TWI313479B - Semiconductor device manufacturing apparatus having rotatable gas injector and thin film deposition method using the same - Google Patents

Description

1313479

FIELD OF THE INVENTION The present invention relates generally to semiconductor device fabrication semi-body device fabrication equipment, and has a semi-conformal manufacturing device with a spinable gas injector for south uniformity of film deposition. And the same film deposition method as described above is used. Description of the prior art: As the crystal size increases, it is more and more difficult to deposit a film of uniform thickness. When several wafers are placed in a single reaction chamber to deposit a layer on the wafer.

In the case of a film, it is very difficult to have all of the above wafers having the same thickness of the film. This is because the gas source in the reaction chamber is not uniformly distributed. Although the above deposition method places a plurality of wafers in a single reaction chamber. While the above film can be deposited on the above wafer at the same time to increase productivity, this test is shelved for the above reasons.

1 is a schematic view showing a semiconductor device manufacturing apparatus similar to the above-described prior art, and referring to FIG. 1 'protecting a reaction space in a reaction chamber to avoid external interference, including a lower reaction chamber 丨丨〇a and The upper reaction chamber Πb, the gas source forming the film is provided by a gas supply input pipe 140 flowing horizontally at a side portion of the reaction chamber 10, and is provided on the wafer 130 of the reaction chamber 100, and the gas source is located The gas discharge pipe 140 of the side portion of the reaction chamber 1 is discharged. When a chemical vapor deposition (CVD) semiconductor process is performed using the previously described semiconductor device manufacturing apparatus, the gas source flows horizontally and passes through the above crystal

5151-4967-PF(N); Ahddub.ptd Page 5 1313479 V. Description of the invention (2) From the circle 13 to the end, the gas absorption amount and the gas output of the wafer 130 at the gas input port The thickness of the surface of the wafer 13 is different, so that the film deposition thickness on the wafer 130 is not more than two, which is more obvious as the wafer size increases. Therefore, since the film deposition is performed by the horizontal flow of the gas source, the adsorption rate of the gas source to the wafer 130 is lowered, so that the deposition rate of the film is also lowered. For mass production, a plurality of crystals are placed in the reaction chamber 1〇〇, and the thin films are unevenly deposited on the plurality of wafers as if they were round. Furthermore, in order to place a plurality of wafers in the above reaction chamber 1 , it is necessary to increase the volume of the above reaction chamber 100, so that the problem of uniformity will be more apparent. 1 SUMMARY OF THE INVENTION: Accordingly, in order to provide a high-inventive device for deposition, the present invention comprises: a body-mounted crystal seat mounted on another unit of high uniformity of the uniformity of the semiconductor package of the present invention. The above-mentioned object is a reaction chamber branch mold, which is designed to solve the above problems, and the object manufacturing apparatus of the present invention has a swirlable gas injector and film deposition. It is to provide a method of manufacturing a film using the above semiconductor device to accomplish the above object. Another advantage is that a semiconductor device manufacturing device has a gas discharge outlet for discharging the internal gas level to be disposed in the reaction chamber; at least one crystal support mold for placing the wafer; a cylinder block for hanging the outer wall, the cylinder block having a plurality of Annular groove page 6 5151-4967-PF (N); Ahddub.ptd 1313479 V. Description of the invention (3) The groove is located in the reaction hole of the above-mentioned reaction body, so that it can penetrate the reaction chamber of the cylinder body, and has multiple gas, The gas is supplied to the horizontal hole of the propeller type gas injection body supply pipe, and the above-mentioned propeller is horizontally rotated. Here, the above-mentioned crystal holder is under the above. The above-described injection hole is propeller type gas injection, preferably, the upper tube, and mounted, in addition, the above-mentioned movement up and down. The propeller is connected to the RF power supply source and is in close contact with the gas row. According to the method of the present invention, the side and the side wall of the plurality of gas permeating cylinder blocks are connected through each of the above annular grooves; Rotating shaft, tightly receiving 'rotationally inserting the above-mentioned cylinder block, vertically inserted into the above body, and connecting one end of the tube parallel to the longitudinal direction of the rotating shaft to the annular groove; and a screwing, inserting in the above rotating shaft Connecting the gas discharge f branch pipe at the end, the branch pipe respectively has a multi-injection gas injector, and the gas discharge outlet through the rotary shaft of the rotary shaft is preferably located in the reaction chamber to be located in the direction of the lower side of the branch pipe and The direction between the above screws. The apparatus further includes a heating means for cooling the above-mentioned crystal holder supporting mold on the wall of the cylinder block. The crystal holder supporting mold is preferably mounted to be horizontally rotatable and the gas injector is made of metal and mounted for connection, the rotating shaft and the cylinder block are transmitted through an electromagnetic density, and the crystal holder supporting mold has at least one tube. Through hole, the outlet is not in the above crystal seat. Another aspect of the present invention provides a film sink by using the above device, comprising the steps of: mounting a wafer on the crystal holder; and rotating the gas when the gas injection hole injects the gas

1313479

V. INSTRUCTIONS (4) Axis 0 DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT: EMBODIMENT(S) The preferred embodiment of the present invention is described by the accompanying drawings. The gas diagram of the gas of ί according to the preferred embodiment of the present invention is described. Referring to Fig. 3, the reaction chamber 304 has a function for displacing the outlet 300' as shown in Fig. 4, and the four crystal holders are cut into three pieces. 3曰曰上Λ模模301, and four wafers 305 are respectively mounted on the above-mentioned crystal holder, and the above-mentioned crystal holder supporting die 301 has at least one through hole connecting the gas exhausting outlet 3 at a position without the above-mentioned crystal holder 303. Hey.可 A rotatable gas injector is placed on the reaction chamber 3〇4, including a cylinder block 305-2, a rotating shaft 305-1, and a propeller injector (308 of Fig. 7). In the manufacturing process of the semiconductor device, the above-mentioned propeller type injector (3 〇 8 in FIG. 7) injects a gas source into the reaction space during rotation, or the above-mentioned propeller type injector 3 〇8 can increase a horizontal rotation function. Replaced by the above-mentioned crystal holder supporting die 3 〇1. Further, in order to control the distance between the above-described propeller injector 3〇8 and the above-mentioned crystal holder 03 which are changed according to the process required for use, the above-described crystal holder supporting mold 3〇 and the above-mentioned rotating shaft 305-1 are provided. In order to move up and down. Undescribed reference numeral 3 〇 2 is a heater arranged in a concentric manner to heat the wafer 31 4 described above. Fig. 5 and Fig. 6 are diagrams showing the steam rainbow body 305-2 and the above-mentioned rotating shaft 305-1 in Fig. 3 in more detail.

5151-4967-PF(N); Ahddub.ptd Page 8 1313479 V. Description of Invention (5) Referring to Figures 5 and 6 together with Figure 1, the cylinder block 305-2 is flanged to the reaction chamber 3 0 4 outer side upper wall, a screw hole 3 〇5 - 7 is used to connect the reaction chamber 3054 and the above-mentioned cylinder block 305-2 by screws, and an O-ring tube 305-6 is mounted on the cylinder block 305-2 The -ring mounting portion prevents the occurrence of air leakage in the portion where the cylinder block 305-2 and the reaction chamber 304 are in close contact with each other. Four annular grooves are formed along the circumference of the inner wall of the cylinder block 305-2, four gas injection holes 305-3 are formed in the side wall of the cylinder block 305-2, and the four gas injection holes 305-3 pass through the above The side walls of the cylinder block 305-2 are connected to the four annular grooves 305-4, respectively. Fig. 6 schematically illustrates an annular groove 30 5-4 and the above-described gas injection hole 305-3 connected to the above-described one annular groove 305-4. Since the rotating shaft 305-1 is inserted into the inner wall of the cylinder block 305-2, the rotating shaft 305-1 is erected and inserted into the reaction chamber 3〇4 inward. The position controller 3 16 is disposed at the centripetal insertion portion to control the length of the inward insertion of the rotating shaft 305-1, and the four gas input tubes 3〇5_9 are along the rotating shaft in the rotating shaft 305-1. The longitudinal direction of 305-1 is formed, and the rotating shaft 305-1 is mounted so as to be in close contact with the cylinder block 305-2 and rotated, so that the scroll shaft 305-1 can be rotated in the inner wall of the cylinder block 305-2. A bearing 305-8 is mounted therein. The rotating shaft 305-1 and the cylinder block 305-2 are in close contact with each other by a magnetic sealing pad 305-2, in order to eliminate the heat generated by the rotating friction of the rotating shaft 305-1. A water cooling pipe (not shown) is installed in the wall of the body 3〇5_2. The gas injection hole 305-3, the annular groove 3〇5_4 and the above

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1313479 V. INSTRUCTIONS (6) The gas supply pipes 3 0 5 - 9 have the same designation number, so they correspond to each other one by one. If the gas source is respectively input through the gas injection hole 3 〇5 _ 3, the gas source is injected into the reaction chamber 3 through the annular groove 305-4 and the gas supply pipe 3〇5_9 through the propeller gas injector in sequence. 〇5, even if the rotating shaft 305-1 is rotated, the gas is not supplied smoothly due to the rotation of the rotating shaft 3 0 5 -1 because the four gas supply pipes 305-9 and the above four annular grooves are forever All of them are in a state of mutual communication. Figure 7 is a perspective view of the above-described propeller gas injector having four branch pipes 3〇8a, 3〇8b, 3〇8c, 308d' inserted in the above-mentioned rotating shaft 3〇5_ι The gas supply pipe 305-9 is connected to the end, and the branch pipes are horizontally branched. The branch pipes 308a' 308b, 308c, and 308d respectively have a plurality of injection holes 3?7, and the propeller gas injectors 3'8 are made of metal' and are electrically connected to a power supply source for performing a plasma process. The rotating motion of the rotating shaft 305-1 horizontally rotates the spiral gas injector 308, and the injection hole 307 may be on the bottom surface of the branch pipes 3〇ga, 3〇8b, 308c, 30 8d, but they are preferably directed toward one The direction between the bottom direction of the branch pipes 308a, 308b, 308c, 308d and the direction of rotation of the propeller injector 308 is because the above-mentioned vehicle direction can be considered under the rotation of the propeller gas injector 3 〇8. The gas source is evenly distributed in the above reaction space. The thin film deposition using the semiconductor sputtering manufacturing apparatus of FIG. 3 is accompanied by a crystal holder 303 on which the wafer 314 is mounted, and "When"

1313479 V. INSTRUCTION DESCRIPTION (7) ·-~ When the above four gas injection holes 3 〇 5 - 3 are injected into the upper reaction space, the rotating shaft 305-1 is rotated. The above gas sources supplied to the above four gas injection holes 305-3 may be different, and some of them may be the same. The gas source is supplied to the four gas injection holes 305-3' through the annular groove 3〇5_4 corresponding to the gas inlet hole 305-3' and the gas supply pipe 3〇5_9 is connected to the gas inlet The hole 305-3' and finally enters the reaction space through the injection hole 307 of the propeller gas injector 3〇5.

When all of the above gas injection holes 3 05-3 need to provide the same gas source 'there is no need to intentionally rotate the above-mentioned propeller type gas injectors 3 〇 8 , however 'When the above gas injection holes 305 _ 3 require different gas sources, the above gases are passed. When the source chemically reacts to deposit a film, it is necessary to rotate the propeller gas injector described above. For example, when it is desired to form a TiN film, the first and third branch pipes 308a and 308c, as shown in FIG. 7, 'inject the thermally decomposable TDEAT (Tetrakis Diethylamido Titanium, Ti[N(C2H5)2]4 )

When the propeller gas injector 30 8 rotates, the second and second first branch pipes 308b and 3〇8d inject ammonia gas, so that the TDEAT vapor and the ammonia gas are uniformly distributed in the reaction space. A uniform TiN film is formed. Naturally, a uniform TiN film which is uniformly distributed in the above reaction space by the above gas source is on the above four wafers 314. At the same time, the chemical reaction of the wafer 314 which is naturally heated will occur on the wafer 314. The through hole 3〇6 of the above-mentioned crystal holder supporting die 3〇1 is not necessarily necessary,

5151-4967-PF(N); Ahddub.ptd

1313479 V. Description of the Invention (8) The above-mentioned penetration hole 306 is absent, and the non-reactive gas escapes to the gas output outlet 30 0 through the groove between the above-mentioned crystal holder supporting mold 30 1 and the inner wall of the above reaction chamber 304. The embodiment of the present invention mainly describes an operation method in which the air injection pipe is rotated, and a similar effect can be obtained by stopping the operation of the propeller gas injector 308 and rotating the crystal holder supporting die 3〇1. In this example, RF energy is supplied to the propeller gas injector 3〇8 described above to excite the gas source to the plasma state. The semiconductor device manufacturing apparatus architecture described above can be applied to a general CVD process or even an atomic layer deposition (ALD) process, and different gas can be supplied through the branch pipes 30 8a, 308b, 308c, 308d of the gas injector 308. As described above, according to the semiconductor device manufacturing apparatus and the deposition method using the semiconductor device manufacturing apparatus, the gas is supplied from the upper side of the wafer 314 through the propeller gas injector 3〇8, and the non-reactive gas enters the above. The lower side space of the wafer 314 reduces the uniform thickness of the film by significantly reducing the horizontal flow of the gas source in the above conventional art, and therefore, although the multi-wafer is placed in a single reaction chamber, the high uniformity film It can be deposited on all wafers, which increases the yield. While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the invention may be modified and retouched without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application attached.

5151-4967-PF(N); Ahddub.ptd Page 12 1313479 BRIEF DESCRIPTION OF THE DRAWINGS The objects and other features of the present invention will be described in detail by means of the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 and FIG. 2 are schematic diagrams of a device mounting apparatus in accordance with a preferred embodiment of the present invention. 3 to 8 are schematic diagrams of the semiconductor device mounting apparatus of the schematic embodiment: I 0 0~reaction chamber, II 0 b~upper reaction chamber, 140~gas discharge tube, 301~seat support mold, 303~crystal seat, 305-1~ rotating shaft, 305-3~ gas injection hole, 305-5, 305-6~O-ring tube 305_8~ bearing '3 0 6~ penetration hole, 308~propeller type injector , 308b ~ branch tube, 308d ~ branch tube, 3 1 6 ~ position controller. 110a~ lower reaction chamber, 1 2 0, 1 3 0~ wafer, 150, 300~ gas exhaust outlet, 3 0 2~ heater, 304~ reaction chamber, 305-2~ cylinder block, 305 -4~ ring Grooved groove, , 3 0 5 - 7~ screw hole, 305-9~ gas input pipe, 3 0 7~ injection hole, 308a~ branch pipe, 308c~ branch pipe, 3 1 2, 3 1 4~ wafer,

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Claims (1)

1313479 Case No. 91114032 Sixth, the scope of application for patents 1. The half-reaction chamber crystal seat branch is at least multiplexed to the complex cylinder body shaft long annular groove connected to the above-mentioned multi-note rotary transport 2. Discharge out 3. Hole guide into the device 4. Vapor 5. The number of rings of the paddle type gas cylinder is several times of the rotation axis, the direction of the vertical direction groove; the propeller gas is supplied to the hole, and the water is applied as the application port. If the application is located on the upper side, for example, apply for the cylinder wall. The body injection conductor is provided with a struts, a seat, an ann, a vertical groove through the cylinder, and the above-mentioned screw-rotating patent of the parallel parallel-type gas-filled tube is in the above-mentioned patent paradigm. The patented cooling patent device is a manufacturing device comprising: a gas discharge outlet for discharging internal gas; horizontally disposed in the reaction chamber; mounted on the above-mentioned crystal holder supporting mold to place a wafer; and connecting the above reaction chamber An outer wall, the cylinder is formed along an inner wall thereof, and each of the annular grooves is formed with a gas injection hole formed by the side wall; contacting the inner wall of the cylinder, rotatingly inserted into the reaction chamber, having a plurality of gas supply pipes and the screwing, One end of the gas supply pipe is connected to the injector, and a horizontally radiating branch pipe is connected to the insertion end of the rotating shaft. The branch pipe has a propeller gas injector respectively, which is described in the first item of the rotating shaft. The apparatus, wherein the gas reaction chamber is arranged to be disposed under the crystal holder. The apparatus of claim 1, wherein the apparatus of the lower side of the injection tube and the apparatus of the propeller gas type of the first aspect further comprises a tube. The apparatus of item 1, wherein the spiral metal is made of the above, and is installed to connect an RF power supply 5151-4967-PFl(N).ptc Page 14 1313479 _ Case No. 91114032_年月日日_ί±ί-_ VI. Application for patent scope Source. 6. The apparatus of claim 1, wherein the above-described crystal holder supporting mold is mounted to rotate horizontally. 7. The apparatus of claim 1, wherein the above-described crystal holder supporting mold is mounted to be movable up and down. 8. The apparatus of claim 1, further comprising a heating device mounted on the above-mentioned crystal holder supporting mold. 9. The apparatus of claim 1, wherein the rotating shaft and the cylinder block are in intimate contact through an electromagnetic gasket. The apparatus of claim 1, wherein the above-mentioned crystal holder supporting mold has at least one tube through hole connecting the gas discharge outlet at the above-mentioned no crystal holder. A thin film deposition method using the apparatus according to claim 1, wherein the method comprises the steps of: mounting a wafer on the crystal holder, and rotating the rotating shaft when injecting gas through the multi-gas injection hole . 5151-4967-PFl(N).ptc Page 15