JP4800389B2 - 光導波路工程で損失を低減するテーパー部を備える光学素子 - Google Patents
光導波路工程で損失を低減するテーパー部を備える光学素子 Download PDFInfo
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- JP4800389B2 JP4800389B2 JP2008532857A JP2008532857A JP4800389B2 JP 4800389 B2 JP4800389 B2 JP 4800389B2 JP 2008532857 A JP2008532857 A JP 2008532857A JP 2008532857 A JP2008532857 A JP 2008532857A JP 4800389 B2 JP4800389 B2 JP 4800389B2
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
- G02B6/2804—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers
- G02B6/2808—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers using a mixing element which evenly distributes an input signal over a number of outputs
- G02B6/2813—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers using a mixing element which evenly distributes an input signal over a number of outputs based on multimode interference effect, i.e. self-imaging
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/217—Multimode interference type
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Optical Integrated Circuits (AREA)
- Semiconductor Lasers (AREA)
Description
3 半導体構造
5 リッジ導波路
7 リッジ導波路
9 半導体表面
11 リッジ
13 リッジ
15 領域
17 領域
18 界面
19 MMI領域(多モード干渉領域)
21 非エッチング緩衝帯
23 上面電極
25 電極
27 受動領域
29 能動領域
31 半導体材料
33 半導体材料
35 コア導波層
39 界面
Claims (19)
- 第一および第二のリッジ導波路を含む半導体構造を備える光学素子であって、各リッジ導波路は、前記半導体構造の表面を横切って延在するリッジを備え、前記第一のリッジ導波路の端は、前記表面の第一の領域上に第一の高さを有し、前記第二のリッジ導波路の端は、前記表面の第二の領域上に前記第一の高さより高い第二の高さを有し、前記半導体構造は、前記第一のリッジ導波路の端と前記第二のリッジ導波路の端との間に位置すると共に前記第一のリッジ導波路の端および前記第二のリッジ導波路の端に隣接して位置する多モード干渉(multimode interference; MMI)領域を含んで、かつ前記第一のリッジ導波路の端と前記第二のリッジ導波路の端との間の遷移を提供し、前記MMI領域の少なくとも一部の幅は、テーパー状である、光学素子。
- 前記MMI領域は、リッジ導波路を備え、前記リッジは、前記半導体構造の前記表面の領域を横切って延在する、請求項1に記載の素子。
- 前記MMI領域の少なくとも一部は、前記半導体構造の前記表面の前記第二の領域の一部を横切って延在する、請求項2に記載の素子。
- 実質的に、前記MMI領域全体は、前記半導体構造の前記表面の前記第二の領域の一部を横切って延在する、請求項3に記載の素子。
- 前記MMI領域は、前記半導体構造の前記表面の第一および第二の領域の両方の一部を横切って延在する、請求項3に記載の素子。
- 前記半導体構造の前記表面の前記第一および第二の領域の間に位置する、前記半導体構造の実質的にエッチングされていない緩衝帯を含む、請求項1から5のいずれか1項に記載の素子。
- 実質的に、前記MMI領域全体の幅は、前記第二のリッジ導波路側に延出する方向にテーパー状である、請求項1〜6のいずれか1項に記載の素子。
- 前記MMI領域は、端面と側壁とを備え、前記側壁間の間隔が前記第二のリッジ導波路側に延出する方向において低減するように前記MMI領域の幅がテーパー状である、請求項1〜7のいずれか1項に記載の素子。
- 前記第一のリッジ導波路の端が前記第二のリッジ導波路の端よりも広い、請求項1〜8のいずれか1項に記載の素子。
- 前記MMI領域は、
前記第一のリッジ導波路の両側に位置すると共に前記第一のリッジ導波路に隣接する端面を備え、
前記第二のリッジ導波路の両側に位置すると共に前記第二のリッジ導波路に隣接する端面を更に備える、請求項1〜9のいずれか1項に記載の素子。 - 前記第一の領域は第一の半導体材料を含み、前記第二の領域は第二の半導体材料を含む、請求項1から10のいずれか1項に記載の素子。
- 前記第二の半導体材料は、前記第一の半導体材料がエッチングで除去された場所に再成長した、請求項11に記載の素子。
- 前記半導体構造の前記表面は、少なくとも二つのレベルを有し、前記表面の前記第一の領域は第一のレベルにあり、前記表面の前記第二の領域は第二のレベルにあり、前記第二のレベルは前記第一のレベルよりも低い、請求項1から12のいずれか1項に記載の素子。
- 前記第一のリッジ導波路の前記リッジの上面と、前記第二のリッジ導波路の前記リッジの上面とは、実質的に同一平面上にある、請求項1から13のいずれか1項に記載の素子。
- 前記MMI領域の上面は、前記第一のリッジ導波路の前記リッジの上面と、前記第二のリッジ導波路の前記リッジの上面とのうちの片方または両方と実質的に同一平面上にある、請求項1から14のいずれか1項に記載の素子。
- (a)前記MMI領域と、(b)前記第一のリッジ導波路と前記第二のリッジ導波路とのうちの片方または両方、のうちの片方または両方と連結する第一の電極をさらに備え、前記電極は、該電極に電場を印加するのに適するように構成され、該電極を通って伝播する光の吸収をもたらす、請求項1から14のいずれか1項に記載の素子。
- 前記半導体構造の前記第一の電極と反対側に位置する第二の電極をさらに備える、請求項16に記載の素子。
- (a)前記MMI領域と、(b)前記第一のリッジ導波路と前記第二のリッジ導波路とのうちの片方または両方、のうちの片方または両方は、印加された電場の変動により光の吸収の変動がもたらされるように構成された一つ以上の能動領域と、印加された電場の変動により光のいかなる吸収の変動も実質的にもたらされないように構成された一つ以上の受動領域とを含む、請求項16又は17に記載の素子。
- 単一および同一の半導体構造に集積される、請求項1から18のいずれか1項に記載の複数の光学素子を備える半導体光学素子。
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US23706705A | 2005-09-27 | 2005-09-27 | |
US11/237,067 | 2005-09-27 | ||
US11/267,400 US20080008416A1 (en) | 2002-02-12 | 2005-11-03 | Opto-electronic device |
US11/267,400 | 2005-11-03 | ||
US11/315,415 | 2005-12-21 | ||
US11/315,415 US7184207B1 (en) | 2005-09-27 | 2005-12-21 | Semiconductor optical device |
PCT/GB2006/003562 WO2007036704A1 (en) | 2005-09-27 | 2006-09-26 | Optical device comprising taper to reduce loss at waveguide steps |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009510505A JP2009510505A (ja) | 2009-03-12 |
JP4800389B2 true JP4800389B2 (ja) | 2011-10-26 |
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Application Number | Title | Priority Date | Filing Date |
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JP2008532857A Active JP4800389B2 (ja) | 2005-09-27 | 2006-09-26 | 光導波路工程で損失を低減するテーパー部を備える光学素子 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7184207B1 (ja) |
EP (1) | EP1929344B1 (ja) |
JP (1) | JP4800389B2 (ja) |
WO (1) | WO2007036704A1 (ja) |
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JP4505470B2 (ja) * | 2005-01-20 | 2010-07-21 | 富士通株式会社 | 光導波路デバイス及び半導体デバイス |
SE531378C8 (sv) | 2007-06-27 | 2009-07-07 | Syntune Ab | Övergångsdel mellan två optiska vägledare |
SE532380C2 (sv) | 2008-09-23 | 2009-12-29 | Syntune Ab | Vågledare för utkoppling med låg reflex. |
JP5120330B2 (ja) * | 2009-04-27 | 2013-01-16 | 三菱電機株式会社 | 半導体光素子とその製造方法 |
JP4444368B1 (ja) * | 2009-07-30 | 2010-03-31 | 古河電気工業株式会社 | 集積型半導体レーザ素子および半導体レーザモジュールならびに光伝送システム |
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JP2011258785A (ja) * | 2010-06-10 | 2011-12-22 | Nippon Telegr & Teleph Corp <Ntt> | 光導波路およびそれを用いた光半導体装置 |
JP5437932B2 (ja) * | 2010-06-29 | 2014-03-12 | 日本電信電話株式会社 | 可変光減衰器 |
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JP2012248812A (ja) * | 2011-05-31 | 2012-12-13 | Sumitomo Electric Ind Ltd | 半導体光集積素子の製造方法 |
US9075192B2 (en) | 2012-09-24 | 2015-07-07 | Finisar Sweden Ab | Optical waveguide splitter |
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JP6369036B2 (ja) * | 2014-02-04 | 2018-08-08 | 日本電気株式会社 | 光導波路及び光導波路の製造方法 |
EP3203282B1 (en) * | 2014-10-02 | 2022-01-26 | Nec Corporation | Rib type optical waveguide and optical multiplexer/demultiplexer using same |
WO2018134940A1 (ja) * | 2017-01-19 | 2018-07-26 | 三菱電機株式会社 | 光変調器集積半導体レーザ |
CN107230927B (zh) * | 2017-06-29 | 2019-05-14 | 中国计量大学 | 基于SMF-SIMF-GIMF-SMF光纤结构的2μm锁模光纤激光器 |
JP7323786B2 (ja) * | 2019-01-17 | 2023-08-09 | 日亜化学工業株式会社 | 半導体レーザ素子 |
US10684414B1 (en) | 2019-01-29 | 2020-06-16 | Ciene Corporation | Interconnect between different multi-quantum well waveguides in a semiconductor photonic integrated circuit |
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- 2006-09-26 JP JP2008532857A patent/JP4800389B2/ja active Active
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EP1929344A1 (en) | 2008-06-11 |
WO2007036704A1 (en) | 2007-04-05 |
JP2009510505A (ja) | 2009-03-12 |
US7184207B1 (en) | 2007-02-27 |
EP1929344B1 (en) | 2014-05-21 |
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