TWI381516B - 發光二極體封裝 - Google Patents

發光二極體封裝 Download PDF

Info

Publication number
TWI381516B
TWI381516B TW097128685A TW97128685A TWI381516B TW I381516 B TWI381516 B TW I381516B TW 097128685 A TW097128685 A TW 097128685A TW 97128685 A TW97128685 A TW 97128685A TW I381516 B TWI381516 B TW I381516B
Authority
TW
Taiwan
Prior art keywords
light emitting
layer
light
serial array
semiconductor layer
Prior art date
Application number
TW097128685A
Other languages
English (en)
Chinese (zh)
Other versions
TW200919701A (en
Inventor
Dae-Won Kim
Dae-Sung Kal
Original Assignee
Seoul Opto Device Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seoul Opto Device Co Ltd filed Critical Seoul Opto Device Co Ltd
Publication of TW200919701A publication Critical patent/TW200919701A/zh
Application granted granted Critical
Publication of TWI381516B publication Critical patent/TWI381516B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49107Connecting at different heights on the semiconductor or solid-state body

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
TW097128685A 2007-10-29 2008-07-29 發光二極體封裝 TWI381516B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070108687A KR101423723B1 (ko) 2007-10-29 2007-10-29 발광 다이오드 패키지

Publications (2)

Publication Number Publication Date
TW200919701A TW200919701A (en) 2009-05-01
TWI381516B true TWI381516B (zh) 2013-01-01

Family

ID=40582209

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097128685A TWI381516B (zh) 2007-10-29 2008-07-29 發光二極體封裝

Country Status (4)

Country Link
US (1) US8507923B2 (enExample)
JP (1) JP2009111339A (enExample)
KR (1) KR101423723B1 (enExample)
TW (1) TWI381516B (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7985970B2 (en) * 2009-04-06 2011-07-26 Cree, Inc. High voltage low current surface-emitting LED
US9634191B2 (en) 2007-11-14 2017-04-25 Cree, Inc. Wire bond free wafer level LED
US8536584B2 (en) * 2007-11-14 2013-09-17 Cree, Inc. High voltage wire bond free LEDS
US8575633B2 (en) * 2008-12-08 2013-11-05 Cree, Inc. Light emitting diode with improved light extraction
KR101114592B1 (ko) * 2009-02-17 2012-03-09 엘지이노텍 주식회사 발광 디바이스 패키지 및 그 제조방법
TWI466266B (zh) * 2009-02-24 2014-12-21 晶元光電股份有限公司 陣列式發光元件及其裝置
US8476668B2 (en) 2009-04-06 2013-07-02 Cree, Inc. High voltage low current surface emitting LED
US9093293B2 (en) 2009-04-06 2015-07-28 Cree, Inc. High voltage low current surface emitting light emitting diode
KR100986570B1 (ko) 2009-08-31 2010-10-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
TWM388109U (en) * 2009-10-15 2010-09-01 Intematix Tech Center Corp Light emitting diode apparatus
KR101163838B1 (ko) * 2009-10-19 2012-07-09 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
EP2367203A1 (en) * 2010-02-26 2011-09-21 Samsung LED Co., Ltd. Semiconductor light emitting device having multi-cell array and method for manufacturing the same
KR101072193B1 (ko) * 2010-04-01 2011-10-10 엘지이노텍 주식회사 발광소자, 발광소자 제조방법, 및 발광소자 패키지
US8395312B2 (en) * 2010-04-19 2013-03-12 Bridgelux, Inc. Phosphor converted light source having an additional LED to provide long wavelength light
JP5676395B2 (ja) 2010-08-09 2015-02-25 エルジー イノテック カンパニー リミテッド 発光素子
KR101114151B1 (ko) * 2010-08-09 2012-02-22 엘지이노텍 주식회사 발광 소자 및 이를 구비한 조명 시스템
TWI479641B (zh) * 2010-09-20 2015-04-01 英特明光能股份有限公司 發光元件及其製作方法
KR101142965B1 (ko) * 2010-09-24 2012-05-08 서울반도체 주식회사 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
US8455882B2 (en) 2010-10-15 2013-06-04 Cree, Inc. High efficiency LEDs
KR20130019276A (ko) * 2011-08-16 2013-02-26 엘지이노텍 주식회사 발광소자
CN103633232B (zh) * 2012-08-22 2016-09-07 华夏光股份有限公司 半导体发光装置
TWI549322B (zh) * 2013-04-10 2016-09-11 映瑞光電科技(上海)有限公司 一種結合磊晶結構與封裝基板爲一體之整合式led元件及其製作方法
KR101582494B1 (ko) * 2014-05-13 2016-01-19 (주)포인트엔지니어링 칩 실장용 기판 및 칩이 실장된 칩 패키지
CN109031779B (zh) * 2018-07-25 2024-06-11 京东方科技集团股份有限公司 发光二极管基板、背光模组和显示装置
EP3831911B1 (en) * 2019-12-05 2022-06-08 Friedrich-Alexander-Universität Erlangen-Nürnberg Composite wavelength converter
KR102810913B1 (ko) 2020-10-20 2025-05-23 삼성디스플레이 주식회사 화소 및 이를 구비한 표시 장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040080941A1 (en) * 2002-10-24 2004-04-29 Hongxing Jiang Light emitting diodes for high AC voltage operation and general lighting
US20060124943A1 (en) * 2004-12-14 2006-06-15 Elite Optoelectronics Inc. Large-sized light-emitting diodes with improved light extraction efficiency
US20060180818A1 (en) * 2003-07-30 2006-08-17 Hideo Nagai Semiconductor light emitting device, light emitting module and lighting apparatus
US20060285324A1 (en) * 2003-08-29 2006-12-21 Koninklijke Philips Electronics N.V. Color-mixing lighting system

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5187377A (en) * 1988-07-15 1993-02-16 Sharp Kabushiki Kaisha LED array for emitting light of multiple wavelengths
JPH0467360U (enExample) * 1990-10-24 1992-06-15
US5808592A (en) * 1994-04-28 1998-09-15 Toyoda Gosei Co., Ltd. Integrated light-emitting diode lamp and method of producing the same
JP3505374B2 (ja) * 1997-11-14 2004-03-08 三洋電機株式会社 発光部品
JP2000294834A (ja) * 1999-04-09 2000-10-20 Matsushita Electronics Industry Corp 半導体発光装置
JP2002057376A (ja) * 2000-05-31 2002-02-22 Matsushita Electric Ind Co Ltd Ledランプ
US6547249B2 (en) * 2001-03-29 2003-04-15 Lumileds Lighting U.S., Llc Monolithic series/parallel led arrays formed on highly resistive substrates
JP3822545B2 (ja) * 2002-04-12 2006-09-20 士郎 酒井 発光装置
JP2004055772A (ja) * 2002-07-18 2004-02-19 Citizen Electronics Co Ltd Led発光装置
EP2154722B1 (en) 2002-08-29 2017-10-11 Seoul Semiconductor Co., Ltd. Light-emitting device having light-emitting diodes
JP2005093712A (ja) * 2003-09-17 2005-04-07 Stanley Electric Co Ltd 半導体発光装置
WO2006098545A2 (en) * 2004-12-14 2006-09-21 Seoul Opto Device Co., Ltd. Light emitting device having a plurality of light emitting cells and package mounting the same
JP2007036041A (ja) * 2005-07-28 2007-02-08 Sony Corp 発光装置及び光学装置
JP5249773B2 (ja) * 2005-11-18 2013-07-31 クリー インコーポレイテッド 可変電圧ブースト電流源を有する固体照明パネル
JP2007173378A (ja) * 2005-12-20 2007-07-05 Casio Comput Co Ltd 発光素子

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040080941A1 (en) * 2002-10-24 2004-04-29 Hongxing Jiang Light emitting diodes for high AC voltage operation and general lighting
US20060180818A1 (en) * 2003-07-30 2006-08-17 Hideo Nagai Semiconductor light emitting device, light emitting module and lighting apparatus
US20060285324A1 (en) * 2003-08-29 2006-12-21 Koninklijke Philips Electronics N.V. Color-mixing lighting system
US20060124943A1 (en) * 2004-12-14 2006-06-15 Elite Optoelectronics Inc. Large-sized light-emitting diodes with improved light extraction efficiency

Also Published As

Publication number Publication date
US20090109151A1 (en) 2009-04-30
KR101423723B1 (ko) 2014-08-04
KR20090043058A (ko) 2009-05-06
US8507923B2 (en) 2013-08-13
TW200919701A (en) 2009-05-01
JP2009111339A (ja) 2009-05-21

Similar Documents

Publication Publication Date Title
TWI381516B (zh) 發光二極體封裝
CN101263610B (zh) 具有竖直堆叠发光二极管的发光器件
EP2074667B1 (en) Light emitting diode having light emitting cell with different size and light emitting device thereof
US9673355B2 (en) Light emitting diode having electrode pads
KR102430500B1 (ko) 반도체 발광소자 및 이를 이용한 led 모듈
US7994523B2 (en) AC light emitting diode having improved transparent electrode structure
CN100487932C (zh) 具有多个发光单元的发光装置和安装所述发光装置的封装
CN101889354B (zh) 发光器件封装及其制造方法
TW201203597A (en) Light emitting diode having AlInGaP active layer and method of fabricating the same
CN1819255A (zh) 基于微型发光二极管的高压交直流指示灯
TWI523262B (zh) 具多單元陣列之半導體發光裝置及製造其之方法
KR20110132161A (ko) 반도체 발광 소자 및 그 제조방법
KR100635346B1 (ko) 색변환 물질층을 갖는 교류용 발광 다이오드 칩 및 그것을제조하는 방법
KR101547322B1 (ko) 발광 다이오드 패키지
KR101272704B1 (ko) AlInGaP 활성층을 갖는 발광 다이오드 및 그것을제조하는 방법
KR100670929B1 (ko) 플립칩 구조의 발광 소자 및 이의 제조 방법
KR101216934B1 (ko) 다수의 셀이 결합된 발광 소자 및 그 제조 방법
KR100898585B1 (ko) 다수의 셀이 결합된 발광 소자 및 그 제조 방법
CN116314505A (zh) 一种双发光区及多发光区的单色led

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees