JP5395471B2 - 薄膜トランジスタ - Google Patents

薄膜トランジスタ Download PDF

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Publication number
JP5395471B2
JP5395471B2 JP2009060636A JP2009060636A JP5395471B2 JP 5395471 B2 JP5395471 B2 JP 5395471B2 JP 2009060636 A JP2009060636 A JP 2009060636A JP 2009060636 A JP2009060636 A JP 2009060636A JP 5395471 B2 JP5395471 B2 JP 5395471B2
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JP
Japan
Prior art keywords
layer
semiconductor layer
thin film
film transistor
microcrystalline semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009060636A
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English (en)
Japanese (ja)
Other versions
JP2009260294A (ja
JP2009260294A5 (OSRAM
Inventor
安弘 神保
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2009060636A priority Critical patent/JP5395471B2/ja
Publication of JP2009260294A publication Critical patent/JP2009260294A/ja
Publication of JP2009260294A5 publication Critical patent/JP2009260294A5/ja
Application granted granted Critical
Publication of JP5395471B2 publication Critical patent/JP5395471B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon

Landscapes

  • Thin Film Transistor (AREA)
JP2009060636A 2008-03-18 2009-03-13 薄膜トランジスタ Expired - Fee Related JP5395471B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009060636A JP5395471B2 (ja) 2008-03-18 2009-03-13 薄膜トランジスタ

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008070451 2008-03-18
JP2008070451 2008-03-18
JP2009060636A JP5395471B2 (ja) 2008-03-18 2009-03-13 薄膜トランジスタ

Publications (3)

Publication Number Publication Date
JP2009260294A JP2009260294A (ja) 2009-11-05
JP2009260294A5 JP2009260294A5 (OSRAM) 2012-04-12
JP5395471B2 true JP5395471B2 (ja) 2014-01-22

Family

ID=41087977

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009060636A Expired - Fee Related JP5395471B2 (ja) 2008-03-18 2009-03-13 薄膜トランジスタ

Country Status (4)

Country Link
US (2) US7821012B2 (OSRAM)
JP (1) JP5395471B2 (OSRAM)
CN (1) CN101540341B (OSRAM)
TW (1) TWI474486B (OSRAM)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7812348B2 (en) * 2008-02-29 2010-10-12 Semiconductor Energy Laboratory Co., Ltd. Thin-film transistor and display device
US7968880B2 (en) 2008-03-01 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and display device
US7821012B2 (en) * 2008-03-18 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
JP5411528B2 (ja) * 2008-03-18 2014-02-12 株式会社半導体エネルギー研究所 薄膜トランジスタ及び表示装置
JP5436017B2 (ja) * 2008-04-25 2014-03-05 株式会社半導体エネルギー研究所 半導体装置
US8049215B2 (en) * 2008-04-25 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8039842B2 (en) * 2008-05-22 2011-10-18 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and display device including thin film transistor
KR101602252B1 (ko) * 2008-06-27 2016-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터, 반도체장치 및 전자기기
JP5509802B2 (ja) 2009-11-13 2014-06-04 ソニー株式会社 無線通信システム、無線通信装置、無線通信方法、およびプログラム
TWI535028B (zh) * 2009-12-21 2016-05-21 半導體能源研究所股份有限公司 薄膜電晶體
JP5445207B2 (ja) * 2010-02-17 2014-03-19 三菱電機株式会社 薄膜トランジスタ及びその製造方法
US20120282742A1 (en) * 2010-03-15 2012-11-08 Canon Kabushiki Kaisha Semiconductor device and method for manufacturing the same
JP2011216864A (ja) * 2010-03-15 2011-10-27 Canon Inc 半導体装置とその製造方法
TWI545652B (zh) * 2011-03-25 2016-08-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US8716708B2 (en) * 2011-09-29 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI627483B (zh) 2012-11-28 2018-06-21 半導體能源研究所股份有限公司 顯示裝置及電視接收機
CN103107202B (zh) * 2013-01-23 2016-04-27 深圳市华星光电技术有限公司 一种薄膜晶体管结构、液晶显示装置和一种制造方法
US8912542B2 (en) 2013-01-23 2014-12-16 Shenzhen China Star Optoelectronics Technology Co., Ltd. TFT structure and LCD device
CN103199112B (zh) * 2013-03-20 2017-02-15 北京京东方光电科技有限公司 一种阵列基板及其制备方法和显示面板
EP3099456B1 (en) * 2013-12-30 2020-07-15 Robert Bosch GmbH Airflow and illumination system for a table saw
CN115917759A (zh) * 2020-07-07 2023-04-04 凸版印刷株式会社 薄膜晶体管、薄膜晶体管阵列以及薄膜晶体管的制造方法

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56122123A (en) 1980-03-03 1981-09-25 Shunpei Yamazaki Semiamorphous semiconductor
US5221631A (en) 1989-02-17 1993-06-22 International Business Machines Corporation Method of fabricating a thin film transistor having a silicon carbide buffer layer
JP2839529B2 (ja) 1989-02-17 1998-12-16 株式会社東芝 薄膜トランジスタ
EP0535979A3 (en) 1991-10-02 1993-07-21 Sharp Kabushiki Kaisha A thin film transistor and a method for producing the same
JPH05129608A (ja) 1991-10-31 1993-05-25 Sharp Corp 半導体装置
JPH05107560A (ja) * 1991-10-21 1993-04-30 Hitachi Ltd 液晶表示装置とその製造方法
JPH05190857A (ja) * 1992-01-10 1993-07-30 Toshiba Corp 薄膜トランジスタ
CN1542929B (zh) * 1993-03-12 2012-05-30 株式会社半导体能源研究所 半导体器件的制造方法
US5473168A (en) 1993-04-30 1995-12-05 Sharp Kabushiki Kaisha Thin film transistor
KR950000937U (ko) 1993-06-30 1995-01-03 운전식 균형장치
JPH07131030A (ja) 1993-11-05 1995-05-19 Sony Corp 表示用薄膜半導体装置及びその製造方法
JPH08201851A (ja) 1995-01-31 1996-08-09 Sharp Corp アクティブマトリクス基板
JP3476320B2 (ja) * 1996-02-23 2003-12-10 株式会社半導体エネルギー研究所 半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法
US5920772A (en) 1997-06-27 1999-07-06 Industrial Technology Research Institute Method of fabricating a hybrid polysilicon/amorphous silicon TFT
KR100257158B1 (ko) * 1997-06-30 2000-05-15 김영환 박막 트랜지스터 및 그의 제조 방법
JP2001053283A (ja) 1999-08-12 2001-02-23 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP3538084B2 (ja) * 1999-09-17 2004-06-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW577176B (en) 2003-03-31 2004-02-21 Ind Tech Res Inst Structure of thin-film transistor, and the manufacturing method thereof
JP4748954B2 (ja) 2003-07-14 2011-08-17 株式会社半導体エネルギー研究所 液晶表示装置
JP5159021B2 (ja) 2003-12-02 2013-03-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI372463B (en) 2003-12-02 2012-09-11 Semiconductor Energy Lab Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device
KR101050351B1 (ko) 2004-09-24 2011-07-19 엘지디스플레이 주식회사 박막트랜지스터 및 그 제조방법
US8309953B2 (en) * 2006-01-09 2012-11-13 Technion Research And Development Foundation Ltd. Transistor structures and methods of fabrication thereof
JP2008091599A (ja) 2006-10-02 2008-04-17 Sony Corp 薄膜トランジスタおよびその製造方法ならびに表示装置
JP2008140984A (ja) * 2006-12-01 2008-06-19 Sharp Corp 半導体素子、半導体素子の製造方法、及び表示装置
US7812348B2 (en) 2008-02-29 2010-10-12 Semiconductor Energy Laboratory Co., Ltd. Thin-film transistor and display device
US7786485B2 (en) 2008-02-29 2010-08-31 Semicondutor Energy Laboratory Co., Ltd. Thin-film transistor and display device
US7821012B2 (en) 2008-03-18 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8049215B2 (en) 2008-04-25 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8039842B2 (en) 2008-05-22 2011-10-18 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and display device including thin film transistor

Also Published As

Publication number Publication date
TW201001713A (en) 2010-01-01
CN101540341A (zh) 2009-09-23
TWI474486B (zh) 2015-02-21
US8207538B2 (en) 2012-06-26
US20090236601A1 (en) 2009-09-24
US20110017992A1 (en) 2011-01-27
CN101540341B (zh) 2013-03-13
US7821012B2 (en) 2010-10-26
JP2009260294A (ja) 2009-11-05

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