JP2009267054A - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof Download PDF

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Publication number
JP2009267054A
JP2009267054A JP2008114300A JP2008114300A JP2009267054A JP 2009267054 A JP2009267054 A JP 2009267054A JP 2008114300 A JP2008114300 A JP 2008114300A JP 2008114300 A JP2008114300 A JP 2008114300A JP 2009267054 A JP2009267054 A JP 2009267054A
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Japan
Prior art keywords
lead
semiconductor element
connection plate
metal connection
semiconductor device
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JP2008114300A
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Japanese (ja)
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JP2009267054A5 (en
Inventor
Masakazu Watanabe
昌和 渡辺
Masahiro Hatauchi
政弘 畑内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanto Sanyo Semiconductors Co Ltd
Sanyo Electric Co Ltd
System Solutions Co Ltd
Original Assignee
Kanto Sanyo Semiconductors Co Ltd
Sanyo Electric Co Ltd
Sanyo Semiconductor Co Ltd
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Application filed by Kanto Sanyo Semiconductors Co Ltd, Sanyo Electric Co Ltd, Sanyo Semiconductor Co Ltd filed Critical Kanto Sanyo Semiconductors Co Ltd
Priority to JP2008114300A priority Critical patent/JP2009267054A/en
Publication of JP2009267054A publication Critical patent/JP2009267054A/en
Publication of JP2009267054A5 publication Critical patent/JP2009267054A5/ja
Pending legal-status Critical Current

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  • Lead Frames For Integrated Circuits (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To solve the problem that when a metal connection plate fixed by a fixing material is used as a connection means for connecting a semiconductor element and leads, the metal connection plate is deviated and connected due to the surface tension of the fixing material. <P>SOLUTION: This semiconductor device 10 includes: a semiconductor element 18 having an electrode disposed on a main surface; a lead 12A electrically connected to the semiconductor element 18 and partially protruded to the outside; and a metal connection plate 16A fixed to the electrode of the semiconductor element 18 and the lead 12A via fixing materials 32, 34. The metal connection plate 16A on the electrode side of the semiconductor element 18 from the end of the lead 12A protrudes in a thickness direction, thereby forming a protruding portion 28A. By this, even if the surface tension of the molten fixing material 32 acts on the metal connection plate 16A, the protruding portion 28A contacts with the side surface of the lead 12A, thereby suppressing the movement of the metal connection plate 16A. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は半導体装置およびその製造方法に関し、特に、半導体素子の電極とリードとを接続する板状の金属接続板を有する半導体装置およびその製造方法に関する。   The present invention relates to a semiconductor device and a manufacturing method thereof, and more particularly to a semiconductor device having a plate-like metal connection plate for connecting an electrode of a semiconductor element and a lead and a manufacturing method thereof.

図６を参照して、従来型の半導体装置１００の構成を説明する。図６（Ａ）は半導体装置１００の斜視図であり、図６（Ｂ）はその断面図である（特許文献１）。   With reference to FIG. 6, the configuration of a conventional semiconductor device 100 will be described. 6A is a perspective view of the semiconductor device 100, and FIG. 6B is a cross-sectional view thereof (Patent Document 1).

図６（Ａ）を参照して、従来型の半導体装置１００は、アイランド１０１と、アイランド１０１の上面に固着された半導体素子１０３と、リード１０２と、半導体素子１０３とリード１０２とを接続する接続板１０５と、これらの構成要素を一体的に被覆する封止樹脂１０４とを主要に具備している。   6A, a conventional semiconductor device 100 includes an island 101, a semiconductor element 103 fixed to the upper surface of the island 101, a lead 102, and a connection for connecting the semiconductor element 103 and the lead 102. It mainly includes a plate 105 and a sealing resin 104 that integrally covers these components.

アイランド１０１およびリード１０２は、厚みが０．５ｍｍ程度の金属板から形成される。アイランド１０１は、上面に半導体素子１０３が固着可能な大きさであり、その下面は封止樹脂１０４から外部に露出している。また、リード１０２の一端はアイランド１０１に接近し、他端は封止樹脂１０４から外部に露出して外部接続電極として機能している。   The island 101 and the lead 102 are formed from a metal plate having a thickness of about 0.5 mm. The island 101 has such a size that the semiconductor element 103 can be fixed to the upper surface thereof, and the lower surface thereof is exposed to the outside from the sealing resin 104. One end of the lead 102 approaches the island 101, and the other end is exposed to the outside from the sealing resin 104 and functions as an external connection electrode.

半導体素子１０３の上面に配置された電極と、リード１０２とを接続する方法としては、金属細線を用いる方法と、板状の導電板を用いる方法がある。金属細線を用いる方法では、コストが安くなる利点があるものの、径が細い金属細線では電流容量が十分でない場合がある。ここでは、薄い一枚の導電箔から構成された接続板１０５を用いて、半導体素子１０３の電極とリード１０２とを接続している。詳述すると、半導体素子１０３の上面には、２つの取りだし電極が設けられ、２つのリード１０２の各々が、接続板１０５を介して、半導体素子１０３の上面の電極と電気的に接続される。
特開２００２−０７６１９５号公報 As a method for connecting the electrode disposed on the upper surface of the semiconductor element 103 and the lead 102, there are a method using a thin metal wire and a method using a plate-like conductive plate. Although the method using a thin metal wire has the advantage of reducing the cost, the thin metal wire with a small diameter may not have sufficient current capacity. Here, the electrode of the semiconductor element 103 and the lead 102 are connected using a connection plate 105 made of a thin conductive foil. More specifically, two extraction electrodes are provided on the upper surface of the semiconductor element 103, and each of the two leads 102 is electrically connected to the electrode on the upper surface of the semiconductor element 103 via the connection plate 105.
JP 2002-076195 A

しかしながら、上記した半導体装置１００では、接続板１０５が実装時に移動してしまう問題があった。   However, the semiconductor device 100 described above has a problem that the connection plate 105 moves during mounting.

具体的には、図６（Ｂ）を参照して、接続板１０５は半田を介して半導体素子１０３の電極およびリード１０２に固着される。具体的な接続板１０５の固着方法としては、先ず、半導体素子１０３の上面およびリード１０２の上面に半田クリームを塗布し、この半田クリーム上に接続板１０５を載置する。次に、半田クリームを溶融させた後に固化させるリフロー工程を行うことで、半田１０６および半田１０７を介して半田接続板１０５が固着される。   Specifically, referring to FIG. 6B, connection plate 105 is fixed to the electrode of semiconductor element 103 and lead 102 via solder. As a specific method of fixing the connection plate 105, first, solder cream is applied to the upper surface of the semiconductor element 103 and the upper surface of the lead 102, and the connection plate 105 is placed on the solder cream. Next, by performing a reflow process in which the solder cream is melted and then solidified, the solder connection plate 105 is fixed via the solder 106 and the solder 107.

しかしながら、リフロー工程にて溶融した半田１０６および半田１０７により表面張力が発生し、この表面張力により接続板１０５が移動してしまう問題があった。特に、リード１０２側の半田１０６は比較的多量であるので表面張力も大きくなり、紙面上にて右側に接続板１０５が引っ張られて移動してしまう問題があった。接続板１０５が移動して所定の位置からずれて配置されると、半導体装置１００全体の特性に悪影響が出る恐れがある。   However, there is a problem that surface tension is generated by the solder 106 and the solder 107 melted in the reflow process, and the connection plate 105 moves due to the surface tension. In particular, since the solder 106 on the lead 102 side is relatively large, the surface tension increases, and there is a problem that the connecting plate 105 is pulled and moved to the right side on the paper surface. If the connecting plate 105 moves and is displaced from a predetermined position, the characteristics of the entire semiconductor device 100 may be adversely affected.

また、接続板１０５が大きくずれると、接続板１０５が封止樹脂１０４の封止領域から外部にはみ出してしまう恐れもある。この様になると、モールド金型を使用して樹脂封止を行う工程にて、はみ出した接続板１０５がモールド金型に接触してしまい、適切に樹脂封止が行われず、結果的に不良品が発生することとなる。   Further, when the connection plate 105 is largely displaced, the connection plate 105 may protrude from the sealing region of the sealing resin 104 to the outside. In this case, the protruding connecting plate 105 comes into contact with the mold in the step of resin sealing using the mold, and the resin is not properly sealed, resulting in a defective product. Will occur.

本発明は、上述した問題を鑑みて成されたものである。本発明の主な目的は、金属接続板が所定の位置に固着される半導体装置およびその製造方法を提供することにある。   The present invention has been made in view of the above-described problems. A main object of the present invention is to provide a semiconductor device in which a metal connection plate is fixed at a predetermined position and a manufacturing method thereof.

本発明の半導体装置は、主面に電極が配置された半導体素子と、前記半導体素子と電気的に接続されて一部が外部に導出するリードと、前記半導体素子の電極および前記リードに固着材を介して固着された金属接続板とを備え、前記リードの端部よりも前記半導体素子側の前記金属接続板を厚み方向に突出させて突起部を設けることを特徴とする。   A semiconductor device according to the present invention includes a semiconductor element having an electrode disposed on a main surface, a lead that is electrically connected to the semiconductor element and partially leads to the outside, an electrode of the semiconductor element, and a fixing material to the lead And a metal connection plate fixed through a protrusion, and a protrusion is provided by projecting the metal connection plate closer to the semiconductor element than the end of the lead in the thickness direction.

本発明の半導体装置の製造方法は、アイランドの上面に配置された半導体素子の電極と、前記アイランドに一端が接近するリードとを金属接続板にて固着材を介して接続する工程を備えた半導体装置の製造方法であり、前記金属接続板を厚み方向に部分的に突出させた突起部を、前記リードに接触させることを特徴とする。   A method of manufacturing a semiconductor device according to the present invention includes a step of connecting an electrode of a semiconductor element disposed on an upper surface of an island and a lead having one end approaching the island through a fixing material using a metal connecting plate. It is a manufacturing method of an apparatus, characterized in that a protrusion partly protruding the metal connection plate in a thickness direction is brought into contact with the lead.

本発明によれば、半導体素子とリードとを接続させる金属接続板を部分的に厚み方向に突出させて突起部を設けている。従って、半田等の固着材を用いて金属接続板をリードおよび半導体素子に固着させると、この突起部がリードに接触することで、金属接続板の位置が固定される。このことから、金属接続板が所定の位置に配置されるので、半導体素子全体の特性劣化が防止されると共に、封止樹脂が形成される領域からの金属接続板の突出が防止される。   According to the present invention, the metal connection plate for connecting the semiconductor element and the lead is partially projected in the thickness direction to provide the protrusion. Accordingly, when the metal connection plate is fixed to the lead and the semiconductor element by using a fixing material such as solder, the position of the metal connection plate is fixed by the protrusion coming into contact with the lead. Accordingly, since the metal connection plate is disposed at a predetermined position, the characteristic deterioration of the entire semiconductor element is prevented, and the metal connection plate is prevented from protruding from the region where the sealing resin is formed.

本形態では、図１を参照して半導体装置１０の構成を説明する。図１（Ａ）は半導体装置１０の斜視図であり、図１（Ｂ）は図１（Ａ）の断面図である。   In this embodiment, the structure of the semiconductor device 10 will be described with reference to FIG. 1A is a perspective view of the semiconductor device 10, and FIG. 1B is a cross-sectional view of FIG.

図１（Ａ）を参照して、半導体装置１０は、半導体素子１８と、半導体素子１８が実装されるアイランド１４と、半導体素子１８とリード１２Ａ等とを接続する金属接続板１６Ａ等と、これらを一体的に封止する封止樹脂２４とを主要に有する。   Referring to FIG. 1A, a semiconductor device 10 includes a semiconductor element 18, an island 14 on which the semiconductor element 18 is mounted, a metal connection plate 16A that connects the semiconductor element 18 and leads 12A, and the like. And a sealing resin 24 that integrally seals.

半導体素子１８としては、ＭＯＳＦＥＴ（Metal-Oxide Semiconductor Field Effect Transistor）、バイポーラトランジスタ、ＩＧＢＴ（Insulated Gate Bipolar Transistor）、ＩＣ、ダイオード等を採用可能である。例えば、半導体素子１８としてＭＯＳＦＥＴが採用されると、半導体素子１８の上面にゲート電極３０Ｂおよびソース電極３０Ａが設けられ、下面にドレイン電極が設けられる。また、半導体素子１８としてバイポーラトランジスタが採用されると、半導体素子１８の上面にベース電極およびエミッタ電極が設けられ、下面にコレクタ電極が設けられる。半導体素子１８の上面に形成された２つの電極は、各々が金属接続板１６Ａ、１６Ｂを経由してリード１２Ａ、１２Ｂと接続される。半導体素子１８の裏面は、半田等の導電性の固着材を介してアイランド１４の上面に固着される。ここで、半導体素子１８の裏面が電極として機能しない場合は、エポキシ樹脂等を主材料する絶縁性の固着材を介して半導体素子１８がアイランド１４の上面に固着されても良い。   As the semiconductor element 18, a MOSFET (Metal-Oxide Semiconductor Field Effect Transistor), a bipolar transistor, an IGBT (Insulated Gate Bipolar Transistor), an IC, a diode, or the like can be employed. For example, when a MOSFET is employed as the semiconductor element 18, the gate electrode 30B and the source electrode 30A are provided on the upper surface of the semiconductor element 18, and the drain electrode is provided on the lower surface. When a bipolar transistor is employed as the semiconductor element 18, a base electrode and an emitter electrode are provided on the upper surface of the semiconductor element 18, and a collector electrode is provided on the lower surface. The two electrodes formed on the upper surface of the semiconductor element 18 are connected to the leads 12A and 12B via the metal connection plates 16A and 16B, respectively. The back surface of the semiconductor element 18 is fixed to the upper surface of the island 14 via a conductive fixing material such as solder. Here, when the back surface of the semiconductor element 18 does not function as an electrode, the semiconductor element 18 may be fixed to the upper surface of the island 14 through an insulating fixing material mainly made of epoxy resin or the like.

アイランド１４は、厚みが０．５ｍｍ程度の銅等から成る導電箔をエッチング加工または打ち抜き加工することで形成される。アイランド１４の平面的な大きさは、上面に実装される半導体素子１８よりも若干大きい程度である。例えば、アイランド１４の平面的なサイズは５．５ｍｍ×５．５ｍｍ程度である。   The island 14 is formed by etching or punching a conductive foil made of copper or the like having a thickness of about 0.5 mm. The planar size of the island 14 is slightly larger than the semiconductor element 18 mounted on the upper surface. For example, the planar size of the island 14 is about 5.5 mm × 5.5 mm.

タブ２０は、アイランド１４と連続して形成されて、封止樹脂２４の下面および側面から外部に露出する部位である。ここでは、タブ２０は２つの連結部２２を介してアイランド１４と連続しており、タブ２０の下面とアイランド１４の下面は同一平面上に位置している。タブ２０は、半導体装置１０を実装する際に、実装に用いられる半田等の接合材がアイランド１４に良好に溶着されたか否かを判断するために設けられた部位である。即ち、半導体素子１８を実装するときは、アイランド１４の下面と共にタブ２０の下面および側面にも固着材が付着される。そして、タブ２０に付着した固着材が目視にて良好に確認されたら、アイランド１４の下面にも良好に固着材が塗布されたと判断される。   The tab 20 is a portion that is formed continuously with the island 14 and is exposed to the outside from the lower surface and side surfaces of the sealing resin 24. Here, the tab 20 is continuous with the island 14 via the two connecting portions 22, and the lower surface of the tab 20 and the lower surface of the island 14 are located on the same plane. The tab 20 is a portion provided to determine whether or not a bonding material such as solder used for mounting is favorably welded to the island 14 when the semiconductor device 10 is mounted. That is, when the semiconductor element 18 is mounted, the fixing material is attached to the lower surface and side surfaces of the tab 20 as well as the lower surface of the island 14. And if the fixing material adhering to the tab 20 is confirmed satisfactorily by visual observation, it is determined that the fixing material has also been successfully applied to the lower surface of the island 14.

リード１２Ａ等は、アイランド１４と同様の方法により形成され、一端がアイランド１４の近傍に位置し、他端が封止樹脂２４から外部に露出している。ここでは、３本のリード１２Ａ、１２Ｂ、１２Ｃが設けられる。リード１２Ａ、１２Ｂのアイランド１４に接近する方の端部は幅広の接続部２６Ａ、２６Ｂとされている。このように、各リードの先端部を幅広の接続部とすることで、この接続部の上面に半田を介して金属接続板が安定して載置される。   The leads 12A and the like are formed by the same method as that for the island 14, and one end is located in the vicinity of the island 14 and the other end is exposed to the outside from the sealing resin 24. Here, three leads 12A, 12B, and 12C are provided. The ends of the leads 12A and 12B that are close to the island 14 are wide connecting portions 26A and 26B. Thus, by making the tip part of each lead into a wide connection part, the metal connection plate is stably placed on the upper surface of this connection part via solder.

更に、リード１２Ａ、１２Ｂの他端は、封止樹脂２４の側面から外部に露出してガルウイング状に折り曲げ加工され、下面の一部分はアイランド１４の下面と同一平面上に位置している（図１（Ｂ）参照）。また、中央に位置するリード１２Ｃは、アイランド１４から連続して外部に導出しているが、リード１２Ａやリード１２Ｂよりも短く切断されている。このリード１２Ｃは、他のリード１２Ａ等と同様に接続手段として用いられても良いし用いられなくても良い。   Further, the other ends of the leads 12A and 12B are exposed to the outside from the side surface of the sealing resin 24 and bent into a gull wing shape, and a part of the lower surface is located on the same plane as the lower surface of the island 14 (FIG. 1). (See (B)). The lead 12C located at the center is continuously led out from the island 14, but is cut shorter than the lead 12A and the lead 12B. This lead 12C may or may not be used as a connecting means like other leads 12A and the like.

ここでは、アイランド１４に一端が接近する２つのリード１２Ａ、１２Ｂが外部接続端子として機能している。半導体素子１８がディスクリート型のトランジスタである場合は、２つのリード１２Ａ、１２Ｂとアイランド１４の裏面が外部接続端子として機能する。一例として、半導体素子１８がＭＯＳＦＥＴの場合は、リード１２Ａがソース電極３０Ａと接続され、リード１２Ｂがゲート電極３０Ｂと接続され、アイランド１４がドレイン電極と接続される。更に、封止樹脂２４に被覆される部分のリード１２Ａ、１２Ｂ、１２Ｃの上面を部分的に窪ませて溝１３が設けられている。この様に溝１３を設けることにより、この部分と封止樹脂２４との密着する面積が広がり、リード１２Ａ等と封止樹脂２４との密着強度が向上される。   Here, the two leads 12A and 12B having one end approaching the island 14 function as external connection terminals. When the semiconductor element 18 is a discrete transistor, the two leads 12A and 12B and the back surface of the island 14 function as external connection terminals. As an example, when the semiconductor element 18 is a MOSFET, the lead 12A is connected to the source electrode 30A, the lead 12B is connected to the gate electrode 30B, and the island 14 is connected to the drain electrode. Further, the grooves 13 are provided by partially denting the upper surfaces of the leads 12A, 12B, 12C of the portions covered with the sealing resin 24. By providing the groove 13 in this manner, the area where this portion and the sealing resin 24 are in close contact with each other increases, and the adhesive strength between the lead 12A and the like and the sealing resin 24 is improved.

封止樹脂２４は、半導体素子１８、金属接続板１６Ａ、１６Ｂ、リード１２Ａ、１２Ｂ、アイランド１４等を一括して被覆して全体を機械的に支持する機能を有する。封止樹脂２４の材料としては、熱硬化性樹脂または熱可塑性樹脂から成り、放熱性を向上させるために粒子状または繊維状のフィラーが混入されても良い。   The sealing resin 24 has a function of covering the semiconductor element 18, the metal connection plates 16A and 16B, the leads 12A and 12B, the island 14 and the like collectively and mechanically supporting the whole. The sealing resin 24 is made of a thermosetting resin or a thermoplastic resin, and particulate or fibrous fillers may be mixed in order to improve heat dissipation.

金属接続板１６Ａ、１６Ｂは、一方が半導体素子１８の電極と接続され、他方がリード１２Ａ、１２Ｂに接続されている。具体的には、図１（Ａ）を参照して、金属接続板１６Ａは、細く形成される端部が半導体素子１８のソース電極３０Ａと固着され、幅広に形成される一方の端部が、リード１２Ａの接続部２６Ａの上面に固着される。そして、金属接続板１６Ｂは、細く形成される端部が半導体素子１８のゲート電極３０Ｂと接続され、広く形成される一方の端部が、リード１２Ｂの接続部２６Ｂの上面に固着される。   One of the metal connection plates 16A and 16B is connected to the electrode of the semiconductor element 18, and the other is connected to the leads 12A and 12B. Specifically, referring to FIG. 1A, the metal connection plate 16A has a thin end portion fixed to the source electrode 30A of the semiconductor element 18 and one end portion formed wide. It is fixed to the upper surface of the connecting portion 26A of the lead 12A. The metal connection plate 16B has a thin end portion connected to the gate electrode 30B of the semiconductor element 18, and one wide end portion fixed to the upper surface of the connection portion 26B of the lead 12B.

ここで、金属接続板１６Ａの構造としては、半導体素子１８側が幅広に形成され、半導体素子１８の電極と接触する面積が、リード１２Ａと接触する面積よりも大きくなっても良い。特に、半導体素子１８のソース電極３０Ａと金属接続板１６Ａとが接触する面積を増大して、オン抵抗を低減させることができる。この場合は、半導体素子１８の接続に用いられる固着材の量が、リード１２Ａの接続に使用される固着材よりも多量となる。   Here, as a structure of the metal connection plate 16A, the semiconductor element 18 side may be formed wider, and the area in contact with the electrode of the semiconductor element 18 may be larger than the area in contact with the lead 12A. In particular, the on-resistance can be reduced by increasing the area where the source electrode 30A of the semiconductor element 18 and the metal connection plate 16A are in contact with each other. In this case, the amount of the fixing material used for connecting the semiconductor element 18 is larger than that of the fixing material used for connecting the leads 12A.

この金属接続板１６Ａ、１６Ｂは、厚みが例えば０．１ｍｍ程度の銅等から成る金属板をプレス加工して成形されたものであり、半導体素子１８とリード１２Ａ等とを電気的に接続する接続手段として機能している。金属接続板１６Ａは、半導体素子１８またはリード１２Ａと接続される両端部が平坦とされており、中間部を折り曲げ加工することで傾斜部が形成されている。ここで、金属接続板１６Ａ等は、クリップと称される場合もある。   The metal connection plates 16A and 16B are formed by pressing a metal plate made of copper or the like having a thickness of, for example, about 0.1 mm, and electrically connect the semiconductor element 18 and the leads 12A and the like. It functions as a means. The metal connecting plate 16A is flat at both ends connected to the semiconductor element 18 or the lead 12A, and an inclined portion is formed by bending an intermediate portion. Here, the metal connection plate 16A or the like may be referred to as a clip.

このような板状の金属接続板１６Ａは、直径が０．５ｍｍ程度の金属細線と比較すると、電流が流れる方向に対する断面が大きい。従って、金属接続板１６Ａ等を採用することにより、接続手段の電気抵抗を低減して、電流容量を増大させることができる。更には、金属接続板１６Ａ等は、半導体素子１８およびリード１２Ａと面的に接合しているので、熱の伝導が容易になり、半導体素子１８から発生した熱を金属接続板１６Ａおよびリード１２Ａを経由して、外部に良好に伝導させて放出させることができる。特に、数アンペア（例えば１アンペア以上）の電流のスイッチングを行うパワートランジスタが半導体素子１８として採用された場合、電流容量の確保および放熱性の向上のために、接続手段として金属接続板を用いることは好適である。   Such a plate-shaped metal connection plate 16A has a larger cross section with respect to the direction in which the current flows than a metal thin wire having a diameter of about 0.5 mm. Therefore, by adopting the metal connection plate 16A or the like, it is possible to reduce the electrical resistance of the connection means and increase the current capacity. Furthermore, since the metal connection plate 16A and the like are joined to the semiconductor element 18 and the lead 12A in a surface, heat conduction is facilitated, and heat generated from the semiconductor element 18 is transferred to the metal connection plate 16A and the lead 12A. It can be made to conduct well to the outside and be discharged. In particular, when a power transistor that switches current of several amperes (for example, 1 ampere or more) is adopted as the semiconductor element 18, a metal connection plate is used as a connection means in order to ensure current capacity and improve heat dissipation. Is preferred.

図１（Ｂ）を参照して、金属接続板１６Ａの左側の端部の下面は、固着材３４を介して半導体素子１８のソース電極３０Ａに固着されている。そして、金属接続板１６Ａの右側の端部の下面は、固着材３２を介して接続部２６Ａ（リード１２Ａ）の上面に固着されている。ここで、固着材３４、３２としては、導電性ペーストまたは半田が採用される。ここで、導電性ペーストとは銀等から成る粉状の導電材料を絶縁性接着材に混入させたものであり、半田としては高温半田または低温半田が採用される。この事項は金属接続板１６Ｂに関しても同様である。ここで使用される半田は、溶融温度が２８０℃乃至３５０℃程度の高温半田で、鉛の含有率が９０％程度である。   Referring to FIG. 1B, the lower surface of the left end portion of the metal connection plate 16 </ b> A is fixed to the source electrode 30 </ b> A of the semiconductor element 18 through the fixing material 34. The lower surface of the right end portion of the metal connection plate 16A is fixed to the upper surface of the connection portion 26A (lead 12A) via the fixing material 32. Here, as the fixing members 34 and 32, conductive paste or solder is employed. Here, the conductive paste is obtained by mixing a powdery conductive material made of silver or the like into an insulating adhesive, and high-temperature solder or low-temperature solder is used as the solder. The same applies to the metal connection plate 16B. The solder used here is a high-temperature solder having a melting temperature of about 280 ° C. to 350 ° C., and the lead content is about 90%.

更に図１（Ｂ）を参照して、金属接続板１６Ａの中間部を厚み方向に突出させて突起部２８Ａが形成されている。突起部２８Ａは、金属接続板１６Ａに対してプレス加工（コイニング）を施すことにより形成され、金属接続板１６Ａの下面から突起部２８Ａの下端が突出する長さは、１００μｍ以上２００μｍ以下（代表的には１５０μｍ）である。同様に、図１（Ａ）を参照すると、金属接続板１６Ｂを部分的に厚み方向に突出させて突起部２８Ｂが形成されている。ここで、金属接続板１６Ａに複数個の突起部２８Ａを設けることも可能であるが、多数の突起部２８Ａを設けるとその部分の金属接続板１６Ａの断面積が小さくなり電気抵抗が増大してしまう恐れがある。従って、設けられる突起部２８Ａの個数としては、１つが好適である。   Further, referring to FIG. 1B, a protrusion 28A is formed by projecting an intermediate portion of the metal connection plate 16A in the thickness direction. The protrusion 28A is formed by pressing (coining) the metal connection plate 16A, and the length at which the lower end of the protrusion 28A protrudes from the lower surface of the metal connection plate 16A is 100 μm or more and 200 μm or less (typical). Is 150 μm). Similarly, referring to FIG. 1A, the metal connection plate 16B is partially protruded in the thickness direction to form a protrusion 28B. Here, it is possible to provide a plurality of protrusions 28A on the metal connection plate 16A. However, if a large number of protrusions 28A are provided, the cross-sectional area of the metal connection plate 16A at that portion decreases and the electrical resistance increases. There is a risk. Therefore, the number of the protrusions 28A provided is preferably one.

この様に、金属接続板１６Ａに突起部２８Ａを設けることにより、金属接続板１６Ａの移動が抑制され、所定の位置にて金属接続板１６Ａが固着される。   Thus, by providing the protrusion 28A on the metal connection plate 16A, the movement of the metal connection plate 16A is suppressed, and the metal connection plate 16A is fixed at a predetermined position.

具体的には、金属接続板１６Ａは、半田である固着材３２、３４を溶融させるリフロー工程により、半導体素子１８およびリード１２Ａに固着される。従って、リフロー工程に於いては、溶融して液化した固着材３２、３４による表面張力が金属接続板１６Ａに作用する。また、リード１２Ａの幅広な接続部２６Ａの上面に塗布される固着材３２は、半導体素子１８のソース電極３０Ａに塗布される固着材３４よりも多量である。具体的には、リード１２Ａに塗布される固着材３２の量は、半導体素子１８のソース電極３０Ａに塗布される固着材３４の２倍以上である。更に、リード１２Ａの接続部２６Ａと固着材３２とが接触する面積は、半導体素子１８のソース電極３０Ａと固着材３４とが接触する面積よりも大きい。従って、固着材３２の表面張力は固着材３４の表面張力よりも大きくなり、結果的に金属接続板１６Ａを紙面上にて右側に移動させようとする力が作用する。金属接続板１６Ａが紙面上にて右側に移動してずれて配置されると、金属接続板１６Ａとソース電極３０Ａとが接触する面積が小さくなり、この部分の抵抗値が大きくなってしまう恐れがある。更には、金属接続板１６Ａによりリード１２Ａの溝１３が塞がれることで溝１３に封止樹脂２４が接触せずに、結果的にリード１２Ａと封止樹脂２４との密着強度が低下してしまうそれもある。   Specifically, the metal connection plate 16A is fixed to the semiconductor element 18 and the lead 12A by a reflow process in which the fixing materials 32 and 34, which are solders, are melted. Therefore, in the reflow process, the surface tension due to the melted and liquefied fixing materials 32 and 34 acts on the metal connection plate 16A. Further, the amount of the fixing material 32 applied to the upper surface of the wide connecting portion 26A of the lead 12A is larger than the amount of the fixing material 34 applied to the source electrode 30A of the semiconductor element 18. Specifically, the amount of the fixing material 32 applied to the lead 12 </ b> A is twice or more that of the fixing material 34 applied to the source electrode 30 </ b> A of the semiconductor element 18. Furthermore, the area where the connecting portion 26A of the lead 12A contacts the fixing material 32 is larger than the area where the source electrode 30A of the semiconductor element 18 contacts the fixing material 34. Therefore, the surface tension of the fixing material 32 becomes larger than the surface tension of the fixing material 34, and as a result, a force acts to move the metal connecting plate 16A to the right side on the paper surface. If the metal connection plate 16A moves to the right on the paper surface and is displaced, the area where the metal connection plate 16A and the source electrode 30A come into contact with each other decreases, and the resistance value of this portion may increase. is there. Furthermore, the groove 13 of the lead 12A is blocked by the metal connection plate 16A, so that the sealing resin 24 does not come into contact with the groove 13, resulting in a decrease in the adhesion strength between the lead 12A and the sealing resin 24. There is also it.

本実施の形態では、金属接続板１６Ａを部分的に下方に突出させて突起部２８Ａを設けることにより、金属接続板１６Ａの移動を抑制している。具体的には、上記したように固着材３２、３４が溶融することで、金属接続板１６Ａを紙面上にて右側に移動させようとする力が作用する。このとき、金属接続板１６Ａに設けた突起部２８Ａが、リード１２Ａ（接続部２６Ａ）の側面に接触し、金属接続板１６Ａの右方向への移動が防止される。即ち、突起部２８Ａがリード１２Ａの側面に接触することで、金属接続板１６Ａが所定の位置に固定される。このことにより、半導体素子１８のソース電極３０Ａと金属接続板１６Ａとが接触する面積が所定に保たれる。更には、リード１２Ａの溝１３が金属接続板１６Ａにより塞がれないので、溝１３に封止樹脂２４が嵌合し、リード１２Ａと封止樹脂２４との密着強度が向上される。   In the present embodiment, the movement of the metal connection plate 16A is suppressed by providing the protrusion 28A by partially protruding the metal connection plate 16A downward. Specifically, as described above, when the fixing members 32 and 34 are melted, a force for moving the metal connection plate 16A to the right side on the paper surface acts. At this time, the protrusion 28A provided on the metal connection plate 16A contacts the side surface of the lead 12A (connection portion 26A), and the metal connection plate 16A is prevented from moving in the right direction. That is, the protrusion 28A comes into contact with the side surface of the lead 12A, so that the metal connection plate 16A is fixed at a predetermined position. Thereby, the area where the source electrode 30A of the semiconductor element 18 and the metal connection plate 16A are in contact with each other is kept at a predetermined level. Furthermore, since the groove 13 of the lead 12A is not blocked by the metal connection plate 16A, the sealing resin 24 is fitted into the groove 13, and the adhesion strength between the lead 12A and the sealing resin 24 is improved.

次に、図２から図４を参照して、上記した構成の半導体装置の製造方法を説明する。   Next, with reference to FIGS. 2 to 4, a method of manufacturing the semiconductor device having the above-described configuration will be described.

先ず、図２を参照して、所定形状のリードフレーム３８を用意する。図２（Ａ）はリードフレーム３８全体を示す平面図であり、図２（Ｂ）はリードフレーム３８に含まれるユニット４２を示す斜視図である。   First, referring to FIG. 2, a lead frame 38 having a predetermined shape is prepared. 2A is a plan view showing the entire lead frame 38, and FIG. 2B is a perspective view showing a unit 42 included in the lead frame 38.

図２（Ａ）を参照して、リードフレーム３８の外形は短冊形状であり、枠状の外枠４０の内部に複数個のユニット４２が形成されている。ここでユニットとは、１つの半導体装置を構成する要素単位のことである。図では、額縁状の外枠４０と連結された９個のユニット４２が示されているが、外枠４０の内部にマトリックス状に多数個のユニット４２が設けられても良い。   Referring to FIG. 2A, the outer shape of the lead frame 38 is a strip shape, and a plurality of units 42 are formed inside a frame-shaped outer frame 40. Here, the unit is an element unit constituting one semiconductor device. In the figure, nine units 42 connected to the frame-shaped outer frame 40 are shown, but a large number of units 42 may be provided in a matrix in the outer frame 40.

図２（Ｂ）を参照して、１つのユニット４２は、１つのアイランド１４と、アイランド１４に一端が接近する複数のリードとから成る。アイランド１４は、上面に半導体素子が載置可能な大きさ（例えば５．５ｍｍ×５．５ｍｍ程度）であり、細長い形状の連結部２２を経由して、タブ２０が連続している。また、タブ２０が連続する辺に対向するアイランド１４の辺からはリード１２Ｃが一体的に延在して、外枠４０と連続している。即ち、リード１２Ｃは、アイランド１４を外枠４０に固定する為の吊りリードとして機能している。リード１２Ａは、一端がアイランド１４に接近して他端は外枠４０に連結されている。そして、アイランド１４に接近するリード１２Ａの端部を部分的に幅広とすることで接続部２６Ａが形成されている。この構成はリード１２Ｂも同様であり、アイランド１４側の端部には幅広の接続部２６Ｂが形成され、一方の端部は外枠４０と連続している。   Referring to FIG. 2B, one unit 42 includes one island 14 and a plurality of leads whose one ends approach the island 14. The island 14 has a size (for example, about 5.5 mm × 5.5 mm) on which the semiconductor element can be placed on the upper surface, and the tabs 20 are continuous via the elongated connecting portion 22. Further, the lead 12 </ b> C extends integrally from the side of the island 14 facing the side where the tab 20 continues, and is continuous with the outer frame 40. That is, the lead 12 </ b> C functions as a suspension lead for fixing the island 14 to the outer frame 40. One end of the lead 12A approaches the island 14 and the other end is connected to the outer frame 40. Then, the connecting portion 26A is formed by partially widening the end portion of the lead 12A approaching the island 14. This configuration is the same for the lead 12B. A wide connection portion 26B is formed at the end portion on the island 14 side, and one end portion is continuous with the outer frame 40.

図３を参照して、次に、アイランド１４の上面に半導体素子１８を実装し、更に半導体素子１８の電極とリード１２Ａ、１２Ｂとを、金属接続板１６Ａ、１６Ｂを介して接続する。図３（Ａ）は本工程を示す斜視図であり、図３（Ｂ）はその断面図である。   Referring to FIG. 3, next, the semiconductor element 18 is mounted on the upper surface of the island 14, and the electrodes of the semiconductor element 18 and the leads 12A, 12B are connected via the metal connection plates 16A, 16B. FIG. 3A is a perspective view showing this process, and FIG. 3B is a sectional view thereof.

先ず、アイランド１４の上面に固着材３６を介して、半導体素子１８を実装する。半導体素子１８としては、上記したように、ＭＯＳＦＥＴ、バイポーラトランジスタ、ＩＧＢＴ、ＩＣ、ダイオード等が採用される。ここでは、一例としてＭＯＳＦＥＴが半導体素子１８として採用され、上面にソース電極３０Ａおよびゲート電極３０Ｂが設けられ、裏面はドレイン電極が形成されている。また、固着材３６としては、半導体素子１８の裏面が電極として用いられる場合は、半田や導電性ペースト等の導電性固着材が用いられる。一方、半導体素子の裏面が電極として用いられない場合は、エポキシ樹脂等の絶縁性の接着材を固着材３６として用いても良い。   First, the semiconductor element 18 is mounted on the upper surface of the island 14 via the fixing material 36. As described above, a MOSFET, a bipolar transistor, an IGBT, an IC, a diode, or the like is employed as the semiconductor element 18. Here, as an example, a MOSFET is employed as the semiconductor element 18, a source electrode 30A and a gate electrode 30B are provided on the upper surface, and a drain electrode is formed on the rear surface. As the fixing material 36, when the back surface of the semiconductor element 18 is used as an electrode, a conductive fixing material such as solder or conductive paste is used. On the other hand, when the back surface of the semiconductor element is not used as an electrode, an insulating adhesive such as an epoxy resin may be used as the fixing material 36.

次に、固着材を介して金属接続板を固着する。具体的には、図３（Ｂ）を参照して、先ず、半田ペーストから成る固着材３２をリード１２Ａの接続部２６Ａの上面に塗布する。同様に半田ペーストから成る固着材３４を、半導体素子１８のソース電極３０Ａの上面に塗布する。ここで、リード１２Ａの接続部２６Ａの上面に塗布される固着材３２の量は、半導体素子１８のソース電極３０Ａに塗布される固着材３４よりも多量である。更に、金属接続板１６Ａの左側の端部を、半導体素子１８のソース電極３０Ａに塗布された固着材３４に載置し、右側の端部を、リード１２Ａの接続部２６Ａに塗布された固着材３２に載置する。そして、この状態でリフロー工程を行うことにより、固着材３２、３４が溶融した後に固化し、金属接続板１６Ａが固着される。図３（Ａ）を参照して、この接続方法は金属接続板１６Ｂも同様であり、半田から成る固着材を介して、金属接続板１６Ｂの一端は半導体素子１８のゲート電極３０Ｂと接続され、他端はリード１２Ｂの接続部２６Ｂに接続される。   Next, the metal connection plate is fixed through a fixing material. Specifically, referring to FIG. 3B, first, a fixing material 32 made of a solder paste is applied to the upper surface of the connection portion 26A of the lead 12A. Similarly, a fixing material 34 made of a solder paste is applied to the upper surface of the source electrode 30 </ b> A of the semiconductor element 18. Here, the amount of the fixing material 32 applied to the upper surface of the connection portion 26 </ b> A of the lead 12 </ b> A is larger than that of the fixing material 34 applied to the source electrode 30 </ b> A of the semiconductor element 18. Further, the left end of the metal connection plate 16A is placed on the fixing material 34 applied to the source electrode 30A of the semiconductor element 18, and the right end is fixed to the connecting material 26A of the lead 12A. 32. Then, by performing the reflow process in this state, the fixing members 32 and 34 are melted and then solidified to fix the metal connection plate 16A. Referring to FIG. 3A, this connection method is the same for the metal connection plate 16B, and one end of the metal connection plate 16B is connected to the gate electrode 30B of the semiconductor element 18 via a fixing material made of solder. The other end is connected to the connecting portion 26B of the lead 12B.

本実施の形態では、図３（Ｂ）を参照して、金属接続板１６Ａを部分的に下方に突出せて突起部２８Ａを設け、このことにより本工程に於ける金属接続板１６Ａの移動を抑制している。具体的には、リフロー工程により半田ペーストである固着材３２、３４を溶融させると、多量に塗布された固着材３２の表面張力により、金属接続板１６Ａを紙面上にて右方向に移動させる力が作用する。本実施の形態では、突起部２８Ａによりこの移動を抑制している。具体的には、金属接続板１６Ａは、突起部２８Ａがリード１２Ａの左端よりも左側（半導体素子１８側）に位置するように載置されている。従って、上記した表面張力により金属接続板１６Ａがリード１２Ａ側に移動しようとすると、突起部２８Ａがリード１２Ａの左側側面に接触し、それ以上の移動が防止される。そして、突起部２８Ａがリード１２Ａの側面に接触した状態で、固着材３２、３４が冷却されて固化し、金属接続板１６Ａが固着される。この事項は、金属接続板１６Ｂに関しても同様である。   In the present embodiment, referring to FIG. 3B, the metal connection plate 16A is partially protruded downward to provide a projection 28A, which allows the metal connection plate 16A to move in this step. Suppressed. Specifically, when the fixing materials 32 and 34, which are solder pastes, are melted by the reflow process, the force that moves the metal connecting plate 16A rightward on the paper surface due to the surface tension of the fixing material 32 applied in a large amount. Works. In the present embodiment, this movement is suppressed by the protrusion 28A. Specifically, the metal connection plate 16A is placed so that the protrusion 28A is positioned on the left side (semiconductor element 18 side) of the left end of the lead 12A. Therefore, when the metal connection plate 16A attempts to move toward the lead 12A due to the surface tension described above, the protrusion 28A contacts the left side surface of the lead 12A, and further movement is prevented. Then, in a state where the protrusion 28A is in contact with the side surface of the lead 12A, the fixing members 32 and 34 are cooled and solidified, and the metal connection plate 16A is fixed. The same applies to the metal connection plate 16B.

ここで、半導体素子１８の実装は、金属接続板１６Ａの固着と同時に行っても良い。この場合は、先ず、半田ペーストから成る固着材３６を介して半導体素子１８をアイランド１４の上面に載置する。更に、半田ペーストから成る固着材３２、３４を介して金属接続板１６Ａを半導体素子１８およびリード１２Ａに載置する。同様に金属接続板１６Ｂも載置される。その後に、リフロー工程により、固着材３２、３４、３６を同時に溶融して固化させることで、半導体素子１８の実装および金属接続板１６Ａ、１６Ｂの固着が同時に行われる。   Here, the mounting of the semiconductor element 18 may be performed simultaneously with the fixing of the metal connection plate 16A. In this case, first, the semiconductor element 18 is placed on the upper surface of the island 14 via the fixing material 36 made of solder paste. Further, the metal connection plate 16A is placed on the semiconductor element 18 and the lead 12A via the fixing materials 32 and 34 made of solder paste. Similarly, the metal connection plate 16B is also placed. Thereafter, the fixing members 32, 34, and 36 are simultaneously melted and solidified by a reflow process, whereby the semiconductor element 18 is mounted and the metal connection plates 16A and 16B are fixed simultaneously.

以上の工程は、図２（Ａ）に示すリードフレーム３８の各ユニット４２に対して一括して行われる。   The above steps are performed collectively for each unit 42 of the lead frame 38 shown in FIG.

図４を参照して、次に、半導体素子１８等が被覆されるように樹脂封止を行う。図４（Ａ）は本工程を示す断面図であり、図４（Ｂ）は本工程を経たリードフレーム３８を示す平面図である。   Referring to FIG. 4, next, resin sealing is performed so as to cover semiconductor element 18 and the like. 4A is a cross-sectional view showing this step, and FIG. 4B is a plan view showing the lead frame 38 that has undergone this step.

図４（Ａ）を参照して、本工程では、モールド金型４４を用いて樹脂封止を行う。このモールド金型４４は、上金型４６と下金型４８とから成り、両者を当接させることで、封止樹脂が注入されるキャビティ５０が形成される。樹脂封止の方法としては、熱硬化性樹脂を用いるトランスファーモールドを採用することができる。   Referring to FIG. 4A, in this step, resin sealing is performed using a mold 44. The mold 44 includes an upper mold 46 and a lower mold 48, and a cavity 50 into which a sealing resin is injected is formed by bringing them into contact with each other. As a resin sealing method, a transfer mold using a thermosetting resin can be employed.

具体的な封止方法は、先ず、半導体素子１８が上面に実装されたアイランド１４とリード１２Ａの端部を、キャビティ５０に収納させる。次に、モールド金型４４に設けたゲート（不図示）からキャビティ５０の内部に封止樹脂を注入して、アイランド１４、半導体素子１８、金属接続板１６Ａおよびリード１２Ａを樹脂封止する。更に本工程では、リード１２Ａの上面に設けた溝１３が金属接続板１６Ａにより塞がれていないので、この溝１３に封止樹脂が嵌合し、封止樹脂とリード１２Ａとの密着強度が向上されている。   As a specific sealing method, first, the island 14 on which the semiconductor element 18 is mounted on the upper surface and the end of the lead 12 </ b> A are accommodated in the cavity 50. Next, a sealing resin is injected into the cavity 50 from a gate (not shown) provided in the mold die 44, and the island 14, the semiconductor element 18, the metal connection plate 16A, and the lead 12A are resin-sealed. Further, in this step, since the groove 13 provided on the upper surface of the lead 12A is not blocked by the metal connection plate 16A, the sealing resin is fitted into the groove 13 and the adhesion strength between the sealing resin and the lead 12A is increased. Has been improved.

ここでは、アイランド１４の下面を外部に露出させるために、下金型４８の内壁にアイランド１４の下面が当接している。ここで、アイランドの下面が封止樹脂により被覆される場合は、アイランド１４の下面は下金型４８の内壁から離間される。   Here, in order to expose the lower surface of the island 14 to the outside, the lower surface of the island 14 is in contact with the inner wall of the lower mold 48. Here, when the lower surface of the island is covered with the sealing resin, the lower surface of the island 14 is separated from the inner wall of the lower mold 48.

キャビティ５０の内部への樹脂の注入が終了した後は、モールド金型４４から樹脂封止体を取り出す。また、封止樹脂として採用された樹脂が熱硬化性樹脂である場合は、加熱硬化の工程が必要となる。   After the injection of the resin into the cavity 50 is completed, the resin sealing body is taken out from the mold die 44. Further, when the resin employed as the sealing resin is a thermosetting resin, a heat curing step is required.

図４（Ｂ）に樹脂封止が終了した後のリードフレーム３８を示す。ここでは、リードフレーム３８に設けられた各ユニット４２が一括して同時に樹脂封止される。   FIG. 4B shows the lead frame 38 after resin sealing is completed. Here, the units 42 provided on the lead frame 38 are simultaneously sealed with resin.

本工程が終了した後は、打ち抜き加工を行うことでリードフレーム３８から各ユニット４２を分離し、分離された半導体装置を、例えば実装基板上に実装する。また、外部に露出するリード１２Ａ等の酸化を防止するために、リード１２Ａの表面を半田メッキ等のメッキ膜により被覆する。   After this step is completed, each unit 42 is separated from the lead frame 38 by punching, and the separated semiconductor device is mounted on a mounting substrate, for example. Further, in order to prevent oxidation of the lead 12A and the like exposed to the outside, the surface of the lead 12A is covered with a plating film such as solder plating.

以上の工程により、図１に構造を示す半導体装置１０が製造される。   Through the above steps, the semiconductor device 10 whose structure is shown in FIG. 1 is manufactured.

図５を参照して、次に、他の形態の半導体装置１０Ａの構成を説明する。図５（Ａ）は半導体装置１０Ａを示す平面図であり、図５（Ｂ）はその断面図である。   Next, the configuration of another form of semiconductor device 10A will be described with reference to FIG. FIG. 5A is a plan view showing the semiconductor device 10A, and FIG. 5B is a cross-sectional view thereof.

図５（Ａ）および図５（Ｂ）を参照して、半導体装置１０Ａの構成は、図１に示した半導体装置１０と基本的には同様であり、共通する部位には同様の符号を付している。半導体装置１０Ａでは、実装される半導体素子１８として、表面に多数個の電極が設けられたＬＳＩが採用されている。   Referring to FIGS. 5A and 5B, the configuration of semiconductor device 10A is basically the same as that of semiconductor device 10 shown in FIG. 1, and common portions are denoted by the same reference numerals. is doing. In the semiconductor device 10A, an LSI having a large number of electrodes on the surface is employed as the semiconductor element 18 to be mounted.

ここで、半導体装置１０Ａの構造としては、ＤＩＰ（Ｄｕａｌ Ｉｎｌｉｎｅ Ｐａｃｋａｇｅ）、ＱＦＰ（Ｑｕａｄ Ｆｌａｔ Ｐａｃｋａｇｅ）、ＳＩＰ（Ｓｙｓｔｅｍ ｉｎ Ｐａｃｋａｇｅ）等が採用できる。   Here, as a structure of the semiconductor device 10A, DIP (Dual Inline Package), QFP (Quad Flat Package), SIP (System in Package), or the like can be adopted.

図５（Ａ）を参照して、半導体装置１０Ａでは、中央部にアイランド１４が配置され、アイランドの周囲に多数のリード１２が配置されている。そして、多数のリード１２の中でも、リード１２Ａ、１２Ｂは、金属接続板１６Ａ、１６Ｂを経由して半導体素子１８の電極と接続されている。そして、これら以外のリード１２は、金属細線５２を経由して半導体素子の電極と接続されている。ここでは、大電流が通過するリードのみが金属接続板を介して半導体素子と接続され、それ以外の電気信号（例えば制御信号）が通過するリードは金属細線５２を経由して半導体素子と接続されている。また、半導体素子の全ての電極が、金属接続板を使用してリード１２と接続されても良い。   Referring to FIG. 5A, in the semiconductor device 10A, an island 14 is arranged at the center, and a large number of leads 12 are arranged around the island. Among the numerous leads 12, the leads 12A and 12B are connected to the electrodes of the semiconductor element 18 via the metal connection plates 16A and 16B. The leads 12 other than these are connected to the electrodes of the semiconductor element via the fine metal wires 52. Here, only the lead through which a large current passes is connected to the semiconductor element via the metal connection plate, and the lead through which other electrical signals (for example, control signals) pass is connected to the semiconductor element via the metal thin wire 52. ing. Further, all the electrodes of the semiconductor element may be connected to the lead 12 using a metal connection plate.

図５（Ｂ）を参照して、金属接続板１６Ａの中間部を下方に突起させた突起部２８Ａが設けられている。この突起部２８Ａの機能は、上述と同様であり、突起部２８Ａがリード１２Ａの側面に接触することで、金属接続板１６Ａの実装時の移動が防止されている。   With reference to FIG. 5 (B), a protruding portion 28A is provided in which the intermediate portion of the metal connecting plate 16A protrudes downward. The function of the protrusion 28A is the same as described above, and the protrusion 28A contacts the side surface of the lead 12A, thereby preventing movement of the metal connection plate 16A during mounting.

本発明の半導体装置を示す図であり、（Ａ）は斜視図であり、（Ｂ）は断面図である。1A and 1B are diagrams illustrating a semiconductor device of the present invention, in which FIG. 1A is a perspective view, and FIG. 本発明の半導体装置の製造方法を示す図であり、（Ａ）は平面図であり、（Ｂ）は斜視図である。It is a figure which shows the manufacturing method of the semiconductor device of this invention, (A) is a top view, (B) is a perspective view. 本発明の半導体装置の製造方法を示す図であり、（Ａ）は斜視図であり、（Ｂ）は断面図である。It is a figure which shows the manufacturing method of the semiconductor device of this invention, (A) is a perspective view, (B) is sectional drawing. 本発明の半導体装置の製造方法を示す図であり、（Ａ）は断面図であり、（Ｂ）は平面図である。It is a figure which shows the manufacturing method of the semiconductor device of this invention, (A) is sectional drawing, (B) is a top view. 本発明の半導体装置を示す図であり、（Ａ）は平面図であり、（Ｂ）は断面図である。1A and 1B are diagrams illustrating a semiconductor device of the present invention, in which FIG. 1A is a plan view, and FIG. 背景技術の半導体装置を示す図であり、（Ａ）は斜視図であり、（Ｂ）は断面図である。It is a figure which shows the semiconductor device of background art, (A) is a perspective view, (B) is sectional drawing.

符号の説明Explanation of symbols

１０、１０Ａ 半導体装置
１２、１２Ａ、１２Ｂ、１２Ｃ リード
１３ 溝
１４ アイランド
１６Ａ、１６Ｂ 金属接続板
１８ 半導体素子
２０ タブ
２２ 連結部
２４ 封止樹脂
２６Ａ、２６Ｂ 接続部
２８Ａ，２８Ｂ 突起部
３０Ａ ソース電極
３０Ｂ ゲート電極
３２ 固着材
３４ 固着材
３６ 固着材
３８ リードフレーム
４０ 外枠
４２ ユニット
４４ モールド金型
４６ 上金型
４８ 下金型
５０ キャビティ
５２ 金属細線
10, 10A Semiconductor device 12, 12A, 12B, 12C Lead 13 Groove 14 Island 16A, 16B Metal connection plate 18 Semiconductor element 20 Tab 22 Connection portion 24 Sealing resin 26A, 26B Connection portions 28A, 28B Protrusion portion 30A Source electrode 30B Gate Electrode 32 Fixing material 34 Fixing material 36 Fixing material 38 Lead frame 40 Outer frame 42 Unit 44 Mold die 46 Upper die 48 Lower die 50 Cavity 52 Metal fine wire

Claims (9)

主面に電極が配置された半導体素子と、前記半導体素子と電気的に接続されて一部が外部に導出するリードと、前記半導体素子の電極および前記リードに固着材を介して固着された金属接続板とを備え、
前記リードの端部よりも前記半導体素子側の前記金属接続板を厚み方向に突出させて突起部を設けることを特徴とする半導体装置。 A semiconductor element having an electrode disposed on a main surface; a lead electrically connected to the semiconductor element and partially led out; and a metal fixed to the electrode of the semiconductor element and the lead via a fixing material With a connection plate,
A semiconductor device, wherein a protrusion is provided by projecting the metal connection plate closer to the semiconductor element than the end of the lead in the thickness direction. 前記固着材は半田であることを特徴とする請求項１記載の半導体装置。   The semiconductor device according to claim 1, wherein the fixing material is solder. 前記半導体素子の電極と前記金属接続板とを接合される前記固着材よりも、前記リードと前記金属接続板とを接合させる前記固着材の方が多量であることを特徴とする請求項１記載の半導体装置。   2. The fixing material for bonding the lead and the metal connection plate is larger than the fixing material for bonding the electrode of the semiconductor element and the metal connection plate. Semiconductor device. 前記リードの端部を幅広にした接続部を設け、
前記金属接続板は前記接続部の主面に前記固着材を介して接合されることを特徴とする請求項１記載の半導体装置。 Provide a connection part that widens the end of the lead,
The semiconductor device according to claim 1, wherein the metal connection plate is bonded to a main surface of the connection portion via the fixing material. 前記半導体素子は、ＭＯＳＦＥＴ、バイポーラトランジスタ、ＩＣ、ダイオードのいずれかであることを特徴とする請求項１記載の半導体装置。   2. The semiconductor device according to claim 1, wherein the semiconductor element is any one of a MOSFET, a bipolar transistor, an IC, and a diode. アイランドの上面に配置された半導体素子の電極と、前記アイランドに一端が接近するリードとを、金属接続板にて固着材を介して接続する工程を備えた半導体装置の製造方法であり、
前記金属接続板を厚み方向に部分的に突出させた突起部を、前記リードに接触させることを特徴とする半導体装置の製造方法。 A method of manufacturing a semiconductor device comprising a step of connecting an electrode of a semiconductor element disposed on an upper surface of an island and a lead having one end approaching the island through a fixing material with a metal connection plate,
A method of manufacturing a semiconductor device, comprising: bringing a protrusion, which is formed by partially protruding the metal connection plate in a thickness direction, into contact with the lead. 前記接続する工程では、
前記半導体素子の前記電極および前記リードの端部に半田クリームを塗布し、前記半田クリームに前記金属接続板を載置した後に、前記半田クリームを溶融させることを特徴とする請求項６記載の半導体装置の製造方法。 In the connecting step,
The semiconductor according to claim 6, wherein a solder cream is applied to the electrode and the end of the lead of the semiconductor element, and the solder cream is melted after the metal connection plate is placed on the solder cream. Device manufacturing method. 前記リードに塗布される半田クリームの量は、前記半導体素子の前記電極に塗布される半田クリームよりも多量であることを特徴とする請求項７記載の半導体装置の製造方法。   8. The method of manufacturing a semiconductor device according to claim 7, wherein the amount of the solder cream applied to the lead is larger than the amount of the solder cream applied to the electrode of the semiconductor element. 前記リードに塗布された半田クリームが溶融した際に発生する表面張力により、前記金属接続板の前記突起部を、前記リードの端部に接触させることを特徴とする請求項７記載の半導体装置の製造方法。

The semiconductor device according to claim 7, wherein the protrusion of the metal connection plate is brought into contact with an end of the lead by surface tension generated when the solder cream applied to the lead is melted. Production method.

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US9252086B2 (en) 2012-01-12 2016-02-02 Fuji Electric Co., Ltd. Connector and resin-sealed semiconductor device
JP2016195189A (en) * 2015-03-31 2016-11-17 新電元工業株式会社 Method of manufacturing semiconductor device and apparatus for manufacturing semiconductor device
WO2018235330A1 (en) * 2017-06-20 2018-12-27 住友電気工業株式会社 Semiconductor device
US11367675B2 (en) 2020-03-16 2022-06-21 Kabushiki Kaisha Toshiba Method for manufacturing semiconductor device including a semiconductor chip and lead frame
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US11367675B2 (en) 2020-03-16 2022-06-21 Kabushiki Kaisha Toshiba Method for manufacturing semiconductor device including a semiconductor chip and lead frame
US11499819B2 (en) 2020-03-16 2022-11-15 Kabushiki Kaisha Toshiba Shape measurement method and shape measuring device

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