KR101125171B1 - 소수화 다공질막의 제조방법 - Google Patents

소수화 다공질막의 제조방법 Download PDF

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KR101125171B1
KR101125171B1 KR1020107005825A KR20107005825A KR101125171B1 KR 101125171 B1 KR101125171 B1 KR 101125171B1 KR 1020107005825 A KR1020107005825 A KR 1020107005825A KR 20107005825 A KR20107005825 A KR 20107005825A KR 101125171 B1 KR101125171 B1 KR 101125171B1
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gas
substrate
porous membrane
temperature
mixed gas
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KR20100046259A (ko
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신이치 치카키
타카히로 나카야마
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가부시키가이샤 아루바쿠
르네사스 일렉트로닉스 가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02359—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment to change the surface groups of the insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31058—After-treatment of organic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Compounds (AREA)
KR1020107005825A 2007-10-05 2008-09-29 소수화 다공질막의 제조방법 Active KR101125171B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007261620A JP2009094183A (ja) 2007-10-05 2007-10-05 疎水化多孔質膜の製造方法
JPJP-P-2007-261620 2007-10-05
PCT/JP2008/002714 WO2009044529A1 (ja) 2007-10-05 2008-09-29 疎水化多孔質膜の製造方法

Publications (2)

Publication Number Publication Date
KR20100046259A KR20100046259A (ko) 2010-05-06
KR101125171B1 true KR101125171B1 (ko) 2012-03-20

Family

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KR1020107005825A Active KR101125171B1 (ko) 2007-10-05 2008-09-29 소수화 다공질막의 제조방법

Country Status (7)

Country Link
US (1) US8273410B2 (enExample)
EP (1) EP2197024A4 (enExample)
JP (1) JP2009094183A (enExample)
KR (1) KR101125171B1 (enExample)
CN (1) CN101821838A (enExample)
TW (1) TW200929359A (enExample)
WO (1) WO2009044529A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5582710B2 (ja) * 2009-03-24 2014-09-03 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US8617993B2 (en) * 2010-02-01 2013-12-31 Lam Research Corporation Method of reducing pattern collapse in high aspect ratio nanostructures
TWI461302B (zh) * 2012-09-14 2014-11-21 Univ Nat Taiwan Normal A hydrophobic layer, a method of making the same, a method for producing a hydrophobic layer, and a mold
CN109962026B (zh) * 2017-12-26 2022-04-19 无锡华润上华科技有限公司 一种晶圆的预处理方法及光刻方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005166716A (ja) * 2003-11-28 2005-06-23 Tokyo Electron Ltd 絶縁膜の形成方法及び絶縁膜形成システム
JP2007281283A (ja) * 2006-04-10 2007-10-25 Kobe Steel Ltd 多孔質膜の製造方法及びその方法によって製造された多孔質膜

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0261620A (ja) 1988-08-29 1990-03-01 Hitachi Ltd 液晶表示装置
JPH027A (ja) 1989-01-04 1990-01-05 Fuji Photo Film Co Ltd カメラの測距装置
US6448331B1 (en) 1997-07-15 2002-09-10 Asahi Kasei Kabushiki Kaisha Alkoxysilane/organic polymer composition for thin insulating film production and use thereof
DE69827259T2 (de) * 1997-07-15 2006-02-16 Asahi Kasei Kabushiki Kaisha Zusammensetzungen aus alkoxysilan und organischem polymer zur herstellung von dünnen isolierenden schichten und deren verwendung
US6395651B1 (en) 1998-07-07 2002-05-28 Alliedsignal Simplified process for producing nanoporous silica
EP1124252A2 (en) * 2000-02-10 2001-08-16 Applied Materials, Inc. Apparatus and process for processing substrates
TWI273090B (en) 2002-09-09 2007-02-11 Mitsui Chemicals Inc Method for modifying porous film, modified porous film and use of same
US20040096586A1 (en) * 2002-11-15 2004-05-20 Schulberg Michelle T. System for deposition of mesoporous materials
CN1823406B (zh) * 2003-07-17 2011-04-20 日商乐华股份有限公司 低介电常数膜及其制造方法、以及使用它的电子器件
CN1839468B (zh) 2003-10-08 2010-11-24 霍尼韦尔国际公司 使用甲硅烷基化剂修复低k介电材料的损伤
US7088003B2 (en) * 2004-02-19 2006-08-08 International Business Machines Corporation Structures and methods for integration of ultralow-k dielectrics with improved reliability
JP2005272188A (ja) * 2004-03-23 2005-10-06 Mitsui Chemicals Inc 疎水化多孔質シリカの製造方法、疎水化多孔質シリカおよび疎水化多孔質シリカ薄膜
JP4412244B2 (ja) * 2005-06-27 2010-02-10 株式会社デンソー エンジン始動制御装置
JP5303954B2 (ja) * 2008-02-15 2013-10-02 東京エレクトロン株式会社 疎水化処理方法、疎水化処理装置、塗布、現像装置及び記憶媒体

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005166716A (ja) * 2003-11-28 2005-06-23 Tokyo Electron Ltd 絶縁膜の形成方法及び絶縁膜形成システム
JP2007281283A (ja) * 2006-04-10 2007-10-25 Kobe Steel Ltd 多孔質膜の製造方法及びその方法によって製造された多孔質膜

Also Published As

Publication number Publication date
US20100221433A1 (en) 2010-09-02
US8273410B2 (en) 2012-09-25
JP2009094183A (ja) 2009-04-30
EP2197024A4 (en) 2010-09-29
TW200929359A (en) 2009-07-01
KR20100046259A (ko) 2010-05-06
EP2197024A1 (en) 2010-06-16
WO2009044529A1 (ja) 2009-04-09
CN101821838A (zh) 2010-09-01

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