JP2009088532A5 - - Google Patents

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Publication number
JP2009088532A5
JP2009088532A5 JP2008250993A JP2008250993A JP2009088532A5 JP 2009088532 A5 JP2009088532 A5 JP 2009088532A5 JP 2008250993 A JP2008250993 A JP 2008250993A JP 2008250993 A JP2008250993 A JP 2008250993A JP 2009088532 A5 JP2009088532 A5 JP 2009088532A5
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JP
Japan
Prior art keywords
waveguide layer
layer
semiconductor laser
partial region
waveguide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008250993A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009088532A (ja
JP5362306B2 (ja
Filing date
Publication date
Priority claimed from DE102007058950A external-priority patent/DE102007058950A1/de
Application filed filed Critical
Publication of JP2009088532A publication Critical patent/JP2009088532A/ja
Publication of JP2009088532A5 publication Critical patent/JP2009088532A5/ja
Application granted granted Critical
Publication of JP5362306B2 publication Critical patent/JP5362306B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008250993A 2007-09-28 2008-09-29 導波体を備えるエッジ発光型半導体レーザ Active JP5362306B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102007046722 2007-09-28
DE102007046722.4 2007-09-28
DE102007058950.8 2007-12-07
DE102007058950A DE102007058950A1 (de) 2007-09-28 2007-12-07 Kantenemittierender Halbleiterlaser mit einem Wellenleiter

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013183113A Division JP5611431B2 (ja) 2007-09-28 2013-09-04 導波体を備えるエッジ発光型半導体レーザ

Publications (3)

Publication Number Publication Date
JP2009088532A JP2009088532A (ja) 2009-04-23
JP2009088532A5 true JP2009088532A5 (enExample) 2011-09-22
JP5362306B2 JP5362306B2 (ja) 2013-12-11

Family

ID=40384476

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2008250993A Active JP5362306B2 (ja) 2007-09-28 2008-09-29 導波体を備えるエッジ発光型半導体レーザ
JP2013183113A Active JP5611431B2 (ja) 2007-09-28 2013-09-04 導波体を備えるエッジ発光型半導体レーザ

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2013183113A Active JP5611431B2 (ja) 2007-09-28 2013-09-04 導波体を備えるエッジ発光型半導体レーザ

Country Status (4)

Country Link
US (1) US7813399B2 (enExample)
EP (1) EP2337169B1 (enExample)
JP (2) JP5362306B2 (enExample)
DE (1) DE102007058950A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011103952B4 (de) * 2011-06-10 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Kantenemittierender Halbleiterlaser
KR102661948B1 (ko) * 2018-01-19 2024-04-29 삼성전자주식회사 반도체 레이저 장치 및 그 제조 방법

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4159452A (en) * 1978-01-13 1979-06-26 Bell Telephone Laboratories, Incorporated Dual beam double cavity heterostructure laser with branching output waveguides
JPS5562792A (en) 1978-10-11 1980-05-12 Nec Corp Injection type semiconductor laser element
JPS6225485A (ja) 1985-07-25 1987-02-03 Mitsubishi Electric Corp 半導体レ−ザ装置
SE449673B (sv) * 1985-09-20 1987-05-11 Ericsson Telefon Ab L M Optisk forsterkaranordning med brusfilterfunktion
JP2911856B2 (ja) * 1987-10-09 1999-06-23 株式会社日立製作所 半導体レーザ装置
JP2825508B2 (ja) * 1987-10-09 1998-11-18 株式会社日立製作所 半導体レーザ装置および光通信システム
JPH01100988A (ja) * 1987-10-13 1989-04-19 Sharp Corp 半導体レーザ装置
EP0332723A1 (en) 1988-03-15 1989-09-20 International Business Machines Corporation High-power semiconductor diode laser
JPH02310503A (ja) * 1989-05-26 1990-12-26 Nippon Telegr & Teleph Corp <Ntt> 半導体方向性光結合器の結合長調整方法
EP0416190B1 (en) 1989-09-07 1994-06-01 International Business Machines Corporation Method for mirror passivation of semiconductor laser diodes
JP2957240B2 (ja) * 1990-07-20 1999-10-04 キヤノン株式会社 波長可変半導体レーザ
US5171707A (en) 1990-09-13 1992-12-15 Mitsubishi Denki Kabushiki Kaisha Method of fabricating semiconductor laser device using the light generated by the laser to disorder its active layer at the end surfaces thereby forming window regions
JPH04237001A (ja) * 1991-01-21 1992-08-25 Nippon Telegr & Teleph Corp <Ntt> 光デバイス
JP3302088B2 (ja) * 1993-03-15 2002-07-15 キヤノン株式会社 集積型光デバイスおよびそれを用いた光通信ネットワーク
EP0620475B1 (en) * 1993-03-15 1998-12-30 Canon Kabushiki Kaisha Optical devices and optical communication systems using the optical device
JPH06302906A (ja) 1993-04-12 1994-10-28 Mitsubishi Electric Corp 半導体レーザ及びその製造方法
JPH07183482A (ja) * 1993-12-22 1995-07-21 Nippon Telegr & Teleph Corp <Ntt> 光送信素子および光送受信素子
DE59500334D1 (de) * 1994-01-19 1997-07-31 Siemens Ag Abstimmbare Laserdiode
JPH0815737A (ja) * 1994-06-29 1996-01-19 Oki Electric Ind Co Ltd 方向性結合器形光変調器及びその製造方法
EP0733270B1 (en) 1994-10-06 1999-06-30 Uniphase Opto Holdings, Inc. Radiation-emitting semiconductor diode and method of manufacturing such a diode
JP3390893B2 (ja) * 1995-02-24 2003-03-31 富士通株式会社 半導体レーザ装置
US5721750A (en) * 1995-04-13 1998-02-24 Korea Advanced Institute Of Science And Technology Laser diode for optoelectronic integrated circuit and a process for preparing the same
US5528616A (en) * 1995-04-24 1996-06-18 International Business Machines Corporation Asymmetric dual waveguide laser
US5668049A (en) 1996-07-31 1997-09-16 Lucent Technologies Inc. Method of making a GaAs-based laser comprising a facet coating with gas phase sulphur
EP0898345A3 (en) 1997-08-13 2004-01-02 Mitsubishi Chemical Corporation Compound semiconductor light emitting device and method of fabricating the same
US6381380B1 (en) * 1998-06-24 2002-04-30 The Trustees Of Princeton University Twin waveguide based design for photonic integrated circuits
JP2001350044A (ja) 2000-06-05 2001-12-21 Minolta Co Ltd 光導波路デバイス
DE10046580A1 (de) * 2000-09-20 2002-04-04 Osram Opto Semiconductors Gmbh Halbleiter-Laser
JP2003156644A (ja) * 2001-11-21 2003-05-30 Seiko Epson Corp 方向性結合器および光通信用装置
DE10221952B4 (de) 2002-05-13 2007-07-12 Forschungsverbund Berlin E.V. Verfahren zur Passivierung der Spiegelflächen von optischen Halbleiterbauelementen
JP2006269543A (ja) * 2005-03-22 2006-10-05 Oki Electric Ind Co Ltd 波長可変素子

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