JP2009094183A - 疎水化多孔質膜の製造方法 - Google Patents

疎水化多孔質膜の製造方法 Download PDF

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Publication number
JP2009094183A
JP2009094183A JP2007261620A JP2007261620A JP2009094183A JP 2009094183 A JP2009094183 A JP 2009094183A JP 2007261620 A JP2007261620 A JP 2007261620A JP 2007261620 A JP2007261620 A JP 2007261620A JP 2009094183 A JP2009094183 A JP 2009094183A
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Japan
Prior art keywords
gas
temperature
substrate
porous membrane
mixed gas
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Application number
JP2007261620A
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English (en)
Japanese (ja)
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JP2009094183A5 (enExample
Inventor
Shinichi Tonari
真一 隣
Takahiro Nakayama
高博 中山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Ulvac Inc
Original Assignee
NEC Electronics Corp
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Electronics Corp, Ulvac Inc filed Critical NEC Electronics Corp
Priority to JP2007261620A priority Critical patent/JP2009094183A/ja
Priority to EP08836263A priority patent/EP2197024A4/en
Priority to US12/680,275 priority patent/US8273410B2/en
Priority to KR1020107005825A priority patent/KR101125171B1/ko
Priority to PCT/JP2008/002714 priority patent/WO2009044529A1/ja
Priority to CN200880110373A priority patent/CN101821838A/zh
Priority to TW097137911A priority patent/TW200929359A/zh
Publication of JP2009094183A publication Critical patent/JP2009094183A/ja
Publication of JP2009094183A5 publication Critical patent/JP2009094183A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02359—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment to change the surface groups of the insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31058—After-treatment of organic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Compounds (AREA)
JP2007261620A 2007-10-05 2007-10-05 疎水化多孔質膜の製造方法 Pending JP2009094183A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2007261620A JP2009094183A (ja) 2007-10-05 2007-10-05 疎水化多孔質膜の製造方法
EP08836263A EP2197024A4 (en) 2007-10-05 2008-09-29 METHOD FOR PRODUCING A WATER-RESISTANT POROUS FILM
US12/680,275 US8273410B2 (en) 2007-10-05 2008-09-29 Process for manufacturing hydrophobized microporous film
KR1020107005825A KR101125171B1 (ko) 2007-10-05 2008-09-29 소수화 다공질막의 제조방법
PCT/JP2008/002714 WO2009044529A1 (ja) 2007-10-05 2008-09-29 疎水化多孔質膜の製造方法
CN200880110373A CN101821838A (zh) 2007-10-05 2008-09-29 制造疏水化多孔膜的方法
TW097137911A TW200929359A (en) 2007-10-05 2008-10-02 Method for manufacturing hydrophobized porous membrane

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007261620A JP2009094183A (ja) 2007-10-05 2007-10-05 疎水化多孔質膜の製造方法

Publications (2)

Publication Number Publication Date
JP2009094183A true JP2009094183A (ja) 2009-04-30
JP2009094183A5 JP2009094183A5 (enExample) 2010-07-08

Family

ID=40525961

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JP2007261620A Pending JP2009094183A (ja) 2007-10-05 2007-10-05 疎水化多孔質膜の製造方法

Country Status (7)

Country Link
US (1) US8273410B2 (enExample)
EP (1) EP2197024A4 (enExample)
JP (1) JP2009094183A (enExample)
KR (1) KR101125171B1 (enExample)
CN (1) CN101821838A (enExample)
TW (1) TW200929359A (enExample)
WO (1) WO2009044529A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010225913A (ja) * 2009-03-24 2010-10-07 Renesas Electronics Corp 半導体装置の製造方法
JP2013519217A (ja) * 2010-02-01 2013-05-23 ラム リサーチ コーポレーション 高アスペクト比ナノ構造におけるパターン崩壊の低減方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI461302B (zh) * 2012-09-14 2014-11-21 Univ Nat Taiwan Normal A hydrophobic layer, a method of making the same, a method for producing a hydrophobic layer, and a mold
CN109962026B (zh) * 2017-12-26 2022-04-19 无锡华润上华科技有限公司 一种晶圆的预处理方法及光刻方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999003926A1 (en) * 1997-07-15 1999-01-28 Asahi Kasei Kogyo Kabushiki Kaisha Alkoxysilane/organic polymer composition for thin insulating film production and use thereof
JP2002033314A (ja) * 2000-02-10 2002-01-31 Applied Materials Inc Ｐｅｃｖｄキャッピングモジュールを含む低誘電率誘電体処理のための方法及び一体型装置
JP2005166716A (ja) * 2003-11-28 2005-06-23 Tokyo Electron Ltd 絶縁膜の形成方法及び絶縁膜形成システム
JP2005236285A (ja) * 2004-02-19 2005-09-02 Internatl Business Mach Corp <Ibm> 改良された信頼性を有する超低誘電率（ｋ）誘電体を集積化する構造および方法
JP2005272188A (ja) * 2004-03-23 2005-10-06 Mitsui Chemicals Inc 疎水化多孔質シリカの製造方法、疎水化多孔質シリカおよび疎水化多孔質シリカ薄膜
JP2007002812A (ja) * 2005-06-27 2007-01-11 Denso Corp エンジン始動制御装置
JP2007508691A (ja) * 2003-10-08 2007-04-05 ハネウェル・インターナショナル・インコーポレーテッド シリル化剤を用いる低誘電率誘電材料の損傷の修復

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0261620A (ja) 1988-08-29 1990-03-01 Hitachi Ltd 液晶表示装置
JPH027A (ja) 1989-01-04 1990-01-05 Fuji Photo Film Co Ltd カメラの測距装置
US6448331B1 (en) 1997-07-15 2002-09-10 Asahi Kasei Kabushiki Kaisha Alkoxysilane/organic polymer composition for thin insulating film production and use thereof
US6395651B1 (en) 1998-07-07 2002-05-28 Alliedsignal Simplified process for producing nanoporous silica
TWI273090B (en) 2002-09-09 2007-02-11 Mitsui Chemicals Inc Method for modifying porous film, modified porous film and use of same
US20040096586A1 (en) * 2002-11-15 2004-05-20 Schulberg Michelle T. System for deposition of mesoporous materials
CN1823406B (zh) * 2003-07-17 2011-04-20 日商乐华股份有限公司 低介电常数膜及其制造方法、以及使用它的电子器件
JP4623520B2 (ja) * 2006-04-10 2011-02-02 株式会社神戸製鋼所 多孔質膜の製造方法及びその方法によって製造された多孔質膜
JP5303954B2 (ja) * 2008-02-15 2013-10-02 東京エレクトロン株式会社 疎水化処理方法、疎水化処理装置、塗布、現像装置及び記憶媒体

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999003926A1 (en) * 1997-07-15 1999-01-28 Asahi Kasei Kogyo Kabushiki Kaisha Alkoxysilane/organic polymer composition for thin insulating film production and use thereof
JP2002033314A (ja) * 2000-02-10 2002-01-31 Applied Materials Inc Ｐｅｃｖｄキャッピングモジュールを含む低誘電率誘電体処理のための方法及び一体型装置
JP2007508691A (ja) * 2003-10-08 2007-04-05 ハネウェル・インターナショナル・インコーポレーテッド シリル化剤を用いる低誘電率誘電材料の損傷の修復
JP2005166716A (ja) * 2003-11-28 2005-06-23 Tokyo Electron Ltd 絶縁膜の形成方法及び絶縁膜形成システム
JP2005236285A (ja) * 2004-02-19 2005-09-02 Internatl Business Mach Corp <Ibm> 改良された信頼性を有する超低誘電率（ｋ）誘電体を集積化する構造および方法
JP2005272188A (ja) * 2004-03-23 2005-10-06 Mitsui Chemicals Inc 疎水化多孔質シリカの製造方法、疎水化多孔質シリカおよび疎水化多孔質シリカ薄膜
JP2007002812A (ja) * 2005-06-27 2007-01-11 Denso Corp エンジン始動制御装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010225913A (ja) * 2009-03-24 2010-10-07 Renesas Electronics Corp 半導体装置の製造方法
JP2013519217A (ja) * 2010-02-01 2013-05-23 ラム リサーチ コーポレーション 高アスペクト比ナノ構造におけるパターン崩壊の低減方法

Also Published As

Publication number Publication date
US20100221433A1 (en) 2010-09-02
US8273410B2 (en) 2012-09-25
EP2197024A4 (en) 2010-09-29
TW200929359A (en) 2009-07-01
KR20100046259A (ko) 2010-05-06
EP2197024A1 (en) 2010-06-16
WO2009044529A1 (ja) 2009-04-09
KR101125171B1 (ko) 2012-03-20
CN101821838A (zh) 2010-09-01

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