JP2010239051A - 光半導体装置 - Google Patents
光半導体装置 Download PDFInfo
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- JP2010239051A JP2010239051A JP2009087569A JP2009087569A JP2010239051A JP 2010239051 A JP2010239051 A JP 2010239051A JP 2009087569 A JP2009087569 A JP 2009087569A JP 2009087569 A JP2009087569 A JP 2009087569A JP 2010239051 A JP2010239051 A JP 2010239051A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 55
- 230000003287 optical effect Effects 0.000 title claims abstract description 26
- 230000031700 light absorption Effects 0.000 claims description 31
- 230000001902 propagating effect Effects 0.000 claims description 9
- 230000007423 decrease Effects 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 13
- 239000000758 substrate Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 238000005253 cladding Methods 0.000 description 6
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 230000004323 axial length Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/176—Specific passivation layers on surfaces other than the emission facet
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0651—Mode control
- H01S5/0653—Mode suppression, e.g. specific multimode
- H01S5/0655—Single transverse or lateral mode emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
- H01S5/1014—Tapered waveguide, e.g. spotsize converter
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
【解決手段】光半導体装置100Aは、1.25μm以上の波長を有する伝播光が導波される光半導体装置であって、InPに格子整合し、1.50μm以上の幅を有する半導体からなる埋め込み型の第1の導波路32と、InPに格子整合し、第1の導波路よりも狭い幅で、かつ、第1の導波路の屈折率とは異なる屈折率を有する半導体からなる埋め込み型の第2の導波路34と、第1の導波路32から第2の導波路34に向かって幅が狭くなる構造を有し、1.35μm以下の幅の領域に第1の導波路と第2の導波路との接合面を備えた埋め込み型の中間導波部70と、を有する。
【選択図】図2
Description
最初に、後述する比較例及び実施例に共通する半導体レーザの基本構成について説明する。
(比較例)
20 変調領域
30 基板
32 活性層
34 光吸収層
36 上部クラッド層
40、44 コンタクト層
42、46 電極
70 中間導波部
80 接合面
100 半導体レーザ
Claims (5)
- 1.25μm以上の波長を有する伝播光が導波される光半導体装置であって、
InPに格子整合し、1.50μm以上の幅を有する半導体からなる埋め込み型の第1の導波路と、
InPに格子整合し、前記第1の導波路よりも狭い幅で、かつ、前記第1の導波路の屈折率とは異なる屈折率を有する半導体からなる埋め込み型の第2の導波路と、
前記第1の導波路から前記第2の導波路に向かって幅が狭くなる構造を有し、1.35μm以下の幅の領域に前記第1の導波路と前記第2の導波路との接合面を備えた埋め込み型の中間導波部と、
を有することを特徴とする光半導体装置。 - 前記第1の導波路は半導体レーザの活性層であり、前記第2の導波路は光変調器の光吸収層であることを特徴とする請求項1記載の光半導体装置。
- 前記第1および第2の導波路のコアは、InGaAsP、AlInGaAs、或いはその多層構造からなることを特徴とする請求項2記載の光半導体装置。
- 前記第1および第2の導波路上にはそれぞれコンタクト層が設けられると共に、前記中間導波部上には、各コンタクト層の間の離間領域が位置することを特徴とする請求項1記載の光半導体装置。
- 前記コンタクト層の一部は、前記中間導波部上に位置することを特徴とする請求項4記載の光半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009087569A JP5461046B2 (ja) | 2009-03-31 | 2009-03-31 | 光半導体装置 |
US12/749,629 US8463086B2 (en) | 2009-03-31 | 2010-03-30 | Optical semiconductor device |
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JP2009087569A JP5461046B2 (ja) | 2009-03-31 | 2009-03-31 | 光半導体装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010239051A true JP2010239051A (ja) | 2010-10-21 |
JP2010239051A5 JP2010239051A5 (ja) | 2012-05-17 |
JP5461046B2 JP5461046B2 (ja) | 2014-04-02 |
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JP2009087569A Active JP5461046B2 (ja) | 2009-03-31 | 2009-03-31 | 光半導体装置 |
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JP (1) | JP5461046B2 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012160524A (ja) * | 2011-01-31 | 2012-08-23 | Hitachi Ltd | 半導体レーザおよびその製造方法 |
KR101679475B1 (ko) * | 2014-08-18 | 2016-11-24 | 최원진 | 짧은 광 펄스 신호 발생기 |
US10148061B2 (en) | 2016-09-15 | 2018-12-04 | Sumitomo Electric Device Innovations, Inc. | Optical amplifying system and method of controlling the same |
JP7205015B1 (ja) * | 2022-05-26 | 2023-01-16 | 三菱電機株式会社 | 半導体光集積素子および製造方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014063052A (ja) * | 2012-09-21 | 2014-04-10 | Mitsubishi Electric Corp | 光変調器の製造方法および光変調器 |
JP2015056515A (ja) * | 2013-09-12 | 2015-03-23 | 日本オクラロ株式会社 | 半導体光素子及び光通信モジュール |
JP6654468B2 (ja) * | 2016-02-29 | 2020-02-26 | 日本ルメンタム株式会社 | 光送信モジュール |
DE102016125857B4 (de) * | 2016-12-29 | 2022-05-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterlaserdiode |
US11837838B1 (en) * | 2020-01-31 | 2023-12-05 | Freedom Photonics Llc | Laser having tapered region |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08288592A (ja) * | 1995-04-14 | 1996-11-01 | Oki Electric Ind Co Ltd | 集積化半導体光デバイスおよびその製造方法 |
JP2001013472A (ja) * | 1999-06-28 | 2001-01-19 | Nec Corp | 光半導体素子および光通信装置 |
JP2004235600A (ja) * | 2002-10-22 | 2004-08-19 | Fujitsu Ltd | 光半導体装置、その製造方法及びその駆動方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997024787A1 (fr) * | 1995-12-28 | 1997-07-10 | Matsushita Electric Industrial Co., Ltd. | Laser a semi-conducteur et procede de fabrication correspondant |
JP2000349394A (ja) * | 1999-06-02 | 2000-12-15 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置 |
JP4046535B2 (ja) * | 2002-03-29 | 2008-02-13 | ユーディナデバイス株式会社 | 光半導体装置、光モジュール及び光半導体駆動回路 |
JP2009033009A (ja) * | 2007-07-30 | 2009-02-12 | Panasonic Corp | 半導体レーザ装置及びその製造方法 |
-
2009
- 2009-03-31 JP JP2009087569A patent/JP5461046B2/ja active Active
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2010
- 2010-03-30 US US12/749,629 patent/US8463086B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08288592A (ja) * | 1995-04-14 | 1996-11-01 | Oki Electric Ind Co Ltd | 集積化半導体光デバイスおよびその製造方法 |
JP2001013472A (ja) * | 1999-06-28 | 2001-01-19 | Nec Corp | 光半導体素子および光通信装置 |
JP2004235600A (ja) * | 2002-10-22 | 2004-08-19 | Fujitsu Ltd | 光半導体装置、その製造方法及びその駆動方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012160524A (ja) * | 2011-01-31 | 2012-08-23 | Hitachi Ltd | 半導体レーザおよびその製造方法 |
KR101679475B1 (ko) * | 2014-08-18 | 2016-11-24 | 최원진 | 짧은 광 펄스 신호 발생기 |
US10148061B2 (en) | 2016-09-15 | 2018-12-04 | Sumitomo Electric Device Innovations, Inc. | Optical amplifying system and method of controlling the same |
JP7205015B1 (ja) * | 2022-05-26 | 2023-01-16 | 三菱電機株式会社 | 半導体光集積素子および製造方法 |
WO2023228346A1 (ja) * | 2022-05-26 | 2023-11-30 | 三菱電機株式会社 | 半導体光集積素子および製造方法 |
Also Published As
Publication number | Publication date |
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US8463086B2 (en) | 2013-06-11 |
US20100247033A1 (en) | 2010-09-30 |
JP5461046B2 (ja) | 2014-04-02 |
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