2 (ja) * | 2002-02-26 | 2007-08-08 | インターナショナル・ビジネス・マシーンズ・コーポレーション | ディスプレイ装置 |
JP4195337B2 (ja) * | 2002-06-11 | 2008-12-10 | 三星エスディアイ株式会社 | 発光表示装置及びその表示パネルと駆動方法 |
JP4443179B2 (ja) * | 2003-09-29 | 2010-03-31 | 三洋電機株式会社 | 有機elパネル |
JP4180018B2 (ja) * | 2003-11-07 | 2008-11-12 | 三洋電機株式会社 | 画素回路及び表示装置 |
TW200540774A (en) * | 2004-04-12 | 2005-12-16 | Sanyo Electric Co | Organic EL pixel circuit |
JP2006039456A (ja) * | 2004-07-30 | 2006-02-09 | Oki Electric Ind Co Ltd | パネル表示装置の駆動回路およびパネル表示装置の駆動方法 |
EP1879170A1 (en) * | 2006-07-10 | 2008-01-16 | THOMSON Licensing | Current drive for light emitting diodes |
US20080106500A1 (en) * | 2006-11-03 | 2008-05-08 | Ihor Wacyk | Amolded direct voltage pixel drive for minaturization |
JP4415983B2 (ja) * | 2006-11-13 | 2010-02-17 | ソニー株式会社 | 表示装置及びその駆動方法 |
-
2008
- 2008-05-30 JP JP2008142438A patent/JP2009288625A/ja active Pending
-
2009
- 2009-04-09 US US12/385,497 patent/US20090295690A1/en not_active Abandoned
- 2009-04-15 TW TW098112540A patent/TWI413964B/zh not_active IP Right Cessation
- 2009-05-25 KR KR1020090045323A patent/KR20090124945A/ko not_active Application Discontinuation
- 2009-05-31 CN CN200910142706.0A patent/CN101593488B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6482674A (en) * | 1987-09-25 | 1989-03-28 | Casio Computer Co Ltd | Thin film transistor |
JP2002190605A (ja) * | 2000-10-12 | 2002-07-05 | Sanyo Electric Co Ltd | トランジスタ及びそれを備える表示装置 |
JP2003188388A (ja) * | 2001-12-21 | 2003-07-04 | Sony Corp | Fetの素子構造 |
JP2004093682A (ja) * | 2002-08-29 | 2004-03-25 | Toshiba Matsushita Display Technology Co Ltd | El表示パネル、el表示パネルの駆動方法、el表示装置の駆動回路およびel表示装置 |
JP2005175248A (ja) * | 2003-12-12 | 2005-06-30 | Sanyo Electric Co Ltd | フィールドシーケンシャル方式液晶表示装置 |
JP2005354053A (ja) * | 2004-06-08 | 2005-12-22 | Samsung Sdi Co Ltd | 有機薄膜トランジスタ及びそれを備える平板表示装置 |
JP2006259126A (ja) * | 2005-03-16 | 2006-09-28 | Casio Comput Co Ltd | 発光駆動回路及び表示装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20090124945A (ko) | 2009-12-03 |
TW200951921A (en) | 2009-12-16 |
CN101593488A (zh) | 2009-12-02 |
CN101593488B (zh) | 2012-07-18 |
US20090295690A1 (en) | 2009-12-03 |
TWI413964B (zh) | 2013-11-01 |
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