JP2009246318A5 - - Google Patents
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- Publication number
- JP2009246318A5 JP2009246318A5 JP2008094501A JP2008094501A JP2009246318A5 JP 2009246318 A5 JP2009246318 A5 JP 2009246318A5 JP 2008094501 A JP2008094501 A JP 2008094501A JP 2008094501 A JP2008094501 A JP 2008094501A JP 2009246318 A5 JP2009246318 A5 JP 2009246318A5
- Authority
- JP
- Japan
- Prior art keywords
- processing
- processing chamber
- gas supply
- gas
- processing gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 5
- 239000010409 thin film Substances 0.000 claims 4
- 238000000034 method Methods 0.000 claims 3
- 238000007599 discharging Methods 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008094501A JP5306691B2 (ja) | 2008-04-01 | 2008-04-01 | 半導体装置の製造方法、基板処理方法および基板処理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008094501A JP5306691B2 (ja) | 2008-04-01 | 2008-04-01 | 半導体装置の製造方法、基板処理方法および基板処理装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012279074A Division JP5557896B2 (ja) | 2012-12-21 | 2012-12-21 | 半導体装置の製造方法、基板処理方法および基板処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009246318A JP2009246318A (ja) | 2009-10-22 |
| JP2009246318A5 true JP2009246318A5 (cg-RX-API-DMAC7.html) | 2011-01-27 |
| JP5306691B2 JP5306691B2 (ja) | 2013-10-02 |
Family
ID=41307862
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008094501A Active JP5306691B2 (ja) | 2008-04-01 | 2008-04-01 | 半導体装置の製造方法、基板処理方法および基板処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5306691B2 (cg-RX-API-DMAC7.html) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009253195A (ja) * | 2008-04-10 | 2009-10-29 | Toshiba Corp | 半導体装置の製造方法、及び半導体装置 |
| JP5541223B2 (ja) * | 2010-07-29 | 2014-07-09 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| CN102345111B (zh) * | 2010-07-29 | 2015-03-04 | 东京毅力科创株式会社 | 成膜方法和成膜装置 |
| WO2014080785A1 (ja) | 2012-11-26 | 2014-05-30 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置及び記録媒体 |
| JP5557896B2 (ja) * | 2012-12-21 | 2014-07-23 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法および基板処理装置 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2001245388A1 (en) * | 2000-03-07 | 2001-09-17 | Asm America, Inc. | Graded thin films |
| JP3937892B2 (ja) * | 2002-04-01 | 2007-06-27 | 日本電気株式会社 | 薄膜形成方法および半導体装置の製造方法 |
| JP2005235987A (ja) * | 2004-02-19 | 2005-09-02 | Toshiba Corp | 半導体記憶装置及び半導体記憶装置の製造方法 |
| JP2006261434A (ja) * | 2005-03-17 | 2006-09-28 | L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude | シリコン酸化膜の形成方法 |
| JP4711733B2 (ja) * | 2005-05-12 | 2011-06-29 | 株式会社Adeka | 酸化珪素系薄膜の製造方法 |
| JP2008053683A (ja) * | 2006-07-27 | 2008-03-06 | Matsushita Electric Ind Co Ltd | 絶縁膜形成方法、半導体装置、および基板処理装置 |
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2008
- 2008-04-01 JP JP2008094501A patent/JP5306691B2/ja active Active