JP2009127981A - クリーンルーム、成膜方法、および半導体装置の作製方法 - Google Patents
クリーンルーム、成膜方法、および半導体装置の作製方法 Download PDFInfo
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- JP2009127981A JP2009127981A JP2007305964A JP2007305964A JP2009127981A JP 2009127981 A JP2009127981 A JP 2009127981A JP 2007305964 A JP2007305964 A JP 2007305964A JP 2007305964 A JP2007305964 A JP 2007305964A JP 2009127981 A JP2009127981 A JP 2009127981A
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JP2007305964A JP2009127981A (ja) | 2007-11-27 | 2007-11-27 | クリーンルーム、成膜方法、および半導体装置の作製方法 |
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012117972A1 (ja) * | 2011-03-03 | 2012-09-07 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法、並びに表示装置 |
JP2014060411A (ja) * | 2009-07-03 | 2014-04-03 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
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Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0173923U (enrdf_load_stackoverflow) * | 1987-11-04 | 1989-05-18 | ||
JPH04359731A (ja) * | 1991-06-07 | 1992-12-14 | Mitsubishi Electric Corp | 雰囲気作成装置 |
JPH05299314A (ja) * | 1992-04-24 | 1993-11-12 | Hitachi Ltd | 半導体装置の製造方法及びその装置 |
JPH08261535A (ja) * | 1995-03-23 | 1996-10-11 | Sony Corp | 排塵装置、半導体処理装置及び蒸着装置 |
JPH10238833A (ja) * | 1997-02-25 | 1998-09-08 | Mitsubishi Electric Corp | クリーンルーム |
JPH1163604A (ja) * | 1997-08-12 | 1999-03-05 | Tokyo Electron Ltd | 処理装置及び処理装置内の気体の制御方法 |
JP2000257909A (ja) * | 1999-03-09 | 2000-09-22 | Daikin Plant Kk | 空調設備 |
JP2002367896A (ja) * | 2001-06-11 | 2002-12-20 | Ebara Corp | 環境チャンバ及び基板処理装置並びに基板処理方法 |
JP2007088432A (ja) * | 2005-08-23 | 2007-04-05 | Semiconductor Energy Lab Co Ltd | トランジスタ、並びにそれを用いた表示装置、電子機器、及び半導体装置 |
JP2007150086A (ja) * | 2005-11-29 | 2007-06-14 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2007187668A (ja) * | 2007-01-15 | 2007-07-26 | Shimadzu Corp | 放射線アレイセンサーの製造方法 |
-
2007
- 2007-11-27 JP JP2007305964A patent/JP2009127981A/ja not_active Withdrawn
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0173923U (enrdf_load_stackoverflow) * | 1987-11-04 | 1989-05-18 | ||
JPH04359731A (ja) * | 1991-06-07 | 1992-12-14 | Mitsubishi Electric Corp | 雰囲気作成装置 |
JPH05299314A (ja) * | 1992-04-24 | 1993-11-12 | Hitachi Ltd | 半導体装置の製造方法及びその装置 |
JPH08261535A (ja) * | 1995-03-23 | 1996-10-11 | Sony Corp | 排塵装置、半導体処理装置及び蒸着装置 |
JPH10238833A (ja) * | 1997-02-25 | 1998-09-08 | Mitsubishi Electric Corp | クリーンルーム |
JPH1163604A (ja) * | 1997-08-12 | 1999-03-05 | Tokyo Electron Ltd | 処理装置及び処理装置内の気体の制御方法 |
JP2000257909A (ja) * | 1999-03-09 | 2000-09-22 | Daikin Plant Kk | 空調設備 |
JP2002367896A (ja) * | 2001-06-11 | 2002-12-20 | Ebara Corp | 環境チャンバ及び基板処理装置並びに基板処理方法 |
JP2007088432A (ja) * | 2005-08-23 | 2007-04-05 | Semiconductor Energy Lab Co Ltd | トランジスタ、並びにそれを用いた表示装置、電子機器、及び半導体装置 |
JP2007150086A (ja) * | 2005-11-29 | 2007-06-14 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2007187668A (ja) * | 2007-01-15 | 2007-07-26 | Shimadzu Corp | 放射線アレイセンサーの製造方法 |
Cited By (29)
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US11978741B2 (en) | 2009-07-03 | 2024-05-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device including transistor and manufacturing method thereof |
US9130046B2 (en) | 2009-07-03 | 2015-09-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device including transistor and manufacturing method thereof |
US11257847B2 (en) | 2009-07-03 | 2022-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Display device including transistor and manufacturing method thereof |
US12272698B2 (en) | 2009-07-03 | 2025-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising driver circuit |
US10714503B2 (en) | 2009-07-03 | 2020-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device including transistor and manufacturing method thereof |
US9812465B2 (en) | 2009-07-03 | 2017-11-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device including transistor and manufacturing method thereof |
US9837441B2 (en) | 2009-07-03 | 2017-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Display device including transistor and manufacturing method thereof |
US11637130B2 (en) | 2009-07-03 | 2023-04-25 | Semiconductor Energy Laboratory Co., Ltd. | Display device including transistor and manufacturing method thereof |
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KR101807822B1 (ko) | 2013-09-26 | 2017-12-11 | 무라다기카이가부시끼가이샤 | 퍼지 장치 및 퍼지 방법 |
TWI619192B (zh) * | 2013-09-26 | 2018-03-21 | Murata Machinery Ltd | 吹掃裝置及吹掃方法 |
WO2015045582A1 (ja) * | 2013-09-26 | 2015-04-02 | 村田機械株式会社 | パージ装置及びパージ方法 |
KR101906077B1 (ko) * | 2014-07-24 | 2018-11-30 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 시스템 및 기판 처리 장치 |
KR20170024008A (ko) * | 2014-07-24 | 2017-03-06 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 시스템 및 기판 처리 장치 |
JP2016025335A (ja) * | 2014-07-24 | 2016-02-08 | 東京エレクトロン株式会社 | 基板処理システムおよび基板処理装置 |
WO2016013440A1 (ja) * | 2014-07-24 | 2016-01-28 | 東京エレクトロン株式会社 | 基板処理システムおよび基板処理装置 |
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US11818856B2 (en) | 2014-10-28 | 2023-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Functional panel, method for manufacturing the same, module, data processing device |
WO2018003330A1 (ja) * | 2016-06-30 | 2018-01-04 | 東京エレクトロン株式会社 | 真空処理装置、真空処理方法及び記憶媒体 |
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