JP5362306B2 - 導波体を備えるエッジ発光型半導体レーザ - Google Patents

導波体を備えるエッジ発光型半導体レーザ Download PDF

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Publication number
JP5362306B2
JP5362306B2 JP2008250993A JP2008250993A JP5362306B2 JP 5362306 B2 JP5362306 B2 JP 5362306B2 JP 2008250993 A JP2008250993 A JP 2008250993A JP 2008250993 A JP2008250993 A JP 2008250993A JP 5362306 B2 JP5362306 B2 JP 5362306B2
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Prior art keywords
waveguide layer
layer
semiconductor laser
waveguide
partial region
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Japanese (ja)
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JP2009088532A5 (enExample
JP2009088532A (ja
Inventor
シュミート ヴォルフガング
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/204—Strongly index guided structures

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP2008250993A 2007-09-28 2008-09-29 導波体を備えるエッジ発光型半導体レーザ Active JP5362306B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102007046722 2007-09-28
DE102007046722.4 2007-09-28
DE102007058950.8 2007-12-07
DE102007058950A DE102007058950A1 (de) 2007-09-28 2007-12-07 Kantenemittierender Halbleiterlaser mit einem Wellenleiter

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013183113A Division JP5611431B2 (ja) 2007-09-28 2013-09-04 導波体を備えるエッジ発光型半導体レーザ

Publications (3)

Publication Number Publication Date
JP2009088532A JP2009088532A (ja) 2009-04-23
JP2009088532A5 JP2009088532A5 (enExample) 2011-09-22
JP5362306B2 true JP5362306B2 (ja) 2013-12-11

Family

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Family Applications (2)

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JP2008250993A Active JP5362306B2 (ja) 2007-09-28 2008-09-29 導波体を備えるエッジ発光型半導体レーザ
JP2013183113A Active JP5611431B2 (ja) 2007-09-28 2013-09-04 導波体を備えるエッジ発光型半導体レーザ

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2013183113A Active JP5611431B2 (ja) 2007-09-28 2013-09-04 導波体を備えるエッジ発光型半導体レーザ

Country Status (4)

Country Link
US (1) US7813399B2 (enExample)
EP (1) EP2337169B1 (enExample)
JP (2) JP5362306B2 (enExample)
DE (1) DE102007058950A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011103952B4 (de) 2011-06-10 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Kantenemittierender Halbleiterlaser
KR102661948B1 (ko) * 2018-01-19 2024-04-29 삼성전자주식회사 반도체 레이저 장치 및 그 제조 방법

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* Cited by examiner, † Cited by third party
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US4159452A (en) * 1978-01-13 1979-06-26 Bell Telephone Laboratories, Incorporated Dual beam double cavity heterostructure laser with branching output waveguides
JPS5562792A (en) 1978-10-11 1980-05-12 Nec Corp Injection type semiconductor laser element
JPS6225485A (ja) 1985-07-25 1987-02-03 Mitsubishi Electric Corp 半導体レ−ザ装置
SE449673B (sv) 1985-09-20 1987-05-11 Ericsson Telefon Ab L M Optisk forsterkaranordning med brusfilterfunktion
JP2825508B2 (ja) * 1987-10-09 1998-11-18 株式会社日立製作所 半導体レーザ装置および光通信システム
JP2911856B2 (ja) * 1987-10-09 1999-06-23 株式会社日立製作所 半導体レーザ装置
JPH01100988A (ja) * 1987-10-13 1989-04-19 Sharp Corp 半導体レーザ装置
EP0332723A1 (en) 1988-03-15 1989-09-20 International Business Machines Corporation High-power semiconductor diode laser
JPH02310503A (ja) * 1989-05-26 1990-12-26 Nippon Telegr & Teleph Corp <Ntt> 半導体方向性光結合器の結合長調整方法
EP0416190B1 (en) 1989-09-07 1994-06-01 International Business Machines Corporation Method for mirror passivation of semiconductor laser diodes
JP2957240B2 (ja) * 1990-07-20 1999-10-04 キヤノン株式会社 波長可変半導体レーザ
US5171707A (en) 1990-09-13 1992-12-15 Mitsubishi Denki Kabushiki Kaisha Method of fabricating semiconductor laser device using the light generated by the laser to disorder its active layer at the end surfaces thereby forming window regions
JPH04237001A (ja) * 1991-01-21 1992-08-25 Nippon Telegr & Teleph Corp <Ntt> 光デバイス
DE69415576T2 (de) * 1993-03-15 1999-06-17 Canon K.K., Tokio/Tokyo Optische Vorrichtungen und optische Übertragungssystemen die diese verwenden
JP3302088B2 (ja) * 1993-03-15 2002-07-15 キヤノン株式会社 集積型光デバイスおよびそれを用いた光通信ネットワーク
JPH06302906A (ja) 1993-04-12 1994-10-28 Mitsubishi Electric Corp 半導体レーザ及びその製造方法
JPH07183482A (ja) * 1993-12-22 1995-07-21 Nippon Telegr & Teleph Corp <Ntt> 光送信素子および光送受信素子
EP0664587B1 (de) * 1994-01-19 1997-06-25 Siemens Aktiengesellschaft Abstimmbare Laserdiode
JPH0815737A (ja) * 1994-06-29 1996-01-19 Oki Electric Ind Co Ltd 方向性結合器形光変調器及びその製造方法
WO1996011503A2 (en) 1994-10-06 1996-04-18 Philips Electronics N.V. Radiation-emitting semiconductor diode and method of manufacturing such a diode
JP3390893B2 (ja) * 1995-02-24 2003-03-31 富士通株式会社 半導体レーザ装置
US5721750A (en) * 1995-04-13 1998-02-24 Korea Advanced Institute Of Science And Technology Laser diode for optoelectronic integrated circuit and a process for preparing the same
US5528616A (en) * 1995-04-24 1996-06-18 International Business Machines Corporation Asymmetric dual waveguide laser
US5668049A (en) 1996-07-31 1997-09-16 Lucent Technologies Inc. Method of making a GaAs-based laser comprising a facet coating with gas phase sulphur
EP0898345A3 (en) 1997-08-13 2004-01-02 Mitsubishi Chemical Corporation Compound semiconductor light emitting device and method of fabricating the same
US6381380B1 (en) * 1998-06-24 2002-04-30 The Trustees Of Princeton University Twin waveguide based design for photonic integrated circuits
JP2001350044A (ja) 2000-06-05 2001-12-21 Minolta Co Ltd 光導波路デバイス
DE10046580A1 (de) * 2000-09-20 2002-04-04 Osram Opto Semiconductors Gmbh Halbleiter-Laser
JP2003156644A (ja) * 2001-11-21 2003-05-30 Seiko Epson Corp 方向性結合器および光通信用装置
DE10221952B4 (de) 2002-05-13 2007-07-12 Forschungsverbund Berlin E.V. Verfahren zur Passivierung der Spiegelflächen von optischen Halbleiterbauelementen
JP2006269543A (ja) * 2005-03-22 2006-10-05 Oki Electric Ind Co Ltd 波長可変素子

Also Published As

Publication number Publication date
US7813399B2 (en) 2010-10-12
EP2337169A3 (de) 2011-06-29
JP2014013926A (ja) 2014-01-23
EP2337169B1 (de) 2017-03-22
DE102007058950A1 (de) 2009-04-02
EP2337169A2 (de) 2011-06-22
US20090147815A1 (en) 2009-06-11
JP5611431B2 (ja) 2014-10-22
JP2009088532A (ja) 2009-04-23

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