JP2009267054A5 - - Google Patents

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Publication number
JP2009267054A5
JP2009267054A5 JP2008114300A JP2008114300A JP2009267054A5 JP 2009267054 A5 JP2009267054 A5 JP 2009267054A5 JP 2008114300 A JP2008114300 A JP 2008114300A JP 2008114300 A JP2008114300 A JP 2008114300A JP 2009267054 A5 JP2009267054 A5 JP 2009267054A5
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JP
Japan
Prior art keywords
lead
semiconductor device
semiconductor element
electrode
metal
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Pending
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JP2008114300A
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Japanese (ja)
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JP2009267054A (en
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Priority to JP2008114300A priority Critical patent/JP2009267054A/en
Priority claimed from JP2008114300A external-priority patent/JP2009267054A/en
Publication of JP2009267054A publication Critical patent/JP2009267054A/en
Publication of JP2009267054A5 publication Critical patent/JP2009267054A5/ja
Pending legal-status Critical Current

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Claims (9)

主面に電極が配置された半導体素子と、前記半導体素子と電気的に接続されて一部が外部に導出するリードと、前記半導体素子の電極および前記リードに固着材を介して固着された金属接続板とを備え、
前記リードの端部よりも前記半導体素子側の前記金属接続板を厚み方向に突出させて突起部を設けることを特徴とする半導体装置。 A semiconductor element having an electrode disposed on a main surface; a lead electrically connected to the semiconductor element and partially led out; and a metal fixed to the electrode of the semiconductor element and the lead via a fixing material With a connection plate,
A semiconductor device, wherein a protrusion is provided by projecting the metal connection plate closer to the semiconductor element than the end of the lead in the thickness direction. 前記固着材は半田であることを特徴とする請求項１に記載の半導体装置。   The semiconductor device according to claim 1, wherein the fixing material is solder. 前記半導体素子の電極と前記金属接続板とを接合される前記固着材よりも、前記リードと前記金属接続板とを接合させる前記固着材の方が多量であることを特徴とする請求項１または請求項２に記載の半導体装置。 Said than the fixing member and the electrode of the semiconductor element is bonded to said metal connecting plate, according to claim 1 towards the fixing member for bonding said lead and said metal connecting plate is characterized in that it is a larger or The semiconductor device according to claim 2 . 前記リードの端部を幅広にした接続部を設け、
前記金属接続板は前記接続部の主面に前記固着材を介して接合されることを特徴とする請求項１から請求項３の何れかに記載の半導体装置。 Provide a connection part that widens the end of the lead,
4. The semiconductor device according to claim 1, wherein the metal connection plate is bonded to a main surface of the connection portion via the fixing material. 5. 前記半導体素子は、ＭＯＳＦＥＴ、バイポーラトランジスタ、ＩＣ、ダイオードのいずれかであることを特徴とする請求項１から請求項４の何れかに記載の半導体装置。 The semiconductor device, MOSFET, bipolar transistor, IC, semiconductor device according to any one of claims 1 to 4, characterized in that either diode. アイランドの上面に配置された半導体素子の電極と、前記アイランドに一端が接近するリードとを、金属接続板にて固着材を介して接続する工程を備えた半導体装置の製造方法であり、
前記金属接続板を厚み方向に部分的に突出させた突起部を、前記リードに接触させることを特徴とする半導体装置の製造方法。 A method of manufacturing a semiconductor device comprising a step of connecting an electrode of a semiconductor element disposed on an upper surface of an island and a lead having one end approaching the island through a fixing material with a metal connection plate,
A method of manufacturing a semiconductor device, comprising: bringing a protrusion, which is formed by partially protruding the metal connection plate in a thickness direction, into contact with the lead. 前記接続する工程では、
前記半導体素子の前記電極および前記リードの端部に半田クリームを塗布し、前記半田クリームに前記金属接続板を載置した後に、前記半田クリームを溶融させることを特徴とする請求項６記載の半導体装置の製造方法。 In the connecting step,
7. The semiconductor according to claim 6, wherein a solder cream is applied to the electrode and the end of the lead of the semiconductor element, and the solder cream is melted after the metal connection plate is placed on the solder cream. Device manufacturing method. 前記リードに塗布される半田クリームの量は、前記半導体素子の前記電極に塗布される半田クリームよりも多量であることを特徴とする請求項７記載の半導体装置の製造方法。   8. The method of manufacturing a semiconductor device according to claim 7, wherein the amount of the solder cream applied to the lead is larger than the amount of the solder cream applied to the electrode of the semiconductor element. 前記リードに塗布された半田クリームが溶融した際に発生する表面張力により、前記金属接続板の前記突起部を、前記リードの端部に接触させることを特徴とする請求項７または請求項８記載の半導体装置の製造方法。
The surface tension of the solder cream applied to the lead is generated upon melting, the protruding portion of the metal connecting plate, according to claim 7 or claim 8, wherein the step of contacting an end portion of the lead Semiconductor device manufacturing method.
JP2008114300A 2008-04-24 2008-04-24 Semiconductor device and manufacturing method thereof Pending JP2009267054A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008114300A JP2009267054A (en) 2008-04-24 2008-04-24 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008114300A JP2009267054A (en) 2008-04-24 2008-04-24 Semiconductor device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JP2009267054A JP2009267054A (en) 2009-11-12
JP2009267054A5 true JP2009267054A5 (en) 2011-05-19

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Family Applications (1)

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JP2008114300A Pending JP2009267054A (en) 2008-04-24 2008-04-24 Semiconductor device and manufacturing method thereof

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5745238B2 (en) * 2010-07-30 2015-07-08 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー Semiconductor device and manufacturing method thereof
JP2013143519A (en) 2012-01-12 2013-07-22 Fuji Electric Co Ltd Connector and resin sealed type semiconductor device
JP5532147B1 (en) * 2012-07-02 2014-06-25 三菱電機株式会社 Semiconductor device and manufacturing method thereof
JP6512473B2 (en) * 2015-03-31 2019-05-15 新電元工業株式会社 Semiconductor device manufacturing method and semiconductor device manufacturing apparatus
US11069603B2 (en) 2017-06-20 2021-07-20 Sumitomo Electric Industries, Ltd. Semiconductor device
JP2021148458A (en) 2020-03-16 2021-09-27 株式会社東芝 Shape measurement method and shape measurement device
JP7531292B2 (en) 2020-03-16 2024-08-09 株式会社東芝 Method for manufacturing semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
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US4935803A (en) * 1988-09-09 1990-06-19 Motorola, Inc. Self-centering electrode for power devices
JP3274126B2 (en) * 2000-05-26 2002-04-15 東芝コンポーネンツ株式会社 Connector type semiconductor device
JP3639515B2 (en) * 2000-09-04 2005-04-20 三洋電機株式会社 Method for manufacturing MOSFET mounting structure
JP2004031515A (en) * 2002-06-24 2004-01-29 Toshiba Components Co Ltd Mos transistor and manufacture thereof

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