JP2009177200A - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

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Publication number
JP2009177200A
JP2009177200A JP2009083754A JP2009083754A JP2009177200A JP 2009177200 A JP2009177200 A JP 2009177200A JP 2009083754 A JP2009083754 A JP 2009083754A JP 2009083754 A JP2009083754 A JP 2009083754A JP 2009177200 A JP2009177200 A JP 2009177200A
Authority
JP
Japan
Prior art keywords
power supply
wiring
layer
supply voltage
word
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2009083754A
Other languages
English (en)
Japanese (ja)
Inventor
Minoru Ishida
実 石田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2009083754A priority Critical patent/JP2009177200A/ja
Publication of JP2009177200A publication Critical patent/JP2009177200A/ja
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/4813—Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2009083754A 1998-05-01 2009-03-30 半導体記憶装置 Withdrawn JP2009177200A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009083754A JP2009177200A (ja) 1998-05-01 2009-03-30 半導体記憶装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP12254298 1998-05-01
JP2009083754A JP2009177200A (ja) 1998-05-01 2009-03-30 半導体記憶装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP17118698A Division JP4501164B2 (ja) 1998-05-01 1998-06-18 半導体記憶装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2012102233A Division JP5035764B2 (ja) 1998-05-01 2012-04-27 半導体記憶装置
JP2012149324A Division JP5131407B2 (ja) 1998-05-01 2012-07-03 半導体記憶装置

Publications (1)

Publication Number Publication Date
JP2009177200A true JP2009177200A (ja) 2009-08-06

Family

ID=41031892

Family Applications (8)

Application Number Title Priority Date Filing Date
JP2009083754A Withdrawn JP2009177200A (ja) 1998-05-01 2009-03-30 半導体記憶装置
JP2012102233A Expired - Lifetime JP5035764B2 (ja) 1998-05-01 2012-04-27 半導体記憶装置
JP2012149324A Expired - Lifetime JP5131407B2 (ja) 1998-05-01 2012-07-03 半導体記憶装置
JP2012202822A Withdrawn JP2013016846A (ja) 1998-05-01 2012-09-14 半導体記憶装置
JP2014069932A Expired - Lifetime JP5674249B2 (ja) 1998-05-01 2014-03-28 半導体記憶装置
JP2014177297A Withdrawn JP2014222787A (ja) 1998-05-01 2014-09-01 半導体記憶装置
JP2014177296A Expired - Lifetime JP5674251B2 (ja) 1998-05-01 2014-09-01 半導体記憶装置
JP2015188669A Withdrawn JP2016021590A (ja) 1998-05-01 2015-09-25 半導体記憶装置

Family Applications After (7)

Application Number Title Priority Date Filing Date
JP2012102233A Expired - Lifetime JP5035764B2 (ja) 1998-05-01 2012-04-27 半導体記憶装置
JP2012149324A Expired - Lifetime JP5131407B2 (ja) 1998-05-01 2012-07-03 半導体記憶装置
JP2012202822A Withdrawn JP2013016846A (ja) 1998-05-01 2012-09-14 半導体記憶装置
JP2014069932A Expired - Lifetime JP5674249B2 (ja) 1998-05-01 2014-03-28 半導体記憶装置
JP2014177297A Withdrawn JP2014222787A (ja) 1998-05-01 2014-09-01 半導体記憶装置
JP2014177296A Expired - Lifetime JP5674251B2 (ja) 1998-05-01 2014-09-01 半導体記憶装置
JP2015188669A Withdrawn JP2016021590A (ja) 1998-05-01 2015-09-25 半導体記憶装置

Country Status (1)

Country Link
JP (8) JP2009177200A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114514604A (zh) * 2019-10-11 2022-05-17 株式会社索思未来 半导体装置
CN114514603A (zh) * 2019-10-11 2022-05-17 株式会社索思未来 半导体装置
CN114586144A (zh) * 2019-10-25 2022-06-03 株式会社索思未来 半导体装置
CN114762113A (zh) * 2019-12-05 2022-07-15 株式会社索思未来 半导体装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7369471B2 (ja) * 2019-07-11 2023-10-26 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 柱状半導体装置と、その製造方法

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US5055716A (en) * 1990-05-15 1991-10-08 Siarc Basic cell for bicmos gate array
JPH04145656A (ja) * 1990-10-08 1992-05-19 Nec Corp 半導体記憶装置及びその製造方法
JPH05136373A (ja) * 1990-11-21 1993-06-01 Ricoh Co Ltd 半導体集積回路装置及びその製造方法
US5287304A (en) * 1990-12-31 1994-02-15 Texas Instruments Incorporated Memory cell circuit and array
JPH04257258A (ja) * 1991-02-08 1992-09-11 Nec Corp Ｍｏｓ型スタティックメモリ
US5166902A (en) * 1991-03-18 1992-11-24 United Technologies Corporation SRAM memory cell
GB2254487B (en) * 1991-03-23 1995-06-21 Sony Corp Full CMOS type static random access memories
JPH05136372A (ja) * 1991-11-12 1993-06-01 Sony Corp スタテイツクｒａｍのメモリセルおよびそのメモリセルアレイ
EP0562207B1 (en) * 1992-03-27 1996-06-05 International Business Machines Corporation Method of forming thin film pseudo-planar PFET devices and structures resulting therefrom
JPH05299621A (ja) * 1992-04-20 1993-11-12 Mitsubishi Electric Corp 半導体メモリ装置およびゲートアレイ装置
JPH06104420A (ja) * 1992-09-22 1994-04-15 Toshiba Corp 半導体装置およびその製造方法
JP2705874B2 (ja) * 1992-12-18 1998-01-28 川崎製鉄株式会社 半導体集積回路
JP3237346B2 (ja) * 1993-10-29 2001-12-10 ソニー株式会社 半導体記憶装置
JPH07130877A (ja) * 1993-11-05 1995-05-19 Sony Corp 完全ｃｍｏｓ型スタティック記憶セル
JPH07161839A (ja) * 1993-12-06 1995-06-23 Sony Corp 完全ｃｍｏｓ型ｓｒａｍ装置
JP3294041B2 (ja) * 1994-02-21 2002-06-17 株式会社東芝 半導体装置
JP3426711B2 (ja) * 1994-07-05 2003-07-14 株式会社日立製作所 半導体集積回路装置およびその製造方法
JPH08288407A (ja) * 1995-04-12 1996-11-01 Sony Corp 半導体メモリ装置およびその製造方法
JPH09172078A (ja) * 1995-12-20 1997-06-30 Fujitsu Ltd 半導体装置の配線構造及びその形成方法
US5719079A (en) * 1996-05-28 1998-02-17 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making a semiconductor device having high density 4T SRAM in logic with salicide process
JPH1056078A (ja) * 1996-08-08 1998-02-24 Fujitsu Ltd 半導体装置
JPH1093024A (ja) * 1996-09-11 1998-04-10 Hitachi Ltd 半導体集積回路装置
JPH10163344A (ja) * 1996-12-05 1998-06-19 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP3523762B2 (ja) * 1996-12-19 2004-04-26 株式会社東芝 半導体記憶装置
JPH10326896A (ja) * 1997-03-25 1998-12-08 Toshiba Corp 半導体装置及びその製造方法
US6005296A (en) * 1997-05-30 1999-12-21 Stmicroelectronics, Inc. Layout for SRAM structure
JP3363750B2 (ja) * 1997-08-15 2003-01-08 株式会社日立製作所 半導体集積回路装置の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114514604A (zh) * 2019-10-11 2022-05-17 株式会社索思未来 半导体装置
CN114514603A (zh) * 2019-10-11 2022-05-17 株式会社索思未来 半导体装置
CN114586144A (zh) * 2019-10-25 2022-06-03 株式会社索思未来 半导体装置
CN114762113A (zh) * 2019-12-05 2022-07-15 株式会社索思未来 半导体装置

Also Published As

Publication number Publication date
JP2014241441A (ja) 2014-12-25
JP2012186510A (ja) 2012-09-27
JP2012178590A (ja) 2012-09-13
JP5674249B2 (ja) 2015-02-25
JP5674251B2 (ja) 2015-02-25
JP2013016846A (ja) 2013-01-24
JP2016021590A (ja) 2016-02-04
JP5131407B2 (ja) 2013-01-30
JP2014123782A (ja) 2014-07-03
JP2014222787A (ja) 2014-11-27
JP5035764B2 (ja) 2012-09-26

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Legal Events

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RD03 Notification of appointment of power of attorney

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Effective date: 20120420

A761 Written withdrawal of application

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Effective date: 20120705