WO2009044529A1 - 疎水化多孔質膜の製造方法 - Google Patents

疎水化多孔質膜の製造方法 Download PDF

Info

Publication number
WO2009044529A1
WO2009044529A1 PCT/JP2008/002714 JP2008002714W WO2009044529A1 WO 2009044529 A1 WO2009044529 A1 WO 2009044529A1 JP 2008002714 W JP2008002714 W JP 2008002714W WO 2009044529 A1 WO2009044529 A1 WO 2009044529A1
Authority
WO
WIPO (PCT)
Prior art keywords
hydrophobilized
insulating film
organic silica
substrate
silica insulating
Prior art date
Application number
PCT/JP2008/002714
Other languages
English (en)
French (fr)
Inventor
Shinichi Chikaki
Takahiro Nakayama
Original Assignee
Nec Electronics Corporation
Ulvac Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Electronics Corporation, Ulvac Inc. filed Critical Nec Electronics Corporation
Priority to KR1020107005825A priority Critical patent/KR101125171B1/ko
Priority to EP08836263A priority patent/EP2197024A4/en
Priority to CN200880110373A priority patent/CN101821838A/zh
Priority to US12/680,275 priority patent/US8273410B2/en
Publication of WO2009044529A1 publication Critical patent/WO2009044529A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02359—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment to change the surface groups of the insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31058—After-treatment of organic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31695—Deposition of porous oxides or porous glassy oxides or oxide based porous glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Silicon Compounds (AREA)

Abstract

　 基板１上に有機シリカ絶縁膜２を形成する工程と、有機シリカ絶縁膜２が形成された基板１が配置された装置内で基板１の温度をシリル化ガスの露点温度以上気化温度以下として、装置内へシリル化ガスと不活性ガスとからなる混合ガス３を導入する工程と、装置内への混合ガス３の導入を停止する工程と、有機シリカ絶縁膜２が形成された基板１を加熱する工程と、を含むことによって、有機シリカ絶縁膜２の表面および細孔の表面が疎水化され、比誘電率の上昇が抑制された疎水化有機シリカ絶縁膜を得ることができる。
PCT/JP2008/002714 2007-10-05 2008-09-29 疎水化多孔質膜の製造方法 WO2009044529A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020107005825A KR101125171B1 (ko) 2007-10-05 2008-09-29 소수화 다공질막의 제조방법
EP08836263A EP2197024A4 (en) 2007-10-05 2008-09-29 METHOD FOR PRODUCING A WATER-RESISTANT POROUS FILM
CN200880110373A CN101821838A (zh) 2007-10-05 2008-09-29 制造疏水化多孔膜的方法
US12/680,275 US8273410B2 (en) 2007-10-05 2008-09-29 Process for manufacturing hydrophobized microporous film

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-261620 2007-10-05
JP2007261620A JP2009094183A (ja) 2007-10-05 2007-10-05 疎水化多孔質膜の製造方法

Publications (1)

Publication Number Publication Date
WO2009044529A1 true WO2009044529A1 (ja) 2009-04-09

Family

ID=40525961

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/002714 WO2009044529A1 (ja) 2007-10-05 2008-09-29 疎水化多孔質膜の製造方法

Country Status (7)

Country Link
US (1) US8273410B2 (ja)
EP (1) EP2197024A4 (ja)
JP (1) JP2009094183A (ja)
KR (1) KR101125171B1 (ja)
CN (1) CN101821838A (ja)
TW (1) TW200929359A (ja)
WO (1) WO2009044529A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5582710B2 (ja) * 2009-03-24 2014-09-03 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US8617993B2 (en) * 2010-02-01 2013-12-31 Lam Research Corporation Method of reducing pattern collapse in high aspect ratio nanostructures
TWI461302B (zh) * 2012-09-14 2014-11-21 Univ Nat Taiwan Normal A hydrophobic layer, a method of making the same, a method for producing a hydrophobic layer, and a mold
CN109962026B (zh) * 2017-12-26 2022-04-19 无锡华润上华科技有限公司 一种晶圆的预处理方法及光刻方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH027A (ja) 1989-01-04 1990-01-05 Fuji Photo Film Co Ltd カメラの測距装置
JPH0261620A (ja) 1988-08-29 1990-03-01 Hitachi Ltd 液晶表示装置
WO1999003926A1 (fr) * 1997-07-15 1999-01-28 Asahi Kasei Kogyo Kabushiki Kaisha Composition alcoxysilane/polymere organique destinee a la production de fines pellicules isolantes et procede d'utilisation
JP2002033314A (ja) 2000-02-10 2002-01-31 Applied Materials Inc Ｐｅｃｖｄキャッピングモジュールを含む低誘電率誘電体処理のための方法及び一体型装置
JP2005166716A (ja) * 2003-11-28 2005-06-23 Tokyo Electron Ltd 絶縁膜の形成方法及び絶縁膜形成システム
JP2005236285A (ja) 2004-02-19 2005-09-02 Internatl Business Mach Corp <Ibm> 改良された信頼性を有する超低誘電率（ｋ）誘電体を集積化する構造および方法
JP2005272188A (ja) 2004-03-23 2005-10-06 Mitsui Chemicals Inc 疎水化多孔質シリカの製造方法、疎水化多孔質シリカおよび疎水化多孔質シリカ薄膜
JP2007508691A (ja) 2003-10-08 2007-04-05 ハネウェル・インターナショナル・インコーポレーテッド シリル化剤を用いる低誘電率誘電材料の損傷の修復
JP2007281283A (ja) * 2006-04-10 2007-10-25 Kobe Steel Ltd 多孔質膜の製造方法及びその方法によって製造された多孔質膜

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6448331B1 (en) 1997-07-15 2002-09-10 Asahi Kasei Kabushiki Kaisha Alkoxysilane/organic polymer composition for thin insulating film production and use thereof
US6395651B1 (en) * 1998-07-07 2002-05-28 Alliedsignal Simplified process for producing nanoporous silica
TWI273090B (en) 2002-09-09 2007-02-11 Mitsui Chemicals Inc Method for modifying porous film, modified porous film and use of same
US20040096586A1 (en) * 2002-11-15 2004-05-20 Schulberg Michelle T. System for deposition of mesoporous materials
JP4148969B2 (ja) * 2003-07-17 2008-09-10 ローツェ株式会社 低誘電率膜、及びその製造方法、並びそれを用いた電子部品
JP4412244B2 (ja) * 2005-06-27 2010-02-10 株式会社デンソー エンジン始動制御装置
JP5303954B2 (ja) * 2008-02-15 2013-10-02 東京エレクトロン株式会社 疎水化処理方法、疎水化処理装置、塗布、現像装置及び記憶媒体

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0261620A (ja) 1988-08-29 1990-03-01 Hitachi Ltd 液晶表示装置
JPH027A (ja) 1989-01-04 1990-01-05 Fuji Photo Film Co Ltd カメラの測距装置
WO1999003926A1 (fr) * 1997-07-15 1999-01-28 Asahi Kasei Kogyo Kabushiki Kaisha Composition alcoxysilane/polymere organique destinee a la production de fines pellicules isolantes et procede d'utilisation
JP2002033314A (ja) 2000-02-10 2002-01-31 Applied Materials Inc Ｐｅｃｖｄキャッピングモジュールを含む低誘電率誘電体処理のための方法及び一体型装置
JP2007508691A (ja) 2003-10-08 2007-04-05 ハネウェル・インターナショナル・インコーポレーテッド シリル化剤を用いる低誘電率誘電材料の損傷の修復
JP2005166716A (ja) * 2003-11-28 2005-06-23 Tokyo Electron Ltd 絶縁膜の形成方法及び絶縁膜形成システム
JP2005236285A (ja) 2004-02-19 2005-09-02 Internatl Business Mach Corp <Ibm> 改良された信頼性を有する超低誘電率（ｋ）誘電体を集積化する構造および方法
JP2005272188A (ja) 2004-03-23 2005-10-06 Mitsui Chemicals Inc 疎水化多孔質シリカの製造方法、疎水化多孔質シリカおよび疎水化多孔質シリカ薄膜
JP2007281283A (ja) * 2006-04-10 2007-10-25 Kobe Steel Ltd 多孔質膜の製造方法及びその方法によって製造された多孔質膜

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2197024A4

Also Published As

Publication number Publication date
US20100221433A1 (en) 2010-09-02
US8273410B2 (en) 2012-09-25
KR101125171B1 (ko) 2012-03-20
TW200929359A (en) 2009-07-01
KR20100046259A (ko) 2010-05-06
JP2009094183A (ja) 2009-04-30
CN101821838A (zh) 2010-09-01
EP2197024A4 (en) 2010-09-29
EP2197024A1 (en) 2010-06-16

Similar Documents

Publication Publication Date Title
WO2007083654A8 (ja) シリカ質膜の製造法およびそれにより製造されたシリカ質膜付き基板
WO2007040749A3 (en) A method of forming a silicon oxynitride film with tensile stress
WO2009134328A3 (en) Methods for forming electrodes in phase change memory devices
WO2010063504A3 (en) Imprint lithography apparatus and method
EP1615260A3 (en) Organic silicon-oxide-based film, composition and method for forming the same, and semiconductor device
TW200614331A (en) Method of manufacturing semiconductor device and semiconductor device manufactured by using the same
WO2003038868A3 (en) High resistivity silicon carbide single crystal and method of producing it
WO2009111473A3 (en) Method for curing a porous low dielectric constant dielectric film
EP1150346A3 (en) A process for preparing insulating material having low dielectric constant
WO2008133718A3 (en) A gas separation membrane system and method of making thereof using nanoscale metal material
WO2008102902A8 (ja) 光学用部材、それを用いた光学系及び光学用部材の製造方法
BRPI0410641A (pt) processo para revestimento de substratos com material baseado em carbono
TW200633062A (en) Method for patterning an organic material to concurrently form an insulator and a semiconductor and device formed thereby
WO2008156029A1 (ja) 半導体装置の製造方法、半導体装置用絶縁膜及びその製造装置
WO2011008925A3 (en) Methods for forming dielectric layers
WO2011008456A3 (en) Methods of forming oxide layers on substrates
TW200712000A (en) Method for producing porous silica and apparatus for producing thereof
WO2004101433A3 (de) Verfahren zur herstellung von porösem, kohlenstoffbasiertem material
WO2006077136A3 (de) Elssktro-optisches element mit gesteuerter, insbesondere uniformer funktionali tätsverssilung
WO2009044529A1 (ja) 疎水化多孔質膜の製造方法
WO2009114281A3 (en) Smoothing a metallic substrate for a solar cell
WO2008078620A1 (ja) 新規なポリイミド前駆体組成物、その利用及びそれらの製造方法
WO2009044938A3 (en) Method of forming a ceramic silicon oxide type coating, method of producing an inorganic base material, agent for forming a ceramic silicon oxide type coating, and semiconductor device
TW200604253A (en) Method for forming organic silica-based film, organic silica-based film, wiring structure, semiconductor device and composition for forming film
Piazza et al. Effect of air on oxygen p‐doped graphene on SiO2

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880110373.7

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08836263

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20107005825

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 2008836263

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 12680275

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE