JP2009111339A - 発光ダイオードパッケージ - Google Patents

発光ダイオードパッケージ Download PDF

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Publication number
JP2009111339A
JP2009111339A JP2008188714A JP2008188714A JP2009111339A JP 2009111339 A JP2009111339 A JP 2009111339A JP 2008188714 A JP2008188714 A JP 2008188714A JP 2008188714 A JP2008188714 A JP 2008188714A JP 2009111339 A JP2009111339 A JP 2009111339A
Authority
JP
Japan
Prior art keywords
light emitting
layer
light
semiconductor layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2008188714A
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English (en)
Japanese (ja)
Other versions
JP2009111339A5 (enExample
Inventor
Dae Won Kim
ウォン キム、デ
Dae Sung Kal
スン ガル、デ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seoul Viosys Co Ltd
Original Assignee
Seoul Optodevice Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seoul Optodevice Co Ltd filed Critical Seoul Optodevice Co Ltd
Publication of JP2009111339A publication Critical patent/JP2009111339A/ja
Publication of JP2009111339A5 publication Critical patent/JP2009111339A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
JP2008188714A 2007-10-29 2008-07-22 発光ダイオードパッケージ Withdrawn JP2009111339A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070108687A KR101423723B1 (ko) 2007-10-29 2007-10-29 발광 다이오드 패키지

Publications (2)

Publication Number Publication Date
JP2009111339A true JP2009111339A (ja) 2009-05-21
JP2009111339A5 JP2009111339A5 (enExample) 2011-09-08

Family

ID=40582209

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008188714A Withdrawn JP2009111339A (ja) 2007-10-29 2008-07-22 発光ダイオードパッケージ

Country Status (4)

Country Link
US (1) US8507923B2 (enExample)
JP (1) JP2009111339A (enExample)
KR (1) KR101423723B1 (enExample)
TW (1) TWI381516B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014207446A (ja) * 2013-04-10 2014-10-30 ネオバルブ テクノロジーズ, インク.NeoBulb Technologies, Inc. エピタキシャル構造とパッケージ基板を一体化したｌｅｄ部品およびその製造方法
WO2022085922A1 (ko) * 2020-10-20 2022-04-28 삼성디스플레이 주식회사 화소 및 이를 구비한 표시 장치

Families Citing this family (24)

* Cited by examiner, † Cited by third party
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US7985970B2 (en) * 2009-04-06 2011-07-26 Cree, Inc. High voltage low current surface-emitting LED
US9634191B2 (en) 2007-11-14 2017-04-25 Cree, Inc. Wire bond free wafer level LED
US8536584B2 (en) * 2007-11-14 2013-09-17 Cree, Inc. High voltage wire bond free LEDS
US8575633B2 (en) * 2008-12-08 2013-11-05 Cree, Inc. Light emitting diode with improved light extraction
KR101114592B1 (ko) * 2009-02-17 2012-03-09 엘지이노텍 주식회사 발광 디바이스 패키지 및 그 제조방법
TWI466266B (zh) * 2009-02-24 2014-12-21 晶元光電股份有限公司 陣列式發光元件及其裝置
US8476668B2 (en) 2009-04-06 2013-07-02 Cree, Inc. High voltage low current surface emitting LED
US9093293B2 (en) 2009-04-06 2015-07-28 Cree, Inc. High voltage low current surface emitting light emitting diode
KR100986570B1 (ko) 2009-08-31 2010-10-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
TWM388109U (en) * 2009-10-15 2010-09-01 Intematix Tech Center Corp Light emitting diode apparatus
KR101163838B1 (ko) * 2009-10-19 2012-07-09 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
EP2367203A1 (en) * 2010-02-26 2011-09-21 Samsung LED Co., Ltd. Semiconductor light emitting device having multi-cell array and method for manufacturing the same
KR101072193B1 (ko) * 2010-04-01 2011-10-10 엘지이노텍 주식회사 발광소자, 발광소자 제조방법, 및 발광소자 패키지
US8395312B2 (en) * 2010-04-19 2013-03-12 Bridgelux, Inc. Phosphor converted light source having an additional LED to provide long wavelength light
JP5676395B2 (ja) 2010-08-09 2015-02-25 エルジー イノテック カンパニー リミテッド 発光素子
KR101114151B1 (ko) * 2010-08-09 2012-02-22 엘지이노텍 주식회사 발광 소자 및 이를 구비한 조명 시스템
TWI479641B (zh) * 2010-09-20 2015-04-01 英特明光能股份有限公司 發光元件及其製作方法
KR101142965B1 (ko) * 2010-09-24 2012-05-08 서울반도체 주식회사 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
US8455882B2 (en) 2010-10-15 2013-06-04 Cree, Inc. High efficiency LEDs
KR20130019276A (ko) * 2011-08-16 2013-02-26 엘지이노텍 주식회사 발광소자
CN103633232B (zh) * 2012-08-22 2016-09-07 华夏光股份有限公司 半导体发光装置
KR101582494B1 (ko) * 2014-05-13 2016-01-19 (주)포인트엔지니어링 칩 실장용 기판 및 칩이 실장된 칩 패키지
CN109031779B (zh) * 2018-07-25 2024-06-11 京东方科技集团股份有限公司 发光二极管基板、背光模组和显示装置
EP3831911B1 (en) * 2019-12-05 2022-06-08 Friedrich-Alexander-Universität Erlangen-Nürnberg Composite wavelength converter

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0467360U (enExample) * 1990-10-24 1992-06-15
JPH11150303A (ja) * 1997-11-14 1999-06-02 Sanyo Electric Co Ltd 発光部品
JP2000294834A (ja) * 1999-04-09 2000-10-20 Matsushita Electronics Industry Corp 半導体発光装置
JP2002057376A (ja) * 2000-05-31 2002-02-22 Matsushita Electric Ind Co Ltd Ｌｅｄランプ
JP2004006582A (ja) * 2002-04-12 2004-01-08 Shiro Sakai 発光装置
JP2004055772A (ja) * 2002-07-18 2004-02-19 Citizen Electronics Co Ltd Ｌｅｄ発光装置
WO2006098545A2 (en) * 2004-12-14 2006-09-21 Seoul Opto Device Co., Ltd. Light emitting device having a plurality of light emitting cells and package mounting the same
JP2007036041A (ja) * 2005-07-28 2007-02-08 Sony Corp 発光装置及び光学装置
JP2007173378A (ja) * 2005-12-20 2007-07-05 Casio Comput Co Ltd 発光素子

Family Cites Families (10)

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US5187377A (en) * 1988-07-15 1993-02-16 Sharp Kabushiki Kaisha LED array for emitting light of multiple wavelengths
US5808592A (en) * 1994-04-28 1998-09-15 Toyoda Gosei Co., Ltd. Integrated light-emitting diode lamp and method of producing the same
US6547249B2 (en) * 2001-03-29 2003-04-15 Lumileds Lighting U.S., Llc Monolithic series/parallel led arrays formed on highly resistive substrates
EP2154722B1 (en) 2002-08-29 2017-10-11 Seoul Semiconductor Co., Ltd. Light-emitting device having light-emitting diodes
US6957899B2 (en) * 2002-10-24 2005-10-25 Hongxing Jiang Light emitting diodes for high AC voltage operation and general lighting
JP4598767B2 (ja) * 2003-07-30 2010-12-15 パナソニック株式会社 半導体発光装置、発光モジュール、および照明装置
KR20060134908A (ko) * 2003-08-29 2006-12-28 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 혼색 조명 시스템
JP2005093712A (ja) * 2003-09-17 2005-04-07 Stanley Electric Co Ltd 半導体発光装置
US20060124943A1 (en) * 2004-12-14 2006-06-15 Elite Optoelectronics Inc. Large-sized light-emitting diodes with improved light extraction efficiency
JP5249773B2 (ja) * 2005-11-18 2013-07-31 クリー インコーポレイテッド 可変電圧ブースト電流源を有する固体照明パネル

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0467360U (enExample) * 1990-10-24 1992-06-15
JPH11150303A (ja) * 1997-11-14 1999-06-02 Sanyo Electric Co Ltd 発光部品
JP2000294834A (ja) * 1999-04-09 2000-10-20 Matsushita Electronics Industry Corp 半導体発光装置
JP2002057376A (ja) * 2000-05-31 2002-02-22 Matsushita Electric Ind Co Ltd Ｌｅｄランプ
JP2004006582A (ja) * 2002-04-12 2004-01-08 Shiro Sakai 発光装置
JP2004055772A (ja) * 2002-07-18 2004-02-19 Citizen Electronics Co Ltd Ｌｅｄ発光装置
WO2006098545A2 (en) * 2004-12-14 2006-09-21 Seoul Opto Device Co., Ltd. Light emitting device having a plurality of light emitting cells and package mounting the same
JP2007036041A (ja) * 2005-07-28 2007-02-08 Sony Corp 発光装置及び光学装置
JP2007173378A (ja) * 2005-12-20 2007-07-05 Casio Comput Co Ltd 発光素子

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014207446A (ja) * 2013-04-10 2014-10-30 ネオバルブ テクノロジーズ, インク.NeoBulb Technologies, Inc. エピタキシャル構造とパッケージ基板を一体化したｌｅｄ部品およびその製造方法
WO2022085922A1 (ko) * 2020-10-20 2022-04-28 삼성디스플레이 주식회사 화소 및 이를 구비한 표시 장치
US11501698B2 (en) 2020-10-20 2022-11-15 Samsung Display Co., Ltd. Pixel and display device including an emission unit operating in different modes

Also Published As

Publication number Publication date
US20090109151A1 (en) 2009-04-30
KR101423723B1 (ko) 2014-08-04
KR20090043058A (ko) 2009-05-06
US8507923B2 (en) 2013-08-13
TWI381516B (zh) 2013-01-01
TW200919701A (en) 2009-05-01

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