CN101807657A - 发光器件封装和包括其的照明系统 - Google Patents

发光器件封装和包括其的照明系统 Download PDF

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CN101807657A
CN101807657A CN201010121536A CN201010121536A CN101807657A CN 101807657 A CN101807657 A CN 101807657A CN 201010121536 A CN201010121536 A CN 201010121536A CN 201010121536 A CN201010121536 A CN 201010121536A CN 101807657 A CN101807657 A CN 101807657A
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luminescent device
device encapsulation
encapsulation according
metal level
groove
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CN101807657B (zh
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宋镛先
曹京佑
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Suzhou Lekin Semiconductor Co Ltd
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LG Innotek Co Ltd
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Abstract

本发明提供一种发光器件封装和包括其的照明系统。发光器件封装包括具有沟槽的封装体、沟槽内的金属层和金属层上方的发光器件。

Description

发光器件封装和包括其的照明系统
技术领域
实施方案涉及一种发光器件封装和包括其的照明系统。
背景技术
发光二极管(LED)可构成利用化合物半导体材料例如GaAs基材料、AlGaAs基材料、GaN基材料、InGaN基材料和InGaAlP基材料的发光源。
发光器件广泛用于光学器件和高功率电子器件的领域。
这种发光器件被封装，因此用作发射各种颜色的光的发光设备。发光设备用作各个领域如照明显示、字符显示和图像显示中的光源。
发明内容
实施方案提供一种提高热发射效率的发光器件封装和包括其的照明系统。
在一个实施方案中，发光器件封装包括：具有沟槽的封装体；所述沟槽内的金属层；和所述金属层上方的发光器件。
在另一实施方案中，照明系统包括：发光模块，其包括发光器件封装，所述发光器件封装包括具有沟槽的封装体；所述沟槽内的金属层；和所述金属层上方的发光器件。
一个或更多个实施方案的细节在附图和以下说明中提出。从说明书和附图以及权利要求书，其他特征将变得明显。
附图说明
图1是根据一个实施方案的发光器件封装的截面图。
图2至5是示出根据一个实施方案的发光器件封装的制造工艺的视图。
图6是根据另一实施方案的发光器件封装的截面图。
图7是根据一个实施方案的照明单元的透视图。
图8是根据一个实施方案的背光单元的透视图。
具体实施方式
在下文，将参照附图描述根据一个实施方案的发光器件封装和包括其的照明系统。
在以下说明中，应当理解，当称层(或膜)在另一层或衬底之“上”时，它可以直接在另一层或衬底之上，或者也可以存在中间层。此外，应当理解，当称层在另一层之“下”时，它可以直接在另一层之下，或者也可以存在一个或更多个中间层。此外，还应理解，当称层在两个层“之间”时，它可以是所述两个层之间的唯一层，或者也可以存在一个或更多个中间层。
图1是根据一个实施方案的发光器件封装的截面图。
根据一个实施方案的发光器件封装可包括具有沟槽的封装体110、设置在沟槽中的金属层120、设置在金属层120上的粘合层150和设置在粘合层150上的发光器件160。
在一个实施方案中，发光器件可以是发光二极管(LED)，但是不限于此。
虽然在图1中示出的是水平型发光器件芯片，但是本公开不限于此。例如，实施方案可应用于垂直型发光器件芯片。
在一个实施方案中，发光器件封装可具有如下结构：在封装体110上执行各向异性湿法或干法蚀刻工艺以限定通孔，然后执行电镀工艺以填充通孔。
此时，可通过发光器件底表面边缘处限定的通孔供给电流以通过发光器件芯片下方限定的通孔发射热，由此提高热发射效率。
在根据一个实施方案的发光器件中，可增加具有高导热性的金属的百分比，并且可以在发光器件封装的底表面中设置窄且深的热扩散层以提高热发射效率。
此外，由于执行考虑衬底的晶体取向的各向异性湿蚀刻工艺来低成本地限定窄且深的沟槽，所以当利用电镀技术填充具有高导热性的金属时，可形成窄且深的热扩散层。
在下文，将参照图2至5描述发光器件的封装方法。
如图2所示，用于安装发光器件160的腔C可形成于封装体110中，但是不限于此。
封装体110可以是硅(Si)衬底，但是不限于此。封装体110可具有<110>取向。
在相关技术中，用于形成热发射通路的<100>Si晶圆具有<111>晶面和约54.7°的倾角。因此，当执行湿蚀刻工艺时，热发射通路具有其宽度朝向下方向逐渐变窄或变宽的形状。因此，存在难以形成窄且深的沟槽的局限性。
此外，可以执行除湿蚀刻工艺之外的各向异性干蚀刻工艺如反应离子蚀刻(RIE)工艺以形成多个窄且深的沟槽。然而，考虑到昂贵的制造成本和加工时间，难以将各向异性干蚀刻工艺应用于LED封装的制造工艺。
因此，在一个实施方案中，可使用其中<111>晶面与其垂直的<110>Si晶圆来利用各向异性湿蚀刻工艺(其为廉价的蚀刻工艺)形成窄且深的沟槽。
此后，如图2所示，可以在具有腔C的封装体110中形成多个第一沟槽。关于各第一沟槽T1的垂直截面，第一沟槽T1中的每一个可具有大于其水平宽度的垂直宽度。
多个第一沟槽T1可配置为形成用于发射热的金属层120。此时，阴极引线沟槽Tc和阳极引线沟槽Ta可与多个第一沟槽T1一起形成。
图3是其中在<110>Si晶圆上执行各向异性湿蚀刻工艺的情形的平面视图。
其中KOH可与水和异丙醇混合的溶液可用作用于形成沟槽的各向异性蚀刻溶液，但是不限于此。例如，可利用约23wt％的KOH、约13wt％的异丙醇和约63wt％的水进行蚀刻工艺，但是不限于此。
根据一个实施方案，设置在与(111)平面平行的方向上的蚀刻掩模(未显示)在封装体110上，例如<110>Si衬底封装体的底表面上图案化，以利用湿蚀刻工艺形成在垂直方向上限定的窄且深的第一沟槽T1。
根据一个实施方案，根据封装体110的晶体取向，考虑到蚀刻性质，可利用各向异性蚀刻工艺形成在垂直方向上限定的多个窄且深的第一沟槽T1。
在根据一个实施方案的发光器件封装及其制造方法中，具有高导热性的金属的百分比可增加，并且窄且深的热扩散层可置于发光器件封装的底表面中以提高热发射效率。
如图4所示，多个金属层120形成于多个第一沟槽T1中。例如，金属层120可利用电镀技术沉积在多个第一沟槽T1内以填充沟槽。
金属层120的每一层在垂直截面中可具有矩形棒形状。此时，可一起填充阴极引线沟槽Tc和阳极引线沟槽Ta以及金属层120以形成阴极引线130和阳极引线140。
由于执行考虑到衬底晶体取向的各向异性湿蚀刻工艺以用低成本限定窄且深的沟槽，所以，当利用电镀技术填充具有高导热性金属时可形成窄且深的热扩散层。
反射层180可形成于封装体110上，但是不限于此。反射层180可以是导电反射层180。例如，反射层180可包括包含Al、Ag的金属层或包含Al或Ag的合金的金属层。反射层180可配置为将阴极引线130与阳极引线140电隔离。
此后，可将粘合层150形成于反射层180上。
例如，发光器件160可利用聚合物粘合剂或镀覆的低共熔金属连接至封装体110。
此外，在需要高导热性的情况下，发光器件160可通过改善的利用Ag导电环氧树脂的锡焊接工艺或低共熔结合工艺连接到封装体110，但是不限于此。
如图5所示，在发光器件170上执行导线接合工艺。
例如，阴极引线130可连接至发光器件160的阴极电极(未显示)，阳极引线140可连接至发光器件160的阳极电极。
例如，导线170可包括金线、铜线和铝线中的一种或更多种导线。导线接合工艺可包括球式导线接合或边缘导线接合。
在图5中，当发光器件160为垂直型发光器件160时，发光器件电连接至金属层。然而，发光器件160可不电连接至金属层120。
当发光器件160为垂直型发光器件160时，粘合层150可具有导电性，并且可只使用一根导线。
此外，当发光器件160为垂直型发光器件160时，金属层120可用作电极层。此外，金属层120可电连接至发光器件160。在该情况下，可不形成单独的阴极引线和阳极引线。
当使用倒装芯片接合技术接合发光器件160时，不需要导线。此外，发光器件160的电极可电连接至阴极引线130和阳极引线140。
图6是根据另一实施方案的发光器件封装的截面图。
根据另一实施方案的图6的发光器件封装可采用根据一个实施方案的发光器件的技术特性。
根据另一实施方案的发光器件封装可包括设置在发光器件160两侧的封装体110上的屏障物180和设置在发光器件160上的密封物190。
在一个实施方案中，当形成密封物190时，可形成至少一个屏障物180可。屏障物180可帮助形成密封物190以及防止密封物190的剥离现象。屏障物180可包括氧化物层或氮化物层，但是不限于此。
密封物190可包括磷光体(未显示)。例如，密封物190的密封方法可包括分散法、浇注法、传递模塑法和真空印刷法。
此外，蓝色发光器件可使用黄色磷光体例如钇铝石榴石(YAG)和铽铝石榴石(TAG)作为磷光体，或者UV发光器件可使用(红/绿/蓝)三色磷光体作为磷光体，但是不限于此。
在根据另一实施方案的图6发光器件封装中，密封物190可具有由包括电介质的屏障物180限定的圆顶形状，但不限于此。
根据该实施方案的发光器件封装及其制造方法，在晶圆级封装中，具有高导热性的金属的百分比可增加，并且窄且深的热扩散层可设置在发光器件封装的底表面中以提高热发射效率。
此外，由于执行考虑衬底的晶体取向的各向异性湿蚀刻工艺以用低成本限定窄且深的沟槽，所以当利用电镀技术填充具有高导热性的金属时，可形成窄且深的热扩散层。
根据一个实施方案的发光器件封装可应用于照明系统。照明系统可包括图7中示出的照明单元、图8中示出的背光单元、交通灯、车辆头灯和招牌。
图7是根据一个实施方案的照明单元的透视图。
参照图7，照明单元1100可包括壳体1110、设置在壳体1110中的发光模块1130和设置在壳体1110中以从外部电源接收电力的连接端子1120。
壳体1110可由具有改进的热耗散特性的材料形成。例如，壳体1110可由金属材料或树脂材料形成。
发光模块1130可包括衬底1132和安装在衬底1132上的至少一个发光器件封装1210。
电路图案可印刷在绝缘材料上以形成衬底1132。例如，衬底1132可包括印刷电路板(PCB)、金属芯PCB、柔性PCB或陶瓷PCB。
此外，衬底1132可由能有效反射光的材料形成。衬底1132的表面可涂有彩色材料，例如白色或银色材料，光通过其有效地反射。
至少一个发光器件封装1210可安装在衬底1132上。发光器件封装1210可包括至少一个发光二极管(LED)100。LED 100可包括发射红、绿、蓝或白光的彩色LED和发射紫外(UV)光的UV LED。
发光模块1130可包括多个发光器件封装1210以获得各种颜色和亮度。例如，白色LED、红色LED和绿色LED可相互组合设置以确保高显色指数(CRI)。
连接端子1120可电连接至发光模块1130以供电。如图7所示，尽管连接端子1120以插座方式螺旋插入外部电源中，但是本公开不限于此。例如，连接端子1120可具有销形状。因此，连接端子1120可插入外部电源中或利用互连连接至外部电源。
图8是根据一个实施方案的背光单元的透视图。
根据一个实施方案的背光单元1200可包括导光板1210、发光模块1240、反射构件1220和底盖1230，但是不限于此。发光模块1240可接触导光板1210的至少一个表面以为导光板1210提供光，但是不限于此。反射构件1220可设置在导光板1210下方。底盖1230可容纳导光板1210、发光模块1240和反射构件1220。
导光板1210可扩散光以产生平面光。导光板1210可由透明材料形成。例如，导光板1210可由丙烯酸树脂基材料例如聚甲基丙烯酸甲酯(PMMA)、聚对苯二甲酸乙二醇酯(PET)树脂、聚碳酸酯(PC)树脂、环烯烃共聚物(COC)树脂和聚萘二甲酸乙二醇酯(PEN)树脂中的一种形成。
发光模块1240可向导光板1210的至少一个表面提供光。因此，发光模块1240可用作包括背光单元的显示设备的光源。
发光模块1240可接触导光板1210，但是不限于此。
特别地，发光模块1240可包括衬底1242和安装在衬底1242上的多个发光器件封装200。衬底1242可接触导光板1210，但是不限于此。
衬底1242可以是包括电路图案(未显示)的PCB。然而，衬底1242可包括金属芯PCB或柔性PCB以及PCB，但是不限于此。
多个发光器件封装200可安装在衬底1242上。此外，每个发光器件封装200的发光表面可与导光板1210间隔预定距离。
反射构件1220可设置在导光板1210下方。反射构件1220反射入射到导光板1210底表面上的光以在向上的方向上前进，由此提高背光单元的亮度。例如，反射构件1220可由PET、PC和PVC之一形成，但是不限于此。
底盖1230可容纳导光板1210、发光模块1240和反射构件1220。为此，底盖1230可具有上端开放的盒状，但是不限于此。
底盖1230可由金属材料或树脂材料形成。此外，底盖1230可利用压制成型工艺或挤塑工艺制造。
该说明书中提及的“一个实施方案”、“实施方案”、“示例性实施方案”等是指关于实施方案所描述的具体特征、结构或特征包含在本发明的至少一个实施方案中。说明书中各处使用的这类短语不一定都是指相同的实施方案。此外，当关于任意实施方案描述具体特征、结构或特征时，关于实施方案的其它特征、结构或特性来实现该特征、结构或特性也在本领域技术人员的范围内。
虽然已经参照本发明的多个示例性实施方案描述本发明，但是应理解，本领域的技术人员可以设计多种其它修改方案和实施方案，它们也在本公开内容的原理的精神和范围内。更具体地，可以对本公开内容、附图和所附权利要求中的主题组合布置的组成部件和/或布置进行各种变化和修改。除了对组成部件和/或布置进行变化和修改之外，可替代使用对本领域的技术人员而言也是明显的。

Claims (15)

1.一种发光器件封装，其包括：
具有沟槽的封装体；
所述沟槽内的金属层；和
所述金属层上方的发光器件。
2.根据权利要求1所述的发光器件封装，其中所述沟槽包括恒定的垂直截面面积。
3.根据权利要求1所述的发光器件封装，其中所述沟槽包括矩形截面。
4.根据权利要求1所述的发光器件封装，其中所述沟槽包括比其水平宽度大的垂直宽度。
5.根据权利要求1所述的发光器件封装，其中所述金属层包括矩形棒形状的垂直截面。
6.根据权利要求1所述的发光器件封装，其中所述金属层与所述发光器件电隔离。
7.根据权利要求1所述的发光器件封装，其中所述金属层电连接至所述发光器件。
8.根据权利要求1所述的发光器件封装，其中所述封装体包括具有<110>取向的硅衬底。
9.根据权利要求8所述的发光器件封装，其中所述沟槽包括设置在与所述封装体底表面的(111)平面方向平行的方向上的多个沟槽。
10.根据权利要求1所述的发光器件封装，其包括所述金属层上方的粘合层。
11.根据权利要求10所述的发光器件封装，其中所述发光器件连接至所述粘合层。
12.根据权利要求1所述的发光器件封装，其中所述封装体还包括腔和所述腔内的反射层。
13.根据权利要求12所述的发光器件封装，其中所述反射层包括导电性。
14.根据权利要求1所述的发光器件封装，其包括：
所述发光器件侧封装体上的至少一个屏障物；和
所述发光器件上方的模制构件。
15.一种照明系统，其包括：
包括发光器件封装的发光模块，其中所述发光器件封装为权利要求1至14之一所述的发光器件封装。
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102637784A (zh) * 2011-02-11 2012-08-15 台湾积体电路制造股份有限公司 发光二极管封装基板及其制作方法
CN103178182A (zh) * 2011-12-20 2013-06-26 新世纪光电股份有限公司 发光二极管元件以及覆晶式发光二极管封装元件
CN103280508A (zh) * 2013-05-24 2013-09-04 江阴长电先进封装有限公司 一种晶圆级led封装方法
CN103996783A (zh) * 2013-02-18 2014-08-20 三星电子株式会社 发光器件封装件

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100999692B1 (ko) * 2010-02-18 2010-12-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
JP2012204370A (ja) * 2011-03-23 2012-10-22 Sony Corp 光源回路ユニットおよび照明装置、並びに表示装置
JP2013004815A (ja) 2011-06-17 2013-01-07 Sony Corp 光源回路ユニットおよび照明装置、並びに表示装置
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CN102403418A (zh) * 2011-11-09 2012-04-04 东莞勤上光电股份有限公司 一种大功率led的散热结构的制作方法
TW201324863A (zh) * 2011-12-13 2013-06-16 Genesis Photonics Inc 發光二極體元件以及覆晶式發光二極體封裝元件
TWI550920B (zh) * 2012-12-13 2016-09-21 鴻海精密工業股份有限公司 發光二極體
TWI552386B (zh) 2013-12-20 2016-10-01 新世紀光電股份有限公司 半導體發光結構及半導體封裝結構
JP7201616B2 (ja) * 2017-12-22 2023-01-10 東海カーボン株式会社 リチウムイオン二次電池用負極材の製造方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6531328B1 (en) * 2001-10-11 2003-03-11 Solidlite Corporation Packaging of light-emitting diode
US20060220036A1 (en) * 2005-03-30 2006-10-05 Samsung Electro-Mechanics Co., Ltd. LED package using Si substrate and fabricating method thereof
US20070008101A1 (en) * 2003-02-21 2007-01-11 Sensormatic Electronics Corporation Integrated electronic article surveillance (EAS) and point of sale (POS) system and method
US20070096129A1 (en) * 2005-10-27 2007-05-03 Lg Innotek Co., Ltd Light emitting diode package and method of manufacturing the same
US20070235739A1 (en) * 2006-03-31 2007-10-11 Edison Opto Corporation Structure of heat dissipation of implant type light emitting diode package and method for manufacturing the same
EP1848044A2 (en) * 2006-04-19 2007-10-24 Shinko Electric Industries Co., Ltd. Semiconductor device and seconductor device fabrication method
US20080043444A1 (en) * 2004-04-27 2008-02-21 Kyocera Corporation Wiring Board for Light-Emitting Element
WO2008123765A1 (en) * 2007-04-05 2008-10-16 Kia Kuang Tan Solid state light source mounted directly on aluminum substrate for better thermal performance and method of manufacturing the same
EP2023699A2 (en) * 2007-08-10 2009-02-11 Shinko Electric Industries Co., Ltd. Heat radiation package and semiconductor device

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5506755A (en) * 1992-03-11 1996-04-09 Kabushiki Kaisha Toshiba Multi-layer substrate
KR100305686B1 (ko) 1997-09-29 2001-10-19 신현준 단결정 선구조의 soi웨이퍼 및 그 제조방법
EP1387412B1 (en) * 2001-04-12 2009-03-11 Matsushita Electric Works, Ltd. Light source device using led, and method of producing same
US20030012925A1 (en) * 2001-07-16 2003-01-16 Motorola, Inc. Process for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate for materials used to form the same and including an etch stop layer used for back side processing
JP4305896B2 (ja) * 2002-11-15 2009-07-29 シチズン電子株式会社 高輝度発光装置及びその製造方法
US20040188696A1 (en) * 2003-03-28 2004-09-30 Gelcore, Llc LED power package
EP1693904B1 (en) * 2005-02-18 2020-03-25 Nichia Corporation Light emitting device provided with lens for controlling light distribution characteristic
KR100593935B1 (ko) * 2005-03-24 2006-06-30 삼성전기주식회사 발광 다이오드 패키지 및 그 제조 방법
TWI294694B (en) * 2005-06-14 2008-03-11 Ind Tech Res Inst Led wafer-level chip scale packaging
KR100610650B1 (ko) 2005-06-17 2006-08-09 (주) 파이오닉스 엘이디 패키지 및 그 제조방법
US7550319B2 (en) * 2005-09-01 2009-06-23 E. I. Du Pont De Nemours And Company Low temperature co-fired ceramic (LTCC) tape compositions, light emitting diode (LED) modules, lighting devices and method of forming thereof
KR101241650B1 (ko) * 2005-10-19 2013-03-08 엘지이노텍 주식회사 엘이디 패키지
US7719099B2 (en) * 2005-10-21 2010-05-18 Advanced Optoelectronic Technology Inc. Package structure for solid-state lighting devices and method of fabricating the same
KR100719072B1 (ko) * 2005-10-28 2007-05-16 (주) 아모센스 엘이디 패키지의 세라믹의 경사면 형성 방법
JP4828248B2 (ja) * 2006-02-16 2011-11-30 新光電気工業株式会社 発光装置及びその製造方法
US20070228386A1 (en) * 2006-03-30 2007-10-04 Jin-Shown Shie Wire-bonding free packaging structure of light emitted diode
KR100828900B1 (ko) * 2006-09-04 2008-05-09 엘지이노텍 주식회사 발광 다이오드 패키지 및 그 제조방법
US7808013B2 (en) * 2006-10-31 2010-10-05 Cree, Inc. Integrated heat spreaders for light emitting devices (LEDs) and related assemblies
JP4920497B2 (ja) * 2007-05-29 2012-04-18 株式会社東芝 光半導体装置
TW200921942A (en) * 2007-11-14 2009-05-16 Advanced Optoelectronic Tech Packaging structure of light emitting diode device and method of fabricating the same
US20090273002A1 (en) * 2008-05-05 2009-11-05 Wen-Chih Chiou LED Package Structure and Fabrication Method
JP5345363B2 (ja) * 2008-06-24 2013-11-20 シャープ株式会社 発光装置
CN101740678A (zh) * 2008-11-10 2010-06-16 富士迈半导体精密工业（上海）有限公司 固态发光元件及光源模组
US20100181582A1 (en) * 2009-01-22 2010-07-22 Intematix Corporation Light emitting devices with phosphor wavelength conversion and methods of manufacture thereof

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6531328B1 (en) * 2001-10-11 2003-03-11 Solidlite Corporation Packaging of light-emitting diode
US20070008101A1 (en) * 2003-02-21 2007-01-11 Sensormatic Electronics Corporation Integrated electronic article surveillance (EAS) and point of sale (POS) system and method
US20080043444A1 (en) * 2004-04-27 2008-02-21 Kyocera Corporation Wiring Board for Light-Emitting Element
US20060220036A1 (en) * 2005-03-30 2006-10-05 Samsung Electro-Mechanics Co., Ltd. LED package using Si substrate and fabricating method thereof
US20070096129A1 (en) * 2005-10-27 2007-05-03 Lg Innotek Co., Ltd Light emitting diode package and method of manufacturing the same
US20070235739A1 (en) * 2006-03-31 2007-10-11 Edison Opto Corporation Structure of heat dissipation of implant type light emitting diode package and method for manufacturing the same
EP1848044A2 (en) * 2006-04-19 2007-10-24 Shinko Electric Industries Co., Ltd. Semiconductor device and seconductor device fabrication method
WO2008123765A1 (en) * 2007-04-05 2008-10-16 Kia Kuang Tan Solid state light source mounted directly on aluminum substrate for better thermal performance and method of manufacturing the same
EP2023699A2 (en) * 2007-08-10 2009-02-11 Shinko Electric Industries Co., Ltd. Heat radiation package and semiconductor device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102637784A (zh) * 2011-02-11 2012-08-15 台湾积体电路制造股份有限公司 发光二极管封装基板及其制作方法
CN102637784B (zh) * 2011-02-11 2015-11-25 台湾积体电路制造股份有限公司 发光二极管封装基板及其制作方法
CN103178182A (zh) * 2011-12-20 2013-06-26 新世纪光电股份有限公司 发光二极管元件以及覆晶式发光二极管封装元件
CN103178182B (zh) * 2011-12-20 2016-02-03 新世纪光电股份有限公司 发光二极管元件以及覆晶式发光二极管封装元件
CN105449072A (zh) * 2011-12-20 2016-03-30 新世纪光电股份有限公司 发光二极管元件
CN103996783A (zh) * 2013-02-18 2014-08-20 三星电子株式会社 发光器件封装件
CN103280508A (zh) * 2013-05-24 2013-09-04 江阴长电先进封装有限公司 一种晶圆级led封装方法
CN103280508B (zh) * 2013-05-24 2015-12-23 江阴长电先进封装有限公司 一种晶圆级led封装方法

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US20100207154A1 (en) 2010-08-19
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