JP2009231842A5 - - Google Patents

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Publication number
JP2009231842A5
JP2009231842A5 JP2009070509A JP2009070509A JP2009231842A5 JP 2009231842 A5 JP2009231842 A5 JP 2009231842A5 JP 2009070509 A JP2009070509 A JP 2009070509A JP 2009070509 A JP2009070509 A JP 2009070509A JP 2009231842 A5 JP2009231842 A5 JP 2009231842A5
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JP
Japan
Prior art keywords
electrode
memory device
storage node
memory
distance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009070509A
Other languages
English (en)
Japanese (ja)
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JP2009231842A (ja
Filing date
Publication date
Priority claimed from KR1020080026812A external-priority patent/KR20090101587A/ko
Priority claimed from KR1020080085041A external-priority patent/KR101419894B1/ko
Priority claimed from US12/392,780 external-priority patent/US7929341B2/en
Application filed filed Critical
Publication of JP2009231842A publication Critical patent/JP2009231842A/ja
Publication of JP2009231842A5 publication Critical patent/JP2009231842A5/ja
Pending legal-status Critical Current

Links

JP2009070509A 2008-03-24 2009-03-23 電気機械的スイッチ及びこれの形成方法 Pending JP2009231842A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020080026812A KR20090101587A (ko) 2008-03-24 2008-03-24 전기적 기계적 소자를 포함하는 디램 및 이의 제조 방법
KR1020080085041A KR101419894B1 (ko) 2008-08-29 2008-08-29 전기적 기계적 소자를 포함하는 디램 및 이의 제조 방법
US12/392,780 US7929341B2 (en) 2008-03-24 2009-02-25 Electromechanical switch and method of forming the same

Publications (2)

Publication Number Publication Date
JP2009231842A JP2009231842A (ja) 2009-10-08
JP2009231842A5 true JP2009231842A5 (enExample) 2012-04-19

Family

ID=41088758

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009070509A Pending JP2009231842A (ja) 2008-03-24 2009-03-23 電気機械的スイッチ及びこれの形成方法

Country Status (3)

Country Link
US (2) US7929341B2 (enExample)
JP (1) JP2009231842A (enExample)
TW (1) TW201001678A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101298114B1 (ko) * 2009-06-02 2013-08-20 한국과학기술원 Mems 또는 mems 소자의 패키지 및 패키징 방법
KR20110004966A (ko) * 2009-07-09 2011-01-17 삼성전자주식회사 디램 소자 및 이의 제조 방법
US8605499B2 (en) 2011-04-22 2013-12-10 International Business Machines Corporation Resonance nanoelectromechanical systems
WO2013089673A1 (en) * 2011-12-13 2013-06-20 Intel Corporation Through-silicon via resonators in chip packages and methods of assembling same
CN108900183B (zh) * 2018-07-11 2020-10-23 电子科技大学 一种基于介质集成悬置线的低损耗开关电路
WO2021142776A1 (en) * 2020-01-17 2021-07-22 Yangtze Memory Technologies Co., Ltd. Advanced memory structure and device

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3111940B2 (ja) * 1997-09-24 2000-11-27 日本電気株式会社 容量及びその製造方法
US6115231A (en) * 1997-11-25 2000-09-05 Tdk Corporation Electrostatic relay
US6016279A (en) * 1998-03-30 2000-01-18 Vanguard International Semiconductor Corporation DRAM sensing scheme and isolation circuit
US6185125B1 (en) * 1999-12-15 2001-02-06 Winbond Electronics Corp. Circuit for measuring the data retention time of a dynamic random-access memory cell
US6307169B1 (en) * 2000-02-01 2001-10-23 Motorola Inc. Micro-electromechanical switch
US6473361B1 (en) * 2000-11-10 2002-10-29 Xerox Corporation Electromechanical memory cell
JP2002289811A (ja) * 2001-03-28 2002-10-04 Toshiba Corp 強誘電体メモリ及びそのデータ書き込み方法
US6574130B2 (en) 2001-07-25 2003-06-03 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
JP2004063605A (ja) 2002-07-26 2004-02-26 Renesas Technology Corp 半導体装置
JP4447940B2 (ja) 2004-02-27 2010-04-07 富士通株式会社 マイクロスイッチング素子製造方法およびマイクロスイッチング素子
GB0413341D0 (en) * 2004-06-15 2004-07-21 Cavendish Kinetics B V Arrangement and method for controlling a micromechanical element
KR100661349B1 (ko) 2004-12-17 2006-12-27 삼성전자주식회사 Ｍｅｍｓ 스위치 및 그 제조 방법
KR20050113167A (ko) 2005-05-18 2005-12-01 인터내셔널 비지네스 머신즈 코포레이션 마이크로머신 전기화학적 임의 액세스 메모리 어레이 및이의 제작 방법
JP2007152554A (ja) * 2005-05-27 2007-06-21 Semiconductor Energy Lab Co Ltd 半導体装置
JP5054936B2 (ja) * 2005-06-22 2012-10-24 パナソニック株式会社 電気機械メモリ、それを用いた電気回路及び電気機械メモリの駆動方法
KR100621827B1 (ko) 2005-08-08 2006-09-11 한국과학기술원 비휘발성 미케니컬 메모리
KR100818239B1 (ko) 2007-04-09 2008-04-02 한국과학기술원 기계적인 스위치를 이용한 비휘발성 메모리 셀 및 그동작방법

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