JP2009231288A - 電界放出型電子源 - Google Patents
電界放出型電子源 Download PDFInfo
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- JP2009231288A JP2009231288A JP2009068674A JP2009068674A JP2009231288A JP 2009231288 A JP2009231288 A JP 2009231288A JP 2009068674 A JP2009068674 A JP 2009068674A JP 2009068674 A JP2009068674 A JP 2009068674A JP 2009231288 A JP2009231288 A JP 2009231288A
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- JP
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- Prior art keywords
- carbon nanotube
- field emission
- needle
- carbon
- electron source
- Prior art date
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 194
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 187
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 187
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 239000002238 carbon nanotube film Substances 0.000 description 24
- 238000000034 method Methods 0.000 description 17
- 239000000853 adhesive Substances 0.000 description 15
- 230000001070 adhesive effect Effects 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 11
- 239000003960 organic solvent Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 239000003054 catalyst Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000011065 in-situ storage Methods 0.000 description 4
- 238000009434 installation Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical group OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000001241 arc-discharge method Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000002079 double walled nanotube Substances 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- 238000001237 Raman spectrum Methods 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000002109 single walled nanotube Substances 0.000 description 2
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical compound CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 102000029749 Microtubule Human genes 0.000 description 1
- 108091022875 Microtubule Proteins 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 125000003158 alcohol group Chemical group 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 210000004688 microtubule Anatomy 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002048 multi walled nanotube Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30403—Field emission cathodes characterised by the emitter shape
- H01J2201/30407—Microengineered point emitters
- H01J2201/30415—Microengineered point emitters needle shaped
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30403—Field emission cathodes characterised by the emitter shape
- H01J2201/30434—Nanotubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
- H01J2201/30453—Carbon types
- H01J2201/30469—Carbon nanotubes (CNTs)
Landscapes
- Cold Cathode And The Manufacture (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
【解決手段】本発明の電界放出型電子源は、基板と、第一端及び第二端を含むカーボンナノチューブ針と、を含む。前記カーボンナノチューブ針の第一端は前記基板に電気接続されている。前記カーボンナノチューブ針の第二端において、一つのカーボンナノチューブが他のカーボンナノチューブより外部へ延伸している。前記カーボンナノチューブ針の第二端は円錐形に近似し、複数のカーボンナノチューブを含む。
【選択図】図1
Description
12 カーボンナノチューブ糸
122 第一端
124 第二端
126 カーボンナノチューブ
128 カーボンナノチューブ
14 導電基板
16 支持体
18 接着剤
22 第一電極
24 第二電極
28 カーボンナノチューブ糸
Claims (6)
- 基板と、第一端及び第二端を含むカーボンナノチューブ針と、を含み、
前記カーボンナノチューブ針の第一端は前記基板に電気接続され、
前記カーボンナノチューブ針の第二端において、一つのカーボンナノチューブが他のカーボンナノチューブより外部へ延伸していることを特徴とする電界放出型電子源。 - 前記カーボンナノチューブ針の第二端は円錐形に近似し、複数のカーボンナノチューブを含むことを特徴とする、請求項1に記載の電界放出型電子源。
- 前記カーボンナノチューブ針の直径は1μm〜20μm、その長さは0.01〜1mmであることを特徴とする、請求項1又は2に記載の電界放出型電子源。
- 前記カーボンナノチューブ針はカーボンナノチューブ糸を含むことを特徴とする、請求項1〜3のいずれか一項に記載の電界放出型電子源。
- 前記カーボンナノチューブ針の第二端におけるカーボンナノチューブは、二層又は三層のカーボンナノチューブであり、その直径が5nm以下であることを特徴とする、請求項1に記載の電界放出型電子源。
- 前記第二端におけるカーボンナノチューブ以外の前記カーボンナノチューブ針のカーボンナノチューブは五層以上のカーボンナノチューブであることを特徴とする、請求項1に記載の電界放出型電子源。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200810066123XA CN101540251B (zh) | 2008-03-19 | 2008-03-19 | 场发射电子源 |
CN200810066123.X | 2008-03-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009231288A true JP2009231288A (ja) | 2009-10-08 |
JP4960398B2 JP4960398B2 (ja) | 2012-06-27 |
Family
ID=41088167
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009068674A Active JP4960398B2 (ja) | 2008-03-19 | 2009-03-19 | 電界放出型電子源 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8013505B2 (ja) |
JP (1) | JP4960398B2 (ja) |
CN (1) | CN101540251B (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101499389B (zh) * | 2008-02-01 | 2011-03-23 | 鸿富锦精密工业(深圳)有限公司 | 电子发射器件 |
CN102394204B (zh) * | 2008-03-19 | 2014-10-08 | 清华大学 | 场发射电子源 |
CN101538031B (zh) * | 2008-03-19 | 2012-05-23 | 清华大学 | 碳纳米管针尖及其制备方法 |
CN101604603B (zh) * | 2008-06-13 | 2011-03-23 | 清华大学 | 场发射体及其制备方法 |
US9126836B2 (en) * | 2009-12-28 | 2015-09-08 | Korea University Research And Business Foundation | Method and device for CNT length control |
CN101880035A (zh) | 2010-06-29 | 2010-11-10 | 清华大学 | 碳纳米管结构 |
CN103187217B (zh) * | 2011-12-27 | 2015-11-25 | 清华大学 | 碳纳米管发射体 |
CN111048373B (zh) | 2018-10-12 | 2021-04-27 | 中国电子科技集团公司第三十八研究所 | 一种电子源再生方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11111158A (ja) * | 1997-10-03 | 1999-04-23 | Ise Electronics Corp | 電子銃 |
JP2002334663A (ja) * | 2001-03-09 | 2002-11-22 | Vacuum Products Kk | 荷電粒子発生装置及びその発生方法 |
JP2005243389A (ja) * | 2004-02-26 | 2005-09-08 | Daiken Kagaku Kogyo Kk | 電子源及びその製造方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6232706B1 (en) * | 1998-11-12 | 2001-05-15 | The Board Of Trustees Of The Leland Stanford Junior University | Self-oriented bundles of carbon nanotubes and method of making same |
US6504292B1 (en) * | 1999-07-15 | 2003-01-07 | Agere Systems Inc. | Field emitting device comprising metallized nanostructures and method for making the same |
JP2003123623A (ja) * | 2001-10-19 | 2003-04-25 | Noritake Itron Corp | 電子放出源用カーボンナノチューブおよびその製造方法 |
CN1433039A (zh) | 2002-01-07 | 2003-07-30 | 深圳大学光电子学研究所 | 基于纳米碳管场发射阵列的全彩色大面积平板显示器 |
JP4180289B2 (ja) * | 2002-03-18 | 2008-11-12 | 喜萬 中山 | ナノチューブ先鋭化方法 |
CN1282216C (zh) * | 2002-09-16 | 2006-10-25 | 清华大学 | 一种灯丝及其制备方法 |
CN1301212C (zh) * | 2002-09-17 | 2007-02-21 | 清华大学 | 一维纳米材料方向及形状调整方法 |
CN1282211C (zh) * | 2002-11-14 | 2006-10-25 | 清华大学 | 一种碳纳米管场发射装置 |
CN1530320A (zh) * | 2003-03-13 | 2004-09-22 | 鸿富锦精密工业(深圳)有限公司 | 一种碳纳米管材料及其制备方法 |
WO2005094298A2 (en) * | 2004-03-26 | 2005-10-13 | Foster-Miller, Inc. | Carbon nanotube-based electronic devices made by electronic deposition and applications thereof |
CN101042977B (zh) * | 2006-03-22 | 2011-12-21 | 清华大学 | 碳纳米管场发射电子源及其制造方法以及一场发射阵列 |
CN101086939B (zh) | 2006-06-09 | 2010-05-12 | 清华大学 | 场发射元件及其制备方法 |
CN101425439B (zh) * | 2007-11-02 | 2010-12-08 | 清华大学 | 一种场发射电子源的制备方法 |
CN101425435B (zh) * | 2007-11-02 | 2013-08-21 | 清华大学 | 场发射电子源及其制备方法 |
CN101425438B (zh) * | 2007-11-02 | 2011-03-30 | 鸿富锦精密工业(深圳)有限公司 | 一种场发射电子源的制备方法 |
CN101538031B (zh) * | 2008-03-19 | 2012-05-23 | 清华大学 | 碳纳米管针尖及其制备方法 |
-
2008
- 2008-03-19 CN CN200810066123XA patent/CN101540251B/zh active Active
- 2008-11-26 US US12/313,932 patent/US8013505B2/en active Active
-
2009
- 2009-03-19 JP JP2009068674A patent/JP4960398B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11111158A (ja) * | 1997-10-03 | 1999-04-23 | Ise Electronics Corp | 電子銃 |
JP2002334663A (ja) * | 2001-03-09 | 2002-11-22 | Vacuum Products Kk | 荷電粒子発生装置及びその発生方法 |
JP2005243389A (ja) * | 2004-02-26 | 2005-09-08 | Daiken Kagaku Kogyo Kk | 電子源及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN101540251B (zh) | 2012-03-28 |
CN101540251A (zh) | 2009-09-23 |
JP4960398B2 (ja) | 2012-06-27 |
US20090236961A1 (en) | 2009-09-24 |
US8013505B2 (en) | 2011-09-06 |
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