JP2009267054A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP2009267054A
JP2009267054A JP2008114300A JP2008114300A JP2009267054A JP 2009267054 A JP2009267054 A JP 2009267054A JP 2008114300 A JP2008114300 A JP 2008114300A JP 2008114300 A JP2008114300 A JP 2008114300A JP 2009267054 A JP2009267054 A JP 2009267054A
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Japan
Prior art keywords
lead
semiconductor element
connection plate
metal connection
semiconductor device
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Pending
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JP2008114300A
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English (en)
Japanese (ja)
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JP2009267054A5 (enrdf_load_stackoverflow
Inventor
Masakazu Watanabe
昌和 渡辺
Masahiro Hatauchi
政弘 畑内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanto Sanyo Semiconductors Co Ltd
Sanyo Electric Co Ltd
System Solutions Co Ltd
Original Assignee
Kanto Sanyo Semiconductors Co Ltd
Sanyo Electric Co Ltd
Sanyo Semiconductor Co Ltd
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Publication date
Application filed by Kanto Sanyo Semiconductors Co Ltd, Sanyo Electric Co Ltd, Sanyo Semiconductor Co Ltd filed Critical Kanto Sanyo Semiconductors Co Ltd
Priority to JP2008114300A priority Critical patent/JP2009267054A/ja
Publication of JP2009267054A publication Critical patent/JP2009267054A/ja
Publication of JP2009267054A5 publication Critical patent/JP2009267054A5/ja
Pending legal-status Critical Current

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)
JP2008114300A 2008-04-24 2008-04-24 半導体装置およびその製造方法 Pending JP2009267054A (ja)

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012033756A (ja) * 2010-07-30 2012-02-16 On Semiconductor Trading Ltd 半導体装置およびその製造方法
WO2014006682A1 (ja) * 2012-07-02 2014-01-09 三菱電機株式会社 半導体装置及びその製造方法
US9252086B2 (en) 2012-01-12 2016-02-02 Fuji Electric Co., Ltd. Connector and resin-sealed semiconductor device
JP2016195189A (ja) * 2015-03-31 2016-11-17 新電元工業株式会社 半導体装置の製造方法及び半導体装置の製造装置
WO2018235330A1 (ja) * 2017-06-20 2018-12-27 住友電気工業株式会社 半導体装置
US11367675B2 (en) 2020-03-16 2022-06-21 Kabushiki Kaisha Toshiba Method for manufacturing semiconductor device including a semiconductor chip and lead frame
CN115117005A (zh) * 2021-03-22 2022-09-27 株式会社东芝 半导体装置
US11499819B2 (en) 2020-03-16 2022-11-15 Kabushiki Kaisha Toshiba Shape measurement method and shape measuring device
JP7602095B2 (ja) 2021-08-26 2024-12-17 ヴィシャイ ジェネラル セミコンダクター,エルエルシー 電気部品の熱管理を強化改善した冷却効果強化パッケージ

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02121356A (ja) * 1988-09-09 1990-05-09 Motorola Inc 半導体デバイス
JP2001339028A (ja) * 2000-05-26 2001-12-07 Toshiba Components Co Ltd コネクター型半導体素子
JP2002076195A (ja) * 2000-09-04 2002-03-15 Sanyo Electric Co Ltd Mosfetの実装構造およびその製造方法
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JP2012033756A (ja) * 2010-07-30 2012-02-16 On Semiconductor Trading Ltd 半導体装置およびその製造方法
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JP5532147B1 (ja) * 2012-07-02 2014-06-25 三菱電機株式会社 半導体装置及びその製造方法
JP2016195189A (ja) * 2015-03-31 2016-11-17 新電元工業株式会社 半導体装置の製造方法及び半導体装置の製造装置
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JPWO2018235330A1 (ja) * 2017-06-20 2020-04-16 住友電気工業株式会社 半導体装置
US11069603B2 (en) 2017-06-20 2021-07-20 Sumitomo Electric Industries, Ltd. Semiconductor device
WO2018235330A1 (ja) * 2017-06-20 2018-12-27 住友電気工業株式会社 半導体装置
US11367675B2 (en) 2020-03-16 2022-06-21 Kabushiki Kaisha Toshiba Method for manufacturing semiconductor device including a semiconductor chip and lead frame
US11499819B2 (en) 2020-03-16 2022-11-15 Kabushiki Kaisha Toshiba Shape measurement method and shape measuring device
CN115117005A (zh) * 2021-03-22 2022-09-27 株式会社东芝 半导体装置
JP2022146340A (ja) * 2021-03-22 2022-10-05 株式会社東芝 半導体装置
JP7621847B2 (ja) 2021-03-22 2025-01-27 株式会社東芝 半導体装置
JP7602095B2 (ja) 2021-08-26 2024-12-17 ヴィシャイ ジェネラル セミコンダクター,エルエルシー 電気部品の熱管理を強化改善した冷却効果強化パッケージ
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