JP2009231842A - 電気機械的スイッチ及びこれの形成方法 - Google Patents

電気機械的スイッチ及びこれの形成方法 Download PDF

Info

Publication number
JP2009231842A
JP2009231842A JP2009070509A JP2009070509A JP2009231842A JP 2009231842 A JP2009231842 A JP 2009231842A JP 2009070509 A JP2009070509 A JP 2009070509A JP 2009070509 A JP2009070509 A JP 2009070509A JP 2009231842 A JP2009231842 A JP 2009231842A
Authority
JP
Japan
Prior art keywords
memory device
line
electrode
storage node
beam line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009070509A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009231842A5 (enExample
Inventor
Min-Sang Kim
旻相 金
Ji-Myoung Lee
志明 李
Hyun-Jun Bae
賢俊 裴
Douin Kin
洞院 金
Takashi Jo
俊 徐
Weonwi Jang
原▲ウィ▼ 張
Keun-Hwi Cho
槿彙 趙
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020080026812A external-priority patent/KR20090101587A/ko
Priority claimed from KR1020080085041A external-priority patent/KR101419894B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2009231842A publication Critical patent/JP2009231842A/ja
Publication of JP2009231842A5 publication Critical patent/JP2009231842A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Micromachines (AREA)
JP2009070509A 2008-03-24 2009-03-23 電気機械的スイッチ及びこれの形成方法 Pending JP2009231842A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020080026812A KR20090101587A (ko) 2008-03-24 2008-03-24 전기적 기계적 소자를 포함하는 디램 및 이의 제조 방법
KR1020080085041A KR101419894B1 (ko) 2008-08-29 2008-08-29 전기적 기계적 소자를 포함하는 디램 및 이의 제조 방법
US12/392,780 US7929341B2 (en) 2008-03-24 2009-02-25 Electromechanical switch and method of forming the same

Publications (2)

Publication Number Publication Date
JP2009231842A true JP2009231842A (ja) 2009-10-08
JP2009231842A5 JP2009231842A5 (enExample) 2012-04-19

Family

ID=41088758

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009070509A Pending JP2009231842A (ja) 2008-03-24 2009-03-23 電気機械的スイッチ及びこれの形成方法

Country Status (3)

Country Link
US (2) US7929341B2 (enExample)
JP (1) JP2009231842A (enExample)
TW (1) TW201001678A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022533780A (ja) * 2020-01-17 2022-07-25 長江存儲科技有限責任公司 高度なメモリ構造およびデバイス

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101298114B1 (ko) * 2009-06-02 2013-08-20 한국과학기술원 Mems 또는 mems 소자의 패키지 및 패키징 방법
KR20110004966A (ko) * 2009-07-09 2011-01-17 삼성전자주식회사 디램 소자 및 이의 제조 방법
US8605499B2 (en) 2011-04-22 2013-12-10 International Business Machines Corporation Resonance nanoelectromechanical systems
US9162867B2 (en) 2011-12-13 2015-10-20 Intel Corporation Through-silicon via resonators in chip packages and methods of assembling same
CN108900183B (zh) * 2018-07-11 2020-10-23 电子科技大学 一种基于介质集成悬置线的低损耗开关电路

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1197647A (ja) * 1997-09-24 1999-04-09 Nec Corp 容量及びその製造方法
US6016279A (en) * 1998-03-30 2000-01-18 Vanguard International Semiconductor Corporation DRAM sensing scheme and isolation circuit
JP2002289811A (ja) * 2001-03-28 2002-10-04 Toshiba Corp 強誘電体メモリ及びそのデータ書き込み方法
US6473361B1 (en) * 2000-11-10 2002-10-29 Xerox Corporation Electromechanical memory cell
JP2004063605A (ja) * 2002-07-26 2004-02-26 Renesas Technology Corp 半導体装置
JP2007036201A (ja) * 2005-06-22 2007-02-08 Matsushita Electric Ind Co Ltd 電気機械メモリ、それを用いた電気回路及び電気機械メモリの駆動方法
JP2007152554A (ja) * 2005-05-27 2007-06-21 Semiconductor Energy Lab Co Ltd 半導体装置
JP2008503075A (ja) * 2004-06-15 2008-01-31 キャベンディッシュ−キネティックス・ベスローテン・フェンノートシャップ 微小機械素子を制御するための装置及び方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6115231A (en) * 1997-11-25 2000-09-05 Tdk Corporation Electrostatic relay
US6185125B1 (en) * 1999-12-15 2001-02-06 Winbond Electronics Corp. Circuit for measuring the data retention time of a dynamic random-access memory cell
US6307169B1 (en) * 2000-02-01 2001-10-23 Motorola Inc. Micro-electromechanical switch
US6574130B2 (en) 2001-07-25 2003-06-03 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
JP4447940B2 (ja) 2004-02-27 2010-04-07 富士通株式会社 マイクロスイッチング素子製造方法およびマイクロスイッチング素子
KR100661349B1 (ko) 2004-12-17 2006-12-27 삼성전자주식회사 Ｍｅｍｓ 스위치 및 그 제조 방법
KR20050113167A (ko) 2005-05-18 2005-12-01 인터내셔널 비지네스 머신즈 코포레이션 마이크로머신 전기화학적 임의 액세스 메모리 어레이 및이의 제작 방법
KR100621827B1 (ko) 2005-08-08 2006-09-11 한국과학기술원 비휘발성 미케니컬 메모리
KR100818239B1 (ko) 2007-04-09 2008-04-02 한국과학기술원 기계적인 스위치를 이용한 비휘발성 메모리 셀 및 그동작방법

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1197647A (ja) * 1997-09-24 1999-04-09 Nec Corp 容量及びその製造方法
US6016279A (en) * 1998-03-30 2000-01-18 Vanguard International Semiconductor Corporation DRAM sensing scheme and isolation circuit
US6473361B1 (en) * 2000-11-10 2002-10-29 Xerox Corporation Electromechanical memory cell
JP2002289811A (ja) * 2001-03-28 2002-10-04 Toshiba Corp 強誘電体メモリ及びそのデータ書き込み方法
JP2004063605A (ja) * 2002-07-26 2004-02-26 Renesas Technology Corp 半導体装置
JP2008503075A (ja) * 2004-06-15 2008-01-31 キャベンディッシュ−キネティックス・ベスローテン・フェンノートシャップ 微小機械素子を制御するための装置及び方法
JP2007152554A (ja) * 2005-05-27 2007-06-21 Semiconductor Energy Lab Co Ltd 半導体装置
JP2007036201A (ja) * 2005-06-22 2007-02-08 Matsushita Electric Ind Co Ltd 電気機械メモリ、それを用いた電気回路及び電気機械メモリの駆動方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022533780A (ja) * 2020-01-17 2022-07-25 長江存儲科技有限責任公司 高度なメモリ構造およびデバイス
JP7412449B2 (ja) 2020-01-17 2024-01-12 長江存儲科技有限責任公司 高度なメモリ構造およびデバイス

Also Published As

Publication number Publication date
US20110182111A1 (en) 2011-07-28
TW201001678A (en) 2010-01-01
US8270211B2 (en) 2012-09-18
US7929341B2 (en) 2011-04-19
US20090237980A1 (en) 2009-09-24

Similar Documents

Publication Publication Date Title
CN115835626B (zh) 3d堆叠的半导体器件、3d存储器及其制备方法、电子设备
JP2010135785A (ja) スイッチ及びその形成方法
US7952140B2 (en) Methods of fabricating semiconductor devices having multiple channel transistors and semiconductor devices fabricated thereby
US9177960B2 (en) Method of forming semiconductor device
JPH0982912A (ja) 半導体記憶装置及びその製造方法
CN104103577A (zh) 具有气隙的半导体器件及其制造方法
JP2009231842A (ja) 電気機械的スイッチ及びこれの形成方法
US12127398B2 (en) Method for manufacturing memory using pseudo bit line structures and sacrificial layers
JP2007036201A (ja) 電気機械メモリ、それを用いた電気回路及び電気機械メモリの駆動方法
CN116322041A (zh) 存储器及其制造方法、电子设备
WO2022052627A1 (zh) 存储器的制造方法和存储器
KR20110004966A (ko) 디램 소자 및 이의 제조 방법
CN117316974A (zh) 半导体结构及其制作方法、存储器
WO2022062547A1 (zh) 存储器的制造方法和存储器
JP2008530813A (ja) キャパシタンスを増大させた埋め込み型ｄｒａｍ及びその製造方法
CN101582296B (zh) 机电开关及其形成方法
CN113540026B (zh) 位线结构、其制作方法、半导体存储器及电子设备
KR100532959B1 (ko) 반도체 소자의 캐패시터 형성방법
US8432723B2 (en) Nano-electro-mechanical DRAM cell
KR20030002202A (ko) 복합 반도체 메모리소자의 제조방법
KR20150117770A (ko) 반도체 소자 및 그 제조 방법
CN113540027B (zh) 位线结构、其制作方法、半导体存储器及电子设备
TWI856686B (zh) 半導體結構及其形成方法、布局結構
CN115955838A (zh) 半导体结构的制造方法及半导体结构
CN119584551A (zh) 半导体器件、存储器系统以及半导体器件的制造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120306

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120306

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130904

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130910

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20140225