CN101821838A - 制造疏水化多孔膜的方法 - Google Patents

制造疏水化多孔膜的方法 Download PDF

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Publication number
CN101821838A
CN101821838A CN200880110373A CN200880110373A CN101821838A CN 101821838 A CN101821838 A CN 101821838A CN 200880110373 A CN200880110373 A CN 200880110373A CN 200880110373 A CN200880110373 A CN 200880110373A CN 101821838 A CN101821838 A CN 101821838A
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CN
China
Prior art keywords
gas
substrate
temperature
insulating film
hydrophobilized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN200880110373A
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English (en)
Chinese (zh)
Inventor
邻真一
中山高博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Ulvac Inc
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NEC Corp
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Ulvac Inc filed Critical NEC Corp
Publication of CN101821838A publication Critical patent/CN101821838A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02359—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment to change the surface groups of the insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31058—After-treatment of organic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Compounds (AREA)
CN200880110373A 2007-10-05 2008-09-29 制造疏水化多孔膜的方法 Pending CN101821838A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007-261620 2007-10-05
JP2007261620A JP2009094183A (ja) 2007-10-05 2007-10-05 疎水化多孔質膜の製造方法
PCT/JP2008/002714 WO2009044529A1 (ja) 2007-10-05 2008-09-29 疎水化多孔質膜の製造方法

Publications (1)

Publication Number Publication Date
CN101821838A true CN101821838A (zh) 2010-09-01

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Family Applications (1)

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CN200880110373A Pending CN101821838A (zh) 2007-10-05 2008-09-29 制造疏水化多孔膜的方法

Country Status (7)

Country Link
US (1) US8273410B2 (enExample)
EP (1) EP2197024A4 (enExample)
JP (1) JP2009094183A (enExample)
KR (1) KR101125171B1 (enExample)
CN (1) CN101821838A (enExample)
TW (1) TW200929359A (enExample)
WO (1) WO2009044529A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109962026A (zh) * 2017-12-26 2019-07-02 无锡华润上华科技有限公司 一种晶圆的预处理方法及光刻方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5582710B2 (ja) * 2009-03-24 2014-09-03 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US8617993B2 (en) * 2010-02-01 2013-12-31 Lam Research Corporation Method of reducing pattern collapse in high aspect ratio nanostructures
TWI461302B (zh) * 2012-09-14 2014-11-21 Univ Nat Taiwan Normal A hydrophobic layer, a method of making the same, a method for producing a hydrophobic layer, and a mold

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020123242A1 (en) * 1998-07-07 2002-09-05 Smith Douglas M. Simplified process for producing nanoporous silica
US20060244034A1 (en) * 2003-07-17 2006-11-02 Rorze Corporation Low-dielectric films, and manufacturion method thereof, and electronic component using it

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JPH0261620A (ja) 1988-08-29 1990-03-01 Hitachi Ltd 液晶表示装置
JPH027A (ja) 1989-01-04 1990-01-05 Fuji Photo Film Co Ltd カメラの測距装置
US6448331B1 (en) 1997-07-15 2002-09-10 Asahi Kasei Kabushiki Kaisha Alkoxysilane/organic polymer composition for thin insulating film production and use thereof
DE69827259T2 (de) * 1997-07-15 2006-02-16 Asahi Kasei Kabushiki Kaisha Zusammensetzungen aus alkoxysilan und organischem polymer zur herstellung von dünnen isolierenden schichten und deren verwendung
EP1124252A2 (en) * 2000-02-10 2001-08-16 Applied Materials, Inc. Apparatus and process for processing substrates
TWI273090B (en) 2002-09-09 2007-02-11 Mitsui Chemicals Inc Method for modifying porous film, modified porous film and use of same
US20040096586A1 (en) * 2002-11-15 2004-05-20 Schulberg Michelle T. System for deposition of mesoporous materials
CN1839468B (zh) 2003-10-08 2010-11-24 霍尼韦尔国际公司 使用甲硅烷基化剂修复低k介电材料的损伤
JP3666751B2 (ja) 2003-11-28 2005-06-29 東京エレクトロン株式会社 絶縁膜の形成方法及び絶縁膜形成システム
US7088003B2 (en) * 2004-02-19 2006-08-08 International Business Machines Corporation Structures and methods for integration of ultralow-k dielectrics with improved reliability
JP2005272188A (ja) * 2004-03-23 2005-10-06 Mitsui Chemicals Inc 疎水化多孔質シリカの製造方法、疎水化多孔質シリカおよび疎水化多孔質シリカ薄膜
JP4412244B2 (ja) * 2005-06-27 2010-02-10 株式会社デンソー エンジン始動制御装置
JP4623520B2 (ja) * 2006-04-10 2011-02-02 株式会社神戸製鋼所 多孔質膜の製造方法及びその方法によって製造された多孔質膜
JP5303954B2 (ja) * 2008-02-15 2013-10-02 東京エレクトロン株式会社 疎水化処理方法、疎水化処理装置、塗布、現像装置及び記憶媒体

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020123242A1 (en) * 1998-07-07 2002-09-05 Smith Douglas M. Simplified process for producing nanoporous silica
US20060244034A1 (en) * 2003-07-17 2006-11-02 Rorze Corporation Low-dielectric films, and manufacturion method thereof, and electronic component using it

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109962026A (zh) * 2017-12-26 2019-07-02 无锡华润上华科技有限公司 一种晶圆的预处理方法及光刻方法

Also Published As

Publication number Publication date
US20100221433A1 (en) 2010-09-02
US8273410B2 (en) 2012-09-25
JP2009094183A (ja) 2009-04-30
EP2197024A4 (en) 2010-09-29
TW200929359A (en) 2009-07-01
KR20100046259A (ko) 2010-05-06
EP2197024A1 (en) 2010-06-16
WO2009044529A1 (ja) 2009-04-09
KR101125171B1 (ko) 2012-03-20

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Application publication date: 20100901