JP2009111339A5 - - Google Patents

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Publication number
JP2009111339A5
JP2009111339A5 JP2008188714A JP2008188714A JP2009111339A5 JP 2009111339 A5 JP2009111339 A5 JP 2009111339A5 JP 2008188714 A JP2008188714 A JP 2008188714A JP 2008188714 A JP2008188714 A JP 2008188714A JP 2009111339 A5 JP2009111339 A5 JP 2009111339A5
Authority
JP
Japan
Prior art keywords
light emitting
diode package
emitting diode
light
series
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2008188714A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009111339A (ja
Filing date
Publication date
Priority claimed from KR1020070108687A external-priority patent/KR101423723B1/ko
Application filed filed Critical
Publication of JP2009111339A publication Critical patent/JP2009111339A/ja
Publication of JP2009111339A5 publication Critical patent/JP2009111339A5/ja
Withdrawn legal-status Critical Current

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JP2008188714A 2007-10-29 2008-07-22 発光ダイオードパッケージ Withdrawn JP2009111339A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070108687A KR101423723B1 (ko) 2007-10-29 2007-10-29 발광 다이오드 패키지

Publications (2)

Publication Number Publication Date
JP2009111339A JP2009111339A (ja) 2009-05-21
JP2009111339A5 true JP2009111339A5 (enExample) 2011-09-08

Family

ID=40582209

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008188714A Withdrawn JP2009111339A (ja) 2007-10-29 2008-07-22 発光ダイオードパッケージ

Country Status (4)

Country Link
US (1) US8507923B2 (enExample)
JP (1) JP2009111339A (enExample)
KR (1) KR101423723B1 (enExample)
TW (1) TWI381516B (enExample)

Families Citing this family (26)

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US8536584B2 (en) * 2007-11-14 2013-09-17 Cree, Inc. High voltage wire bond free LEDS
US7985970B2 (en) * 2009-04-06 2011-07-26 Cree, Inc. High voltage low current surface-emitting LED
US9634191B2 (en) 2007-11-14 2017-04-25 Cree, Inc. Wire bond free wafer level LED
US8575633B2 (en) * 2008-12-08 2013-11-05 Cree, Inc. Light emitting diode with improved light extraction
KR101114592B1 (ko) 2009-02-17 2012-03-09 엘지이노텍 주식회사 발광 디바이스 패키지 및 그 제조방법
TWI466266B (zh) * 2009-02-24 2014-12-21 晶元光電股份有限公司 陣列式發光元件及其裝置
US9093293B2 (en) 2009-04-06 2015-07-28 Cree, Inc. High voltage low current surface emitting light emitting diode
US8476668B2 (en) 2009-04-06 2013-07-02 Cree, Inc. High voltage low current surface emitting LED
KR100986570B1 (ko) 2009-08-31 2010-10-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
TWM388109U (en) * 2009-10-15 2010-09-01 Intematix Tech Center Corp Light emitting diode apparatus
KR101163838B1 (ko) * 2009-10-19 2012-07-09 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
EP2367203A1 (en) * 2010-02-26 2011-09-21 Samsung LED Co., Ltd. Semiconductor light emitting device having multi-cell array and method for manufacturing the same
KR101072193B1 (ko) * 2010-04-01 2011-10-10 엘지이노텍 주식회사 발광소자, 발광소자 제조방법, 및 발광소자 패키지
US8395312B2 (en) * 2010-04-19 2013-03-12 Bridgelux, Inc. Phosphor converted light source having an additional LED to provide long wavelength light
KR101114151B1 (ko) * 2010-08-09 2012-02-22 엘지이노텍 주식회사 발광 소자 및 이를 구비한 조명 시스템
JP5676395B2 (ja) 2010-08-09 2015-02-25 エルジー イノテック カンパニー リミテッド 発光素子
TWI479641B (zh) * 2010-09-20 2015-04-01 英特明光能股份有限公司 發光元件及其製作方法
KR101142965B1 (ko) * 2010-09-24 2012-05-08 서울반도체 주식회사 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
US8455882B2 (en) 2010-10-15 2013-06-04 Cree, Inc. High efficiency LEDs
KR20130019276A (ko) * 2011-08-16 2013-02-26 엘지이노텍 주식회사 발광소자
CN103633232B (zh) * 2012-08-22 2016-09-07 华夏光股份有限公司 半导体发光装置
TWI549322B (zh) * 2013-04-10 2016-09-11 映瑞光電科技（上海）有限公司 一種結合磊晶結構與封裝基板爲一體之整合式ｌｅｄ元件及其製作方法
KR101582494B1 (ko) * 2014-05-13 2016-01-19 (주)포인트엔지니어링 칩 실장용 기판 및 칩이 실장된 칩 패키지
CN109031779B (zh) * 2018-07-25 2024-06-11 京东方科技集团股份有限公司 发光二极管基板、背光模组和显示装置
EP3831911B1 (en) * 2019-12-05 2022-06-08 Friedrich-Alexander-Universität Erlangen-Nürnberg Composite wavelength converter
KR102810913B1 (ko) * 2020-10-20 2025-05-23 삼성디스플레이 주식회사 화소 및 이를 구비한 표시 장치

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US5187377A (en) * 1988-07-15 1993-02-16 Sharp Kabushiki Kaisha LED array for emitting light of multiple wavelengths
JPH0467360U (enExample) * 1990-10-24 1992-06-15
US5808592A (en) * 1994-04-28 1998-09-15 Toyoda Gosei Co., Ltd. Integrated light-emitting diode lamp and method of producing the same
JP3505374B2 (ja) * 1997-11-14 2004-03-08 三洋電機株式会社 発光部品
JP2000294834A (ja) * 1999-04-09 2000-10-20 Matsushita Electronics Industry Corp 半導体発光装置
JP2002057376A (ja) * 2000-05-31 2002-02-22 Matsushita Electric Ind Co Ltd Ｌｅｄランプ
US6547249B2 (en) * 2001-03-29 2003-04-15 Lumileds Lighting U.S., Llc Monolithic series/parallel led arrays formed on highly resistive substrates
JP3822545B2 (ja) * 2002-04-12 2006-09-20 士郎 酒井 発光装置
JP2004055772A (ja) * 2002-07-18 2004-02-19 Citizen Electronics Co Ltd Ｌｅｄ発光装置
ES2362407T3 (es) 2002-08-29 2011-07-04 Seoul Semiconductor Co., Ltd. Dispositivo emisor de luz provisto de diodos emisores de luz.
US6957899B2 (en) * 2002-10-24 2005-10-25 Hongxing Jiang Light emitting diodes for high AC voltage operation and general lighting
EP1649514B1 (en) * 2003-07-30 2014-01-01 Panasonic Corporation Semiconductor light emitting device, light emitting module, and lighting apparatus
US20060285324A1 (en) * 2003-08-29 2006-12-21 Koninklijke Philips Electronics N.V. Color-mixing lighting system
JP2005093712A (ja) * 2003-09-17 2005-04-07 Stanley Electric Co Ltd 半導体発光装置
JP2008523637A (ja) * 2004-12-14 2008-07-03 ソウル オプト−デバイス カンパニー リミテッド 複数の発光セルを有する発光素子及びそれを搭載したパッケージ
US20060124943A1 (en) * 2004-12-14 2006-06-15 Elite Optoelectronics Inc. Large-sized light-emitting diodes with improved light extraction efficiency
JP2007036041A (ja) * 2005-07-28 2007-02-08 Sony Corp 発光装置及び光学装置
EP1949765B1 (en) * 2005-11-18 2017-07-12 Cree, Inc. Solid state lighting panels with variable voltage boost current sources
JP2007173378A (ja) * 2005-12-20 2007-07-05 Casio Comput Co Ltd 発光素子

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