JP2009155723A - 化学気相蒸着装置 - Google Patents
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- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 54
- 239000007789 gas Substances 0.000 claims abstract description 166
- 238000006243 chemical reaction Methods 0.000 claims abstract description 150
- 239000012495 reaction gas Substances 0.000 claims abstract description 56
- 238000005192 partition Methods 0.000 claims description 56
- 230000002265 prevention Effects 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 11
- 230000007423 decrease Effects 0.000 claims description 7
- 238000000638 solvent extraction Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 8
- 238000000151 deposition Methods 0.000 abstract description 5
- 230000008021 deposition Effects 0.000 abstract description 5
- 238000007740 vapor deposition Methods 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 20
- 239000000758 substrate Substances 0.000 description 11
- 239000002912 waste gas Substances 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000010574 gas phase reaction Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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Abstract
【解決手段】本発明による化学気相蒸着装置は、ウェーハが搭載されるサセプタが備えられ上記ウェーハに対する化学気相蒸着が行われる反応炉を備える反応チャンバーと、上記反応炉の外側から上記反応炉の中心側に反応ガスが流動するように上記反応チャンバーの外部壁に備えられるガス流入部と、そして上記反応炉で反応が完了した反応ガスを上記反応チャンバーの上部または下部に排出するように上記反応チャンバーの中心部に備えられるガス排気部を含み、高温の蒸着膜の成長条件下で成長圧力を増加させる場合にもチャンバー内でガスの密度が実質的に均一になるようにすることができるという特徴がある。
【選択図】図1
Description
11 第1ガス室
12 第2ガス室
13 第3ガス室
14 サセプタ
15 ポケット
18 外部壁
20 回転駆動部
21、21a 被動ギア
22、22a 駆動ギア
24、24a 回転モーター
30 加熱部
40 ガス流入部
50 ガス排気部
51、51a 排気孔
60 流動制御部
61 隔壁部材
62 傾斜隔壁
63a、63b、63c 分割隔壁
67 案内部材
68 循環ライン
Claims (16)
- ウェーハが搭載されるサセプタが備えられ前記ウェーハに対する化学気相蒸着が行われる反応炉を備える反応チャンバーと、
前記反応炉の外側から前記反応炉の中心側に反応ガスが流動するように前記反応チャンバーの外部壁に備えられるガス流入部と、
前記反応炉で反応が完了した反応ガスを前記反応チャンバーの上部または下部に排出するように前記反応チャンバーの中心部に備えられるガス排気部を含む化学気相蒸着装置。 - 前記ガス流入部から前記ガス排気部に向くガスの流動が実質的に均一になるように前記ガス流入部と前記ガス排気部の間に備えられる流動制御部をさらに含むことを特徴とする請求項1に記載の化学気相蒸着装置。
- 前記サセプタを一方向に回転させる動力を提供する回転駆動部をさらに含むことを特徴とする請求項2に記載の化学気相蒸着装置。
- 前記サセプタと隣接するように備えられ前記サセプタに熱を供給する加熱部をさらに含むことを特徴とする請求項2に記載の化学気相蒸着装置。
- 前記流動制御部は、
前記反応炉の外側に備えられ前記反応チャンバー内部で前記反応炉を区画させ、前記ガス流入部を通じて流入される反応ガスの圧力を調節し前記反応炉に流入されるようにする隔壁部材と、
前記反応チャンバーの外側壁と前記隔壁部材の間に設けられ前記ガス流入部を通じて流入される反応ガスを貯蔵し前記隔壁部材を通じて流入させる少なくとも1つのガス室を含むことを特徴とする請求項2から請求項4の何れかに記載の化学気相蒸着装置。 - 前記ガス室が複数備えられる場合、
前記各ガス室を区画する少なくとも1つの分割部材をさらに含むことを特徴とする請求項5に記載の化学気相蒸着装置。 - 前記反応チャンバー内で前記サセプタと対向する面に備えられ前記サセプタと前記反応チャンバーの間の間隔が前記ガス流入部側に向くほど次第に減少するようにする過流防止部をさらに含むことを特徴とする請求項1から請求項6の何れかに記載の化学気相蒸着装置。
- 前記流動制御部は、
前記反応炉の外側に備えられ前記反応チャンバー内部で前記反応炉を区画させ、前記ガス流入部を通じて流入される反応ガスの圧力を調節し前記反応炉に流入されるようにし、所定の角度傾くように備えられる傾斜隔壁と、
前記反応チャンバーの外側壁と前記傾斜隔壁の間に設けられ前記ガス流入部を通じて流入される反応ガスを貯蔵し前記傾斜隔壁を通じて流入させる複数のガス室と、
前記各ガス室を区画する少なくとも1つの分割部材を含むことを特徴とする請求項2から請求項4の何れかに記載の化学気相蒸着装置。 - 前記反応チャンバー内で前記サセプタと対向する面に備えられ前記サセプタと前記反応チャンバーの間の間隔が前記ガス流入部側に向くほど次第に減少するようにする過流防止部をさらに含むことを特徴とする請求項8に記載の化学気相蒸着装置。
- 前記流動制御部は、
前記反応チャンバーの外側壁と分割隔壁の間に設けられ前記ガス流入部を通じて流入される反応ガスを貯蔵し前記分割隔壁を通じて流入させる複数のガス室と、
前記各ガス室が異なる長さで形成され互いが段差をなすように区画させる少なくとも1つの分割部材と、
前記各ガス室の端部に備えられ前記ガス流入部を通じて流入される反応ガスの圧力を調節し前記反応炉に流入されるようにする分割隔壁を含むことを特徴とする請求項2から請求項4の何れかに記載の化学気相蒸着装置。 - 前記反応チャンバー内で前記サセプタと対向する面に備えられ前記サセプタと前記反応チャンバーの間の間隔が前記ガス流入部側に向くほど次第に減少するようにする過流防止部をさらに含むことを特徴とする請求項10に記載の化学気相蒸着装置。
- 前記各分割隔壁に実質的に水平方向に並列に備えられ反応ガスの流れを案内する複数の案内部材をさらに含むことを特徴とする請求項10に記載の化学気相蒸着装置。
- 前記ガス流入部は、
異なる種類の反応ガスが夫々のガス室に流入されるように前記各ガス室と連通するガス供給ラインを複数備えることを特徴とする請求項6に記載の化学気相蒸着装置。 - 前記回転駆動部は、
前記サセプタの外部面に形成された被動ギアと、
前記被動ギアとギアがかみ合わされる駆動ギアと、
前記駆動ギアを回転させる駆動軸の先端に備えられ駆動力を提供する回転モーターを含むことを特徴とする請求項3に記載の化学気相蒸着装置。 - 前記サセプタの中心部に備えられ前記サセプタを回転させ、その内部に前記ガス排気部が設けられるシャフトをさらに含み、
前記回転駆動部は前記シャフトに備えられる被動ギアと、前記被動ギアとギアがかみ合わされる駆動ギアと、前記駆動ギアを回転させる駆動軸の先端に備えられる回転モーターを含むことを特徴とする請求項3に記載の化学気相蒸着装置。 - 前記ガス排気部は、
前記反応チャンバーの内面の上端部及び前記サセプタの中心部のうちいずれか1つに設けられる排気孔と、
前記排気孔と連通する排気ラインを含むことを特徴とする請求項2に記載の化学気相蒸着装置。
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Application Number | Priority Date | Filing Date | Title |
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KR10-2007-0137715 | 2007-12-26 | ||
KR20070137715 | 2007-12-26 | ||
KR1020080096306A KR101161407B1 (ko) | 2007-12-26 | 2008-09-30 | 화학기상 증착장치 |
KR10-2008-0096306 | 2008-09-30 |
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JP2009155723A true JP2009155723A (ja) | 2009-07-16 |
JP5005656B2 JP5005656B2 (ja) | 2012-08-22 |
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US (1) | US8298338B2 (ja) |
JP (1) | JP5005656B2 (ja) |
CN (1) | CN101469411B (ja) |
DE (1) | DE102008057909B4 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012153591A1 (ja) * | 2011-05-10 | 2012-11-15 | 東京エレクトロン株式会社 | 成膜装置 |
JP2015079967A (ja) * | 2010-03-19 | 2015-04-23 | 東京エレクトロン株式会社 | 成膜装置、成膜方法、回転数の最適化方法及び記憶媒体 |
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Also Published As
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CN101469411A (zh) | 2009-07-01 |
US8298338B2 (en) | 2012-10-30 |
DE102008057909A1 (de) | 2009-07-02 |
US20090165713A1 (en) | 2009-07-02 |
DE102008057909B4 (de) | 2021-08-19 |
JP5005656B2 (ja) | 2012-08-22 |
CN101469411B (zh) | 2012-07-18 |
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