TW201001678A - Electromechanical switch and method of forming the same - Google Patents
Electromechanical switch and method of forming the same Download PDFInfo
- Publication number
- TW201001678A TW201001678A TW098109588A TW98109588A TW201001678A TW 201001678 A TW201001678 A TW 201001678A TW 098109588 A TW098109588 A TW 098109588A TW 98109588 A TW98109588 A TW 98109588A TW 201001678 A TW201001678 A TW 201001678A
- Authority
- TW
- Taiwan
- Prior art keywords
- memory device
- electrode
- line
- quot
- memory
- Prior art date
Links
- 238000000034 method Methods 0.000 title description 19
- 239000010410 layer Substances 0.000 claims description 231
- 239000003990 capacitor Substances 0.000 claims description 55
- 239000000758 substrate Substances 0.000 claims description 55
- 239000011229 interlayer Substances 0.000 claims description 40
- 239000000463 material Substances 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000004033 plastic Substances 0.000 claims description 9
- 229920003023 plastic Polymers 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 7
- 239000012212 insulator Substances 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 4
- 206010011469 Crying Diseases 0.000 claims 1
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- 230000030279 gene silencing Effects 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 239000000725 suspension Substances 0.000 description 8
- 238000002955 isolation Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 239000010936 titanium Substances 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910001092 metal group alloy Inorganic materials 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 101100311260 Caenorhabditis elegans sti-1 gene Proteins 0.000 description 1
- 241000237536 Mytilus edulis Species 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 235000009470 Theobroma cacao Nutrition 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 244000240602 cacao Species 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012633 leachable Substances 0.000 description 1
- 235000013372 meat Nutrition 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 235000020638 mussel Nutrition 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920005553 polystyrene-acrylate Polymers 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Micromachines (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020080026812A KR20090101587A (ko) | 2008-03-24 | 2008-03-24 | 전기적 기계적 소자를 포함하는 디램 및 이의 제조 방법 |
| KR1020080085041A KR101419894B1 (ko) | 2008-08-29 | 2008-08-29 | 전기적 기계적 소자를 포함하는 디램 및 이의 제조 방법 |
| US12/392,780 US7929341B2 (en) | 2008-03-24 | 2009-02-25 | Electromechanical switch and method of forming the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201001678A true TW201001678A (en) | 2010-01-01 |
Family
ID=41088758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098109588A TW201001678A (en) | 2008-03-24 | 2009-03-24 | Electromechanical switch and method of forming the same |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US7929341B2 (enExample) |
| JP (1) | JP2009231842A (enExample) |
| TW (1) | TW201001678A (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101298114B1 (ko) * | 2009-06-02 | 2013-08-20 | 한국과학기술원 | Mems 또는 mems 소자의 패키지 및 패키징 방법 |
| KR20110004966A (ko) * | 2009-07-09 | 2011-01-17 | 삼성전자주식회사 | 디램 소자 및 이의 제조 방법 |
| US8605499B2 (en) | 2011-04-22 | 2013-12-10 | International Business Machines Corporation | Resonance nanoelectromechanical systems |
| US9162867B2 (en) | 2011-12-13 | 2015-10-20 | Intel Corporation | Through-silicon via resonators in chip packages and methods of assembling same |
| CN108900183B (zh) * | 2018-07-11 | 2020-10-23 | 电子科技大学 | 一种基于介质集成悬置线的低损耗开关电路 |
| WO2021142776A1 (en) * | 2020-01-17 | 2021-07-22 | Yangtze Memory Technologies Co., Ltd. | Advanced memory structure and device |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3111940B2 (ja) * | 1997-09-24 | 2000-11-27 | 日本電気株式会社 | 容量及びその製造方法 |
| US6115231A (en) * | 1997-11-25 | 2000-09-05 | Tdk Corporation | Electrostatic relay |
| US6016279A (en) * | 1998-03-30 | 2000-01-18 | Vanguard International Semiconductor Corporation | DRAM sensing scheme and isolation circuit |
| US6185125B1 (en) * | 1999-12-15 | 2001-02-06 | Winbond Electronics Corp. | Circuit for measuring the data retention time of a dynamic random-access memory cell |
| US6307169B1 (en) * | 2000-02-01 | 2001-10-23 | Motorola Inc. | Micro-electromechanical switch |
| US6473361B1 (en) * | 2000-11-10 | 2002-10-29 | Xerox Corporation | Electromechanical memory cell |
| JP2002289811A (ja) * | 2001-03-28 | 2002-10-04 | Toshiba Corp | 強誘電体メモリ及びそのデータ書き込み方法 |
| US6574130B2 (en) | 2001-07-25 | 2003-06-03 | Nantero, Inc. | Hybrid circuit having nanotube electromechanical memory |
| JP2004063605A (ja) | 2002-07-26 | 2004-02-26 | Renesas Technology Corp | 半導体装置 |
| JP4447940B2 (ja) | 2004-02-27 | 2010-04-07 | 富士通株式会社 | マイクロスイッチング素子製造方法およびマイクロスイッチング素子 |
| GB0413341D0 (en) * | 2004-06-15 | 2004-07-21 | Cavendish Kinetics B V | Arrangement and method for controlling a micromechanical element |
| KR100661349B1 (ko) | 2004-12-17 | 2006-12-27 | 삼성전자주식회사 | Ｍｅｍｓ 스위치 및 그 제조 방법 |
| KR20050113167A (ko) | 2005-05-18 | 2005-12-01 | 인터내셔널 비지네스 머신즈 코포레이션 | 마이크로머신 전기화학적 임의 액세스 메모리 어레이 및이의 제작 방법 |
| JP2007152554A (ja) * | 2005-05-27 | 2007-06-21 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP5054936B2 (ja) * | 2005-06-22 | 2012-10-24 | パナソニック株式会社 | 電気機械メモリ、それを用いた電気回路及び電気機械メモリの駆動方法 |
| KR100621827B1 (ko) | 2005-08-08 | 2006-09-11 | 한국과학기술원 | 비휘발성 미케니컬 메모리 |
| KR100818239B1 (ko) | 2007-04-09 | 2008-04-02 | 한국과학기술원 | 기계적인 스위치를 이용한 비휘발성 메모리 셀 및 그동작방법 |
-
2009
- 2009-02-25 US US12/392,780 patent/US7929341B2/en active Active
- 2009-03-23 JP JP2009070509A patent/JP2009231842A/ja active Pending
- 2009-03-24 TW TW098109588A patent/TW201001678A/zh unknown
-
2011
- 2011-04-08 US US13/082,605 patent/US8270211B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009231842A (ja) | 2009-10-08 |
| US20110182111A1 (en) | 2011-07-28 |
| US8270211B2 (en) | 2012-09-18 |
| US7929341B2 (en) | 2011-04-19 |
| US20090237980A1 (en) | 2009-09-24 |
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