JP2009221101A - 結晶製造装置 - Google Patents
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- 239000013078 crystal Substances 0.000 title claims abstract description 265
- 239000002994 raw material Substances 0.000 claims abstract description 48
- 238000010438 heat treatment Methods 0.000 claims abstract description 43
- 238000001816 cooling Methods 0.000 claims abstract description 40
- 239000003507 refrigerant Substances 0.000 claims abstract description 34
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 claims abstract description 27
- 239000010955 niobium Substances 0.000 claims description 46
- 229910052715 tantalum Inorganic materials 0.000 claims description 29
- 230000007797 corrosion Effects 0.000 claims description 6
- 238000005260 corrosion Methods 0.000 claims description 6
- 230000000737 periodic effect Effects 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 4
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 4
- 229910052744 lithium Inorganic materials 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052700 potassium Inorganic materials 0.000 claims description 4
- 239000011591 potassium Substances 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 2
- 239000000654 additive Substances 0.000 claims 1
- 230000000996 additive effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 46
- 238000009826 distribution Methods 0.000 abstract description 41
- 230000008569 process Effects 0.000 description 19
- 238000002791 soaking Methods 0.000 description 14
- 238000002425 crystallisation Methods 0.000 description 11
- 230000008025 crystallization Effects 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 239000002826 coolant Substances 0.000 description 7
- 238000010899 nucleation Methods 0.000 description 7
- 230000020169 heat generation Effects 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 238000007711 solidification Methods 0.000 description 4
- 230000008023 solidification Effects 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000006903 response to temperature Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- POIUWJQBRNEFGX-XAMSXPGMSA-N cathelicidin Chemical compound C([C@@H](C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CO)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H]([C@@H](C)CC)C(=O)NCC(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](C(C)C)C(=O)N[C@@H](CCC(N)=O)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CC(O)=O)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H](CC(N)=O)C(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](C(C)C)C(=O)N1[C@@H](CCC1)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H]([C@@H](C)O)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CO)C(O)=O)NC(=O)[C@H](CC=1C=CC=CC=1)NC(=O)[C@H](CC(O)=O)NC(=O)CNC(=O)[C@H](CC(C)C)NC(=O)[C@@H](N)CC(C)C)C1=CC=CC=C1 POIUWJQBRNEFGX-XAMSXPGMSA-N 0.000 description 1
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- 230000014759 maintenance of location Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/30—Niobates; Vanadates; Tantalates
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/32—Titanates; Germanates; Molybdates; Tungstates
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- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details
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Abstract
【解決手段】炉内に保持されたるつぼ11内に種子結晶14を配置し、るつぼ11内に充填された原料溶液を加熱溶解し、るつぼ11の下方より上方に向かって、原料を除冷することにより結晶成長させる結晶製造装置において、前記種子結晶14が配置される前記るつぼ11の外側に取り付けられた中空構造のキャップ17と、前記中空構造を流れる冷媒の流量調整を行う手段とを含む温度制御手段を備える。前記キャップ17の代わりに螺旋型のパイプを用いてもよい。前記温度制御手段は、前記種子結晶14の近傍を局所的に冷却して温度制御するだけでなく、前記キャップ17にヒータを内包させて、冷却と加熱の両方で温度制御することも可能である。
【選択図】図2A
Description
(要件1)マイクロヒータの加熱領域の長さは、種子結晶の長さより短い。
(要件2)好ましくは、マイクロヒータは、種子結晶の上端に近いところに配置して、成長界面での温度勾配の制御を可能とする。
(要件3)マイクロヒータの体積を小さくし、熱容量を小さくして、温度制御に対する速い応答が得られるようにする。
(方式A)図3Bに示したように、Pt製のパイプ27を上下に二分割し、上部パイプ27aに電圧を印可する機構を具備する。すなわち、上部パイプ27aは、抵抗加熱式Ptヒータとして機能する。
(方式B)内径が種子結晶に近接し、パイプ27と同様にコイル状に巻いた抵抗加熱式SiCヒータ31を具備する(図10A参照)。
(方式C)内径が種子結晶に近接し、高周波を効率よく印可できる断面形状を有したPt製の抵抗加熱板32と、高周波発生コイル33a,33bとを含む高周波加熱式Ptヒータを具備する(図10B参照)。
2,12,22 原料、原料溶液
3,13,23 結晶、成長結晶
4,14,24 種子結晶
5,15,25,35 炉内温度分布
6,16,26 発熱体
17 冷却キャップ
18 マイクロヒータ
27 冷却パイプ
29 るつぼ台
31 SiCヒータ
32 抵抗加熱板
33 高周波発生コイル
Claims (11)
- 炉内に保持されたるつぼ内に種子結晶を配置し、前記るつぼ内に充填された原料を加熱液化し、前記るつぼの下方より上方に向かって、前記原料を徐冷することにより結晶を成長させる結晶製造装置において、
前記種子結晶が配置される前記るつぼの外側に取り付けられた中空構造のキャップと、前記中空構造を流れる冷媒の流量調整を行う手段とを含む温度制御手段を備え、
前記キャップは、前記冷媒が流れる経路方向に沿って断面積が異なり、前記温度制御手段は、前記種子結晶の近傍を局所的に冷却して温度制御する、または冷却と加熱の両方で温度制御することを特徴とする結晶製造装置。 - 前記キャップは、複数のキャップに分割され、
前記温度制御手段は、前記複数のキャップの各々の中空部に流れる冷媒の流量調整を独立に行う手段を含むことを特徴とする請求項1に記載の結晶製造装置。 - 前記温度制御手段は、前記キャップにヒータを内包し、前記冷媒の流量調整とともにヒータヘの通電制御を行う手段を含むことを特徴とする請求項1または2に記載の結晶製造装置。
- 前記キャップの材質は、PtおよびPtと同等の導電性、耐熱、耐腐食性を有する金属および導電性、耐熱、耐腐食性を有する酸化物のいずれかであることを特徴とする請求項1、2または3に記載の結晶製造装置。
- 炉内に保持されたるつぼ内に種子結晶を配置し、前記るつぼ内に充填された原料を加熱液化し、前記るつぼの下方より上方に向かって、前記原料を徐冷することにより結晶を成長させる結晶製造装置において、
前記種子結晶が配置される前記るつぼの外側に取り付けられた螺旋型のパイプと、該パイプに流れる冷媒の流量調整を行う手段とを含む温度制御手段を備え、
前記パイプは、前記冷媒が流れる経路方向に沿って断面積が異なり、前記温度制御手段は、前記種子結晶の近傍を局所的に冷却して温度制御する、または冷却と加熱の両方で温度制御することを特徴とする結晶製造装置。 - 前記温度制御手段は、前記パイプに流れる冷媒を、前記種子結晶の下部から導入して上部へ排出し、前記冷媒の流量調整を行うことを特徴とする請求項5に記載の結晶製造装置。
- 前記パイプは、複数のパイプに分割され、
前記温度制御手段は、前記複数のパイプの各々に流れる冷媒の流量調整を独立に行う手段を含むことを特徴とする請求項5または6に記載の結晶製造装置。 - 前記温度制御手段は、前記パイプにヒータを内包し、前記冷媒の流量調整とともにヒータヘの通電制御を行う手段を含むことを特徴とする請求項5、6または7に記載の結晶製造装置。
- 前記パイプの材質は、PtおよびPtと同等の導電性、耐熱、耐腐食性を有する金属および導電性、耐熱、耐腐食性を有する酸化物のいずれかであることを特徴とする請求項5ないし8のいずれかに記載の結晶製造装置。
- 前記結晶の主成分は、周期率表Ia族とVb族の酸化物または炭酸塩から構成されており、Ia族はリチウム、カリウム、Vb族はニオブ、タンタルの少なくともいずれかを含むことを特徴とする請求項1ないし9のいずれかに記載の結晶製造装置。
- 前記結晶の主成分は、周期率表Ia族とVb族の酸化物または炭酸塩から構成されており、Ia族はリチウム、カリウム、Vb族はニオブ、タンタルの少なくともいずれかを含み、添加不純物として周期律表IIa族の酸化物または炭酸塩の少なくとも1種類を含むことを特徴とする請求項1ないし9のいずれかに記載の結晶製造装置。
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EP (1) | EP1813700B1 (ja) |
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KR (1) | KR100850786B1 (ja) |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009221100A (ja) * | 2004-11-16 | 2009-10-01 | Nippon Telegr & Teleph Corp <Ntt> | 結晶製造装置 |
JP2014094854A (ja) * | 2012-11-08 | 2014-05-22 | Tohoku Univ | 単結晶の製造方法 |
JP2014214078A (ja) * | 2013-04-30 | 2014-11-17 | 日本電信電話株式会社 | 結晶成長方法 |
JP2018080097A (ja) * | 2016-11-18 | 2018-05-24 | 住友金属鉱山株式会社 | 単結晶製造装置及び単結晶製造方法 |
JP2018080098A (ja) * | 2016-11-18 | 2018-05-24 | 住友金属鉱山株式会社 | 単結晶製造装置及び単結晶製造方法 |
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KR102138121B1 (ko) * | 2013-11-07 | 2020-07-27 | 에스케이실트론 주식회사 | 실리콘 단결정 잉곳 제조 장치 및 제조 방법 |
JP2018048043A (ja) * | 2016-09-21 | 2018-03-29 | 国立大学法人信州大学 | タンタル酸リチウム結晶の製造装置およびタンタル酸リチウム結晶の製造方法 |
US10991617B2 (en) * | 2018-05-15 | 2021-04-27 | Applied Materials, Inc. | Methods and apparatus for cleaving of semiconductor substrates |
CN108893776A (zh) * | 2018-07-24 | 2018-11-27 | 南京同溧晶体材料研究院有限公司 | 温度梯度法生长稀土倍半氧化物晶体的热场装置及生长稀土倍半氧化物晶体的温度梯度方法 |
CN112204175B (zh) * | 2018-08-07 | 2024-03-26 | 住友电气工业株式会社 | 磷化铟单晶和磷化铟单晶衬底 |
CN115216831A (zh) * | 2022-07-15 | 2022-10-21 | 中国电子科技集团公司第十三研究所 | 一种可控温度梯度的晶体生长装置及方法 |
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JP2009221100A (ja) | 2009-10-01 |
EP1813700B1 (en) | 2011-04-20 |
JP4351249B2 (ja) | 2009-10-28 |
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CN1930328A (zh) | 2007-03-14 |
US8992683B2 (en) | 2015-03-31 |
JP5117441B2 (ja) | 2013-01-16 |
KR20070044389A (ko) | 2007-04-27 |
EP1813700A4 (en) | 2009-04-22 |
JPWO2006054610A1 (ja) | 2008-05-29 |
KR100850786B1 (ko) | 2008-08-06 |
CN100510199C (zh) | 2009-07-08 |
DE602005027597D1 (de) | 2011-06-01 |
US20070209579A1 (en) | 2007-09-13 |
EP1813700A1 (en) | 2007-08-01 |
WO2006054610A1 (ja) | 2006-05-26 |
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