JP2010239051A5 - - Google Patents

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Publication number
JP2010239051A5
JP2010239051A5 JP2009087569A JP2009087569A JP2010239051A5 JP 2010239051 A5 JP2010239051 A5 JP 2010239051A5 JP 2009087569 A JP2009087569 A JP 2009087569A JP 2009087569 A JP2009087569 A JP 2009087569A JP 2010239051 A5 JP2010239051 A5 JP 2010239051A5
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JP
Japan
Prior art keywords
region
waveguide
semiconductor device
optical semiconductor
layer
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Application number
JP2009087569A
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English (en)
Japanese (ja)
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JP2010239051A (ja
JP5461046B2 (ja
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Priority to JP2009087569A priority Critical patent/JP5461046B2/ja
Priority claimed from JP2009087569A external-priority patent/JP5461046B2/ja
Priority to US12/749,629 priority patent/US8463086B2/en
Publication of JP2010239051A publication Critical patent/JP2010239051A/ja
Publication of JP2010239051A5 publication Critical patent/JP2010239051A5/ja
Application granted granted Critical
Publication of JP5461046B2 publication Critical patent/JP5461046B2/ja
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JP2009087569A 2009-03-31 2009-03-31 光半導体装置 Active JP5461046B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009087569A JP5461046B2 (ja) 2009-03-31 2009-03-31 光半導体装置
US12/749,629 US8463086B2 (en) 2009-03-31 2010-03-30 Optical semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009087569A JP5461046B2 (ja) 2009-03-31 2009-03-31 光半導体装置

Publications (3)

Publication Number Publication Date
JP2010239051A JP2010239051A (ja) 2010-10-21
JP2010239051A5 true JP2010239051A5 (enExample) 2012-05-17
JP5461046B2 JP5461046B2 (ja) 2014-04-02

Family

ID=42784358

Family Applications (1)

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JP2009087569A Active JP5461046B2 (ja) 2009-03-31 2009-03-31 光半導体装置

Country Status (2)

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US (1) US8463086B2 (enExample)
JP (1) JP5461046B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012160524A (ja) * 2011-01-31 2012-08-23 Hitachi Ltd 半導体レーザおよびその製造方法
JP2014063052A (ja) * 2012-09-21 2014-04-10 Mitsubishi Electric Corp 光変調器の製造方法および光変調器
JP2015056515A (ja) * 2013-09-12 2015-03-23 日本オクラロ株式会社 半導体光素子及び光通信モジュール
KR101679475B1 (ko) * 2014-08-18 2016-11-24 최원진 짧은 광 펄스 신호 발생기
JP6654468B2 (ja) * 2016-02-29 2020-02-26 日本ルメンタム株式会社 光送信モジュール
JP2018046210A (ja) 2016-09-15 2018-03-22 住友電工デバイス・イノベーション株式会社 光半導体装置及び光半導体装置の制御方法
DE102016125857B4 (de) * 2016-12-29 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaserdiode
US11837838B1 (en) * 2020-01-31 2023-12-05 Freedom Photonics Llc Laser having tapered region
WO2023228346A1 (ja) * 2022-05-26 2023-11-30 三菱電機株式会社 半導体光集積素子および製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08288592A (ja) * 1995-04-14 1996-11-01 Oki Electric Ind Co Ltd 集積化半導体光デバイスおよびその製造方法
WO1997024787A1 (en) * 1995-12-28 1997-07-10 Matsushita Electric Industrial Co., Ltd. Semiconductor laser and process for producing the same
JP2000349394A (ja) * 1999-06-02 2000-12-15 Matsushita Electric Ind Co Ltd 半導体レーザ装置
JP2001013472A (ja) * 1999-06-28 2001-01-19 Nec Corp 光半導体素子および光通信装置
JP4046535B2 (ja) 2002-03-29 2008-02-13 ユーディナデバイス株式会社 光半導体装置、光モジュール及び光半導体駆動回路
JP4330376B2 (ja) * 2002-10-22 2009-09-16 富士通株式会社 光半導体装置及びその駆動方法
JP2009033009A (ja) * 2007-07-30 2009-02-12 Panasonic Corp 半導体レーザ装置及びその製造方法

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