JP2009260294A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2009260294A5 JP2009260294A5 JP2009060636A JP2009060636A JP2009260294A5 JP 2009260294 A5 JP2009260294 A5 JP 2009260294A5 JP 2009060636 A JP2009060636 A JP 2009060636A JP 2009060636 A JP2009060636 A JP 2009060636A JP 2009260294 A5 JP2009260294 A5 JP 2009260294A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- insulating
- semiconductor layer
- thin film
- film transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 17
- 239000010409 thin film Substances 0.000 claims 10
- 239000000758 substrate Substances 0.000 claims 6
- 239000012535 impurity Substances 0.000 claims 5
- 239000010408 film Substances 0.000 claims 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
- 239000000919 ceramic Substances 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 239000000460 chlorine Substances 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009060636A JP5395471B2 (ja) | 2008-03-18 | 2009-03-13 | 薄膜トランジスタ |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008070451 | 2008-03-18 | ||
| JP2008070451 | 2008-03-18 | ||
| JP2009060636A JP5395471B2 (ja) | 2008-03-18 | 2009-03-13 | 薄膜トランジスタ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009260294A JP2009260294A (ja) | 2009-11-05 |
| JP2009260294A5 true JP2009260294A5 (OSRAM) | 2012-04-12 |
| JP5395471B2 JP5395471B2 (ja) | 2014-01-22 |
Family
ID=41087977
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009060636A Expired - Fee Related JP5395471B2 (ja) | 2008-03-18 | 2009-03-13 | 薄膜トランジスタ |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US7821012B2 (OSRAM) |
| JP (1) | JP5395471B2 (OSRAM) |
| CN (1) | CN101540341B (OSRAM) |
| TW (1) | TWI474486B (OSRAM) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7812348B2 (en) * | 2008-02-29 | 2010-10-12 | Semiconductor Energy Laboratory Co., Ltd. | Thin-film transistor and display device |
| US7968880B2 (en) | 2008-03-01 | 2011-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and display device |
| JP5411528B2 (ja) * | 2008-03-18 | 2014-02-12 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタ及び表示装置 |
| US7821012B2 (en) * | 2008-03-18 | 2010-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
| JP5436017B2 (ja) * | 2008-04-25 | 2014-03-05 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US8049215B2 (en) * | 2008-04-25 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
| US8039842B2 (en) * | 2008-05-22 | 2011-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and display device including thin film transistor |
| WO2009157573A1 (en) * | 2008-06-27 | 2009-12-30 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor, semiconductor device and electronic device |
| JP5509802B2 (ja) | 2009-11-13 | 2014-06-04 | ソニー株式会社 | 無線通信システム、無線通信装置、無線通信方法、およびプログラム |
| TWI535028B (zh) * | 2009-12-21 | 2016-05-21 | 半導體能源研究所股份有限公司 | 薄膜電晶體 |
| JP5445207B2 (ja) * | 2010-02-17 | 2014-03-19 | 三菱電機株式会社 | 薄膜トランジスタ及びその製造方法 |
| US20120282742A1 (en) * | 2010-03-15 | 2012-11-08 | Canon Kabushiki Kaisha | Semiconductor device and method for manufacturing the same |
| JP2011216864A (ja) * | 2010-03-15 | 2011-10-27 | Canon Inc | 半導体装置とその製造方法 |
| TWI545652B (zh) * | 2011-03-25 | 2016-08-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| TWI605590B (zh) * | 2011-09-29 | 2017-11-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| TWI627483B (zh) * | 2012-11-28 | 2018-06-21 | 半導體能源研究所股份有限公司 | 顯示裝置及電視接收機 |
| CN103107202B (zh) * | 2013-01-23 | 2016-04-27 | 深圳市华星光电技术有限公司 | 一种薄膜晶体管结构、液晶显示装置和一种制造方法 |
| US8912542B2 (en) | 2013-01-23 | 2014-12-16 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | TFT structure and LCD device |
| CN103199112B (zh) * | 2013-03-20 | 2017-02-15 | 北京京东方光电科技有限公司 | 一种阵列基板及其制备方法和显示面板 |
| US10328507B2 (en) * | 2013-12-30 | 2019-06-25 | Robert Bosch Tool Corporation | Airflow and illumination system for a table saw |
| WO2022009823A1 (ja) * | 2020-07-07 | 2022-01-13 | 凸版印刷株式会社 | 薄膜トランジスタ、薄膜トランジスタアレイおよび薄膜トランジスタの製造方法 |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56122123A (en) | 1980-03-03 | 1981-09-25 | Shunpei Yamazaki | Semiamorphous semiconductor |
| JP2839529B2 (ja) | 1989-02-17 | 1998-12-16 | 株式会社東芝 | 薄膜トランジスタ |
| US5221631A (en) | 1989-02-17 | 1993-06-22 | International Business Machines Corporation | Method of fabricating a thin film transistor having a silicon carbide buffer layer |
| JPH05129608A (ja) | 1991-10-31 | 1993-05-25 | Sharp Corp | 半導体装置 |
| EP0535979A3 (en) | 1991-10-02 | 1993-07-21 | Sharp Kabushiki Kaisha | A thin film transistor and a method for producing the same |
| JPH05107560A (ja) * | 1991-10-21 | 1993-04-30 | Hitachi Ltd | 液晶表示装置とその製造方法 |
| JPH05190857A (ja) * | 1992-01-10 | 1993-07-30 | Toshiba Corp | 薄膜トランジスタ |
| CN1095204C (zh) * | 1993-03-12 | 2002-11-27 | 株式会社半导体能源研究所 | 半导体器件和晶体管 |
| US5473168A (en) | 1993-04-30 | 1995-12-05 | Sharp Kabushiki Kaisha | Thin film transistor |
| KR950000937U (ko) | 1993-06-30 | 1995-01-03 | 운전식 균형장치 | |
| JPH07131030A (ja) | 1993-11-05 | 1995-05-19 | Sony Corp | 表示用薄膜半導体装置及びその製造方法 |
| JPH08201851A (ja) | 1995-01-31 | 1996-08-09 | Sharp Corp | アクティブマトリクス基板 |
| JP3476320B2 (ja) * | 1996-02-23 | 2003-12-10 | 株式会社半導体エネルギー研究所 | 半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法 |
| US5920772A (en) | 1997-06-27 | 1999-07-06 | Industrial Technology Research Institute | Method of fabricating a hybrid polysilicon/amorphous silicon TFT |
| KR100257158B1 (ko) * | 1997-06-30 | 2000-05-15 | 김영환 | 박막 트랜지스터 및 그의 제조 방법 |
| JP2001053283A (ja) | 1999-08-12 | 2001-02-23 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
| JP3538084B2 (ja) * | 1999-09-17 | 2004-06-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TW577176B (en) | 2003-03-31 | 2004-02-21 | Ind Tech Res Inst | Structure of thin-film transistor, and the manufacturing method thereof |
| JP4748954B2 (ja) | 2003-07-14 | 2011-08-17 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
| JP5159021B2 (ja) | 2003-12-02 | 2013-03-06 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TWI372463B (en) | 2003-12-02 | 2012-09-11 | Semiconductor Energy Lab | Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device |
| KR101050351B1 (ko) | 2004-09-24 | 2011-07-19 | 엘지디스플레이 주식회사 | 박막트랜지스터 및 그 제조방법 |
| US8309953B2 (en) * | 2006-01-09 | 2012-11-13 | Technion Research And Development Foundation Ltd. | Transistor structures and methods of fabrication thereof |
| JP2008091599A (ja) | 2006-10-02 | 2008-04-17 | Sony Corp | 薄膜トランジスタおよびその製造方法ならびに表示装置 |
| JP2008140984A (ja) * | 2006-12-01 | 2008-06-19 | Sharp Corp | 半導体素子、半導体素子の製造方法、及び表示装置 |
| US7812348B2 (en) | 2008-02-29 | 2010-10-12 | Semiconductor Energy Laboratory Co., Ltd. | Thin-film transistor and display device |
| US7786485B2 (en) | 2008-02-29 | 2010-08-31 | Semicondutor Energy Laboratory Co., Ltd. | Thin-film transistor and display device |
| US7821012B2 (en) | 2008-03-18 | 2010-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
| US8049215B2 (en) | 2008-04-25 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
| US8039842B2 (en) | 2008-05-22 | 2011-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and display device including thin film transistor |
-
2009
- 2009-03-04 US US12/397,460 patent/US7821012B2/en not_active Expired - Fee Related
- 2009-03-06 TW TW98107350A patent/TWI474486B/zh not_active IP Right Cessation
- 2009-03-06 CN CN2009100079737A patent/CN101540341B/zh not_active Expired - Fee Related
- 2009-03-13 JP JP2009060636A patent/JP5395471B2/ja not_active Expired - Fee Related
-
2010
- 2010-10-06 US US12/899,089 patent/US8207538B2/en not_active Expired - Fee Related