WO2008139752A1 - 発光素子及びその製造方法 - Google Patents

発光素子及びその製造方法 Download PDF

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Publication number
WO2008139752A1
WO2008139752A1 PCT/JP2008/051397 JP2008051397W WO2008139752A1 WO 2008139752 A1 WO2008139752 A1 WO 2008139752A1 JP 2008051397 W JP2008051397 W JP 2008051397W WO 2008139752 A1 WO2008139752 A1 WO 2008139752A1
Authority
WO
WIPO (PCT)
Prior art keywords
package
radiation
led chips
exposed
emission colors
Prior art date
Application number
PCT/JP2008/051397
Other languages
English (en)
French (fr)
Inventor
Takahiro Ayabe
Toshihiro Ishii
Shinichi Nakajima
Naoki Ishimi
Original Assignee
Omron Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omron Corporation filed Critical Omron Corporation
Publication of WO2008139752A1 publication Critical patent/WO2008139752A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

放熱パッド３８とリード端子３４を交互に配列し、各放熱パッド３８の上に赤、緑、青のいずれかの発光色のＬＥＤチップ３６Ｒ、３６Ｇ、３６Ｂを実装し、各ＬＥＤチップをボンディングワイヤ３９によってリード端子３４に電気的に接続する。放熱パッド３８とリード端子３４には白色樹脂からなるパッケージ４３が成形され、ＬＥＤチップはパッケージ４３の内部に露出し、放熱パッド３８はパッケージ４３の裏面に露出する。各発光色のＬＥＤチップ３６Ｒ、３６Ｇ、３６Ｂは、連続的に形成された透明な封止樹脂３７内に封止されており、パッケージ４３の上面に配置された導光プレート４５と封止樹脂３７の間には空気層が介在している。ＬＥＤチップで発生した熱は、外部の放熱性の良好な部分へ直接に放熱される。
PCT/JP2008/051397 2007-05-09 2008-01-30 発光素子及びその製造方法 WO2008139752A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-124963 2007-05-09
JP2007124963A JP2008282932A (ja) 2007-05-09 2007-05-09 発光素子及びその製造方法

Publications (1)

Publication Number Publication Date
WO2008139752A1 true WO2008139752A1 (ja) 2008-11-20

Family

ID=40001976

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/051397 WO2008139752A1 (ja) 2007-05-09 2008-01-30 発光素子及びその製造方法

Country Status (2)

Country Link
JP (1) JP2008282932A (ja)
WO (1) WO2008139752A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010150445A1 (ja) * 2009-06-25 2010-12-29 シャープ株式会社 表示装置
JP2012146794A (ja) * 2011-01-11 2012-08-02 Kyocera Connector Products Corp 半導体発光素子取付用モジュール、及び、半導体発光素子モジュール

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010129923A (ja) * 2008-11-28 2010-06-10 Showa Denko Kk 発光部材、発光装置、照明装置、バックライト装置および発光部材の製造方法
JP2010129834A (ja) * 2008-11-28 2010-06-10 Sanyo Electric Co Ltd 光半導体装置およびその実装構造
EP2346100B1 (en) * 2010-01-15 2019-05-22 LG Innotek Co., Ltd. Light emitting apparatus and lighting system
KR101693656B1 (ko) * 2010-04-07 2017-01-06 엘지전자 주식회사 백라이트 유닛 및 이를 포함하는 디스플레이 장치
KR101114719B1 (ko) * 2010-08-09 2012-02-29 엘지이노텍 주식회사 발광 소자 및 이를 구비한 조명 시스템
JP5450559B2 (ja) 2010-11-25 2014-03-26 シャープ株式会社 植物栽培用ｌｅｄ光源、植物工場及び発光装置
CN202056570U (zh) * 2011-01-20 2011-11-30 木林森股份有限公司 一种带透镜的表面贴装式发光二极管
TWI431218B (zh) * 2011-03-11 2014-03-21 Lingsen Precision Ind Ltd The manufacturing method and structure of LED light bar
DE102011056700A1 (de) 2011-12-20 2013-06-20 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von optoelektronischen Halbleiterbauteilen, Leiterrahmenverbund und optoelektronisches Halbleiterbauteil
JP6104527B2 (ja) * 2012-06-29 2017-03-29 シャープ株式会社 発光装置
TWI540769B (zh) * 2013-05-27 2016-07-01 億光電子工業股份有限公司 承載結構及發光裝置
DE102013110355A1 (de) 2013-09-19 2015-03-19 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zum Herstellen eines Leiterrahmenverbunds
US10036546B2 (en) * 2015-11-18 2018-07-31 Koito Manufacturing Co., Ltd. Lamp and manufacturing method thereof
JP2017098212A (ja) * 2015-11-18 2017-06-01 株式会社小糸製作所 灯具及びその製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007095797A (ja) * 2005-09-27 2007-04-12 Nippon Leiz Co Ltd 光源装置
JP2007095796A (ja) * 2005-09-27 2007-04-12 Nippon Leiz Co Ltd 光源装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007095797A (ja) * 2005-09-27 2007-04-12 Nippon Leiz Co Ltd 光源装置
JP2007095796A (ja) * 2005-09-27 2007-04-12 Nippon Leiz Co Ltd 光源装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010150445A1 (ja) * 2009-06-25 2010-12-29 シャープ株式会社 表示装置
JP2012146794A (ja) * 2011-01-11 2012-08-02 Kyocera Connector Products Corp 半導体発光素子取付用モジュール、及び、半導体発光素子モジュール

Also Published As

Publication number Publication date
JP2008282932A (ja) 2008-11-20

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