CN115117005A - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN115117005A
CN115117005A CN202111588727.2A CN202111588727A CN115117005A CN 115117005 A CN115117005 A CN 115117005A CN 202111588727 A CN202111588727 A CN 202111588727A CN 115117005 A CN115117005 A CN 115117005A
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CN
China
Prior art keywords
face
lead frame
connection
connector
semiconductor device
Prior art date
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Pending
Application number
CN202111588727.2A
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English (en)
Inventor
山口翔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Original Assignee
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Publication date
Application filed by Toshiba Corp, Toshiba Electronic Devices and Storage Corp filed Critical Toshiba Corp
Publication of CN115117005A publication Critical patent/CN115117005A/zh
Pending legal-status Critical Current

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Abstract

根据一个实施方式，一种半导体装置(10)包括第一引线框(22)、第二引线框(23A；23B)、半导体芯片(21)和导电部件(24A；24B)。第二引线框与第一引线框分离。第二引线框包括第一面(F1)和与第一面相交的第二面(F2)。半导体芯片连接到第一引线框。导电部件电连接半导体芯片和第二引线框。导电部件包括第一连接部(31)和第二连接部(25)。第一连接部包括通过导电粘合剂连接到第一面的第一连接面(26)。第二连接部包括通过导电粘合剂连接到第二面的第二连接面(27)。

Description

半导体装置
技术领域
概括地说，本文描述的实施方式涉及半导体装置。
背景技术
存在一种已知的半导体装置，其中通过例如板连接器来电连接引线框和半导体芯片的电极。电极和连接器之间以及引线框和连接器之间，通过焊料那样的导电粘合剂进行电气和机械连接。
发明内容
在通过使用铅焊料将硅(Si)芯片键合到引线框和铜(Cu)连接器上，并通过成型将它们密封而制造的半导体封装的键合工艺中，使用回流焊炉。
由于熔融焊料的表面张力，回流工艺中的铜连接器有时会发生移动或转动。就焊点的可靠性而言，发生基准值以上的位置偏差可能导致产品有缺陷的问题。
根据实施方式的半导体装置包括第一引线框、第二引线框、半导体芯片和导电部件。第二引线框与第一引线框分离。第二引线框包括第一面和与第一面相交的第二面。半导体芯片连接到第一引线框。导电部件电连接半导体芯片和第二引线框。导电部件包括第一连接部和第二连接部。第一连接部包括通过导电粘合剂连接到第一面的第一连接面。第二连接部包括通过导电粘合剂连接到第二面的第二连接面。
附图说明
图1是根据第一实施方式的半导体装置的外观正面图；
图2是第一实施方式中的半导体装置的外观侧视图；
图3是第一实施方式中的半导体装置的外观背面图；
图4是从底面一侧观察的半导体装置的外观立体图；
图5是从顶面一侧观察的半导体装置的外观立体图；
图6是在成型前的第一实施方式中的半导体装置的前视图；
图7是在成型前的第一实施方式中的半导体装置的侧视图；
图8是在成型前的第一实施方式中的半导体装置的俯视图；
图9是在成型前的第一实施方式中的半导体装置的背视图；
图10是从底面一侧观察的在成型前的第一实施方式的半导体装置的立体图；
图11是从顶面一侧观察的在成型前的第一实施方式的半导体装置的立体图；
图12A和图12B是用于描述在成型前的传统半导体装置的问题的图；
图13是第一实施方式中的金属连接器的背视图；
图14是第一实施方式中的金属连接器的侧视图；
图15A和图15B是用于描述根据第二实施方式的半导体装置的图。
具体实施方式
接下来，将参考附图来描述实施方式。
第一实施方式
将描述第一实施方式。应当注意，在本文中可以以多种形式来表达根据该实施方式及其描述的结构元件。这些结构元件及其描述仅通过示例的方式来呈现，并不旨在限制本发明的保护范围。可以通过与本文所使用的名称不同的名称来指定这些结构元件。此外，可以以与本文所使用的表达不同的表达来描述这些结构元件。
图1是根据第一实施方式的半导体装置的外观正面图。图2是第一实施方式中的半导体装置的外观侧视图。例如，将半导体装置10组装为功率器件(功率晶体管)。应当注意，半导体装置10并不限于这样的示例，其还可以组装为另一种器件。
如各个附图中所示，为方便起见，在本说明书中定义了X轴、Y轴和Z轴。X轴、Y轴和Z轴彼此正交。沿半导体装置10的宽度设置X轴。沿半导体装置10的长度(或进深)设置Y轴。沿半导体装置10的厚度设置Z轴。
另外，定义了X方向、Y方向和Z方向。X方向是沿着X轴的方向，其包括X轴的箭头所示的+X方向和X轴箭头的相反方向的-X方向。Y方向是沿着Y轴的方向，其包括Y轴的箭头所示的+Y方向和Y轴箭头的相反方向的-Y方向。Z方向是沿着Z轴的方向，其包括Z轴的箭头所示的+Z方向和Z轴箭头的相反方向的-Z方向。
如图1中所示，半导体装置10包括树脂成型件(mold)11、第1连接器12、第2连接器13、第3连接器14和第4连接器15。
在上面所描述的构造中，树脂成型件11将第1连接器12到第4连接器15的一部分、以及将在后面进行描述的半导体芯片、第一引线框的一部分、第二引线框和第三引线框密封。
第1连接器12和第2连接器13用作第二引线框。第3连接器14和第4连接器15构成第一引线框的一部分。将第1连接器12设置为从树脂成型件11先沿+X方向延伸，然后逐渐沿+X方向和-Z方向延伸，最后沿+X方向延伸。与第1连接器12一样，将第2连接器13设置为从树脂成型件11先沿+X方向延伸，然后逐渐沿+X方向和-Z方向延伸，最后沿+X方向延伸。将第3连接器14设置为从树脂成型件11沿+X方向延伸。将第4连接器15设置为从树脂成型件11沿-X方向延伸。
图3是第一实施方式中的半导体装置的外观背面图。第4连接器15用作如上所述的引线框。如图3中所示，从树脂成型件11中露出第4连接器15以用于如后面所描述的半导体芯片的散热。
图4是从底面一侧观察的半导体装置的外观立体图。图5是从顶面一侧观察的半导体装置的外观立体图。如图5中所示，将第4连接器15设置为从树脂成型件11的顶面一侧(-X方向侧)突出。如图4中所示，第1连接器12、第2连接器13和第3连接器14从树脂成型件11的底面一侧(+X方向侧)突出。在这种情况下，半导体装置10是表面安装型，因此将第1连接器12、第2连接器13和第3连接器14的突出端设计为使得它们的待键合面(-Z方向上的端面)实质上位于同一X-Y平面上。
图6是第一实施方式中的半导体装置在成型前的前视图。半导体装置10包括其上安装有半导体芯片21的第一引线框22。
在这种情况下，在半导体芯片21的正面侧(+Z方向侧)的表面上设置栅极端子TG和源极端子TS。在半导体芯片21的背面侧，设置未图示的漏极端子。半导体芯片21的漏极端子通过用作导电粘合剂的铅焊料，电连接到第一引线框22。
结果，半导体芯片21机械地固定到第一引线框22，从而变成规定的导热状态。这使得半导体芯片21能够通过第一引线框22散发其热量。
第一引线框22的一端(在图6的情况下为右端)构成用作漏极端子TD的第3连接器14。类似地，第一引线框22的另一端(在图6的情况下为左端)构成用作漏极端子TD的第4连接器15。
用作导电部件的金属(Cu)连接器24A，通过用作导电粘合剂的铅焊料电连接到半导体芯片21的栅极端子TG。类似地，用作导电部件的金属(Cu)连接器24B，通过用作导电粘合剂的铅焊料电连接到半导体芯片21的源极端子TS。
在这种情况下，从图6所示的正面来看，金属连接器24A和金属连接器24B之间具有线对称形状，并且包括相同的结构元件。
图7是第一实施方式中的半导体装置在成型前的侧视图。图8是第一实施方式中的半导体装置在成型前的俯视图。图9是第一实施方式中的半导体装置的成型前的背视图。图10是从底面一侧观察的第一实施方式的半导体装置在成型前的立体图。图11是从顶面一侧观察的第一实施方式的半导体装置在成型前的立体图。
如图7和图8中所示，金属连接器24A包括连接部31、延伸部32、臂部33和连接部34，它们在-X方向上朝向设置半导体芯片21的栅极端子TG的位置进行布置。金属连接器24A具有近似的S形状。连接部31具有矩形形状，并且在背面侧(-Z方向)包括第一连接面26。延伸部32具有如图6中所示的近似梯形形状。延伸部32从连接部31沿X-Y平面在-X方向和+Y方向上延伸并逐渐变窄并且连接到臂部33。
延伸部32具有与连接部31大致平行(沿X-Y平面)的板状形状，并设置在与连接部31在-Z方向错开的位置。在连接部31与延伸部32之间，设置有通过例如弯曲加工形成的弯曲部25。弯曲部25在延伸部32的边缘与连接部31的边缘之间沿-Z方向延伸。
臂部33连接到连接部34并且沿-X方向和-Z方向逐渐延伸以到达栅极端子TG侧。连接部34在其背面侧(-Z方向侧)具有与栅极端子TG机械连接且电连接的连接面28。
在上面所描述的结构中，金属连接器24A的连接部34的连接面28通过用作导电粘合剂的铅焊料电连接到栅极端子TG。在连接部31的背面侧(-Z方向侧)，设置有第二引线框23A。第二引线框23A包括第一面F1和与第一面F1相交的第二面F2。第二引线框与第一引线框22分离。例如，第一面F1是指朝向+Z方向的大致平面。例如，第二面F2是指朝向-X方向的大致平面。在这种情况下，沿X-Y平面设置第一面F1。
金属连接器24A的连接部31的第一连接面26通过用作导电粘合剂的铅焊料，机械连接并且电连接到第二引线框23A的第一面F1。连接部31用作第一连接部。在金属连接器24A中，作为包括第二连接面27的第二连接部的弯曲部25，通过用作导电粘合剂的铅焊料机械连接并且电连接到第二引线框23A的第二面F2。由此，金属连接器24A将半导体芯片21和第二引线框23A电连接。
在这种情况下，金属连接器24A的第二连接面27和第二引线框23A的第二面F2都在与第一引线框22的安装面(沿X-Y平面)相交的相同方向上延伸，其中半导体芯片21安装(或连接)在该安装面上，也就是说，两个面27和F2沿Y-Z平面延伸。此外，如图7中所示，金属连接器24A的第二连接面27面对第二引线框23A的第二面F2的至少一部分。因此，可以抑制回流工艺中金属连接器24A的转动。
此外，以连接到连接部31的方式设置弯曲部25，其中连接部31充当用作导电部件的金属连接器24A的第一连接部。因此，可以将回流工艺中的金属连接器24A的转动抑制到最小。在作为导电部件的第一连接部的连接部31与半导体芯片21之间设置弯曲部25，使得弯曲部25起到抑制金属连接器24A相对于半导体芯片21的位置偏差的作用。
类似于金属连接器24A，金属连接器24B包括连接部31、延伸部32、臂部33和连接部34，它们在-X方向上朝向设置半导体芯片21的源极端子TS的位置进行布置，如图6中所示。金属连接器24B具有近似的S形状。金属连接器24B的连接部31具有矩形形状，并且在沿着X-Y平面的背面侧(-Z方向)包括第一连接面26，如同金属连接器24A的连接部31(图7)。金属连接器24B的延伸部32具有如图6中所示的近似梯形形状，并从连接部31沿X-Y平面在-X方向和-Y方向上延伸并逐渐变窄，并且连接到臂部33。
类似于金属连接器24A的延伸部32(图7)，金属连接器24B的延伸部32具有与连接部31大致平行(沿X-Y平面)的板状形状，并设置在与连接部31在-Z方向错开的位置。在连接部31与延伸部32之间，设置有通过例如弯曲工艺形成的弯曲部25。弯曲部25在延伸部32的边缘与连接部31的边缘之间沿-Z方向延伸。
金属连接器24B的臂部33沿-X方向和-Z方向逐渐延伸以到达源极端子TS侧，并且连接到连接部34。金属连接器24B的连接部34在其背面侧(-Z方向侧)具有与源极端子TS机械连接且电连接的连接面28。
在上面所描述的结构中，金属连接器24B的连接部34的连接面28通过用作导电粘合剂的铅焊料电连接到源极端子TS。在连接部31的背面侧(-Z方向侧)，设置有第二引线框23B。第二引线框23B包括第一面F1和与第一面F1相交的第二面F2。第二引线框23B与第一引线框22分离。在这种情况下，沿X-Y平面设置第一面F1。金属连接器24B的连接部31的第一连接面26通过用作导电粘合剂的铅焊料，机械连接到并且电连接到第二引线框23B的第一面F1。连接部31用作第一连接部。在金属连接器24B中，作为包括第二连接面27的第二连接部的弯曲部25，通过用作导电粘合剂的铅焊料机械连接到并且电连接到第二引线框23B的第二面F2。由此，金属连接器24B将半导体芯片21和第二引线框23B电连接。
在这种情况下，金属连接器24B的第二连接面27和第二引线框23B的第二面F2都在与第一引线框22的安装面(沿X-Y平面进行设置)相交的相同方向上延伸，其中半导体芯片21安装(或连接)在该安装面上，也就是说，两个面27和F2沿Y-Z平面延伸。此外，金属连接器24B的第二连接面27面对第二引线框23B的第二面F2的至少一部分。因此，可以抑制回流工艺中金属连接器24B的转动。
如图9至图11中所示，以连接到第二引线框23A的方式设置第1连接器12。类似地，以连接到第二引线框23B的方式设置第2连接器13。
如图9中所示，在第一引线框22的右端和左端(+X方向和-X方向)，分别设置有第3连接器14和第4连接器15。
下面将描述该实施方式所带来的优点。首先，将描述传统情况下的问题。图12A和图12B是用于描述传统半导体装置在成型之前的问题的图。在图12A和图12B中，与图6中的部件相同的部件使用相同的附图标记。图12A是传统半导体装置在成型之前的前视图。图12B是传统半导体装置在成型之前的侧视图。
如图12A中所示，传统的金属连接器24AP包括连接部31、臂部33和连接部34。连接部31包括设置在其背面侧的连接面31A。以连接到连接部31的方式设置臂部33，并且臂部33从连接部31朝向栅极端子侧进行延伸。连接部34包括设置在其背面侧上的连接面28。
在上面所描述的结构中，金属连接器24AP的连接部34位于通过用作导电粘合剂的铅焊料来电连接到栅极端子的位置。连接部31在其背面侧包括第二引线框23A，其中第二引线框23A具有第一面和与第一面相交的第二面。第二引线框23A与第一引线框22分离。
连接部31的连接面31A位于通过用作导电粘合剂的铅焊料与第二引线框23A的第一面电连接的位置。这里，对于金属连接器24AP，假设当通过冲压机执行一次的工作进行冲压和弯曲加工时，在区域AR中产生向下延伸的溢料(burr)BR，如图12B所示。
在这种状态之后，假设在栅极端子和第二引线框23A上涂覆了用于回流的铅焊膏的状态下，以如图12A中所示状态载置金属连接器24AP，并执行回流工艺。
当铅焊膏通过回流工艺达到熔融状态时，由于熔融铅焊料的表面张力，向金属连接器24AP施加移动力或转动力。在施加转动力的情况下，金属连接器24AP可能相对于溢料BR的接触部分沿X-Y平面进行转动，如图12A中的箭头所示，发生了位置偏差。
在这种情况下，发生等于或大于基准值的位置偏差，可能导致例如金属连接器24AP和金属连接器24BP的接触，这导致具有缺陷的半导体装置10P。
图13是第一实施方式中的金属连接器的背视图。图14是第一实施方式中的金属连接器的侧视图。与上述的传统情况相比，在根据上述第一实施方式的金属连接器24A中，连接部31的第一连接面26位于面对第二引线框23A的第一面F1的位置处，并且弯曲部25的第二连接面27通过用作导电粘合剂的铅焊料，位于面对第二引线框23A的第二面F2的位置。
当作为导电部件的金属连接器24A沿着半导体芯片的连接面(安装面)转动时，弯曲部25的第二连接面27和第二引线框23A的第二面F2彼此抵接或者隔着铅焊料彼此间接地抵接，从而限制进一步的转动。将第二连接面27和第二面F2之间的间隙距离设定为使得金属连接器24A的转动量变得等于或小于规定的允许值(位置偏差变得等于或小于规定的允许值)。
结果，即使形成如图12B中所示的溢料，并且第一实施方式的金属连接器24A在回流工艺中围绕该溢料转动，弯曲部25的第二连接面27也直接与第二引线框23A的第二面F2抵接，或者隔着铅焊料间接地与第二引线框23A的第二面F2抵接。因此，可以抑制金属连接器24A的移动和转动。
此外，如图14中所示，通过在毛细作用下在弯曲部25的第二连接面27和第二引线框23A的第二面F2之间渗透的熔融焊料的表面张力，将金属连接器24A的第二连接面27拉向第二引线框23A的第二面F2一侧，从而抑制金属连接器24A的移动和转动，并通过用作将进行电连接的导电粘合剂的铅焊料SOL来键合到预定位置。
与此同时，金属连接器24A的连接部34通过用作导电粘合剂的铅焊料，电连接到栅极端子TG的预定位置。这对于金属连接器24B也是一样的。
如上所述，第一实施方式使得可以在不改变制造工艺的情况下，控制金属连接器24A和金属连接器24B在回流工艺中的动作，并且抑制金属连接器的键合位置的偏差。
此外，如图14中所示，金属连接器24A在彼此相交的第一面F1和第二面F2上(在图14的情况下，在X-Z平面上正交)，键合到第二引线框23A(金属连接器24B键合到第二引线框23B)。另外，在弯曲部25中通过在第二引线框23A(23B)的整个宽度(图6的上下方向)施加用作导电粘合剂的铅焊料的状态下进行键合。因此，可以增强金属连接器24A(24B)的抗裂性。
第二实施方式
接下来，将描述第二实施方式。图15A和图15B是用于描述根据第二实施方式的半导体装置的图。图15A是半导体装置在成型之前的正面图。在图15A中，与图6中的部件相同的部件使用相同的附图标记。图15B是根据第二实施方式的金属连接器的侧视图。
半导体装置10A包括连接(安装)半导体芯片21的第一引线框22。用作导电部件的金属(Cu)连接器40A，通过用作导电粘合剂的铅焊料电连接到半导体芯片21的栅极端子TG。
类似地，用作导电部件的金属(Cu)连接器40B通过用作导电粘合剂的铅焊料，电连接到半导体芯片21的源极端子TS。在这种情况下，如图15A中所示，金属连接器40A和金属连接器40B之间具有线对称形状，并且包括相同的结构元件。
例如，在连接部31的与臂部33相反侧的边缘上，设置通过弯曲加工形成的弯曲部41。在第二实施方式中，以连接到连接部31的方式来设置臂部33，省略了连接部31与臂部33之间的延伸部32以及延伸部32与连接部31之间的弯曲部25。然而，应当注意，在第二实施方式中，也可以在金属连接器40A和金属连接器40B设置延伸部32和弯曲部25。
第二实施方式中的第二引线框23A和第二引线框23B均包括与第一面F1相交的第二面F2A。第二面F2A设置在第一实施方式的第二面F2的相反侧。
如上所述，在根据第二实施方式的金属连接器40A中，作为第一连接部的连接部31的第一连接面26位于面对第二引线框23A的第一面F1的位置处，并且弯曲部41的第二连接面42通过作为导电粘合剂的铅焊料位于面向第二引线框23A的第二面F2A的位置处。此外，以连接到连接部31的方式设置弯曲部41，其中连接部31作为用作导电部件的金属连接器40A的第一连接部。因此，可以将回流工艺中的金属连接器40A的转动抑制到最小。
弯曲部41的第二连接面42和第二引线框23A的第二面F2A都在与第一引线框22的安装面(沿X-Y平面)相交的相同方向上延伸，其中半导体芯片21安装(或连接)在该安装面上，也就是说，两个面42和F2A沿Y-Z平面延伸。此外，弯曲部41的第二连接面42面对第二引线框23A的第二面F2A的至少一部分。因此，可以抑制回流工艺中金属连接器40A的转动。
结果，即使形成如图12B中所示的溢料，并且第二实施方式的金属连接器40A在回流工艺中围绕该溢料转动，弯曲部41的第二连接面42也与第二引线框23A的第二面F2A抵接。因此，可以抑制金属连接器40A的移动和转动。
此外，如图15B中所示，通过在毛细作用下在弯曲部41的第二连接面42和第二引线框23A的第二面F2A之间渗透的熔融焊料的表面张力，将金属连接器40A的第二连接面42拉向第二引线框23A的第二面F2A一侧，从而抑制金属连接器40A的移动和转动，并通过用作将进行电连接的导电粘合剂的铅焊料SOL来键合到预定位置。
与此同时，金属连接器40A的连接部34通过用作导电粘合剂的铅焊料，电连接到栅极端子TG的预定位置。这对于金属连接器40B也是一样的。
如上所述，第二实施方式使得可以在不改变制造工艺的情况下，控制金属连接器40A和金属连接器40B在回流工艺中的动作，并且抑制金属连接器的键合位置的偏差。
此外，如图15B中所示，金属连接器40A在彼此相交的第一面F1和第二面F2A上(在图15B的情况下，在X-Z平面上正交)，键合到第二引线框23A(金属连接器40B键合到第二引线框23B)。另外，通过在弯曲部41的整个宽度(图15A中示出的+Y方向和-Y方向)施加用作导电粘合剂的铅焊料的状态下进行键合。因此，可以增强金属连接器40A(40B)的抗裂性。
虽然已经描述了某些实施方式，但是这些实施方式仅仅是通过示例的方式给出，并不旨在限制本发明的保护范围。实际上，本文描述的新颖实施方式可以以多种其它形式来体现；此外，在不脱离本发明的精神的情况下，可以对本文所描述的实施方式的形式进行各种省略、替换和改变。所附权利要求及其等同物旨在覆盖落入本发明的保护范围和精神内的这种形式或修改。

Claims (5)

1.一种半导体装置(10)，包括：
第一引线框(22)；
第二引线框(23A；23B)，与所述第一引线框分离，并且包括第一面(F1)和与所述第一面相交的第二面(F2)；
连接到所述第一引线框的半导体芯片(21)；以及
将所述半导体芯片和所述第二引线框点连接的导电部件(24A；24B)，所述导电部件包括第一连接部(31)和第二连接部(25)，所述第一连接部包括通过导电粘合剂连接到所述第一面的第一连接面(26)，所述第二连接部包括通过导电粘合剂连接到所述第二面的第二连接面(27)。
2.根据权利要求1所述的半导体装置，其中，
所述导电部件的所述第二连接面(27)和所述第二引线框的所述第二面(F2)沿相同方向延伸并且彼此面对，所述相同方向与所述第一引线框的连接所述半导体芯片的连接面相交。
3.根据权利要求2所述的半导体装置，其中，
当所述导电部件(24A；24B)沿着所述半导体芯片的连接面转动时，所述导电部件的所述第二连接面(27)和所述第二引线框的所述第二面(F2)通过彼此直接抵接或者通过所述导电粘合剂彼此间接抵接，来限制所述导电部件的进一步转动。
4.根据权利要求1或2所述的半导体装置，其中，
在所述导电部件(24A；24B)中，以连接到所述第一连接部(31)的方式来设置所述第二连接部(25)。
5.根据权利要求4所述的半导体装置，其中，
所述第二连接部(25)设置在所述第一连接部(31)与所述半导体芯片(21)之间。
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