JP2009111426A - Iii族窒化物モノリシックパワーicの構造及びその製造方法 - Google Patents
Iii族窒化物モノリシックパワーicの構造及びその製造方法 Download PDFInfo
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 97
- 238000000034 method Methods 0.000 claims abstract description 68
- 230000008569 process Effects 0.000 claims abstract description 41
- 239000004065 semiconductor Substances 0.000 claims abstract description 41
- 238000000926 separation method Methods 0.000 claims abstract description 27
- 238000002955 isolation Methods 0.000 claims description 91
- 230000015556 catabolic process Effects 0.000 claims description 18
- 239000000956 alloy Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 229910002704 AlGaN Inorganic materials 0.000 claims 2
- 239000002470 thermal conductor Substances 0.000 claims 2
- 238000002513 implantation Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 16
- 239000000758 substrate Substances 0.000 abstract description 12
- 238000005516 engineering process Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 107
- 238000005530 etching Methods 0.000 description 30
- 229910002601 GaN Inorganic materials 0.000 description 16
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 239000012212 insulator Substances 0.000 description 10
- 239000003989 dielectric material Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005274 electronic transitions Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
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- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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Abstract
【解決手段】モノリシックパワーIC上の低電圧機能と高電圧機能を分利するために、III族窒化物材料が高電圧ICの分離構造に使用される。重要な動作パラメータは、III族窒化物材料を利用し、III族窒化物半導体材料において利用できる改善された破壊性能と熱性能により改善される。分離構造は、簡素化された製造工程を提供するために、III族窒化物材料を利用しエピタキシャル成長する誘電体層を含む。この工程は、更なる製造コストを回避するプレーナー製造技術の使用を可能にする。高電圧パワーICは、対応するシリコン構造に比較して、より小さなパッケージにおける性能を改善させた。
【選択図】図1D
Description
分離技法に関し、特にIII族窒化物デバイス、及びモノリシックパワーICの分離方法に関する。
12 本体層
14 分離層
20 デバイス
20、21 デバイス
24〜27 選択的にマスクされる部分
30〜33 隙間
40 構造体
41 エッチング領域
42 第1のIII族窒化物材料層
44 第2のIII族窒化物材料層
45A〜45C 高電圧電子デバイス
46、47 低電圧制御電子機器
48、49 分離層
Claims (27)
- 制御機能を実現する低電圧電子機器を備えた低電圧電子部と、
高電圧スイッチング機能のための高電圧電子機器を備えた高電圧電子部を含むIII族窒化物本体と、
高電圧電子部から低電圧電子部を高電圧分離するための前記低電圧部の底部と高電圧部の上部の間に配置されたIII族窒化物を含む分離構造と、を有し、
前記分離構造は、低電圧電子機器と高電圧電子機器の間の接続を可能にする開口部を含むことを特徴とするモノリシックパワーIC。 - 前記分離構造は、GaN、AlN、InN、及びそれらの合金からなる群から選ばれた1つ以上の材料を含む請求項1に記載のIC。
- 前記分離構造は、接合分離構造を含む請求項1に記載のIC。
- 前記分離構造は、誘電体分離を含む請求項1に記載のIC。
- 前記分離構造は、プレーナー構造を含む請求項1に記載のIC。
- 前記分離構造は、エピタキシャル層を含む請求項1に記載のIC。
- 前記エピタキシャル層は、ある百分率のGaNを含む請求項6に記載のIC。
- 前記エピタキシャル層は、ある百分率のAlGaNを含む請求項6に記載のIC。
- 前記高電圧電子部は、相対的に低いレジスタンス・エリア・プロダクト(resistance area product)を有する請求項1に記載のIC。
- 前記接合分離構造は、450Vより高い降伏電圧を示す請求項3に記載のIC。
- 前記分離構造は、III族窒化物からなる群から選ばれたある百分率の材料を組み入れた誘電体分離層を含む請求項1に記載のIC。
- 前記誘電体分離層は、良好な熱伝導体の特性を示す請求項11に記載のIC。
- 前記接合分離構造は、III族窒化物半導体PN接合を含む請求項3に記載のIC。
- エピタキシャル誘電体層で成長したエピタキシャル層を備えた電子デバイス構造を、さらに有する請求項6に記載のIC。
- さらに、横方向及び縦方向のデバイス幾何学構造を有する請求項1に記載のIC。
- 高電圧電子部を含むIII族窒化物本体の上にIII族窒化物の分離層を形成する段階と、
前記III族窒化物の分離層の上に低電圧電子部を形成して、前記低電圧電子部の底部が前記高電圧電子部から電気的に分離されるようにする段階と、
前記分離層によって高電圧電子部と低電圧電子部を分離しつつ、前記III族窒化物の分離層の一部を除去して低電圧電子部と高電圧電子部の間の接続を可能にする段階とを有する、モノリシックIC上の低電圧機能と高電圧機能を分離する方法。 - エピタキシャル工程により分離構造を形成する段階をさらに有する請求項16に記載の方法。
- 前記分離構造は、ある百分率のGaNを含んだエピタキシャル層を含む請求項17に記載の方法。
- 前記分離構造は、ある百分率のAlGaNを含んだエピタキシャル層を含む請求項17に記載の方法。
- 前記分離構造は、接合分離構造として形成される請求項16に記載の方法。
- 前記分離構造は、接合分離構造はP−N接合を含む請求項20に記載の方法。
- 前記分離構造は、誘電体分離構造を含む請求項16に記載の方法。
- さらに、相対的に良好な熱伝導体の分離構造を形成する請求項16に記載の方法。
- 前記分離構造は、プレーナー・プロセスを使用して形成される請求項16に記載の方法。
- モノリシックパワーIにおける横方向及び縦方向のデバイス幾何学構造を統合する段階をさらに有する請求項16に記載の方法。
- 前記分離構造における誘電体層を形成する段階をさらに有する請求項16に記載の方法。
- 注入工程により前記分離構造を形成する段階をさらに有する請求項16に記載の方法。
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US52761203P | 2003-12-05 | 2003-12-05 | |
US60/527,612 | 2003-12-05 | ||
US11/004,186 US7135753B2 (en) | 2003-12-05 | 2004-12-03 | Structure and method for III-nitride monolithic power IC |
US11/004,186 | 2004-12-03 |
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US7524707B2 (en) | 2005-08-23 | 2009-04-28 | Freescale Semiconductor, Inc. | Modified hybrid orientation technology |
US7700420B2 (en) * | 2006-04-12 | 2010-04-20 | Freescale Semiconductor, Inc. | Integrated circuit with different channel materials for P and N channel transistors and method therefor |
US7863877B2 (en) | 2006-12-11 | 2011-01-04 | International Rectifier Corporation | Monolithically integrated III-nitride power converter |
US9209281B2 (en) * | 2007-04-23 | 2015-12-08 | Infineon Technologies Ag | Method of manufacturing a device by locally heating one or more metallization layers and by means of selective etching |
US9281388B2 (en) | 2011-07-15 | 2016-03-08 | Infineon Technologies Americas Corp. | Composite semiconductor device with a SOI substrate having an integrated diode |
KR101946006B1 (ko) * | 2012-03-14 | 2019-02-08 | 삼성전자주식회사 | 전력 관리 칩 및 이를 포함하는 전력 관리 장치 |
US20140197461A1 (en) | 2013-01-14 | 2014-07-17 | International Rectifier Corporation | Semiconductor Structure Including A Spatially Confined Dielectric Region |
US9356045B2 (en) * | 2013-06-10 | 2016-05-31 | Raytheon Company | Semiconductor structure having column III-V isolation regions |
US10562068B2 (en) * | 2017-03-31 | 2020-02-18 | Sembcorp Marine Repairs & Upgrades Ptd. Ltd. | Ultrasonic device having large radiating area |
CN110071173B (zh) * | 2019-04-30 | 2023-04-18 | 英诺赛科(珠海)科技有限公司 | 半导体装置及其制造方法 |
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Also Published As
Publication number | Publication date |
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US7135753B2 (en) | 2006-11-14 |
US20060281279A1 (en) | 2006-12-14 |
US9142637B2 (en) | 2015-09-22 |
US7892938B2 (en) | 2011-02-22 |
US20110143517A1 (en) | 2011-06-16 |
JP5405847B2 (ja) | 2014-02-05 |
US20050121729A1 (en) | 2005-06-09 |
JP2005175477A (ja) | 2005-06-30 |
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