CN103715190B - 发光器件 - Google Patents

发光器件 Download PDF

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Publication number
CN103715190B
CN103715190B CN201310451485.1A CN201310451485A CN103715190B CN 103715190 B CN103715190 B CN 103715190B CN 201310451485 A CN201310451485 A CN 201310451485A CN 103715190 B CN103715190 B CN 103715190B
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Prior art keywords
luminescent device
led chip
electrode
phosphor
metal film
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CN201310451485.1A
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CN103715190A (zh
Inventor
三瓶友広
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Suzhou Lekin Semiconductor Co Ltd
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LG Innotek Co Ltd
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Abstract

一种发光器件，在用于照明或显示的背光单元中使用，该发光器件被设置为包括：衬底，包括第一电极和第二电极；LED芯片，布置在第一电极上；以及坝体，布置在衬底上，其中坝体被布置为与LED芯片间隔开，其中衬底包括直接铜接合（DCB）衬底，该DCB衬底包含第一铜层和第二铜层的，以及其中第一电极和第二电极分别包括填充其表面的孔隙的金属膜。在本申请提供的发光器件中，金属膜被布置成填充已位于第一电极图案的表面中以及第二电极图案的表面中的孔隙，因此，可以提高第一电极图案与LED芯片之间的安装力，并且提高第二电极图案与接合线之间的接合力。

Description

发光器件
技术领域
本申请的实施例涉及一种在用于照明或显示的背光单元中使用的发光器件。
背景技术
这里，将提供本申请实施例的现有技术，该现有技术不一定必然是公知的。
发光器件（LED）是用于将电能转换成光的半导体器件。与现有光源（例如，荧光灯、白炽灯等）相比，LED的功耗低、具有半永久性寿命、响应速度快、安全以及环境友好。由于这些原因，许多研究都致力于用LED替代现有光源。LED现在被逐渐地用作照明器件的光源（例如，在室内和室外使用的各种灯、液晶显示器件、电子招牌以及路灯等）。
一般，使用LED的发光器件包括：两种电极图案，其被布置在衬底上；模铸壳体（mold housing），在其内部容纳电极图案的一部分，并被注入模铸，使得腔体形成以用作光发射器的填充空间；热沉层，其被布置在腔体中的电极图案上；LED芯片，其被布置在热沉层上；以及接合线，其将电极图案和LED芯片电连接。这里，光发射器通过填充空腔来密封LED芯片。取决于待实现的LED芯片的颜色，光发射器可以包括磷光体（phosphor）或可以由透明树脂形成。
发明内容
本申请实施例的目的之一是提供一种能够提高电极图案与LED芯片之间的安装力的发光器件。
一个实施例是一种发光器件。该发光器件包括：衬底，包括第一电极和第二电极；LED芯片，布置在第一电极上；以及坝体，布置在衬底上，其中坝体被布置为与LED芯片间隔开，其中衬底包括直接铜接合（DCB）衬底，该DCB衬底包含第一铜层和第二铜层，以及其中第一电极和第二电极分别包括填充其表面的孔隙的金属膜。
通过将金属膏涂敷到所述孔隙所在的表面上然后通过将所述金属膏干燥、烧结以及平坦化来布置所述金属膜。
金属膜可以包括Au和Ag中至少之一。
LED芯片可以被布置在第一电极的金属膜上，并且其中LED芯片和第一电极的金属膜通过粘合剂彼此接合。
粘合剂可以包括AuSn。
发光器件还可以包括将LED芯片与第二电极的金属膜连接的接合线。
发光器件还可以包括用来激励从LED芯片发出的光的磷光体。
磷光体可以被布置在LED芯片上。
磷光体可以包括从由如下磷光体组成的组中选出的至少一种磷光体：基于硅酸盐的磷光体、基于硫化物的磷光体、基于YAG的磷光体、基于TAG的磷光体以及基于氮化物的磷光体。
坝体可以是绝缘材料。
坝体的高度可以大于LED芯片的高度。
发光器件还可以包括形成在第一电极和第二电极上的封装层（encapsulationlayer）。
封装层可以是透光保护树脂。
发光器件还可以包括布置在第一电极和第二电极上方的防反射玻璃。
防反射玻璃可以与衬底平行。
防反射玻璃可以被布置在坝体上。
防反射玻璃可以被布置为与磷光体间隔开。
防反射玻璃可以包括膜。
发光器件还可以包括布置在第一铜层的表面上的防腐层。
衬底还可以包括衬底主体。
衬底主体可以被布置在第一铜层与第二铜层之间。
第二电极和安装在第一电极上的LED芯片可以彼此电连接。
坝体可以具有半球形、半椭圆形、半圆形、四边形以及具有上削边（upperchamfered edge）的四边形的任何一种形状。
在本申请的发光器件中，金属膜被布置成填充孔隙，该孔隙已位于第一电极图案的表面（其上安装有LED芯片）中以及第二电极图案的表面（连接至电极图案的接合线接合至该第二电极图案）中。因此，可以提高第一电极图案与LED芯片之间的安装力。而且，也可以提高第二电极图案与接合线之间的接合力。
附图说明
可以参考下列附图来具体描述配置和实施例，所述附图中相似的附图标记表示相似的元件，且其中：
图1为根据第一实施例的发光器件的剖视图；
图2为示出由图1中‘A’所示部分的放大的剖视图；
图3A至图3C为用于描述形成图1的DCB衬底的金属膜的方法的剖视图；
图4为示出由图1中‘B’所示部分的放大的剖视图；
图5为根据第二实施例的发光器件的剖视图；以及
图6为示出图5中的LED芯片和透镜彼此耦接的发光器件的示意图。
具体实施方式
为了说明的方便和清晰起见，每一层的厚度或尺寸可以被放大、省略或示意性示出。每一个组件的尺寸可能不一定表示其实际尺寸。
应当理解，当一元件被称为在另一个元件“上方”或“下方”时，其可直接位于该元件上方/下方，和/或也可以存在一个或多个介于中间的元件。当一元件被称为在“上方”或“下方”时，基于该元件能够包括“在该元件下方”以及“在该元件上方”。
可以参考附图具体描述实施例。
图1为根据第一实施例的发光器件的剖视图。参考图1，将描述根据第一实施例的发光器件的结构。
如图1所示，根据第一实施例的发光器件可以包括直接铜接合（DCB）衬底11、LED芯片14、磷光体16、接合线17、坝体18以及封装层“S”。
DCB衬底11可以包括衬底主体1、第一铜层2以及第二铜层3。
衬底主体1可以由陶瓷材料、高分子材料、树脂材料、硅材料等的至少任何之一或通过它们的任何组合形成，并且衬底主体1可以具有前侧101和面向前侧101的后侧102。前侧101和后侧102分别形成衬底主体1的外表面。如果衬底主体1的外表面是前侧101，则面向前侧101的另一个外表面可以是后侧102。
除了衬底主体1的上述材料之外，能够起到DCB衬底11的绝缘层和主体的作用的任何材料都能够用作衬底主体1的材料。例如，Al2O3、ALN、BeO等可以被用作衬底主体1的材料。
第一铜层2可以被布置在衬底主体1的前侧上。第二铜层3可以被布置在衬底主体1的后侧上。电极图案可以通过掩模蚀刻特定的电路图案而形成在第一铜层2上。因此，第一铜层2可以包括多个电极图案。这里，多个电极图案可以是第一电极图案12和第二电极图案13。
衬底主体1可以具有0.2至0.32mm的厚度。而且，第一铜层2和第二铜层3可以分别具有0.15至0.25mm的厚度。而且，考虑到LED芯片14的散热或LED芯片14的结合（junction），电极图案可以形成为彼此电气隔离。电极图案可以彼此分开0.25至0.4mm范围内的距离。
可以安装用于驱动LED芯片14的驱动电路（未示出）。驱动电路（未示出）可以起到驱动LED芯片14的作用，以便根据发光器件的目的和用途执行功能。
DCB衬底11是导热衬底。DCB衬底11可以将从LED芯片14产生的热量散发到外部。为了执行功能的目的，DCB衬底11可以包括第一铜层2和第二铜层3。
虽然在实施例中示出了第一铜层2和第二铜层3，然而也允许第一铜层2和第二铜层3由其他的金属层形成。例如，第一铜层2和第二铜层3可以由从由如下金属组成的组中选出的至少任意一种金属形成的金属层形成：Ag、Au、Ni、Al、Cr、Ru、Re、Pb、Sn、In、Zn、Pt、Mo、Ti、Ta、W等，或者可以由上述金属材料形成的合金层形成。
第一电极图案12和第二电极图案13可以由用于电连接至LED芯片14的电极组成。而且，第一电极图案12和第二电极图案13可以被电连接至用于驱动LED芯片14的驱动电路的方式被图案化。第一电极图案12和第二电极图案13可以执行将发光器件内的组件连接的电线的功能。因此，第一电极图案12和第二电极图案13可以由用于驱动LED芯片14的阳极和阴极构成。LED芯片14可以被安装在第一电极图案12上，第二电极图案13可以电连接至LED芯片14的电极焊盘15。
LED芯片14是一种用于发光的发光装置。LED芯片14可以是彩色LED芯片和UV LED芯片之一。彩色LED芯片可以形成为通过将蓝色LED芯片、红色LED芯片、绿色LED芯片、黄绿色LED芯片以及白色LED芯片的至少一个或多个结合获得的封装的形式。至少一个LED芯片14被安装在DCB衬底11的特定区域中，使得安装有LED芯片14的区域是发光区域。更具体地，LED芯片14可以被安装在DCB衬底11的第一电极图案12上的特定区域中。
图2为示出由图1中的‘A’所示部分的放大的剖视图。在下文中，将参考图2描述由“A”表示的部分的结构。
如图2所示，LED芯片14可以被安装为使得形成在第一电极图案12上的金属膜35和涂敷在金属膜35上的粘合剂“A”插入到第一铜层2和LED芯片14之间。这里，金属膜35可以由Ag、Au等制成，粘合剂“A”可以由AuSn等制成。然而，金属膜35和粘合剂“A”的材料不限于此。
金属膜35可以仅形成在安装有LED芯片14的部分上。由于金属膜35，可以提高第一电极图案12与LED芯片14之间的安装力。
如图3A所示，通过第一铜层2的晶界（grain boundary），多个孔隙31可以形成在包括第一电极图案12的第一铜层2的表面中。由于孔隙31，可能减小第一电极图案12与LED芯片14之间的安装力。然而，由于通过在第一铜层2上形成金属膜35而使孔隙31充满金属膜35，因而，第一电极图案12与LED芯片14之间的安装力可以通过金属膜35来得以增强。
图3A至图3C为用于描述形成图1的DCB衬底的金属膜的方法的剖视图。
在下文中，将参考图3A至图3C描述形成金属膜35的方法。
如图3A所示，通过第一铜层2的晶界，多个孔隙31可以形成在第一铜层2的表面中。
如图3B所示，金属膏33可以被涂敷在已经设置有孔隙31的第一铜层2的表面上。这里，金属膏33可以被涂敷在安装有LED芯片14的部分上以及与接合线17所接合的部分上。
如图3C所示，金属膏31依次被干燥、烧结以及压平。然后，填充孔隙31的金属膜35可以被设置在第一铜层2的表面上。
这里，用于防止铜被腐蚀的防腐层（未示出）可以被进一步设置在第一铜层2的未布置有金属膜35的表面上。
而且，LED芯片14可以包括电极焊盘15。电极焊盘15可以沿布置第二电极图案13的方向被布置在LED芯片14的顶面的预定区域中。
连续地，接合线17可以被分别接合至第二电极图案13和安装在第一电极图案12上的LED芯片14的电极焊盘15。因此，第二电极图案13和安装在第一电极图案12上的LED芯片14的电极焊盘15可以经由接合线17彼此电连接。接合线17可以由具有优良导电性的材料（例如，Au、Ag等）形成。
图4为示出图1中‘B’所示部分的放大的剖视图。
在第二电极图案13接合至接合线17的情况下，如图4所示，接合线17可以接合至布置在第二电极图案13上的金属膜35。
金属膜35被仅布置在接合线17所接合的部分上。因此，金属膜35能够提高第二电极图案13与接合线17之间的接合力。即，如图3A所示，通过第一铜层2的晶界，多个孔隙31可以布置在包括第二电极图案13的第一铜层2的表面中。由于孔隙31，可能减小第二电极图案13与接合线17之间的接合力。然而，由于孔隙31填充有金属膜35，因而，第二电极图案13与接合线17之间的接合力可以通过金属膜35来得以增强。由于形成金属膜35的方法与上述方法相同，因而将省略其详细说明。
磷光体16可以在LED芯片14上被布置为邻近电极焊盘15。这里，磷光体16可以包括至少一种磷光体。
磷光体16可以起到激励从LED芯片14发出的光的作用。例如，磷光体16可以包括基于硅酸盐的磷光体、基于硫化物的磷光体、基于YAG的磷光体、基于TAG的磷光体以及基于氮化物的磷光体的至少之一。
坝体18由绝缘材料制成。坝体18可以在DCB衬底11上被布置在第一电极图案12和第二电极图案13的外侧。坝体18可以形成为高于LED芯片14。坝体18可以具有各种形状。例如，坝体18可以具有半球形、半椭圆形、半圆形、四边形以及具有上削边的四边形中的任何一种形状。
封装层“S”可以被布置在第一电极图案12和第二电极图案13上方。即，封装层“S”可以被设置在由坝体18以及第一电极图案12和第二电极图案13形成的空间中。封装层“S”可以包括透光保护树脂。例如，封装层“S”可以包括硅树脂或环氧树脂，硅树脂或环氧树脂中的每一个均包括磷光体。
从LED芯片14产生的基准光可以向上传播。在邻近LED芯片14的表面的部分中，该基准光可以与被注入到封装层“S”中的磷光体吸收并被重新发出的辅助激励光混合。因此，基准光可以由白色来表示。这里，由于注入了磷光体的封装层“S”的形状引起颜色偏差以及颜色均匀度差异，因而封装层“S”可以形成为平坦的。
如上所述，由于根据第一实施例的发光器件包括DCB衬底11和安装在DCB衬底11上的LED芯片14，因而，LED芯片14被直接安装在DCB衬底11上，而不需要在衬底之外单独布置的电极图案以及布置在电极图案上的热沉层，使得能够减小发光器件的高度。
而且，在发光器件中，金属膜35被布置成填充孔隙31，该孔隙31已位于第一电极图案12的表面（其上安装有LED芯片14）中以及第二电极图案13的表面（连接至电极图案15的接合线17接合至该第二电极图案13）中。因此，可以提高第一电极图案12与LED芯片14之间的安装力，并且提高第二电极图案13与接合线17之间的接合力。
图5为根据第二实施例的发光器件的剖视图。
参照图5，根据第二实施例的发光器件可以包括DCB衬底11、LED芯片14、磷光体16、接合线17、坝体18以及防反射玻璃19。
由于衬底11、LED芯片14、接合线17以及坝体18的配置与前述第一实施例的相同，因而将省略其详细说明。而且，金属膜35与前述第一实施例相同，金属膜35形成为填充孔隙31，孔隙31已被设置在第一电极图案12的表面（其上安装有LED芯片14）中以及第二电极图案13的表面（连接至电极图案15的接合线17接合至该第二电极图案13）中。因此，也将省略其详细说明。
磷光体16可以在LED芯片14上被布置为邻近电极焊盘15。这里，磷光体16可以包括至少一种磷光体。
磷光体16可以起到激励从LED芯片14发出的光的作用。例如，磷光体16可以包括基于硅酸盐的磷光体、基于硫化物的磷光体、基于YAG的磷光体、基于TAG的磷光体以及基于氮化物的磷光体的至少之一。
根据LED芯片14，可以包括不同种类和数量的磷光体16。例如，当LED芯片14发出白光时，磷光体16可以包括绿色磷光体和红色磷光体。另外，当LED芯片14发出蓝光时，磷光体16可以包括绿色磷光体、黄色磷光体以及红色磷光体。
防反射玻璃19可以与DCB衬底11平行地布置在第一电极图案12和第二电极图案13上方以及坝体18上。防反射玻璃19可以与磷光体16间隔开。膜可以被用作防反射玻璃19。
防反射玻璃19的反射率小于树脂。因此，防反射玻璃19能够通过抑制光扩散来减小发光区域。例如，30个LED芯片14的发光面积可以为140mm2。
图6为示出图5中的LED芯片和透镜彼此耦接的发光器件的示意图。
如上所述，由于根据第二实施例的发光器件包括DCB衬底11和安装在DCB衬底11上的LED芯片14，因而发光器件可以不包括在衬底之外单独布置的电极图案以及布置在电极图案上的热沉层。因此，LED芯片14被直接安装在DCB衬底11上，使得能够减小发光器件的高度。
另外，发光器件包括布置在LED芯片14上的磷光体16，从而减小发光器件的面积并提高发光器件的亮度。
而且，发光器件包括防反射玻璃19，从而抑制光扩散并减小发光区域。
也就是说，参照图6和下表1，在发光器件与爱迪生（Edison）的比较中，高度从44.2mm减小到22mm，外径从87mm减小到60mm，有效直径从70mm减小到44mm以及视场角从60°减小到58°。这里，如图6所示，发光器件包括透镜。透镜的内表面的内径和外径分别是23.24mm和23.85mm。
爱迪生 实施例
COB的发光区域（㎜） 23 11.8
高度（㎜） 44.2 22
外径（㎜） 87 60
有效直径（㎜） 70 44
视场角（°） 60（中等角度） 58（中等角度）
光束角（°） 33
几何效率 96.4
表1
而且，发光器件使用Au作为衬底的金属层，从而抑制所发出的光褪色。因此，发光器件能够防止光通量的退化。即，由于发光器件包括布置在LED芯片14上的磷光体16以及布置为与磷光体16间隔开的防反射玻璃19，几乎没有光抵达第一电极图案12和第二电极图案13，因此，低反射率的Au能够被用作衬底的金属层。
而且，在发光器件中，金属膜35被布置成填充孔隙31，孔隙31已位于第一电极图案12的表面（其上安装有LED芯片14）中以及第二电极图案13的表面（连接至电极图案15的接合线17接合至第二电极图案13）中。因此，可以提高第一电极图案12与LED芯片14之间的安装力，并且提高第二电极图案13与接合线17之间的接合力。
本说明书中任何提及的“一个实施例”，“一实施例”，“示例性实施例”等等是指结合实施例所描述的具体的特征、结构或特性都包括在本发明至少之一实施例中。本说明书中多处出现的这些语句并不必然全部涉及相同的实施例。此外，当结合任一实施例来描述具体的特征、结构或特性时，应当认为其落入到本领域技术人员结合其他实施例来实施该特征、结构或特性的范围中内。
虽然已经参照其中的多个阐释性实施例来对实施例进行描述，但是应该理解的是，本领域普通技术人员可以设计出的多种改进和实施例在本公开文本的原理的精神或范围内。更具体而言，在公开内容、附图以及权利要求的范围中，可以在组成部件和/或组合排列布局上进行多种改进和变型。除了组成部件和/或布局上的多种改进和变型以外，对于本领域的技术人员，选择性的使用也是显而易见的。

Claims (15)

1.一种发光器件，包括：
直接铜接合(DCB)衬底，包括衬底主体和布置在所述衬底主体上的第一铜层，其中所述第一铜层包括第一电极和第二电极，所述第一电极和所述第二电极彼此隔离；
第一金属膜，布置在所述第一电极上并填充所述第一电极的表面的孔隙；
LED芯片，布置在所述第一金属膜上；以及
防腐层，布置在所述第一铜层的未布置有所述第一金属膜的表面上。
2.根据权利要求1所述的发光器件，其中，通过将金属膏涂敷到所述孔隙所在的表面上然后通过将所述金属膏干燥、烧结以及平坦化来布置所述第一金属膜。
3.根据权利要求1所述的发光器件，其中，所述第一金属膜包括Au和Ag中至少之一。
4.根据权利要求1至3中任一权利要求所述的发光器件，其中所述LED芯片和所述第一金属膜通过粘合剂彼此接合；
所述LED芯片包括电极焊盘；
所述发光器件还包括：
磷光层，激励从所述LED芯片发出的光并且布置在所述LED芯片上；以及
封装层，布置在所述磷光层和所述电极焊盘上。
5.根据权利要求4所述的发光器件，其中，所述粘合剂包括AuSn。
6.根据权利要求1至3中任一权利要求所述的发光器件，其中所述LED芯片包括电极焊盘，其中所述发光器件还包括第二金属膜以及接合线，所述第二金属膜布置在所述第二电极上并填充所述第二电极的表面的孔隙，所述接合线将所述LED芯片的电极焊盘与所述第二金属膜连接。
7.根据权利要求4所述的发光器件，其中，所述磷光体包括从由如下磷光体组成的组中选出的至少一种磷光体：基于硅酸盐的磷光体、基于硫化物的磷光体、基于YAG的磷光体、基于TAG的磷光体以及基于氮化物的磷光体。
8.根据权利要求1至3中任一权利要求所述的发光器件，其中，所述发光器件还包括布置在所述DCB衬底上的坝体，所述坝体是绝缘材料。
9.根据权利要求1至3中任一权利要求所述的发光器件，其中，所述发光器件还包括布置在所述DCB衬底上的坝体，所述坝体的高度大于所述LED芯片的高度。
10.根据权利要求4所述的发光器件，其中，所述封装层是透光保护树脂。
11.根据权利要求1至3中任一权利要求所述的发光器件，还包括：坝体，布置在所述DCB衬底上；以及防反射玻璃，布置在所述坝体上；
其中所述LED芯片包括电极焊盘；
所述防反射玻璃的反射率小于树脂的反射率；
所述发光器件还包括：
磷光层，激励从所述LED芯片发出的光并且布置在所述LED芯片上；以及
透镜，布置在所述防反射玻璃上；
在所述防反射玻璃和所述磷光层之间存在间隔。
12.根据权利要求11所述的发光器件，其中，所述防反射玻璃与所述衬底平行。
13.根据权利要求11所述的发光器件，所述防反射玻璃包括膜。
14.根据权利要求1所述的发光器件，其中，所述第二电极和安装在所述第一电极上的所述LED芯片彼此电连接。
15.根据权利要求1至3中任一权利要求所述的发光器件，其中，所述发光器件还包括布置在所述DCB衬底上的坝体，所述坝体具有半球形、半椭圆形、半圆形、四边形以及具有上削边的四边形中的任何一种形状。
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